KR20090064365A - 비휘발성 기억소자 및 그 제조방법 - Google Patents
비휘발성 기억소자 및 그 제조방법 Download PDFInfo
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Abstract
Description
Claims (18)
- 기판과,상기 기판상에 형성된 층간절연막과,상기 층간절연막에 덮인 하부전극과 상기 하부전극보다 기판으로부터 먼 쪽에 마련된 상부전극과 상기 상부전극 및 상기 하부전극의 사이에 개재되는 가변저항막을 갖는 저항변화소자와,상기 상부전극보다 기판으로부터 먼 쪽에 상기 상부전극에 직렬로 접속되도록 마련된 제 1 전극과 상기 제 1 전극보다 기판으로부터 먼 쪽에 마련된 제 2 전극과 상기 제 1 전극 및 상기 제 2 전극의 사이에 개재되는 절연층 또는 반도체층을 갖는 다이오드를 구비하는 비휘발성 기억소자로서,상기 층간절연막에는 상기 층간절연막을 상기 기판의 주면에 대하여 대략 수직방향으로 관통하여 상기 하부전극에 도달하도록 콘택트홀이 형성되고,상기 가변저항막이 상기 콘택트홀에 실장되고,상기 절연층 또는 상기 반도체층이 상기 제 1 전극과 접촉하는 부분의 면적을 제 1 면적, 상기 가변저항막이 상기 상부전극과 접촉하는 부분의 면적을 제 2 면적, 상기 가변저항막이 상기 하부전극과 접촉하는 부분의 면적을 제 3 면적이라고 할 때,상기 제 1 면적이, 상기 제 2 면적 및 상기 제 3 면적 중 적어도 한쪽보다 큰비휘발성 기억소자.
- 제 1 항에 있어서,상기 제 1 면적이 상기 제 2 면적보다 큰 비휘발성 기억소자.
- 제 1 항에 있어서,상기 제 1 면적이 상기 제 3 면적보다 큰 비휘발성 기억소자.
- 제 1 항에 있어서,상기 제 2 면적이 상기 제 3 면적보다 큰 비휘발성 기억소자.
- 제 1 항에 있어서,상기 가변저항막은, 상기 하부전극을 향하여 테이퍼형상으로 가늘어지도록 구성되어 있는 비휘발성 기억소자.
- 제 1 항에 있어서,상기 콘택트홀이 상기 하부전극을 향하여 테이퍼형상으로 가늘어지도록 형성되어 있는 비휘발성 기억소자.
- 제 1 항에 있어서,상기 상부전극의 적어도 일부가 상기 콘택트홀에 실장되어 있는 비휘발성 기억소자.
- 제 1 항에 있어서,상기 상부전극과 상기 제 1 전극이 상기 콘택트홀에 실장되어 있는 비휘발성 기억소자.
- 제 1 항에 있어서,상기 상부전극과 상기 제 1 전극은 1개의 공통전극인 비휘발성 기억소자.
- 제 8 항에 있어서,상기 공통전극은, 상기 가변저항막을 향하여 테이퍼형상으로 가늘어지도록 구성되어 있는 비휘발성 기억소자.
- 제 1 항에 있어서,상기 다이오드는, MIM다이오드, MSM다이오드 또는 쇼트키다이오드인 비휘발성 기억소자.
- 제 5 항에 있어서,상기 상부전극의 일부가 상기 가변저항막의 중앙부에 볼록형상으로 실장되어 있는 비휘발성 기억소자.
- 제 1 항에 있어서,상기 절연층 또는 반도체층이 상기 제 1 전극과 접촉하는 면을 제 1 접촉면이라고 할 때,상기 제 1 접촉면이, 요면, 철면 또는 요철면인 비휘발성 기억소자.
- 제 1 항에 있어서,상기 가변저항막이 상기 상부전극과 접촉하는 면을 제 2 접촉면이라고 할 때,상기 제 2 접촉면이, 요면, 철면 또는 요철면인 비휘발성 기억소자.
- 청구항 1에 기재된 비휘발성 기억소자를 복수 구비한 비휘발성 기억소자어레이로서,상기 하부전극이 상기 기판의 주면에 평행한 제 1 평면 내에서 서로 평행하게 연장하도록 복수 형성되고,상기 제 2 전극이 상기 제 1 평면에 평행한 제 2 평면 내에서 서로 평행하게 연장하도록, 또한 상기 복수의 하부전극과 입체교차하도록 복수 형성되고,상기 복수의 하부전극 및 상기 복수의 제 2 전극의 입체교차점의 각각에 대응하여 하부전극 및 제 2 전극의 사이에 개재되도록 가변저항막이 마련됨으로써,상기 입체교차점의 각각에 대응하여 청구항 1에 기재된 비휘발성 기억소자가 형성되어 있는비휘발성 기억소자어레이.
- 기판상에 하부전극을 형성하는 하부전극 형성공정과,상기 하부전극상에 가변저항막을 형성하는 저항막 형성공정과,상기 가변저항막상에 상부전극을 형성하는 상부전극 형성공정과,상기 상부전극상에 제 1 전극을 형성하는 제 1 전극 형성공정과,상기 제 1 전극상에 절연층 또는 반도체층을 형성하는 절연층 또는 반도체층 형성공정과,상기 절연층 또는 반도체층상에 제 2 전극을 형성하는 제 2 전극 형성공정을 구비하되,상기 저항막 형성공정은, 상기 하부전극을 덮는 층간절연막을 형성하는 공정과, 상기 층간절연막을 관통하는 콘택트홀을 상기 하부전극상에 형성하는 홀 형성공정과, 상기 콘택트홀에 상기 가변저항막을 실장하는 실장공정을 갖고,상기 절연층 또는 상기 반도체층이 상기 전극과 접촉하는 부분의 면적을 제 1 면적, 상기 가변저항막이 상기 상부전극과 접촉하는 부분의 면적을 제 2 면적, 상기 가변저항막이 상기 하부전극과 접촉하는 부분의 면적을 제 3 면적이라고 할 때, 상기 제 1 면적이, 상기 제 2 면적 및 상기 제 3 면적 중 적어도 한쪽보다 큰비휘발성 기억소자의 제조방법.
- 청구항 16에 기재된 비휘발성 기억소자의 제조방법을 이용한 크로스포인트형 의 비휘발성 기억소자어레이의 제조방법으로서,상기 하부전극 형성공정은, 복수의 하부전극을 상기 기판의 주면에 평행한 제 1 평면 내에서 서로 평행하게 연장하도록 형성하는 공정이며,상기 제 2 전극 형성공정은, 상기 제 1 평면에 평행한 제 2 평면 내에서 서로 평행하게 연장하도록, 또한 상기 복수의 하부전극과 입체교차하도록 형성하는 공정인비휘발성 기억소자어레이의 제조방법.
- 제 16 항에 있어서,상기 홀 형성공정은, 상기 콘택트홀을 상기 하부전극을 향하여 테이퍼형상으로 가늘어지도록 형성하는 것인 비휘발성 기억소자의 제조방법.
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JPJP-P-2006-281081 | 2006-10-16 | ||
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PCT/JP2007/068392 WO2008047530A1 (en) | 2006-10-16 | 2007-09-21 | Non-volatile storage device and method for manufacturing the same |
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KR20090064365A true KR20090064365A (ko) | 2009-06-18 |
KR101046852B1 KR101046852B1 (ko) | 2011-07-06 |
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KR20090026580A (ko) * | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 저항 메모리 소자 및 그 형성방법 |
JP5159270B2 (ja) * | 2007-11-22 | 2013-03-06 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP2011151049A (ja) * | 2008-05-16 | 2011-08-04 | Panasonic Corp | 不揮発性半導体記憶装置およびその製造方法 |
KR101009334B1 (ko) * | 2008-07-24 | 2011-01-19 | 주식회사 하이닉스반도체 | 저항성 메모리 소자 및 그 제조 방법 |
WO2010058569A1 (ja) * | 2008-11-19 | 2010-05-27 | パナソニック株式会社 | 不揮発性記憶素子および不揮発性記憶装置 |
JPWO2010086916A1 (ja) * | 2009-01-29 | 2012-07-26 | パナソニック株式会社 | 抵抗変化素子およびその製造方法 |
JP2010225741A (ja) | 2009-03-23 | 2010-10-07 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP4756079B2 (ja) * | 2009-03-25 | 2011-08-24 | 株式会社東芝 | 不揮発性記憶装置及びその製造方法 |
JP4810581B2 (ja) | 2009-03-25 | 2011-11-09 | 株式会社東芝 | 不揮発性記憶装置 |
JP4778117B2 (ja) * | 2009-05-28 | 2011-09-21 | パナソニック株式会社 | メモリセルアレイ、メモリセルアレイの製造方法、不揮発性記憶装置、および、クロスポイント型のメモリセルアレイを構成するメモリセル |
WO2011024455A1 (ja) * | 2009-08-28 | 2011-03-03 | パナソニック株式会社 | 半導体記憶装置及びその製造方法 |
WO2011030559A1 (ja) * | 2009-09-14 | 2011-03-17 | パナソニック株式会社 | 不揮発性記憶装置及びその製造方法 |
US8470635B2 (en) | 2009-11-30 | 2013-06-25 | Micron Technology, Inc. | Keyhole-free sloped heater for phase change memory |
WO2011074243A1 (ja) * | 2009-12-18 | 2011-06-23 | パナソニック株式会社 | 抵抗変化型素子及びその製造方法 |
JP2011146632A (ja) * | 2010-01-18 | 2011-07-28 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
US9601692B1 (en) | 2010-07-13 | 2017-03-21 | Crossbar, Inc. | Hetero-switching layer in a RRAM device and method |
US9570678B1 (en) | 2010-06-08 | 2017-02-14 | Crossbar, Inc. | Resistive RAM with preferental filament formation region and methods |
WO2011158821A1 (ja) | 2010-06-16 | 2011-12-22 | 日本電気株式会社 | 半導体装置、および半導体装置の製造方法 |
JP5232935B2 (ja) * | 2010-06-21 | 2013-07-10 | パナソニック株式会社 | 抵抗変化素子の製造方法 |
US8884261B2 (en) | 2010-08-23 | 2014-11-11 | Crossbar, Inc. | Device switching using layered device structure |
US8569172B1 (en) | 2012-08-14 | 2013-10-29 | Crossbar, Inc. | Noble metal/non-noble metal electrode for RRAM applications |
USRE46335E1 (en) | 2010-11-04 | 2017-03-07 | Crossbar, Inc. | Switching device having a non-linear element |
US8502185B2 (en) | 2011-05-31 | 2013-08-06 | Crossbar, Inc. | Switching device having a non-linear element |
JP5295465B2 (ja) * | 2011-02-23 | 2013-09-18 | パナソニック株式会社 | 不揮発性記憶素子及びその製造方法 |
US9620206B2 (en) | 2011-05-31 | 2017-04-11 | Crossbar, Inc. | Memory array architecture with two-terminal memory cells |
US8619459B1 (en) | 2011-06-23 | 2013-12-31 | Crossbar, Inc. | High operating speed resistive random access memory |
US8946669B1 (en) | 2012-04-05 | 2015-02-03 | Crossbar, Inc. | Resistive memory device and fabrication methods |
US9627443B2 (en) | 2011-06-30 | 2017-04-18 | Crossbar, Inc. | Three-dimensional oblique two-terminal memory with enhanced electric field |
US9166163B2 (en) | 2011-06-30 | 2015-10-20 | Crossbar, Inc. | Sub-oxide interface layer for two-terminal memory |
US9564587B1 (en) | 2011-06-30 | 2017-02-07 | Crossbar, Inc. | Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects |
US10056907B1 (en) | 2011-07-29 | 2018-08-21 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
US9729155B2 (en) | 2011-07-29 | 2017-08-08 | Crossbar, Inc. | Field programmable gate array utilizing two-terminal non-volatile memory |
JP5279879B2 (ja) * | 2011-08-09 | 2013-09-04 | 株式会社東芝 | 不揮発性半導体記憶装置 |
WO2013094169A1 (ja) | 2011-12-19 | 2013-06-27 | パナソニック株式会社 | 不揮発性記憶装置及びその製造方法 |
WO2013145736A1 (ja) | 2012-03-29 | 2013-10-03 | パナソニック株式会社 | 不揮発性記憶装置 |
US9685608B2 (en) | 2012-04-13 | 2017-06-20 | Crossbar, Inc. | Reduced diffusion in metal electrode for two-terminal memory |
US8658476B1 (en) | 2012-04-20 | 2014-02-25 | Crossbar, Inc. | Low temperature P+ polycrystalline silicon material for non-volatile memory device |
US8691622B2 (en) * | 2012-05-25 | 2014-04-08 | Micron Technology, Inc. | Memory cells and methods of forming memory cells |
US9741765B1 (en) | 2012-08-14 | 2017-08-22 | Crossbar, Inc. | Monolithically integrated resistive memory using integrated-circuit foundry compatible processes |
US9583701B1 (en) | 2012-08-14 | 2017-02-28 | Crossbar, Inc. | Methods for fabricating resistive memory device switching material using ion implantation |
CN102891253B (zh) * | 2012-09-25 | 2016-03-02 | 北京大学 | 阻变存储器及其制备方法 |
US9576616B2 (en) | 2012-10-10 | 2017-02-21 | Crossbar, Inc. | Non-volatile memory with overwrite capability and low write amplification |
US9728584B2 (en) * | 2013-06-11 | 2017-08-08 | Micron Technology, Inc. | Three dimensional memory array with select device |
KR20140148069A (ko) * | 2013-06-21 | 2014-12-31 | 에스케이하이닉스 주식회사 | 상변화 메모리 장치 및 그의 제조방법 |
US9257431B2 (en) * | 2013-09-25 | 2016-02-09 | Micron Technology, Inc. | Memory cell with independently-sized electrode |
KR102079620B1 (ko) * | 2013-11-12 | 2020-02-21 | 에스케이하이닉스 주식회사 | 전자 장치 |
US10290801B2 (en) | 2014-02-07 | 2019-05-14 | Crossbar, Inc. | Scalable silicon based resistive memory device |
US9425237B2 (en) | 2014-03-11 | 2016-08-23 | Crossbar, Inc. | Selector device for two-terminal memory |
US9768234B2 (en) | 2014-05-20 | 2017-09-19 | Crossbar, Inc. | Resistive memory architecture and devices |
US10211397B1 (en) | 2014-07-07 | 2019-02-19 | Crossbar, Inc. | Threshold voltage tuning for a volatile selection device |
US9633724B2 (en) | 2014-07-07 | 2017-04-25 | Crossbar, Inc. | Sensing a non-volatile memory device utilizing selector device holding characteristics |
US9685483B2 (en) | 2014-07-09 | 2017-06-20 | Crossbar, Inc. | Selector-based non-volatile cell fabrication utilizing IC-foundry compatible process |
US9460788B2 (en) | 2014-07-09 | 2016-10-04 | Crossbar, Inc. | Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor |
US9698201B2 (en) | 2014-07-09 | 2017-07-04 | Crossbar, Inc. | High density selector-based non volatile memory cell and fabrication |
US10115819B2 (en) | 2015-05-29 | 2018-10-30 | Crossbar, Inc. | Recessed high voltage metal oxide semiconductor transistor for RRAM cell |
US20170133588A1 (en) * | 2015-11-06 | 2017-05-11 | HGST Netherlands B.V. | Resistive ram cell with focused electric field |
US9859336B1 (en) * | 2017-01-09 | 2018-01-02 | Macronix International Co., Ltd. | Semiconductor device including a memory cell structure |
US10096362B1 (en) | 2017-03-24 | 2018-10-09 | Crossbar, Inc. | Switching block configuration bit comprising a non-volatile memory cell |
US10497436B2 (en) | 2017-11-27 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory device and fabrication thereof |
CN108630810B (zh) * | 2018-05-14 | 2022-07-19 | 中国科学院微电子研究所 | 1s1r存储器集成结构及其制备方法 |
US20200152871A1 (en) * | 2018-11-13 | 2020-05-14 | International Business Machines Corporation | Multi function single via patterning |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4903087A (en) * | 1987-01-13 | 1990-02-20 | National Semiconductor Corporation | Schottky barrier diode for alpha particle resistant static random access memories |
US7118988B2 (en) * | 1994-08-15 | 2006-10-10 | Buerger Jr Walter Richard | Vertically wired integrated circuit and method of fabrication |
US5831276A (en) * | 1995-06-07 | 1998-11-03 | Micron Technology, Inc. | Three-dimensional container diode for use with multi-state material in a non-volatile memory cell |
US6015977A (en) * | 1997-01-28 | 2000-01-18 | Micron Technology, Inc. | Integrated circuit memory cell having a small active area and method of forming same |
JP4491870B2 (ja) * | 1999-10-27 | 2010-06-30 | ソニー株式会社 | 不揮発性メモリの駆動方法 |
US6800563B2 (en) * | 2001-10-11 | 2004-10-05 | Ovonyx, Inc. | Forming tapered lower electrode phase-change memories |
TWI281748B (en) * | 2001-12-18 | 2007-05-21 | Matsushita Electric Ind Co Ltd | Non-volatile memory |
US7151273B2 (en) * | 2002-02-20 | 2006-12-19 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US6849868B2 (en) * | 2002-03-14 | 2005-02-01 | Micron Technology, Inc. | Methods and apparatus for resistance variable material cells |
US6967350B2 (en) | 2002-04-02 | 2005-11-22 | Hewlett-Packard Development Company, L.P. | Memory structures |
CN1759450B (zh) * | 2003-03-18 | 2012-02-29 | 株式会社东芝 | 可编程阻抗存储器器件 |
JP2004319587A (ja) | 2003-04-11 | 2004-11-11 | Sharp Corp | メモリセル、メモリ装置及びメモリセル製造方法 |
US6927074B2 (en) | 2003-05-21 | 2005-08-09 | Sharp Laboratories Of America, Inc. | Asymmetric memory cell |
WO2005041303A1 (ja) * | 2003-10-23 | 2005-05-06 | Matsushita Electric Industrial Co., Ltd. | 抵抗変化素子、その製造方法、その素子を含むメモリ、およびそのメモリの駆動方法 |
US6949435B2 (en) | 2003-12-08 | 2005-09-27 | Sharp Laboratories Of America, Inc. | Asymmetric-area memory cell |
KR100657911B1 (ko) * | 2004-11-10 | 2006-12-14 | 삼성전자주식회사 | 한 개의 저항체와 한 개의 다이오드를 지닌 비휘발성메모리 소자 |
US7214958B2 (en) * | 2005-02-10 | 2007-05-08 | Infineon Technologies Ag | Phase change memory cell with high read margin at low power operation |
US7488967B2 (en) * | 2005-04-06 | 2009-02-10 | International Business Machines Corporation | Structure for confining the switching current in phase memory (PCM) cells |
US7488968B2 (en) * | 2005-05-05 | 2009-02-10 | Ovonyx, Inc. | Multilevel phase change memory |
US7309630B2 (en) * | 2005-07-08 | 2007-12-18 | Nanochip, Inc. | Method for forming patterned media for a high density data storage device |
US7615770B2 (en) * | 2005-10-27 | 2009-11-10 | Infineon Technologies Ag | Integrated circuit having an insulated memory |
JP4017650B2 (ja) * | 2005-12-02 | 2007-12-05 | シャープ株式会社 | 可変抵抗素子及びその製造方法 |
US7515455B2 (en) * | 2006-03-17 | 2009-04-07 | Qimonda North America Corp. | High density memory array for low power application |
US7884346B2 (en) * | 2006-03-30 | 2011-02-08 | Panasonic Corporation | Nonvolatile memory element and manufacturing method thereof |
US7704788B2 (en) * | 2007-04-06 | 2010-04-27 | Samsung Electronics Co., Ltd. | Methods of fabricating multi-bit phase-change memory devices and devices formed thereby |
JP2009130139A (ja) * | 2007-11-22 | 2009-06-11 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
US7906392B2 (en) * | 2008-01-15 | 2011-03-15 | Sandisk 3D Llc | Pillar devices and methods of making thereof |
KR20090080751A (ko) * | 2008-01-22 | 2009-07-27 | 삼성전자주식회사 | 저항성 메모리 소자 및 그 제조방법 |
KR20090081153A (ko) * | 2008-01-23 | 2009-07-28 | 삼성전자주식회사 | 저항성 메모리 소자 및 그 제조방법 |
JP5422231B2 (ja) * | 2008-08-13 | 2014-02-19 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
US8153488B2 (en) * | 2009-03-24 | 2012-04-10 | Kabushiki Kaisha Toshiba | Method for manufacturing nonvolatile storage device |
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