KR20080082827A - 박막트랜지스터와 그 제조 방법 및 이를 구비한유기전계발광표시장치 - Google Patents
박막트랜지스터와 그 제조 방법 및 이를 구비한유기전계발광표시장치 Download PDFInfo
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
Description
Claims (30)
- 기판;상기 기판 상에 위치하고, 채널 영역 및 소오스/드레인 영역, 상기 채널 영역 및 소오스/드레인 영역에 형성된 제 1 불순물을 포함하는 에지 영역을 포함하는 반도체층;상기 반도체층을 절연시키는 게이트 절연막;상기 게이트 절연막에 의해 상기 반도체층과 절연된 게이트 전극; 및상기 반도체층과 전기적으로 연결된 소오스/드레인 전극을 포함하는 것을 특징으로 하는 박막트랜지스터.
- 제 1항에 있어서,상기 제 1 불순물은 인(P)인 것을 특징으로 하는 박막트랜지스터.
- 제 1항에 있어서,상기 에지 영역은 반도체층의 채널 영역과 소오스/드레인 영역의 모두에 형성되어 있는 것을 특징으로 하는 박막트랜지스터.
- 제 1항에 있어서,상기 에지 영역은 소오스/드레인 영역에만 형성되어 있는 것을 특징으로 하 는 박막트랜지스터.
- 제 1항에 있어서,상기 소오스/드레인 영역 및 에지 영역을 노출시키는 콘택홀을 통해 배선부가 형성되어 있는 것을 특징으로 하는 박막트랜지스터.
- 제 5항에 있어서,상기 배선부는 소오스/드레인 전극인 것을 특징으로 하는 박막트랜지스터.
- 제 1항에 있어서,상기 반도체층은 금속 촉매가 포함되어 있는 것을 특징으로 하는 박막트랜지스터.
- 제 7항에 있어서,상기 금속 촉매는 Ni, Pd, Ti, Ag, Au, Al, Sn, Sb, Cu, Co, Mo, Tr, Ru, Rh, Cd 및 Pt 중 어느 하나 이상의 물질인 것을 특징으로 하는 박막트랜지스터.
- 제 1항에 있어서,상기 제 1 불순물은 1*e11/cm3 내지 3*e15/cm3의 도즈 양으로 주입되어 있는 것을 특징으로 하는 박막트랜지스터.
- 제 7항에 있어서,상기 반도체층의 채널 영역에 포함된 금속 촉매는 1*e16/ cm2 미만인 것을 특징으로 하는 박막트랜지스터.
- 기판을 준비하고,상기 기판상에 비정질 실리콘층을 형성하며,상기 비정질 실리콘층을 금속 촉매를 이용하여 다결정 실리콘층으로 결정화하고,상기 다결정 실리콘층을 패터닝하여 반도체층을 형성하며,상기 반도체층 상에 게이트 절연막을 형성하고,상기 게이트 절연막이 형성된 기판상에 반도체층의 에지 영역을 노출시키는 포토레지스트 패턴을 형성하여 상기 에지 영역에 제 1 불순물을 주입하며,상기 포토레지스트 패턴을 제거한 후 게이트 전극을 형성하고,상기 게이트 전극을 마스크로 하여 상기 반도체층에 제 2 불순물을 주입하여 소오스/드레인 영역 및 채널 영역을 형성하며,상기 게이트 전극 상에 층간 절연막을 형성하고,상기 기판을 열처리하여 상기 반도체층의 채널 영역 상에 잔류하는 금속 촉 매를 제거하며,상기 층간 절연막 및 게이트 절연막을 식각하여 상기 반도체층의 일부 영역을 노출시키는 콘택홀을 형성하고,상기 콘택홀을 포함한 층간 절연막의 일부에 상기 반도체층의 일부 영역과 전기적으로 연결되는 소오스/드레인 전극을 형성하는 것을 포함하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 11항에 있어서,상기 비정질 실리콘층을 다결정 실리콘층으로 결정화하는 것은 MIC 법, MILC 법 및 SGS 결정화법으로 이루어진 군에서 선택되는 어느 하나를 이용하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 12항에 있어서,상기 SGS 결정화법은 비정질 실리콘층상에 캡핑층을 형성하고, 상기 캡핑층 상에 금속 촉매층을 형성한 후 열처리하여 다결정 실리콘층으로 형성하는 것임을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 13항에 있어서,상기 열처리 이후에 캡핑층을 제거하는 것을 더 포함하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 11항에 있어서,상기 금속 촉매는 Ni, Pd, Ti, Ag, Au, Al, Sn, Sb, Cu, Co, Mo, Tr, Ru, Rh, Cd 및 Pt 중 어느 하나 이상의 물질인 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 11항에 있어서,상기 제 1 불순물은 인(P)인 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 11항에 있어서,상기 제 1 불순물은 1*e11/cm3 내지 3*e15/cm3의 도즈 양으로 주입하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 11항에 있어서,상기 제 2 불순물은 붕소(B), 알루미늄(Al), 갈륨(Ga) 및 인듐(In)으로 이루어진 군에서 선택되는 어느 하나인 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 11항에 있어서,상기 소오스/드레인 전극은 상기 소오스/드레인 영역 및 에지 영역을 노출시키는 콘택홀을 통해 소오스/드레인 영역 및 에지 영역과 동시에 접촉하도록 형성되는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 11항에 있어서,상기 게이트 절연막이 형성된 기판상에 게이트 전극을 형성하고,상기 게이트 전극을 마스크로 하여 상기 반도체층에 제1 및 제 2 불순물을 주입하여 소오스/드레인 영역 및 채널 영역을 형성하며,상기 기판을 열처리하여 상기 반도체층의 채널 영역 상에 잔류하는 금속 촉매를 제거하는 것을 더 포함하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 기판;상기 기판 상에 위치하고, 채널 영역 및 소오스/드레인 영역, 상기 채널 영역 및 소오스/드레인 영역에 형성된 제 1 불순물을 포함하는 에지 영역을 포함하는 반도체층;상기 반도체층을 절연시키는 게이트 절연막;상기 게이트 절연막에 의해 상기 반도체층과 절연된 게이트 전극;상기 반도체층과 전기적으로 연결된 소오스/드레인 전극;상기 소오스/드레인 전극에 전기적으로 연결된 제 1전극;상기 제 1전극 상에 위치하는 유기막층 및 제 2전극을 포함하는 것을 특징으 로 하는 유기전계발광표시장치.
- 제 21항에 있어서,상기 제 1 불순물은 인(P)인 것을 특징으로 하는 유기전계발광표시장치.
- 제 21항에 있어서,상기 에지 영역은 반도체층의 채널 영역과 소오스/드레인 영역의 모두에 형성되어 있는 것을 특징으로 하는 유기전계발광표시장치.
- 제 21항에 있어서,상기 에지 영역은 소오스/드레인 영역에만 형성되어 있는 것을 특징으로 하는 유기전계발광표시장치.
- 제 21항에 있어서,상기 소오스/드레인 영역 및 에지 영역을 노출시키는 콘택홀을 통해 배선부가 형성되어 있는 것을 특징으로 하는 유기전계발광표시장치.
- 제 25항에 있어서,상기 배선부는 소오스/드레인 전극인 것을 특징으로 하는 유기전계발광표시장치.
- 제 21항에 있어서,상기 반도체층은 금속 촉매가 포함되어 있는 것을 특징으로 하는 유기전계발광표시장치.
- 제 27항에 있어서,상기 금속 촉매는 Ni, Pd, Ti, Ag, Au, Al, Sn, Sb, Cu, Co, Mo, Tr, Ru, Rh, Cd 및 Pt 중 어느 하나 이상의 물질인 것을 특징으로 하는 유기전계발광표시장치.
- 제 21항에 있어서,상기 제 1 불순물은 1*e11/cm3 내지 3*e15/cm3의 도즈 양으로 주입되어 있는 것을 특징으로 하는 유기전계발광표시장치.
- 제 27항에 있어서,상기 반도체층의 채널 영역에 포함된 금속 촉매는 1*e16/ cm2 미만인 것을 특징으로 하는 유기전계발광표시장치.
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US20110014756A1 (en) | 2011-01-20 |
US8530290B2 (en) | 2013-09-10 |
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