KR20060044663A - 초박 칩의 제조 프로세스 및 제조장치 - Google Patents
초박 칩의 제조 프로세스 및 제조장치 Download PDFInfo
- Publication number
- KR20060044663A KR20060044663A KR1020050024385A KR20050024385A KR20060044663A KR 20060044663 A KR20060044663 A KR 20060044663A KR 1020050024385 A KR1020050024385 A KR 1020050024385A KR 20050024385 A KR20050024385 A KR 20050024385A KR 20060044663 A KR20060044663 A KR 20060044663A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- dicing
- tape
- surface protection
- semiconductor wafer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000003860 storage Methods 0.000 abstract description 8
- 230000006378 damage Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 170
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 11
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 5
- 206010028980 Neoplasm Diseases 0.000 description 4
- 201000011510 cancer Diseases 0.000 description 4
- 238000000465 moulding Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008521 reorganization Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004086330A JP2005276987A (ja) | 2004-03-24 | 2004-03-24 | 極薄チップの製造プロセス及び製造装置 |
JPJP-P-2004-00086330 | 2004-03-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20060044663A true KR20060044663A (ko) | 2006-05-16 |
Family
ID=35062409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050024385A KR20060044663A (ko) | 2004-03-24 | 2005-03-24 | 초박 칩의 제조 프로세스 및 제조장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2005276987A (de) |
KR (1) | KR20060044663A (de) |
DE (1) | DE102005013545A1 (de) |
TW (1) | TW200601443A (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007214417A (ja) * | 2006-02-10 | 2007-08-23 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP5032152B2 (ja) * | 2007-02-27 | 2012-09-26 | リンテック株式会社 | 接着剤除去装置及び接着剤除去方法 |
JP5137435B2 (ja) * | 2007-03-28 | 2013-02-06 | 古河電気工業株式会社 | 半導体ウェハのチップ化処理方法 |
JP2014229702A (ja) * | 2013-05-21 | 2014-12-08 | 株式会社ディスコ | レーザー加工装置 |
DE112018007519T5 (de) * | 2018-04-24 | 2021-01-14 | Disco Hi-Tec Europe Gmbh | Vorrichtung und Verfahren zum Aufbringen eines Schutzbandes auf einem Halbleiterwafer |
JP2019197869A (ja) * | 2018-05-11 | 2019-11-14 | 株式会社ディスコ | Daf貼着装置 |
CN112975148B (zh) * | 2021-02-07 | 2022-12-13 | 苏州镭明激光科技有限公司 | 一种晶圆激光隐形切割设备和切割方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04356942A (ja) * | 1991-03-28 | 1992-12-10 | Toshiba Corp | 半導体集積回路装置の製造方法 |
JPH10189496A (ja) * | 1996-12-24 | 1998-07-21 | Toshiba Corp | ウェーハ切断方法およびその装置 |
JP2001057357A (ja) * | 1999-08-19 | 2001-02-27 | Tokyo Seimitsu Co Ltd | エッチング装置 |
JP2004001076A (ja) * | 2002-03-12 | 2004-01-08 | Hamamatsu Photonics Kk | レーザ加工方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62274742A (ja) * | 1986-05-23 | 1987-11-28 | Mitsubishi Electric Corp | ウエハ用シ−ト貼り機 |
JPH08181197A (ja) * | 1994-12-27 | 1996-07-12 | Hitachi Ltd | 半導体装置の製造方法およびそれに用いるウエハマウンタ |
JP2002141309A (ja) * | 2000-11-02 | 2002-05-17 | Lintec Corp | ダイシングシートおよびその使用方法 |
-
2004
- 2004-03-24 JP JP2004086330A patent/JP2005276987A/ja active Pending
-
2005
- 2005-03-23 TW TW094108976A patent/TW200601443A/zh unknown
- 2005-03-23 DE DE102005013545A patent/DE102005013545A1/de not_active Withdrawn
- 2005-03-24 KR KR1020050024385A patent/KR20060044663A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04356942A (ja) * | 1991-03-28 | 1992-12-10 | Toshiba Corp | 半導体集積回路装置の製造方法 |
JPH10189496A (ja) * | 1996-12-24 | 1998-07-21 | Toshiba Corp | ウェーハ切断方法およびその装置 |
JP2001057357A (ja) * | 1999-08-19 | 2001-02-27 | Tokyo Seimitsu Co Ltd | エッチング装置 |
JP2004001076A (ja) * | 2002-03-12 | 2004-01-08 | Hamamatsu Photonics Kk | レーザ加工方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200601443A (en) | 2006-01-01 |
DE102005013545A1 (de) | 2005-10-27 |
JP2005276987A (ja) | 2005-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |