KR20050024384A - 열계면재료, 및 이의 제조방법 및 용도 - Google Patents
열계면재료, 및 이의 제조방법 및 용도 Download PDFInfo
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- KR20050024384A KR20050024384A KR10-2004-7021068A KR20047021068A KR20050024384A KR 20050024384 A KR20050024384 A KR 20050024384A KR 20047021068 A KR20047021068 A KR 20047021068A KR 20050024384 A KR20050024384 A KR 20050024384A
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Abstract
Description
접합면 두께(㎛) | 열 간섭(cm2K/W) |
23 | 0.04 |
23 | 0.06 |
31 | 0.13 |
102 | 0.93 |
145 | 1.52 |
85℃/85% RH에서의 시효경화(일) | 충전제를 갖는 TIM에서의 열 간섭(cm2K/W) | |||
In51Bi32.5Sn16.5(mp 61℃) | In26Bi57Sn17(mp 80℃) | In12Bi52Sn36(mp 60 - 138℃) | Sn42Bi58(mp 138℃) | |
0 | 0.080% | 0.120% | 0.120% | 0.140% |
4 | 0.1145% | 0.32167% | 0.120% | 0.13-5% |
7 | 0.17113% | 0.82573% | 0.138% | 0.143% |
21 | 1.081280% | 1.01730% | 0.1628% | 0.13-1% |
35 | 1.221456% | 1.16856% | 0.1629% | 0.157% |
85℃/85% RH에서의 시효경화 | 매트릭스를 갖는 TIM에서의 열 간섭(cm2K/W) | ||
매트릭스 1 | 매트릭스 2 | 매트릭스 3 | |
0 | 0.08 0% | 0.08 0% | 0.15 22% |
4 | 0.11 45% | 0.11 42% | 0.21 70% |
7 | 0.17 113% | 0.15 90% | 0.23 82% |
21 | 1.08 1280% | 0.28 251% | 0.53 407% |
35 | 1.22 1456% | 0.80 882% | 1.36 993% |
샘플 | 접합면 두께(㎛) | 충전제 치수(㎛) | 열 간섭(cm2K/W) |
어셈블리 A | 30 | 25-38 | 0.22 |
어셈블리 B | 30 | 38-45 | 0.18 |
어셈블리 C | 30 | 45-53 | 0.11 |
어셈블리 D | 30 | 53-63 | 0.18 |
어셈블리 E | 30 | 63-73 | 0.15 |
비교 어셈블리 A | 50 | 25-38 | 0.80 |
비교 어셈블리 B | 50 | 38-45 | 0.81 |
어셈블리 F | 50 | 45-53 | 0.49 |
어셈블리 G | 50 | 53-63 | 0.34 |
어셈블리 H | 50 | 63-73 | 0.35 |
비교 어셈블리 C | 70 | 25-38 | 10.8 |
비교 어셈블리 D | 70 | 38-45 | 0.82 |
비교 어셈블리 E | 70 | 45-53 | 1.07 |
비교 어셈블리 F | 70 | 53-63 | 1.12 |
비교 어셈블리 G | 70 | 63-73 | 1.20 |
경화점(℃) | 접합면 두께(㎛) | 열 간섭(cm2K/W) |
145 | 27 | 0.04 |
115 | 26 | 0.06 |
94 | 34 | 0.16 |
Claims (11)
- 경화점을 갖는 경화성 매트릭스(A), 연화점을 갖는 저융점 금속 충전제(B) 및 스페이서(C)를 포함하는 조성물로서,(i) 성분(B)의 연화점이 성분(A)의 경화점보다 낮으며,(ii) 성분(B)의 평균 입자 크기가 성분(C)의 평균 입자 크기보다 큼을 특징으로 하는 조성물.
- 제1항에 있어서, 성분(A)가, 부가 반응 경화성 매트릭스, 축합 반응 경화성 매트릭스, 과산화 반응 경화성 매트릭스 또는 이들의 배합물을 포함하는 폴리실록산을 포함하는 조성물.
- 제1항에 있어서, 성분(A)가, 경화성 실리콘계 중합체(I), 성분(I)용 경화제(II), 촉매(III) 및, 임의로, 촉매 억제제(IV)를 포함하는 조성물.
- 제1항에 있어서, 성분(B)의 융점이 50℃ 이상 250℃ 이하인 조성물.
- 제1항에 있어서, 성분(B)가 비공융 합금을 포함하는 조성물.
- 제1항에 있어서, 성분(B)가 Bi, In, Sn 또는 이들의 합금을 포함하는 조성물.
- 제1항에 있어서, 전도성 충전제(D), 성분(D)용 처리제(E), 접착 촉진제(F), 비히클(G), 계면활성제(H), 융제(I), 산 수용체(J) 또는 이들의 배합물을 추가로 포함하는 조성물.
- (1) 경화점을 갖는 경화성 매트릭스(A)와 연화점을 갖는 저융점 금속 충전제(B)를 포함하는 조성물[여기서, (i) 성분(B)의 연화점은 성분(A)의 경화점보다 낮으며, (ii) 성분(B)의 평균 입자 크기는 접합면 두께 이상이다]을 제1 기판과 제2 기판 사이에 주입하여 소정의 두께를 갖는 접합면을 형성하고,(2) 당해 조성물을 성분(B)의 연화점 이상 성분(A)의 경화점 미만의 온도로 가열하며,(3) 당해 조성물을 성분(A)의 경화점 이상의 온도로 가열함을 포함함을 특징으로 하는 방법.
- 제8항에 있어서, 조성물이 스페이서(C), 전도성 충전제(D), 성분(D)용 처리제(E), 접착 촉진제(F), 비히클(G), 계면활성제(H), 융제(I), 산 수용체(J) 또는 이들의 배합물을 추가로 포함하는 방법.
- 제7항 또는 제8항에 있어서, (a) 제1 기판이 열 공급원을 포함하고, (b) 제2 기판이 열 확산기를 포함하는 방법.
- 열 확산기(a)와 열 확산기 표면에 계면재료(b)를 포함하는 장치로서, 계면재료와 열 확산기가 전자 부품과 방열판 사이에 열 전도성 경로 부분을 포함하도록 배열되어 있고, 계면재료가 제1항 내지 제7항 중의 어느 한 항에 따르는 조성물의 경화 생성물을 포함하는 장치.
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US10/183,789 | 2002-06-25 | ||
US10/183,789 US6791839B2 (en) | 2002-06-25 | 2002-06-25 | Thermal interface materials and methods for their preparation and use |
PCT/US2003/010744 WO2004001844A2 (en) | 2002-06-25 | 2003-04-08 | Thermal interface materials and methods for their preparation and use |
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KR20050024384A true KR20050024384A (ko) | 2005-03-10 |
KR101011940B1 KR101011940B1 (ko) | 2011-02-08 |
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US (1) | US6791839B2 (ko) |
EP (1) | EP1579501A2 (ko) |
JP (1) | JP4532267B2 (ko) |
KR (1) | KR101011940B1 (ko) |
AU (1) | AU2003221683A1 (ko) |
TW (1) | TWI265180B (ko) |
WO (1) | WO2004001844A2 (ko) |
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- 2003-04-08 KR KR1020047021068A patent/KR101011940B1/ko active IP Right Grant
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- 2003-04-08 WO PCT/US2003/010744 patent/WO2004001844A2/en active Application Filing
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US20030234074A1 (en) | 2003-12-25 |
TWI265180B (en) | 2006-11-01 |
TW200400229A (en) | 2004-01-01 |
KR101011940B1 (ko) | 2011-02-08 |
WO2004001844A2 (en) | 2003-12-31 |
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