KR20040103946A - 연마 조성물 - Google Patents

연마 조성물 Download PDF

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Publication number
KR20040103946A
KR20040103946A KR10-2004-7013000A KR20047013000A KR20040103946A KR 20040103946 A KR20040103946 A KR 20040103946A KR 20047013000 A KR20047013000 A KR 20047013000A KR 20040103946 A KR20040103946 A KR 20040103946A
Authority
KR
South Korea
Prior art keywords
polishing
polishing composition
slurry
composition
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7013000A
Other languages
English (en)
Korean (ko)
Inventor
쉬하오펑
퀀시존
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Publication of KR20040103946A publication Critical patent/KR20040103946A/ko
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR10-2004-7013000A 2002-02-21 2003-02-14 연마 조성물 Ceased KR20040103946A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/081,707 2002-02-21
US10/081,707 US6685757B2 (en) 2002-02-21 2002-02-21 Polishing composition
PCT/US2003/004684 WO2003072669A2 (en) 2002-02-21 2003-02-14 Polishing composition

Publications (1)

Publication Number Publication Date
KR20040103946A true KR20040103946A (ko) 2004-12-09

Family

ID=27733294

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7013000A Ceased KR20040103946A (ko) 2002-02-21 2003-02-14 연마 조성물

Country Status (8)

Country Link
US (1) US6685757B2 (enExample)
EP (1) EP1478492A2 (enExample)
JP (1) JP2005518668A (enExample)
KR (1) KR20040103946A (enExample)
CN (1) CN100446926C (enExample)
AU (1) AU2003215261A1 (enExample)
TW (1) TWI262209B (enExample)
WO (1) WO2003072669A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8877643B2 (en) 2009-06-05 2014-11-04 Sumco Corporation Method of polishing a silicon wafer

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JP4593064B2 (ja) * 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
KR100516886B1 (ko) * 2002-12-09 2005-09-23 제일모직주식회사 실리콘 웨이퍼의 최종 연마용 슬러리 조성물
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP4532149B2 (ja) * 2004-03-30 2010-08-25 ニッタ・ハース株式会社 シリコンウエハ研磨用組成物およびシリコンウエハの研磨方法
JP2006352043A (ja) * 2005-06-20 2006-12-28 Nitta Haas Inc 半導体研磨用組成物
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
JP5196819B2 (ja) * 2007-03-19 2013-05-15 ニッタ・ハース株式会社 研磨用組成物
JP2008270584A (ja) * 2007-04-23 2008-11-06 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物及び研磨加工方法
JP2009231486A (ja) * 2008-03-21 2009-10-08 Kao Corp シリコンウエハ用研磨液組成物
JP5474400B2 (ja) * 2008-07-03 2014-04-16 株式会社フジミインコーポレーテッド 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法
DE102009028762A1 (de) * 2009-08-20 2011-03-03 Rena Gmbh Verfahren zum Ätzen von Siliziumoberflächen
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
JP5492603B2 (ja) * 2010-03-02 2014-05-14 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
KR20130014588A (ko) * 2010-07-02 2013-02-07 가부시키가이샤 사무코 실리콘 웨이퍼의 연마 방법
DE112011102297B4 (de) * 2010-07-08 2020-10-08 Sumco Corporation Verfahren zum Polieren von Siliziumwafern
KR101685144B1 (ko) * 2011-01-21 2016-12-12 캐보트 마이크로일렉트로닉스 코포레이션 개선된 psd 성능을 갖는 규소 연마 조성물
RU2467047C1 (ru) * 2011-05-04 2012-11-20 Александр Николаевич Коротков Абразивно-притирочная паста
KR20120136882A (ko) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
MY171840A (en) 2011-10-24 2019-11-04 Fujimi Inc Composition for polishing purposes,polishing method using same,and method for producing substrate
TWI582184B (zh) 2012-01-16 2017-05-11 福吉米股份有限公司 研磨用組成物、其製造方法、稀釋用原液、矽基板之製造方法、及矽基板
TWI650408B (zh) 2012-01-16 2019-02-11 日商福吉米股份有限公司 研磨用組成物，其製造方法，矽基板之製造方法及矽基板
KR102155205B1 (ko) 2012-08-31 2020-09-11 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 기판의 제조 방법
JP6029895B2 (ja) * 2012-08-31 2016-11-24 株式会社フジミインコーポレーテッド 研磨用組成物及び基板の製造方法
JP6087143B2 (ja) * 2012-12-28 2017-03-01 花王株式会社 シリコンウェーハ用研磨液組成物
DE102013205448A1 (de) * 2013-03-27 2014-10-16 Siltronic Ag Verfahren zum Polieren eines Substrates aus Halbleitermaterial
US9012327B2 (en) 2013-09-18 2015-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Low defect chemical mechanical polishing composition
CN105802509B (zh) * 2014-12-29 2018-10-26 安集微电子（上海）有限公司 一种组合物在阻挡层抛光中的应用
JP6572299B2 (ja) 2015-02-19 2019-09-04 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物および研磨方法
WO2017169154A1 (ja) * 2016-03-30 2017-10-05 株式会社フジミインコーポレーテッド 研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法
US20200010727A1 (en) * 2017-02-20 2020-01-09 Fujimi Incorporated Intermediate polishing composition for silicon substrate and polishing composition set for silicon substrate
JP6822432B2 (ja) * 2018-02-23 2021-01-27 株式会社Sumco ウェーハの片面研磨方法
US11600499B2 (en) * 2018-06-27 2023-03-07 Tokyo Electron Limited Substrate cleaning method, substrate cleaning system, and storage medium
CN110551453A (zh) * 2018-12-25 2019-12-10 清华大学 一种抛光组合物
CN111269695A (zh) * 2020-02-29 2020-06-12 上海大学 花生状氧化硅磨粒及其制备方法和应用
JP7619796B2 (ja) * 2020-12-18 2025-01-22 山口精研工業株式会社 フツリン酸ガラス用研磨剤組成物、及びフツリン酸ガラス用研磨剤組成物を用いた研磨方法
CN115851138B (zh) * 2022-12-23 2024-06-28 博力思(天津)电子科技有限公司 一种可减少硅片表面颗粒沾污的硅精抛液

Family Cites Families (10)

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US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
JPH10309660A (ja) 1997-05-07 1998-11-24 Tokuyama Corp 仕上げ研磨剤
JP4052607B2 (ja) 1998-04-20 2008-02-27 株式会社東芝 研磨剤及び半導体基板のポリッシング方法
JPH11349925A (ja) * 1998-06-05 1999-12-21 Fujimi Inc エッジポリッシング用組成物
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP4090589B2 (ja) 1998-09-01 2008-05-28 株式会社フジミインコーポレーテッド 研磨用組成物
JP4132432B2 (ja) * 1999-07-02 2008-08-13 日産化学工業株式会社 研磨用組成物
JP3563017B2 (ja) 2000-07-19 2004-09-08 ロデール・ニッタ株式会社 研磨組成物、研磨組成物の製造方法及びポリシング方法
JP2002043258A (ja) 2000-07-24 2002-02-08 Asahi Kasei Corp 金属膜用研磨組成物
JP2002110596A (ja) * 2000-10-02 2002-04-12 Mitsubishi Electric Corp 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8877643B2 (en) 2009-06-05 2014-11-04 Sumco Corporation Method of polishing a silicon wafer

Also Published As

Publication number Publication date
WO2003072669A2 (en) 2003-09-04
WO2003072669A3 (en) 2004-03-04
US20030154659A1 (en) 2003-08-21
EP1478492A2 (en) 2004-11-24
US6685757B2 (en) 2004-02-03
CN1635940A (zh) 2005-07-06
AU2003215261A1 (en) 2003-09-09
WO2003072669A9 (en) 2004-04-01
AU2003215261A8 (en) 2003-09-09
JP2005518668A (ja) 2005-06-23
TWI262209B (en) 2006-09-21
TW200303343A (en) 2003-09-01
CN100446926C (zh) 2008-12-31

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Patent event date: 20040820

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