TWI262209B - Polishing composition - Google Patents
Polishing composition Download PDFInfo
- Publication number
- TWI262209B TWI262209B TW092103519A TW92103519A TWI262209B TW I262209 B TWI262209 B TW I262209B TW 092103519 A TW092103519 A TW 092103519A TW 92103519 A TW92103519 A TW 92103519A TW I262209 B TWI262209 B TW I262209B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- polishing composition
- water
- weight
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 66
- 239000000203 mixture Substances 0.000 title claims abstract description 53
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229920002678 cellulose Polymers 0.000 claims abstract description 15
- 239000001913 cellulose Substances 0.000 claims abstract description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract 4
- 239000002245 particle Substances 0.000 claims description 29
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 11
- 239000011164 primary particle Substances 0.000 claims description 5
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000011163 secondary particle Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000011782 vitamin Substances 0.000 claims description 2
- 229940088594 vitamin Drugs 0.000 claims description 2
- 229930003231 vitamin Natural products 0.000 claims description 2
- 235000013343 vitamin Nutrition 0.000 claims description 2
- 150000003722 vitamin derivatives Chemical class 0.000 claims description 2
- 230000005660 hydrophilic surface Effects 0.000 claims 2
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 claims 1
- 239000002775 capsule Substances 0.000 claims 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 claims 1
- 125000004494 ethyl ester group Chemical group 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000008187 granular material Substances 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- -1 tetramethyl ketone Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000008119 colloidal silica Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 19
- 239000002002 slurry Substances 0.000 description 18
- 238000010790 dilution Methods 0.000 description 11
- 239000012895 dilution Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 238000009472 formulation Methods 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000001856 Ethyl cellulose Substances 0.000 description 5
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229920001249 ethyl cellulose Polymers 0.000 description 5
- 235000019325 ethyl cellulose Nutrition 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002689 soil Substances 0.000 description 3
- 206010036790 Productive cough Diseases 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 210000003802 sputum Anatomy 0.000 description 2
- 208000024794 sputum Diseases 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- ZYSDERHSJJEJDS-UHFFFAOYSA-M tetrakis-decylazanium;hydroxide Chemical compound [OH-].CCCCCCCCCC[N+](CCCCCCCCCC)(CCCCCCCCCC)CCCCCCCCCC ZYSDERHSJJEJDS-UHFFFAOYSA-M 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 241000380131 Ammophila arenaria Species 0.000 description 1
- 241001553178 Arachis glabrata Species 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 102000009123 Fibrin Human genes 0.000 description 1
- 108010073385 Fibrin Proteins 0.000 description 1
- BWGVNKXGVNDBDI-UHFFFAOYSA-N Fibrin monomer Chemical compound CNC(=O)CNC(=O)CN BWGVNKXGVNDBDI-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229920003064 carboxyethyl cellulose Polymers 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229950003499 fibrin Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 235000020232 peanut Nutrition 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/081,707 US6685757B2 (en) | 2002-02-21 | 2002-02-21 | Polishing composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200303343A TW200303343A (en) | 2003-09-01 |
| TWI262209B true TWI262209B (en) | 2006-09-21 |
Family
ID=27733294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092103519A TWI262209B (en) | 2002-02-21 | 2003-02-20 | Polishing composition |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6685757B2 (enExample) |
| EP (1) | EP1478492A2 (enExample) |
| JP (1) | JP2005518668A (enExample) |
| KR (1) | KR20040103946A (enExample) |
| CN (1) | CN100446926C (enExample) |
| AU (1) | AU2003215261A1 (enExample) |
| TW (1) | TWI262209B (enExample) |
| WO (1) | WO2003072669A2 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4593064B2 (ja) * | 2002-09-30 | 2010-12-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| KR100516886B1 (ko) * | 2002-12-09 | 2005-09-23 | 제일모직주식회사 | 실리콘 웨이퍼의 최종 연마용 슬러리 조성물 |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| JP4668528B2 (ja) * | 2003-09-05 | 2011-04-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP4532149B2 (ja) * | 2004-03-30 | 2010-08-25 | ニッタ・ハース株式会社 | シリコンウエハ研磨用組成物およびシリコンウエハの研磨方法 |
| JP2006352043A (ja) * | 2005-06-20 | 2006-12-28 | Nitta Haas Inc | 半導体研磨用組成物 |
| US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
| JP5196819B2 (ja) * | 2007-03-19 | 2013-05-15 | ニッタ・ハース株式会社 | 研磨用組成物 |
| JP2008270584A (ja) * | 2007-04-23 | 2008-11-06 | Nippon Chem Ind Co Ltd | 半導体ウエハ研磨用組成物及び研磨加工方法 |
| JP2009231486A (ja) * | 2008-03-21 | 2009-10-08 | Kao Corp | シリコンウエハ用研磨液組成物 |
| JP5474400B2 (ja) * | 2008-07-03 | 2014-04-16 | 株式会社フジミインコーポレーテッド | 半導体用濡れ剤、それを用いた研磨用組成物および研磨方法 |
| US8877643B2 (en) | 2009-06-05 | 2014-11-04 | Sumco Corporation | Method of polishing a silicon wafer |
| DE102009028762A1 (de) * | 2009-08-20 | 2011-03-03 | Rena Gmbh | Verfahren zum Ätzen von Siliziumoberflächen |
| US8815110B2 (en) * | 2009-09-16 | 2014-08-26 | Cabot Microelectronics Corporation | Composition and method for polishing bulk silicon |
| US8883034B2 (en) * | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
| US8697576B2 (en) * | 2009-09-16 | 2014-04-15 | Cabot Microelectronics Corporation | Composition and method for polishing polysilicon |
| JP5492603B2 (ja) * | 2010-03-02 | 2014-05-14 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| KR20130014588A (ko) * | 2010-07-02 | 2013-02-07 | 가부시키가이샤 사무코 | 실리콘 웨이퍼의 연마 방법 |
| DE112011102297B4 (de) * | 2010-07-08 | 2020-10-08 | Sumco Corporation | Verfahren zum Polieren von Siliziumwafern |
| KR101685144B1 (ko) * | 2011-01-21 | 2016-12-12 | 캐보트 마이크로일렉트로닉스 코포레이션 | 개선된 psd 성능을 갖는 규소 연마 조성물 |
| RU2467047C1 (ru) * | 2011-05-04 | 2012-11-20 | Александр Николаевич Коротков | Абразивно-притирочная паста |
| KR20120136882A (ko) * | 2011-06-10 | 2012-12-20 | 동우 화인켐 주식회사 | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 |
| MY171840A (en) | 2011-10-24 | 2019-11-04 | Fujimi Inc | Composition for polishing purposes,polishing method using same,and method for producing substrate |
| TWI582184B (zh) | 2012-01-16 | 2017-05-11 | 福吉米股份有限公司 | 研磨用組成物、其製造方法、稀釋用原液、矽基板之製造方法、及矽基板 |
| TWI650408B (zh) | 2012-01-16 | 2019-02-11 | 日商福吉米股份有限公司 | 研磨用組成物，其製造方法，矽基板之製造方法及矽基板 |
| KR102155205B1 (ko) | 2012-08-31 | 2020-09-11 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 및 기판의 제조 방법 |
| JP6029895B2 (ja) * | 2012-08-31 | 2016-11-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び基板の製造方法 |
| JP6087143B2 (ja) * | 2012-12-28 | 2017-03-01 | 花王株式会社 | シリコンウェーハ用研磨液組成物 |
| DE102013205448A1 (de) * | 2013-03-27 | 2014-10-16 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
| US9012327B2 (en) | 2013-09-18 | 2015-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low defect chemical mechanical polishing composition |
| CN105802509B (zh) * | 2014-12-29 | 2018-10-26 | 安集微电子（上海）有限公司 | 一种组合物在阻挡层抛光中的应用 |
| JP6572299B2 (ja) | 2015-02-19 | 2019-09-04 | 株式会社フジミインコーポレーテッド | シリコンウェーハ研磨用組成物および研磨方法 |
| WO2017169154A1 (ja) * | 2016-03-30 | 2017-10-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物セット、前研磨用組成物、及びシリコンウェーハの研磨方法 |
| US20200010727A1 (en) * | 2017-02-20 | 2020-01-09 | Fujimi Incorporated | Intermediate polishing composition for silicon substrate and polishing composition set for silicon substrate |
| JP6822432B2 (ja) * | 2018-02-23 | 2021-01-27 | 株式会社Sumco | ウェーハの片面研磨方法 |
| US11600499B2 (en) * | 2018-06-27 | 2023-03-07 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning system, and storage medium |
| CN110551453A (zh) * | 2018-12-25 | 2019-12-10 | 清华大学 | 一种抛光组合物 |
| CN111269695A (zh) * | 2020-02-29 | 2020-06-12 | 上海大学 | 花生状氧化硅磨粒及其制备方法和应用 |
| JP7619796B2 (ja) * | 2020-12-18 | 2025-01-22 | 山口精研工業株式会社 | フツリン酸ガラス用研磨剤組成物、及びフツリン酸ガラス用研磨剤組成物を用いた研磨方法 |
| CN115851138B (zh) * | 2022-12-23 | 2024-06-28 | 博力思(天津)电子科技有限公司 | 一种可减少硅片表面颗粒沾污的硅精抛液 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352277A (en) * | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
| JPH10309660A (ja) | 1997-05-07 | 1998-11-24 | Tokuyama Corp | 仕上げ研磨剤 |
| JP4052607B2 (ja) | 1998-04-20 | 2008-02-27 | 株式会社東芝 | 研磨剤及び半導体基板のポリッシング方法 |
| JPH11349925A (ja) * | 1998-06-05 | 1999-12-21 | Fujimi Inc | エッジポリッシング用組成物 |
| JP3810588B2 (ja) * | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP4090589B2 (ja) | 1998-09-01 | 2008-05-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| JP4132432B2 (ja) * | 1999-07-02 | 2008-08-13 | 日産化学工業株式会社 | 研磨用組成物 |
| JP3563017B2 (ja) | 2000-07-19 | 2004-09-08 | ロデール・ニッタ株式会社 | 研磨組成物、研磨組成物の製造方法及びポリシング方法 |
| JP2002043258A (ja) | 2000-07-24 | 2002-02-08 | Asahi Kasei Corp | 金属膜用研磨組成物 |
| JP2002110596A (ja) * | 2000-10-02 | 2002-04-12 | Mitsubishi Electric Corp | 半導体加工用研磨剤およびこれに用いる分散剤、並びに上記半導体加工用研磨剤を用いた半導体装置の製造方法 |
-
2002
- 2002-02-21 US US10/081,707 patent/US6685757B2/en not_active Expired - Lifetime
-
2003
- 2003-02-14 KR KR10-2004-7013000A patent/KR20040103946A/ko not_active Ceased
- 2003-02-14 AU AU2003215261A patent/AU2003215261A1/en not_active Abandoned
- 2003-02-14 CN CNB038043130A patent/CN100446926C/zh not_active Expired - Lifetime
- 2003-02-14 EP EP03711077A patent/EP1478492A2/en not_active Withdrawn
- 2003-02-14 JP JP2003571362A patent/JP2005518668A/ja active Pending
- 2003-02-14 WO PCT/US2003/004684 patent/WO2003072669A2/en not_active Ceased
- 2003-02-20 TW TW092103519A patent/TWI262209B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003072669A2 (en) | 2003-09-04 |
| WO2003072669A3 (en) | 2004-03-04 |
| US20030154659A1 (en) | 2003-08-21 |
| EP1478492A2 (en) | 2004-11-24 |
| US6685757B2 (en) | 2004-02-03 |
| CN1635940A (zh) | 2005-07-06 |
| AU2003215261A1 (en) | 2003-09-09 |
| WO2003072669A9 (en) | 2004-04-01 |
| AU2003215261A8 (en) | 2003-09-09 |
| KR20040103946A (ko) | 2004-12-09 |
| JP2005518668A (ja) | 2005-06-23 |
| TW200303343A (en) | 2003-09-01 |
| CN100446926C (zh) | 2008-12-31 |
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