KR20040086160A - 지문 인식용 반도체 장치 - Google Patents
지문 인식용 반도체 장치 Download PDFInfo
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- KR20040086160A KR20040086160A KR1020040005939A KR20040005939A KR20040086160A KR 20040086160 A KR20040086160 A KR 20040086160A KR 1020040005939 A KR1020040005939 A KR 1020040005939A KR 20040005939 A KR20040005939 A KR 20040005939A KR 20040086160 A KR20040086160 A KR 20040086160A
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- Prior art keywords
- fingerprint recognition
- semiconductor chip
- substrate
- fingerprint
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 248
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 239000000463 material Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 11
- 238000010408 sweeping Methods 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims description 75
- 229920005989 resin Polymers 0.000 claims description 75
- 238000007789 sealing Methods 0.000 claims description 50
- 229910000679 solder Inorganic materials 0.000 claims description 22
- 229920001721 polyimide Polymers 0.000 claims description 17
- 239000004593 Epoxy Substances 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 13
- 239000009719 polyimide resin Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- 239000004642 Polyimide Substances 0.000 description 14
- 125000006850 spacer group Chemical group 0.000 description 12
- 238000001514 detection method Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000011162 core material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/1335—Combining adjacent partial images (e.g. slices) to create a composite input or reference pattern; Tracking a sweeping finger movement
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/321—Disposition
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- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
- Image Input (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
- 지문 인식을 행하는 지문 인식 영역을 갖는 반도체 칩과,상기 지문 인식 영역과 대응하는 위치에 개구부가 형성된 기판을 포함하고,상기 지문 인식 영역이 상기 개구부와 대향하도록 상기 반도체 칩을 상기 기판에 플립칩 접합(flip chip bonded)하고,상기 반도체 칩과 상기 기판과의 사이에 상기 개구부의 형성 위치를 제외하고 언더필재(under-fill material)를 배치한 것을 특징으로 하는 지문 인식용 반도체 장치.
- 지문 인식을 행하는 지문 인식 영역을 갖는 반도체 칩과,상기 지문 인식 영역과 대응하는 위치에 개구부가 형성된 기판과,상기 반도체 칩 및 기판을 보호하는 밀봉 수지를 포함하고,상기 지문 인식 영역이 상기 개구부와 대향하도록 상기 반도체 칩을 상기 기판에 배치함과 함께, 상기 반도체 칩과 상기 기판을 상기 기판에 형성한 와이어용 개구부를 통하여 와이어 접속하고,상기 기판의 반도체 칩 배치면에 대한 반대측면에, 상기 밀봉 수지를 형성한 것을 특징으로 하는 지문 인식용 반도체 장치.
- 지문 인식을 행하는 지문 인식 영역을 갖는 반도체 칩과,상기 반도체 칩을 탑재하는 기판을 포함하고,상기 반도체 칩에 관통 비아를 형성함으로써, 상기 반도체 칩의 지문 인식 영역 형성면에 대한 반대측면이 상기 기판과 대향하도록, 상기 반도체 칩을 상기 기판에 플립칩 접합하고,상기 반도체 칩과 상기 기판과의 사이에 언더필재를 배치한 것을 특징으로 하는 지문 인식용 반도체 장치.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 기판은 유리 에폭시재를 기재로 하고 있는 것을 특징으로 하는 지문 인식용 반도체 장치.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 기판은 폴리이미드 수지를 기재로 하고 있는 것을 특징으로 하는 지문 인식용 반도체 장치.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 기판은 플렉시블 기판인 것을 특징으로 하는 지문 인식용 반도체 장치.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 기판은 TAB(Tape Automated Bonding) 기판인 것을 특징으로 하는 지문인식용 반도체 장치.
- 제1항 내지 제7항 중 어느 한 항에 있어서,상기 기판에 형성되는 외부 접속 단자를 땜납 볼(solder ball)에 의해 구성한 것을 특징으로 하는 지문 인식용 반도체 장치.
- 지문 인식을 행하는 지문 인식 영역을 가짐과 함께 관통 비아가 형성된 반도체 칩과,상기 반도체 칩의 지문 인식 영역 형성면에 대한 반대측면에 형성되어 있고, 상기 관통 비아에 의해 상기 지문 인식 영역과 전기적으로 접속되는 재배선(re-wiring)과,상기 재배선의 외부 접속 단자 형성 부위를 제외하고, 상기 반대측면을 피복하도록 형성된 절연층을 갖는 것을 특징으로 하는 지문 인식용 반도체 장치.
- 제1항 내지 제9항 중 어느 한 항에 있어서,상기 반도체 칩은 손가락으로 상기 지문 인식 영역을 스위핑함으로써 지문 인식을 행하는 정전 용량식의 반도체 칩인 것을 특징으로 하는 지문 인식용 반도체 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2003097095A JP4160851B2 (ja) | 2003-03-31 | 2003-03-31 | 指紋認識用半導体装置 |
JPJP-P-2003-00097095 | 2003-03-31 |
Publications (2)
Publication Number | Publication Date |
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KR20040086160A true KR20040086160A (ko) | 2004-10-08 |
KR100946074B1 KR100946074B1 (ko) | 2010-03-10 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020040005939A KR100946074B1 (ko) | 2003-03-31 | 2004-01-30 | 지문 인식용 반도체 장치 |
Country Status (4)
Country | Link |
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US (3) | US7015579B2 (ko) |
JP (1) | JP4160851B2 (ko) |
KR (1) | KR100946074B1 (ko) |
CN (2) | CN100413068C (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100914615B1 (ko) * | 2007-09-10 | 2009-09-02 | 주식회사 유니온커뮤니티 | 생체지문을 구별하여 인식하는 지문인식장치 및 방법 |
KR20130119320A (ko) * | 2010-07-26 | 2013-10-31 | 하마마츠 포토닉스 가부시키가이샤 | 인터포저의 제조 방법 |
WO2013172604A1 (ko) * | 2012-05-15 | 2013-11-21 | 크루셜텍(주) | 지문센서 패키지 및 그 제조방법 |
KR20160091493A (ko) | 2015-01-23 | 2016-08-03 | 삼성전기주식회사 | 지문센서 모듈 및 이의 제조방법 |
Families Citing this family (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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KR100914615B1 (ko) * | 2007-09-10 | 2009-09-02 | 주식회사 유니온커뮤니티 | 생체지문을 구별하여 인식하는 지문인식장치 및 방법 |
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KR101880148B1 (ko) * | 2010-07-26 | 2018-07-20 | 하마마츠 포토닉스 가부시키가이샤 | 인터포저의 제조 방법 |
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KR101356143B1 (ko) * | 2012-05-15 | 2014-01-27 | 크루셜텍 (주) | 지문센서 패키지 및 그 제조방법 |
KR20160091493A (ko) | 2015-01-23 | 2016-08-03 | 삼성전기주식회사 | 지문센서 모듈 및 이의 제조방법 |
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US7015579B2 (en) | 2006-03-21 |
JP2004304054A (ja) | 2004-10-28 |
US20060108686A1 (en) | 2006-05-25 |
CN1259024C (zh) | 2006-06-14 |
US7989938B2 (en) | 2011-08-02 |
CN100413068C (zh) | 2008-08-20 |
JP4160851B2 (ja) | 2008-10-08 |
KR100946074B1 (ko) | 2010-03-10 |
CN1828880A (zh) | 2006-09-06 |
US20040188838A1 (en) | 2004-09-30 |
CN1533741A (zh) | 2004-10-06 |
US20090184408A1 (en) | 2009-07-23 |
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