TWI538113B - 微機電晶片封裝及其製造方法 - Google Patents
微機電晶片封裝及其製造方法 Download PDFInfo
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/732—Location after the connecting process
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Description
本發明係有關於一種微機電晶片封裝及其製造方法,特別是有關於一種具有開口的微機電晶片封裝及其製造方法。
微機電系統(Micro Electro Mechanical Systems,MEMS),其定義為一個智慧型微小化的系統,包含感測、處理或致動的功能,包含兩個或多個電子、機械、光學、化學、生物、磁學或其他性質整合到一個單一或多晶片上。其應用領域極為廣泛,包括製造業、自動化、資訊與通訊、航太工業、交通運輸、土木營建、環境保護、農林漁牧等。舉例來說,微型麥克風就是個典型的例子,廣泛配備於目前許多行動裝置(mobile device)。微型麥克風就是由一微機電晶片所構成,由於需要感測聲波的震動,在晶片封裝上必須留有開口。
請參照圖六,其繪示一種習知微機電晶片封裝。習知微機電晶片封裝600,係將微機電晶片602,比如麥克風晶片,貼附於一封裝載體604,比如是球柵陣列封裝基板(Ball Grid Array Substrate)。微機電晶片602具有一感測區606,及多個對外接點608,而接點608以導線610與封裝載體604電性連接。而上蓋612具有一開口614,對應感測區606,固定於封裝載體604上,以利微機電晶片602的感測區606可以接收外部的聲波。微機電晶
片封裝600則透過焊球616焊接於主機板上,微機電晶片602可以透過感測區606感測聲波,並轉換為數位訊號,以提供主機板進行後續處理。
如圖六所示,習知微機電晶片封裝600的設計均為開口614朝上,而且上蓋612與封裝載體604所形成的容納空間,並沒有任何填充材質,因此外部的空氣、粉塵、水蒸氣,甚至水等都可以經由開口614進入容納空間中,很可能造成微機電晶片602的汙染,甚至影響其操作。而且,上蓋612需要額外開模製造,成本較高。
因此本發明的觀點之一就在於提供一種微機電晶片封裝及其製造方法,可以簡化封裝結構及製程,降低成本。
本發明的另一觀點就在於提供一種微機電晶片封裝及其製造方法,其開口朝下,也就是面對主機板,降低其受外界污染的機會。
本發明的在一觀點就在於提供一種微機電晶片封裝及其製造方法,可以保護微機電晶片感應元件以外的區域,防止其遭受汙染,提高產品可靠度。
根據本發明的上述觀點,提供一種微機電晶片封裝,包括:一封裝基板、一圍阻環、一微機電晶片以及一封裝材料。封裝基板具有一內表面及對應之一外表面,並具有一訊號開口,穿透內表面及外表面。封裝基板具有至少一內接點,外表面上具有至少一外接點,內接點與外接點電性連接。圍阻環配置於內表面,並環繞訊號開口;微機電晶片具有一主動表面,主動表面具有至少一感應元件及至少一晶片接點。主動表面貼附於圍阻環,使得感應元件位於圍阻環內,晶片接點與內接點電性連接。封
裝材料包覆微機電晶片、圍阻環外側及內接點。
根據本發明的上述觀點,也提出一種微機電晶片封裝,包括:一封裝基板、一圍阻環、一微機電晶片、以及一封裝材料。封裝基板,具有一內表面及對應之一外表面,並具有一訊號開口及至少一打線開口,穿透該內表面及該外表面,在打線開口周緣且在內表面及外表面之間具有至少一內接點,外表面上具有至少一外接點,內接點與外接點電性連接。圍阻環配置於內表面,並環繞訊號開口;微機電晶片具有一主動表面,主動表面具有至少一感應元件及至少一晶片接點。主動表面貼附於圍阻環,使得感應元件位於圍阻環內,晶片接點藉由一導線穿過打線開口與內接點電性連接。封裝材料包覆微機電晶片、圍阻環外側及打線開口。
根據本發明的上述觀點,還提出一種微機電晶片封裝方法,包括:提供一封裝基板,封裝基板具有一內表面及對應之一外表面,並具有一訊號開口及至少一打線開口,穿透內表面及外表面,在打線開口周緣且在內表面及外表面之間具有至少一內接點,外表面上具有至少一外接點,內接點與外接點電性連接。形成一圍阻環於內表面上,並環繞訊號開口。接著,提供一微機電晶片,微機電晶片具有一主動表面,主動表面具有至少一感應元件,及至少一晶片接點,主動表面貼附於圍阻環,使得感應元件位於圍阻環內。進行一打線步驟,藉由一導線穿過打線開口將晶片接點與內接點電性連接。進行一封裝步驟,以一封裝材料,包覆微機電晶片,圍阻環外側及打線開口。
在本發明的某些實施例中,外接點更配置一焊球,以對外連接。圍阻環之材質為兩階段特性熱固性樹脂黏合膠(B-Stage Epoxy)。感應元
件包括音頻感應元件。
本發明的微機電晶片封裝,利用圍阻環環繞訊號開口,使感應元件位於其中得以接收外部的訊號(比如聲波),並透過圍阻體可以阻隔微機電晶片的其他部分與外界接觸,可以防止汙染,且提高產品的可靠度。此外本發明的微機電晶片封裝,其訊號開口與焊球同側,面對主機板,可以減低外部粉塵自訊號開口進入封裝內部的機會,可以保護微機電晶片。另外,本發明的微機電晶片封裝,封裝材料可以包覆除了感應元件以外的區域,強化微機電晶片的保護,可以明顯提高產品的穩定度及可靠度。
100‧‧‧封裝基板
102‧‧‧內表面
104‧‧‧外表面
106‧‧‧訊號開口
108‧‧‧打線開口
110‧‧‧階梯狀結構
208‧‧‧導線
300‧‧‧封裝材料
302‧‧‧焊球
600‧‧‧微機電晶片封裝
602‧‧‧微機電晶片
604‧‧‧封裝載體
112‧‧‧圍阻環
114‧‧‧內接點
116‧‧‧外接點
200‧‧‧微機電晶片
202‧‧‧主動表面
204‧‧‧感應元件
206‧‧‧晶片接點
606‧‧‧感測區
608‧‧‧接點
610‧‧‧導線
612‧‧‧上蓋
614‧‧‧開口
616‧‧‧焊球
圖一至圖五繪示根據本發明一實施例,一種微機電晶片封裝方法各步驟的剖面示意圖。
圖三A繪示對應圖三之仰視圖。
圖六繪示一種習知微機電晶片封裝。
關於本發明的優點,精神與特徵,將以實施例並參照所附圖式,進行詳細說明與討論。值得注意的是,為了讓本發明能更容易理解,後附的圖式僅為示意圖,相關尺寸並非以實際比例繪示。
為了讓本發明的優點,精神與特徵可以更容易且明確地了解,後續將以實施例並參照所附圖式進行詳述與討論。值得注意的是,這些實施例僅為本發明代表性的實施例,其中所舉例的特定方法、裝置、條件、材質等並非用以限定本發明或對應的實施例。
請參照圖一至圖五,其繪示根據本發明一實施例,一種微機
電晶片封裝方法各步驟的剖面示意圖。首先參照圖一,本發明的微機電晶片封裝所採用的封裝載體(package carrier)為一封裝基板100,較佳是一球柵陣列封裝基板(Ball Grid Array Substrate)。封裝基板100係由一多層高積集度電路板所形成,其具有一內表面102及對應的一外表面104,且具有一訊號開口106及打線開口108。訊號開口106及打線開口108貫穿內表面102及外表面104。打線開口108的周緣具有一階梯狀結構110,此階梯狀結構110介於內表面102及外表面104之間,比如為多層電路板的其中一層,其上配置有多個內接點114(繪示於圖三A)。外表面104則配置有多個外接點116(繪示於圖三A),內接點及外接點係藉由多層電路板的內部線路電性連接。值得注意的是,本實施例中雖然以球柵陣列封裝基板為例,但本發明並不限於採用此類基板,也可以是PGA基板、LGA基板、軟性基板、陶瓷基板、玻璃基板或其他類似基板。
接著,請參照圖二,在訊號開口106周緣的內表面102上,形成一圍阻環112。形成圍阻環112的方式可包括印刷、點膠或黏貼等方式形成於封裝基板100上,而圍阻環112的材質較佳是兩階段特性熱固性樹脂黏合膠,也就是一般習稱的B-stage膠(B-stage Epoxy)。圍阻環112會環繞訊號開口106呈一環狀。較佳的,圍阻環112可先進行第一階段的固化,溫度約90度C至150度C,時間約1小時至3小時(其固化時間及溫度可隨製程所需而調整),使圍阻環112在基板100上形成半固化之膠膜狀。
接著,請參照圖三,提供一微機電晶片200,微機電晶片200具有一主動表面202,主動表面202具有至少一感應元件204,比如是一音頻感應元件,及至少一晶片接點206。微機電晶片200以主動表面202貼附於圍
阻環112,且使得感應元件204位於圍阻環112內,並對應訊號開口106。然後,進行一打線步驟(wire bonding),藉由一導線208,比如是金線(gold wire)、銀線(Silver wire)、銅線(copper wire)或其合金線,穿過打線開口108將晶片接點206與內接點114電性連接。值得一提的是,雖然本實施例中係以打線方式為例,然而本發明中微機電晶片與封裝基板的連接,並不限於此種方式,也可以是覆晶方式(flip chip)或者捲帶式自動接合(Tape Automatic Bonding,TAB)等。另一方面,封裝基板的內接點,並不限於配置於階梯狀結構中,也可以配置於內表面,直接與微機電晶片接合,此時打線開口即可以省略。內接點也可以直接配置於外表面,透過打線開口進行打線連接。
請參照圖四,接著進行一封裝步驟,以一封裝材料300,包覆微機電晶片200、圍阻環112外側及打線開口108。其它可行之實施方式例如是,在封裝基板100之外表面104預先貼設一層離型膜(圖式未揭),離型膜遮蔽了訊號開口106及打線開口108,再配合模具進行封裝,因此,微機電晶片200的主動表面202中,除了圍阻環112所環繞的區域(包含感應元件)外,皆被封裝材料300所包覆。而封裝材料300包覆了打線開口108,也包覆導線208及內接點114。待封裝製程完成後,再由該封裝基板100之外表面104移除該離型膜(圖式未揭),其中訊號開口106、圍阻環112及感應元件204所構成的空間,並無填入封裝材料,感應元件204可以透過訊號開口106接收外部的訊號,比如聲波。如上所述,如果內接點直接配置於外表面,則封裝材料為了包覆導線及內接點,會突出於外表面。然而進行封裝步驟中同時也對圍阻環112進行了第二階段固化,溫度約為130度C至180度C,時間約為1小時至3小時(其固化時間及溫度可隨製程所需而調整),以確保兩階段特
性熱固性樹脂黏合膠完全固化,提供微機電晶片200穩固的支撐及黏合,並可以有效阻隔其外側的微機電晶片200與外界接觸。
在某些較佳的實施例中,該圍阻環112之第二階段固化製程亦可在進行封裝步驟前,即已事先進行一道加熱固化步驟後,再一同進入封裝製程亦可達到相同的效果。
請參照圖五,進行一植球步驟(Ball Planting),將焊球302形成於外接點116(參照圖三A)上,以利後續與主機板(或其它連接元件)連接。至此,本發明的微機電晶片封裝即完成。因此本發明的微機電晶片封裝,主要包括一封裝基板100、一圍阻環112、一微機電晶片200以及一封裝材料300。封裝基板100具有一內表面102及對應之一外表面104,並具有一訊號開口106,穿透內表面102及外表面104。封裝基板100具有至少一內接點114,外表面上具有至少一外接點116,內接點114與外接點116電性連接。圍阻環112配置於內表面102,並環繞訊號開口106;微機電晶片200具有一主動表面202,主動表面202具有至少一感應元件204及至少一晶片接點206。主動表面202貼附於圍阻環112,使得感應元件204位於圍阻環112內,晶片接點206與內接點114電性連接。封裝材料300包覆微機電晶片200,圍阻環外側112及內接點114。而其中較佳的是,封裝基板具有至少一打線開口108,穿透內表面102及外表面104,在打線開口108周緣且在內表面102及外表面104之間形成一階梯結構110,其上具有至少一內接點114,有助於減少導線208弧高,減少整體結構之封裝厚度。
綜上所述,本發明的微機電晶片封裝,利用圍阻環環繞訊號開口,使感應元件位於其中得以接收外部的訊號(比如聲波),並透過圍阻環
可以阻隔微機電晶片的其他部分與外界接觸,可以防止汙染,且提高產品的可靠度。而此種結構可以省去外蓋的製造,節省產品成本。此外本發明的微機電晶片封裝,其訊號開口與焊球同側,面對主機板(或其它連接元件),可以減低外部粉塵自訊號開口進入封裝內部的機會,可以保護微機電晶片。另外,本發明的微機電晶片封裝,封裝材料可以包覆除了感應元件以外的區域,包含晶片接點,封裝基板內接點及導線,強化微機電晶片的保護,可以明顯提高產品的穩定度及可靠度。
藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本創作之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧封裝基板
102‧‧‧內表面
104‧‧‧外表面
106‧‧‧訊號開口
108‧‧‧打線開口
110‧‧‧階梯狀結構
112‧‧‧圍阻環
114‧‧‧內接點
116‧‧‧外接點
200‧‧‧微機電晶片
202‧‧‧主動表面
204‧‧‧感應元件
206‧‧‧晶片接點
208‧‧‧導線
300‧‧‧封裝材料
302‧‧‧焊球
Claims (9)
- 一種微機電晶片封裝,包括:一封裝基板,具有一內表面及對應之一外表面,並具有一訊號開口及至少一打線開口,穿透該內表面及該外表面,在該打線開口周緣且在該內表面及該外表面之間具有至少一內接點,該外表面上具有至少一外接點,該內接點與該外接點電性連接;一圍阻環,配置於該內表面,並環繞該訊號開口;一微機電晶片,具有一主動表面,該主動表面具有至少一感應元件,及至少一晶片接點,該主動表面貼附於該圍阻環,使得該感應元件位於該圍阻環內,該晶片接點藉由一導線穿過該打線開口與該內接點電性連接;以及一封裝材料,包覆該微機電晶片、該圍阻環外側及該打線開口;其中,該圍阻環之材質為兩階段特性熱固性樹脂黏合膠(B-Stage)。
- 如請求項1所述之微機電晶片封裝,更包括至少一焊球配置於該外接點。
- 如請求項1所述之微機電晶片封裝,其中該感應元件包括音頻感應元件。
- 一種微機電晶片封裝方法,包括:提供一封裝基板,該封裝基板具有一內表面及對應之一外表面,並具有一訊號開口及至少一打線開口,穿透該內表面及該外表面,在該打線開口周緣且在該內表面及該外表面之間具有至少一內接點,該外表面上具有至少一外接點,該內接點與該外接點電性連接;形成一圍阻環於該內表面上,並環繞該訊號開口;進行該圍阻環之一第一階段固化; 提供一微機電晶片,該微機電晶片具有一主動表面、該主動表面具有至少一感應元件及至少一晶片接點,該主動表面貼附於該圍阻環,使得該感應元件位於該圍阻環內;進行一打線步驟,藉由一導線穿過該打線開口將該晶片接點與該內接點電性連接;以及進行一封裝步驟,以一封裝材料、包覆該微機電晶片、該圍阻環外側及該打線開口,並對該圍阻環進行一第二階段固化;其中,該圍阻環之材質為兩階段特性熱固性樹脂黏合膠(B-Stage)。
- 如請求項4所述之微機電晶片封裝方法,更包括形成至少一焊球於該外接點上。
- 如請求項4所述之微機電晶片封裝方法,其中該感應元件包括音頻感應元件。
- 一種微機電晶片封裝,包括:一封裝基板,具有一內表面及對應之一外表面,並具有一訊號開口,穿透該內表面及該外表面,該封裝基板具有至少一內接點,該外表面上具有至少一外接點,該內接點與該外接點電性連接;一圍阻環,配置於該內表面,並環繞該訊號開口;一微機電晶片,具有一主動表面,該主動表面具有至少一感應元件,及至少一晶片接點,該主動表面貼附於該圍阻環,使得該感應元件位於該圍阻環內,該晶片接點與該內接點電性連接;以及一封裝材料,包覆該微機電晶片、該圍阻環外側及該內接點;其中,該圍阻環之材質為兩階段特性熱固性樹脂黏合膠(B-Stage)。
- 如請求項7所述之微機電晶片封裝,更包括至少一焊球配置於該外接點。
- 如請求項7所述之微機電晶片封裝,其中該感應元件包括音頻感應元件。
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