CN104102902B - 一种半导体指纹识别传感器及其制造方法 - Google Patents
一种半导体指纹识别传感器及其制造方法 Download PDFInfo
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Abstract
本发明公开了一种半导体指纹识别传感器及其制造方法,该半导体指纹识别传感器包括:感应区域、控制区域和接口区域;所述感应区域、所述控制区域和所述接口区域通信连接;所述感应区域感应的指纹信息发送至所述控制区域,所述控制区域处理后通过所述接口区域输出;所述感应区域包括依序固定的绝缘层、走线层、基板层和保护层,所述走线层嵌入所述绝缘层与基板层之间,在所述基板层上与所述保护层接触的一面设置有传感器阵列,在所述基板层上设置有与所述传感器阵列对应的过孔,所述传感器阵列通过所述过孔与所述走线层的传感引线电路电连接。本发明成本较低、信噪比高、可靠性好,加工工艺简单。
Description
技术领域
本发明涉及一种半导体指纹识别传感器及其制造方法,属于指纹识别技术领域。
背景技术
目前,现有指纹识别传感器主要包括光学指纹识别传感器、声表面波指纹识别传感器和半导体指纹识别传感器等。
光学指纹识别传感器其原理主要是光学照相和反射的原理,其优点是抗静电能力强,产品成本低,使用寿命长,具有对光线依赖程度高、不能识别假手指,对干湿手指的适用性差等缺点。
声表面波指纹识别传感器具有体积大、功耗高等缺点。
半导体指纹传感器主要是利用电容、电感、温度、压力的原理实现指纹图像的采集。半导体指纹识别传感器以其识别率高(可识别假手指)、体积小和功耗低等优势正越来越被人们重视,成为最有前途的指纹识别传感器。但其缺点也是明显的:使用单晶硅作为Sensor(感应器)成本较高、信噪比低、可靠性差等。现有的半导体指纹传感器采用单晶硅基底制作传感单元,单晶硅基底以面积大小来计算价格,增加传感器面积使成本急剧上升。
发明内容
本发明要解决的技术问题是:提供一种低成本高可靠性的半导体指纹识别传感器及其制造方法。
为实现上述发明目的,本发明提供了一种半导体指纹识别传感器及其制造方法。
一方面,本发明提供一种半导体指纹识别传感器,包括:感应区域、控制区域和接口区域;
所述感应区域、所述控制区域和所述接口区域通信连接;
所述感应区域感应的指纹信息发送至所述控制区域,所述控制区域处理后通过所述接口区域输出;
所述感应区域包括依序固定的绝缘层、走线层、基板层和保护层,所述走线层嵌入所述绝缘层与基板层之间,在所述基板层上与所述保护层接触的一面设置有传感器阵列,在所述基板层上设置有与所述传感器阵列对应的过孔,所述传感器阵列通过所述过孔与所述走线层的传感引线电路电连接。
其中较优地,所述绝缘层采用柔性绝缘材料制成。
其中较优地,所述传感器阵列由高导电率材料制成。
其中较优地,所述保护层采用高介电常数高硬度材料制成。
其中较优地,所述控制区域包括依序固定的绝缘层、走线层和基板层,所述走线层嵌入所述绝缘层与基板层之间;
在所述基板层上远离绝缘层的一面设置有若干个焊点,若干个焊点组成焊盘,在所述基板层上设置有与焊点对应的焊盘过孔,所述焊点通过所述焊盘过孔与所述走线层的传感引线电路电连接。
其中较优地,所述控制区域焊接有指纹识别传感集成电路。
其中较优地,所述接口区域包括依序固定的绝缘层、走线层和基板层,所述走线层嵌入所述绝缘层与基板层之间,在所述基板层上远离绝缘层的一面设置有若干个接口触片,在所述基板层上设置有与接口触片对应的接口过孔,接口触片通过所述接口过孔与所述走线层的传感引线电路电连接。
其中较优地,所述半导体指纹识别传感器还设置有静电防护环,所述静电防护环环绕所述感应区域。
其中较优地,所述静电防护环上设计有缺口。
另一方面,本发明还提供一种制造上述半导体指纹识别传感器的方法,包括如下步骤:在柔性基板上制作半导体感应区域、控制区域和接口区域的步骤和在控制区域焊压指纹识别传感集成电路并检测的步骤;
柔性基板上制作体感应区域、所述控制区域和所述接口区域的步骤具体包括:
按尺寸裁切柔性基板;
在裁切好的柔性基板上钻通孔,在基板表面金属化处理使基板表面形成金属层,使通孔金属化形成过孔;
在金属层上压感光膜层,通过紫外线曝光、显影液显影和刻蚀液刻蚀及剥离后在形成走线层的传感引线电路;
在传感引线电路上涂覆绝缘层;
在基板远离走线层的表面清洗后电镀传感器阵列、集成电路焊盘和接口触片分别形成感应区域、控制区域和接口区域;
在柔性基板上表面沉积高硬度耐磨材料形成保护层;
控制区域焊压指纹识别传感集成电路并检测的步骤具体包括:
将集成电路焊压在控制区域上;
进行接触检查和电性能测试。
本发明提供的半导体指纹识别传感器及其制造方法,通过在柔性基板上面进行Sensor Pad的制作,大大降低了工艺成本。并利用类似Chip On Film的方式进行ICBonding,简化了制作工艺。由于柔性基板为金属走线,降低了信号损失,提高了信噪比。
附图说明
图1是本发明半导体指纹识别传感器结构示意图;
图2是本发明半导体指纹识别传感器剖面结构示意图。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
如图1所示,本发明提供一种半导体指纹识别传感器,其包括感应区域1、控制区域2和接口区域3;感应区域1、控制区域2和接口区域3通信连接;感应区域1感应的指纹信息发送至控制区域2,控制区域2处理后通过所述接口区域3输出。
如图2所示,所述感应区域1包括依序固定的绝缘层50、走线层60、基板层51和保护层80,所述走线层60嵌入所述绝缘层50与基板层51之间,在所述基板层51上与所述保护层80接触的一面设置有传感器阵列11,在所述基板层51上设置有与传感器阵列11对应的过孔10,所述传感器阵列11通过所述过孔10与所述走线层60的传感引线电路12电连接。下面对本半导体指纹识别传感器展开详细说明。
在本发明的一个实施例中,感应区域1的绝缘层50和基板层51采用柔性绝缘材料作为基板,该柔性材料优选采用聚酰亚胺或聚酯薄膜。保护层80采用Si3N4或特氟龙(聚四氟乙烯Polytetrafluoroethene,缩写PTFE)等高介电常数高硬度材料。高介电常数高硬度材料通过溅射、蒸镀等方式在基板层51上表面沉积形成保护层80。保护层80的厚度要小于5um。
保护层80优选采用Si3N4制作,由于Si3N4材料较高的介电常数和超薄的厚度使得手指与传感器阵列11接触时电容信号变化幅度不会过小。并且由于Si3N4具有很好的耐磨性提高了传感器的可靠性。
在感应区域1设置的传感器阵列11包括若干个半导体传感单元,若干个半导体传感单元采用N×N的方块形状的传感器阵列结构。为了保证识别精度,每英寸的半导体传感单元的数量要超过300个。传感器阵列11采用高导电率材料,例如铜和银,优选铜。传感器阵列11通过在基板层51上设置的过孔10和走线层60中设置的将传感器阵列11感测到的指纹信号引出到控制区域2。走线层60中各引线间避免交叉,尽量减小寄生电容。走线层60的各传感引线电路12均采用印刷电路,印刷电路材料优选银浆。
本发明的一个实施例中,如图2所示,所述控制区域2包括依序固定的绝缘层50、走线层60和基板层51,所述走线层60嵌入所述绝缘层50与基板层51之间,在所述基板层51上远离绝缘层50的一面设置有若干个焊点21,若干个焊点21组成焊盘。在所述基板层51上设置有与焊点21对应的焊盘过孔20,所述焊点21通过所述焊盘过孔20与所述走线层60的传感引线电路12电连接。控制区域2焊接有指纹识别传感集成电路22。在传感区域1采集来的指纹信息由控制区域3的指纹识别传感集成电路22识别处理成指纹图像传送至接口区域输出。感应区域1的传感器阵列11、走线层的各传感引线电路12和控制区域2的指纹识别传感集成电路22共同组成了指纹识别传感器电路。本发明的指纹识别传感器电路和原理与现有技术中的指纹识别传感器电路和原理相类似,在此就不再详细赘述了。
如图2所示,所述接口区域3包括依序固定的绝缘层50、走线层60和基板层51,所述走线层60嵌入所述绝缘层50与基板层51之间,在所述基板层51上远离绝缘层50的一面设置有若干个接口触片31,在所述基板层51上设置有与接口触片31对应的接口过孔30,接口触片31通过所述接口过孔10与所述走线层60的传感引线电路12电连接。
如图1和图2所示,感应区域1、控制区域2和接口区域3可以一体成型;感应区域1、控制区域2和接口区域3的绝缘层50、走线层60、基板层51可以分别采用相同材料制作。本法发明感应区域1、控制区域2和接口区域3一体成型共同组成FPC(柔性电路板,FlexiblePrinted Circuit board)。
如图1所示,本发明提供的半导体指纹识别传感器还设置有静电防护环(ESD,Electro-Static discharge)4,静电防护环4环绕感应区域1。为防止形成天线环路效应,静电防护环4采用分段设计,在静电防护环4上设计有缺口42。静电防护环主要采用铜、镍、银等金属导电材料,包裹整个传感器(Sensor)区域,最后与IC Bonding Pad(焊压接触面)相连。当IC Bonding好后,与IC内部接地线连接。当有静电发生时,能通过此金属导线将静点通过IC引出到地,从而释放静电,降低静电对传感器区域的破坏和影响。另外,如果此环为闭合回路,必将引起天线效应,影响传感器信号的探测。特此,采用了分段设计,增加了缺口42,此缺口的大小根据具体设计而定,参考值最小为30um。
本发明还提供一种加工上述半导体指纹识别传感器的制造方法,该方法具体包括如下步骤:首先对在柔性基板上制作半导体感应区域、所述控制区域和所述接口区域;其次,在控制区域焊压传感器集成电路并检测。下面对本半导体指纹识别传感器的制备方法展开详细说明。
首先,介绍在柔性基板上制作体感应区域、所述控制区域和所述接口区域的步骤。
将柔性基板裁切开料处理,具体地,将成卷的基板按照需要裁切成需要的尺寸。通过化学腐蚀或激光等方式在裁切好的柔性基板上钻通孔,通过化学镀或形成碳导电层电镀技术使该通孔金属化(这里的金属优选铜、银等高导电率材料)形成过孔,使基板一面形成金属层薄膜。化学或机械清洗金属层表面,使用感光膜层压在金属层上,通过紫外线曝光、显影液显影和刻蚀液刻蚀及剥离后在干膜上形成金属层的传感引线电路。在传感引线电路上涂覆聚酰亚胺等胶黏剂,使胶黏剂半固化后形成覆盖的绝缘层,通过热压使之与走线层衔接紧密,不留气泡。在基板远离走线层的表面清洗后电镀传感器阵列、集成电路焊盘(ICBonding Pad)和接口触片(又称接口金手指)分别形成感应区域、控制区域和接口区域。采用高介电常数高硬度耐磨材料通过溅射、蒸镀等方式在柔性基板上表面沉积形成保护层。该保护层的厚度要小于5um。
最后,介绍在控制区域焊压(Bonding)传感器集成电路并检测。
将大片的柔性传感器冲切成小片,并用补强板补强控制区域;清洗集成电路焊盘(Bonding Pad)后,涂覆ACF胶(导电胶,Anisotropic Conductive Film);然后通过预压(Pre-Bonding)和实压(Bonding)后将集成电路焊压(IC Bonding)在传感器上;最后进行接触检查(Lead Check)和电性能测试。
本发明提供的半导体指纹识别传感器的制备方法在柔性基板上面进行SensorPad的制作,大大降低了工艺成本。并将IC利用类似覆晶薄膜(COF,Chip On Film)的方式绑定在FPC上,简化了制作工艺,大大降低了工艺成本。
本发明提供的半导体指纹识别传感器和制作方法,通过在柔性基板上面进行传感器阵列的制作,相对于现有技术中普通半导体指纹传感器采用单晶硅基底制作传感单元,本发明采用了工艺成本较为廉价的柔性基板,提高了产品的价格竞争力。并利用类似覆晶薄膜的方式进行集成电路焊压,简化了制作工艺。由于柔性基板为金属走线(采用铜、银等高导电率金属),降低了信号损失,提高了信噪比。为了提高传感器的高可靠性,在表面覆盖有高介电常数的保护材料。本发明还设计了静电防护环来保证指纹信号不受干扰。
以上实施方式仅用于说明本发明,而并非对本发明的限制,有关技术领域的普通技术人员,在不脱离本发明的精神和范围的情况下,还可以做出各种变化和变型,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应由权利要求限定。
Claims (9)
1.一种半导体指纹识别传感器,其特征在于,包括感应区域、控制区域和接口区域;
所述感应区域、所述控制区域和所述接口区域通信连接;
所述感应区域感应的指纹信息发送至所述控制区域,所述控制区域处理后通过所述接口区域输出;
所述感应区域包括依序固定的绝缘层、走线层、基板层和保护层,所述走线层嵌入所述绝缘层与基板层之间,在所述基板层上与所述保护层接触的一面设置有传感器阵列,在所述基板层上设置有与所述传感器阵列对应的过孔,所述传感器阵列通过所述过孔与所述走线层的传感引线电路电连接;
所述控制区域包括依序固定的绝缘层、走线层和基板层,所述走线层嵌入所述绝缘层与基板层之间;
在所述基板层上远离绝缘层的一面设置有若干个焊点,若干个焊点组成焊盘,在所述基板层上设置有与焊点对应的焊盘过孔,所述焊点通过所述焊盘过孔与所述走线层的传感引线电路电连接。
2.如权利要求1所述的半导体指纹识别传感器,其特征在于,所述绝缘层和基板层采用柔性绝缘材料制成。
3.如权利要求1所述的半导体指纹识别传感器,其特征在于,所述传感器阵列由高导电率材料制成。
4.如权利要求1所述的半导体指纹识别传感器,其特征在于,所述保护层采用高介电常数高硬度材料制成。
5.如权利要求1所述的半导体指纹识别传感器,其特征在于,所述控制区域焊接有指纹识别传感集成电路。
6.如权利要求1所述的半导体指纹识别传感器,其特征在于,所述接口区域包括依序固定的绝缘层、走线层和基板层,所述走线层嵌入所述绝缘层与基板层之间,在所述基板层上远离绝缘层的一面设置有若干个接口触片,在所述基板层上设置有与接口触片对应的接口过孔,接口触片通过所述接口过孔与所述走线层的传感引线电路电连接。
7.如权利要求1-6任意一项所述的半导体指纹识别传感器,其特征在于,所述半导体指纹识别传感器还设置有静电防护环,所述静电防护环环绕所述感应区域。
8.如权利要求7所述的半导体指纹识别传感器,其特征在于,所述静电防护环上设计有缺口。
9.一种制造半导体指纹识别传感器的方法,其特征在于,在柔性基板上制作半导体感应区域、控制区域和接口区域,具体包括下列步骤:
按尺寸裁切柔性基板;
在裁切好的柔性基板上钻通孔,在基板表面金属化处理使基板表面形成金属层,使通孔金属化形成过孔;
在金属层上压感光膜层,通过紫外线曝光、显影液显影和刻蚀液刻蚀及剥离后在形成走线层的传感引线电路;
在传感引线电路上涂覆绝缘层;
在基板远离走线层的表面清洗后电镀传感器阵列、集成电路焊盘和接口触片分别形成感应区域、控制区域和接口区域;
在柔性基板上表面沉积高硬度耐磨材料形成保护层;
所述控制区域包括依序固定的绝缘层、走线层和基板层,所述走线层嵌入所述绝缘层与基板层之间;
在所述基板层上远离绝缘层的一面设置有若干个焊点,若干个焊点组成焊盘,在所述基板层上设置有与焊点对应的焊盘过孔,所述焊点通过所述焊盘过孔与所述走线层的传感引线电路电连接。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8144319B2 (en) | 2009-05-07 | 2012-03-27 | Solum, Inc. | Automated soil measurement device |
US9146223B1 (en) | 2012-08-03 | 2015-09-29 | Monsanto Technology Llc | Automated soil measurement device |
US9291545B1 (en) | 2012-09-06 | 2016-03-22 | Monsanto Technology Llc | Self-filling soil processing chamber with dynamic extractant volume |
CN104102902B (zh) | 2014-07-04 | 2017-07-04 | 京东方科技集团股份有限公司 | 一种半导体指纹识别传感器及其制造方法 |
CN105608406B (zh) * | 2014-11-20 | 2019-05-28 | 上海箩箕技术有限公司 | 指纹传感器 |
CN104553113A (zh) * | 2014-12-11 | 2015-04-29 | 业成光电(深圳)有限公司 | 声波式指纹识别组件及其制造方法 |
CN105893918A (zh) * | 2015-01-26 | 2016-08-24 | 胡家安 | 一种指纹检测装置及方法 |
CN104751126A (zh) * | 2015-03-06 | 2015-07-01 | 南昌欧菲生物识别技术有限公司 | 指纹识别装置、触摸屏及电子设备 |
CN104881628A (zh) * | 2015-03-06 | 2015-09-02 | 南昌欧菲生物识别技术有限公司 | 指纹识别装置、触摸屏及电子设备 |
CN104751124A (zh) * | 2015-03-06 | 2015-07-01 | 南昌欧菲生物识别技术有限公司 | 指纹识别装置、触摸屏及电子设备 |
TWI563253B (en) * | 2015-04-14 | 2016-12-21 | Lee Mei Yen | Composite substrate sensor device and method of manufacturing such sensor device |
CN106292865B (zh) * | 2015-06-24 | 2019-06-21 | 神盾股份有限公司 | 电子装置 |
CN106326807B (zh) * | 2015-06-24 | 2020-02-11 | 神盾股份有限公司 | 指纹感测器 |
CN106356348A (zh) * | 2015-07-24 | 2017-01-25 | 晨星半导体股份有限公司 | 电容式传感器结构、具电容式传感器的电路板结构以及电容式传感器的封装结构 |
CN106650552B (zh) * | 2015-10-30 | 2019-09-13 | 深圳指芯智能科技有限公司 | 一种指纹识别传感器用金属环及其制备方法和应用 |
CN106767628B (zh) * | 2015-12-18 | 2019-04-19 | 深圳市汇顶科技股份有限公司 | 一种指纹传感器保护层的厚度检测方法及系统 |
TWI584202B (zh) * | 2015-12-31 | 2017-05-21 | 速博思股份有限公司 | 指紋辨識裝置 |
US9792516B2 (en) | 2016-01-26 | 2017-10-17 | Next Biometrics Group Asa | Flexible card with fingerprint sensor |
TWI596716B (zh) * | 2016-06-27 | 2017-08-21 | 速博思股份有限公司 | 指紋辨識裝置 |
MY181171A (en) * | 2016-11-28 | 2020-12-21 | Carsem M Sdn Bhd | Low-profile electronic package |
US10055637B2 (en) * | 2016-12-07 | 2018-08-21 | Synaptics Incorporated | Optical sensor with substrate light filter |
CN108780772B (zh) * | 2017-02-13 | 2023-07-14 | 深圳市汇顶科技股份有限公司 | 硅通孔芯片的二次封装方法及其二次封装体 |
CN106980835B (zh) * | 2017-03-24 | 2018-08-17 | 维沃移动通信有限公司 | 一种指纹识别装置及电子设备 |
TWI718365B (zh) * | 2017-05-09 | 2021-02-11 | 漢辰科技股份有限公司 | 晶圓電荷監測 |
CN107564899A (zh) * | 2017-08-22 | 2018-01-09 | 苏州科阳光电科技有限公司 | 一种生物识别芯片的封装方法及生物识别模组 |
CN110739327B (zh) * | 2018-07-20 | 2022-06-07 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
CN112580389B (zh) * | 2019-09-27 | 2024-05-10 | 速博思股份有限公司 | 指纹侦测装置 |
CN111126351B (zh) * | 2020-01-21 | 2024-02-09 | 北京京东方光电科技有限公司 | 指纹识别模组 |
CN111987085B (zh) * | 2020-08-21 | 2022-08-05 | 上海天马微电子有限公司 | 一种传感器、传感器的制备方法及电子设备 |
US11816919B2 (en) | 2021-06-04 | 2023-11-14 | Synaptics Incorporated | Sensor device for transcapacitive sensing with shielding |
US11519801B1 (en) * | 2021-06-04 | 2022-12-06 | Synaptics Incorporated | Sensor device for transcapacitive sensing with shielding |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102138147A (zh) * | 2008-09-01 | 2011-07-27 | Idex公司 | 表面传感器 |
CN103294312A (zh) * | 2013-05-15 | 2013-09-11 | 京东方科技集团股份有限公司 | 电容式触摸屏、电容式触摸屏制备方法及显示装置 |
CN203366350U (zh) * | 2013-07-24 | 2013-12-25 | 江苏恒成高科信息科技有限公司 | 指纹读取传感器ic卡 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO315017B1 (no) * | 2000-06-09 | 2003-06-23 | Idex Asa | Sensorbrikke, s¶rlig for måling av strukturer i en fingeroverflate |
JP3806044B2 (ja) * | 2002-02-08 | 2006-08-09 | 日本電信電話株式会社 | 表面形状認識用センサおよびその製造方法 |
JP3684233B2 (ja) * | 2002-05-14 | 2005-08-17 | キヤノン株式会社 | 指紋入力装置及びその製造方法 |
CZ2005209A3 (cs) * | 2002-09-10 | 2005-12-14 | Ivi Smart Technologies, Inc. | Bezpečné biometrické ověření identity |
JP4160851B2 (ja) | 2003-03-31 | 2008-10-08 | 富士通株式会社 | 指紋認識用半導体装置 |
TWI224191B (en) * | 2003-05-28 | 2004-11-21 | Au Optronics Corp | Capacitive semiconductor pressure sensor |
US8716613B2 (en) | 2010-03-02 | 2014-05-06 | Synaptics Incoporated | Apparatus and method for electrostatic discharge protection |
US9851326B2 (en) * | 2012-11-22 | 2017-12-26 | UNIVERSITé LAVAL | Electrochemical sensor |
CN203232406U (zh) * | 2013-05-15 | 2013-10-09 | 京东方科技集团股份有限公司 | 电容式触摸屏及显示装置 |
CN104102902B (zh) | 2014-07-04 | 2017-07-04 | 京东方科技集团股份有限公司 | 一种半导体指纹识别传感器及其制造方法 |
-
2014
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- 2014-11-21 US US14/762,847 patent/US10242242B2/en active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102138147A (zh) * | 2008-09-01 | 2011-07-27 | Idex公司 | 表面传感器 |
CN103294312A (zh) * | 2013-05-15 | 2013-09-11 | 京东方科技集团股份有限公司 | 电容式触摸屏、电容式触摸屏制备方法及显示装置 |
CN203366350U (zh) * | 2013-07-24 | 2013-12-25 | 江苏恒成高科信息科技有限公司 | 指纹读取传感器ic卡 |
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