KR20030095195A - 리드 프레임과 그 제조 방법 및 반도체 장치 - Google Patents
리드 프레임과 그 제조 방법 및 반도체 장치 Download PDFInfo
- Publication number
- KR20030095195A KR20030095195A KR10-2003-0002939A KR20030002939A KR20030095195A KR 20030095195 A KR20030095195 A KR 20030095195A KR 20030002939 A KR20030002939 A KR 20030002939A KR 20030095195 A KR20030095195 A KR 20030095195A
- Authority
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- South Korea
- Prior art keywords
- copper oxide
- lead frame
- oxide layer
- layer
- semiconductor device
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000005751 Copper oxide Substances 0.000 claims abstract description 92
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 92
- 239000000463 material Substances 0.000 claims abstract description 32
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 28
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 238000007789 sealing Methods 0.000 claims abstract description 26
- 239000007800 oxidant agent Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 22
- 238000007747 plating Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 description 15
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- 239000010949 copper Substances 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000002845 discoloration Methods 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000008719 thickening Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- JZBWUTVDIDNCMW-UHFFFAOYSA-L dipotassium;oxido sulfate Chemical compound [K+].[K+].[O-]OS([O-])(=O)=O JZBWUTVDIDNCMW-UHFFFAOYSA-L 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Abstract
Description
Claims (8)
- 동합금(銅合金)으로 이루어지는 기재(基材)로 형성된 리드 프레임으로서,상기 기재의 표면에 최외(最外)층으로서 산화동층(酸化銅層)이 형성되고, 상기 산화동층은 침상(針狀) 결정 이외의 산화동으로 이루어지는 것을 특징으로 하는 리드 프레임.
- 제 1 항에 있어서,상기 산화동층은 강산화제의 용액과의 접촉으로 형성된 산화동으로 이루어지는 것을 특징으로 하는 리드 프레임.
- 제 1 항 또는 제 2 항에 있어서,상기 산화동층의 두께는 10∼1000옹스트롬인 것을 특징으로 하는 리드 프레임.
- 리드 프레임의 제조 방법으로서,동합금으로 이루어지는 기재(基材)를 소정의 형상으로 가공하고, 부분 도금 후,상기 기재를 강산화제의 용액에 침지하여 기재의 표면에 침상 결정 이외의 산화동층을 최외층으로서 형성하는 것을 특징으로 하는 리드 프레임의 제조 방법.
- 제 4 항에 있어서,상기 기재를 강산화제의 용액에 침지하는 시간을 조정하여, 상기 산화동층이 침상 결정화되기 전에 상기 기재를 강산화제의 용액 중에서 제거하는 것을 특징으로 하는 리드 프레임의 제조 방법.
- 동합금으로 이루어지는 기재(基材)의 표면에 침상 결정 이외의 산화동으로 이루어지는 산화동층이 최외층으로서 형성된 리드 프레임과,상기 리드 프레임의 소정의 부위에 탑재된 반도체 소자와,상기 반도체 소자를 밀봉하는 밀봉 수지를 갖는 것을 특징으로 하는 반도체 장치.
- 제 6 항에 있어서,상기 산화동층은 강산화제의 용액과의 접촉으로 형성된 산화동으로 이루어지는 것을 특징으로 하는 반도체 장치.
- 제 6 또는 제 7 항에 있어서,상기 산화동층의 두께는 10∼1000옹스트롬인 것을 특징으로 하는 반도체 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002166898A JP3566269B2 (ja) | 2002-06-07 | 2002-06-07 | リードフレーム及びその製造方法、及び半導体装置。 |
JPJP-P-2002-00166898 | 2002-06-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030095195A true KR20030095195A (ko) | 2003-12-18 |
KR100541581B1 KR100541581B1 (ko) | 2006-01-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030002939A KR100541581B1 (ko) | 2002-06-07 | 2003-01-16 | 리드 프레임과 그 제조 방법 및 반도체 장치 |
Country Status (4)
Country | Link |
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US (4) | US20030227073A1 (ko) |
JP (1) | JP3566269B2 (ko) |
KR (1) | KR100541581B1 (ko) |
TW (1) | TWI231019B (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3566269B2 (ja) * | 2002-06-07 | 2004-09-15 | 富士通株式会社 | リードフレーム及びその製造方法、及び半導体装置。 |
JP3883543B2 (ja) * | 2003-04-16 | 2007-02-21 | 新光電気工業株式会社 | 導体基材及び半導体装置 |
US7166543B2 (en) * | 2004-08-30 | 2007-01-23 | Micron Technology, Inc. | Methods for forming an enriched metal oxide surface for use in a semiconductor device |
JP2006108279A (ja) * | 2004-10-04 | 2006-04-20 | Matsushita Electric Ind Co Ltd | リードフレームとその製造方法 |
JP2013004778A (ja) | 2011-06-17 | 2013-01-07 | Toshiba Corp | 半導体記憶装置 |
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-
2002
- 2002-06-07 JP JP2002166898A patent/JP3566269B2/ja not_active Expired - Lifetime
-
2003
- 2003-01-06 US US10/336,716 patent/US20030227073A1/en not_active Abandoned
- 2003-01-09 TW TW092100434A patent/TWI231019B/zh not_active IP Right Cessation
- 2003-01-16 KR KR1020030002939A patent/KR100541581B1/ko active IP Right Grant
-
2010
- 2010-08-16 US US12/856,730 patent/US8940583B2/en not_active Expired - Lifetime
-
2012
- 2012-10-25 US US13/660,758 patent/US20130043577A1/en not_active Abandoned
- 2012-10-25 US US13/660,746 patent/US8664046B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US8664046B2 (en) | 2014-03-04 |
TW200308069A (en) | 2003-12-16 |
US20130043577A1 (en) | 2013-02-21 |
KR100541581B1 (ko) | 2006-01-11 |
US20100310781A1 (en) | 2010-12-09 |
JP3566269B2 (ja) | 2004-09-15 |
US8940583B2 (en) | 2015-01-27 |
JP2004014842A (ja) | 2004-01-15 |
US20130045329A1 (en) | 2013-02-21 |
TWI231019B (en) | 2005-04-11 |
US20030227073A1 (en) | 2003-12-11 |
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