KR20030043697A - 반도체 장치의 제조 방법 및 연마 장치 - Google Patents

반도체 장치의 제조 방법 및 연마 장치 Download PDF

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Publication number
KR20030043697A
KR20030043697A KR1020020073371A KR20020073371A KR20030043697A KR 20030043697 A KR20030043697 A KR 20030043697A KR 1020020073371 A KR1020020073371 A KR 1020020073371A KR 20020073371 A KR20020073371 A KR 20020073371A KR 20030043697 A KR20030043697 A KR 20030043697A
Authority
KR
South Korea
Prior art keywords
polishing
wafer
substrate
film
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020020073371A
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English (en)
Korean (ko)
Inventor
나까무라겐로
미야시따나오또
요다다까시
오꾸무라가쯔야
Original Assignee
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20030043697A publication Critical patent/KR20030043697A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/002—Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
    • B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
    • B24B21/06—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces involving members with limited contact area pressing the belt against the work, e.g. shoes sweeping across the whole area to be ground
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020020073371A 2001-11-26 2002-11-25 반도체 장치의 제조 방법 및 연마 장치 Ceased KR20030043697A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00359818 2001-11-26
JP2001359818A JP3949941B2 (ja) 2001-11-26 2001-11-26 半導体装置の製造方法および研磨装置

Publications (1)

Publication Number Publication Date
KR20030043697A true KR20030043697A (ko) 2003-06-02

Family

ID=19170752

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020073371A Ceased KR20030043697A (ko) 2001-11-26 2002-11-25 반도체 장치의 제조 방법 및 연마 장치

Country Status (5)

Country Link
US (2) US6933234B2 (enExample)
JP (1) JP3949941B2 (enExample)
KR (1) KR20030043697A (enExample)
CN (1) CN1222985C (enExample)
TW (1) TWI225273B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101450457B (zh) * 2007-12-03 2012-11-28 株式会社荏原制作所 抛光装置与抛光方法
KR20180069713A (ko) * 2016-12-15 2018-06-25 가부시키가이샤 에바라 세이사꾸쇼 연마 장치, 및 연마구를 압박하는 압박 패드
KR20220029464A (ko) * 2020-08-28 2022-03-08 가부시키가이샤 휴모 라보라토리 칩 전자 부품 검사용의 롤러 전극 접촉자를 구비한 장치
CN118305713A (zh) * 2024-06-07 2024-07-09 浙江求是半导体设备有限公司 一种抛光设备及方法

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JP4090247B2 (ja) * 2002-02-12 2008-05-28 株式会社荏原製作所 基板処理装置
JP4125148B2 (ja) 2003-02-03 2008-07-30 株式会社荏原製作所 基板処理装置
JP3534115B1 (ja) * 2003-04-02 2004-06-07 住友電気工業株式会社 エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法
US7682225B2 (en) 2004-02-25 2010-03-23 Ebara Corporation Polishing apparatus and substrate processing apparatus
JP4284215B2 (ja) * 2004-03-24 2009-06-24 株式会社東芝 基板処理方法
JP4116583B2 (ja) * 2004-03-24 2008-07-09 株式会社東芝 基板処理方法
US7273824B2 (en) * 2004-07-08 2007-09-25 United Microelectronics Corp. Semiconductor structure and fabrication therefor
TWI275451B (en) * 2005-01-11 2007-03-11 Asia Ic Mic Process Inc Measurement of thickness profile and elastic modulus profile of polishing pad
US7091542B1 (en) * 2005-01-28 2006-08-15 International Business Machines Corporation Method of forming a MIM capacitor for Cu BEOL application
US8124455B2 (en) * 2005-04-02 2012-02-28 Stats Chippac Ltd. Wafer strength reinforcement system for ultra thin wafer thinning
JP5196709B2 (ja) * 2005-04-19 2013-05-15 株式会社荏原製作所 半導体ウエハ周縁研磨装置及び方法
US20090017733A1 (en) * 2005-04-19 2009-01-15 Ebara Corporation Substrate processing apparatus
JP2007158023A (ja) * 2005-12-05 2007-06-21 Nec Electronics Corp 半導体ウェハの研磨装置及び半導体ウェハの研磨方法
US20070131653A1 (en) * 2005-12-09 2007-06-14 Ettinger Gary C Methods and apparatus for processing a substrate
US7993485B2 (en) * 2005-12-09 2011-08-09 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20070238393A1 (en) * 2006-03-30 2007-10-11 Shin Ho S Methods and apparatus for polishing an edge of a substrate
JP2008036783A (ja) 2006-08-08 2008-02-21 Sony Corp 研磨方法および研磨装置
JP5019203B2 (ja) * 2006-11-14 2012-09-05 株式会社東芝 半導体ウェハの研磨方法及び半導体ウェハの研磨装置
US20080207093A1 (en) * 2007-02-28 2008-08-28 Applied Materials, Inc. Methods and apparatus for cleaning a substrate edge using chemical and mechanical polishing
JP2008284683A (ja) * 2007-05-21 2008-11-27 Applied Materials Inc 基板の振動により基板のノッチを研磨する方法及び装置
JP2008306180A (ja) * 2007-05-21 2008-12-18 Applied Materials Inc 膜の基板斜面及び縁部の研磨プロファイルを制御する方法及び装置
JP2009004765A (ja) * 2007-05-21 2009-01-08 Applied Materials Inc 基板研磨のためにローリングバッキングパッドを使用する方法及び装置
US20080293333A1 (en) * 2007-05-21 2008-11-27 Applied Materials, Inc. Methods and apparatus for controlling the size of an edge exclusion zone of a substrate
US20080293344A1 (en) * 2007-05-21 2008-11-27 Applied Materials, Inc. Methods and apparatus for polishing a notch of a substrate using a polishing pad
JP2008306179A (ja) 2007-05-21 2008-12-18 Applied Materials Inc バッキングパッドを使用して基板の両面の縁部から膜及び薄片を除去する方法及び装置
JP2009018363A (ja) * 2007-07-11 2009-01-29 Ebara Corp 研磨装置
JP2008042220A (ja) * 2007-09-25 2008-02-21 Ebara Corp 基板処理方法及び装置
JP5536322B2 (ja) * 2007-10-09 2014-07-02 新光電気工業株式会社 基板の製造方法
JP2009119537A (ja) * 2007-11-12 2009-06-04 Toshiba Corp 基板処理方法及び基板処理装置
JP2009131920A (ja) * 2007-11-29 2009-06-18 Ebara Corp 研磨装置及び方法
US20090142916A1 (en) * 2007-11-29 2009-06-04 Qimonda Ag Apparatus and method of manufacturing an integrated circuit
JP5211835B2 (ja) * 2008-04-30 2013-06-12 ソニー株式会社 ウエハ研磨装置およびウエハ研磨方法
KR20110031296A (ko) * 2008-05-30 2011-03-25 쓰리엠 이노베이티브 프로퍼티즈 컴파니 현수식 광학 필름
JP5160993B2 (ja) * 2008-07-25 2013-03-13 株式会社荏原製作所 基板処理装置
JP5235555B2 (ja) * 2008-08-06 2013-07-10 中村留精密工業株式会社 基板の端面研磨装置
US20100105299A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Methods and apparatus for polishing an edge and/or notch of a substrate
US20100105291A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Methods and apparatus for polishing a notch of a substrate
DE102009011622B4 (de) * 2009-03-04 2018-10-25 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung einer epitaxierten Siliciumscheibe
CN102101257B (zh) * 2009-12-18 2014-09-24 中村留精密工业株式会社 基板的端面研磨装置
JP5663295B2 (ja) * 2010-01-15 2015-02-04 株式会社荏原製作所 研磨装置、研磨方法、研磨具を押圧する押圧部材
JP5819589B2 (ja) * 2010-03-10 2015-11-24 株式会社フジミインコーポレーテッド 研磨用組成物を用いた方法
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JP5649417B2 (ja) 2010-11-26 2015-01-07 株式会社荏原製作所 固定砥粒を有する研磨テープを用いた基板の研磨方法
JP5886602B2 (ja) * 2011-03-25 2016-03-16 株式会社荏原製作所 研磨装置および研磨方法
JP5798505B2 (ja) * 2011-04-27 2015-10-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN103107110B (zh) * 2011-11-10 2016-04-06 北大方正集团有限公司 一种芯片观察样品制作方法及系统
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JP2016058675A (ja) 2014-09-12 2016-04-21 株式会社東芝 研磨装置および半導体ウェハの研磨方法
JP6568006B2 (ja) * 2016-04-08 2019-08-28 株式会社荏原製作所 研磨装置および研磨方法
JP2018086690A (ja) * 2016-11-28 2018-06-07 株式会社荏原製作所 研磨フィルム、研磨方法、及び研磨フィルムの製造方法
JP2018098248A (ja) * 2016-12-08 2018-06-21 株式会社村田製作所 積層セラミック電子部品の製造方法
JP6828405B2 (ja) * 2016-12-08 2021-02-10 株式会社村田製作所 積層セラミック電子部品の製造方法
JP2018098247A (ja) * 2016-12-08 2018-06-21 株式会社村田製作所 積層セラミック電子部品の製造方法
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JP6920849B2 (ja) * 2017-03-27 2021-08-18 株式会社荏原製作所 基板処理方法および装置
JP6896476B2 (ja) * 2017-03-29 2021-06-30 株式会社東京精密 ウェーハ及びウェーハの薄化方法並びにウェーハの薄化装置
CN108857862B (zh) * 2018-06-12 2020-05-12 山东科芯电子有限公司 一种半导体硅晶圆研磨处理系统
KR102855980B1 (ko) 2020-04-09 2025-09-05 삼성전자주식회사 웨이퍼 트리밍 장치
JP7562994B2 (ja) * 2020-06-08 2024-10-08 株式会社Sumco ウェーハ外周部の研磨装置
TWI860793B (zh) * 2020-10-13 2024-11-01 南韓商未來股份有限公司 晶片加工方法、系統及裝置
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CN114260784A (zh) * 2021-12-24 2022-04-01 山东有研半导体材料有限公司 8英寸硅抛光片边缘t型轮廓加工用倒角磨削工装及方法
CN118061040B (zh) * 2024-04-17 2024-08-27 赣州市顺意门窗工程有限公司 一种铝合金门窗加工用磨边装置

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101450457B (zh) * 2007-12-03 2012-11-28 株式会社荏原制作所 抛光装置与抛光方法
KR20180069713A (ko) * 2016-12-15 2018-06-25 가부시키가이샤 에바라 세이사꾸쇼 연마 장치, 및 연마구를 압박하는 압박 패드
KR20220029464A (ko) * 2020-08-28 2022-03-08 가부시키가이샤 휴모 라보라토리 칩 전자 부품 검사용의 롤러 전극 접촉자를 구비한 장치
CN118305713A (zh) * 2024-06-07 2024-07-09 浙江求是半导体设备有限公司 一种抛光设备及方法

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US6933234B2 (en) 2005-08-23
TW200305210A (en) 2003-10-16
US7351131B2 (en) 2008-04-01
JP3949941B2 (ja) 2007-07-25
CN1222985C (zh) 2005-10-12
CN1421903A (zh) 2003-06-04
US20030139049A1 (en) 2003-07-24

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