KR20020070443A - 전도성 상호연결장치 - Google Patents
전도성 상호연결장치 Download PDFInfo
- Publication number
- KR20020070443A KR20020070443A KR1020027006699A KR20027006699A KR20020070443A KR 20020070443 A KR20020070443 A KR 20020070443A KR 1020027006699 A KR1020027006699 A KR 1020027006699A KR 20027006699 A KR20027006699 A KR 20027006699A KR 20020070443 A KR20020070443 A KR 20020070443A
- Authority
- KR
- South Korea
- Prior art keywords
- alloy
- copper
- silver
- metal alloy
- contained
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/02—Alloys based on copper with tin as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/425—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
- H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
- H10W20/4424—Copper alloys
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44902599A | 1999-11-24 | 1999-11-24 | |
| US09/449,025 | 1999-11-24 | ||
| PCT/US2000/031310 WO2001039250A2 (en) | 1999-11-24 | 2000-11-14 | Conductive interconnection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020070443A true KR20020070443A (ko) | 2002-09-09 |
Family
ID=23782571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020027006699A Ceased KR20020070443A (ko) | 1999-11-24 | 2000-11-14 | 전도성 상호연결장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US6797079B2 (https=) |
| EP (1) | EP1232525A2 (https=) |
| JP (1) | JP2003529206A (https=) |
| KR (1) | KR20020070443A (https=) |
| CN (1) | CN1425196A (https=) |
| AU (1) | AU1609501A (https=) |
| WO (1) | WO2001039250A2 (https=) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
| US20040072009A1 (en) * | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
| US7696092B2 (en) * | 2001-11-26 | 2010-04-13 | Globalfoundries Inc. | Method of using ternary copper alloy to obtain a low resistance and large grain size interconnect |
| US6703307B2 (en) | 2001-11-26 | 2004-03-09 | Advanced Micro Devices, Inc. | Method of implantation after copper seed deposition |
| US6835655B1 (en) | 2001-11-26 | 2004-12-28 | Advanced Micro Devices, Inc. | Method of implanting copper barrier material to improve electrical performance |
| US6703308B1 (en) | 2001-11-26 | 2004-03-09 | Advanced Micro Devices, Inc. | Method of inserting alloy elements to reduce copper diffusion and bulk diffusion |
| US6861349B1 (en) | 2002-05-15 | 2005-03-01 | Advanced Micro Devices, Inc. | Method of forming an adhesion layer with an element reactive with a barrier layer |
| JP4794802B2 (ja) | 2002-11-21 | 2011-10-19 | Jx日鉱日石金属株式会社 | 銅合金スパッタリングターゲット及び半導体素子配線 |
| CN100439558C (zh) * | 2003-03-17 | 2008-12-03 | 日矿金属株式会社 | 铜合金溅射靶、其制造方法以及半导体元件布线 |
| US7297247B2 (en) | 2003-05-06 | 2007-11-20 | Applied Materials, Inc. | Electroformed sputtering target |
| CN1839213A (zh) * | 2003-08-21 | 2006-09-27 | 霍尼韦尔国际公司 | 在三元混合物中包含铜的pvd靶和形成含铜pvd靶的方法 |
| US7169706B2 (en) * | 2003-10-16 | 2007-01-30 | Advanced Micro Devices, Inc. | Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition |
| JP4478038B2 (ja) | 2004-02-27 | 2010-06-09 | 株式会社半導体理工学研究センター | 半導体装置及びその製造方法 |
| US8038857B2 (en) * | 2004-03-09 | 2011-10-18 | Idemitsu Kosan Co., Ltd. | Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes |
| US20060071338A1 (en) * | 2004-09-30 | 2006-04-06 | International Business Machines Corporation | Homogeneous Copper Interconnects for BEOL |
| US20070068796A1 (en) * | 2005-09-26 | 2007-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of using a target having end of service life detection capability |
| US8795486B2 (en) * | 2005-09-26 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | PVD target with end of service life detection capability |
| US7891536B2 (en) * | 2005-09-26 | 2011-02-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target with end of service life detection capability |
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| US8790499B2 (en) | 2005-11-25 | 2014-07-29 | Applied Materials, Inc. | Process kit components for titanium sputtering chamber |
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| JP5234306B2 (ja) * | 2006-10-18 | 2013-07-10 | 三菱マテリアル株式会社 | 熱欠陥発生が少なくかつ表面状態の良好なtftトランジスターを用いたフラットパネルディスプレイ用配線および電極並びにそれらを形成するためのスパッタリングターゲット |
| US8791018B2 (en) * | 2006-12-19 | 2014-07-29 | Spansion Llc | Method of depositing copper using physical vapor deposition |
| US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
| US8591631B2 (en) * | 2007-07-31 | 2013-11-26 | General Electric Company | Method and apparatus to produce synthetic gas |
| US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
| US8500697B2 (en) * | 2007-10-19 | 2013-08-06 | Pressure Products Medical Supplies, Inc. | Transseptal guidewire |
| KR20090042556A (ko) * | 2007-10-26 | 2009-04-30 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
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| JP5491845B2 (ja) * | 2009-12-16 | 2014-05-14 | 株式会社Shカッパープロダクツ | スパッタリングターゲット材 |
| CN102011094B (zh) * | 2010-11-25 | 2012-07-25 | 福州阿石创光电子材料有限公司 | 一种光学蒸镀用材料的制备方法 |
| JP5590328B2 (ja) * | 2011-01-14 | 2014-09-17 | 三菱マテリアル株式会社 | 電気銅めっき用含リン銅アノードおよびそれを用いた電解銅めっき方法 |
| JP5626582B2 (ja) * | 2011-01-21 | 2014-11-19 | 三菱マテリアル株式会社 | 電気銅めっき用含リン銅アノードおよびそれを用いた電気銅めっき方法 |
| EP2915898B1 (en) * | 2013-03-01 | 2020-04-22 | JX Nippon Mining & Metals Corp. | High-purity copper-cobalt alloy sputtering target |
| JP5668123B2 (ja) * | 2013-11-01 | 2015-02-12 | 株式会社日立製作所 | 接合構造、電気接点 |
| JP5694503B2 (ja) * | 2013-12-27 | 2015-04-01 | Jx日鉱日石金属株式会社 | 自己拡散抑制機能を有するシード層及び自己拡散抑制機能を備えたシード層の形成方法 |
| CN105463246A (zh) * | 2015-12-02 | 2016-04-06 | 苏州龙腾万里化工科技有限公司 | 一种磨削机仪器零件用耐用合金 |
| CN105463244A (zh) * | 2015-12-15 | 2016-04-06 | 苏州华安矿业科技有限公司 | 矿用多孔喷头 |
| CN105364428A (zh) * | 2015-12-24 | 2016-03-02 | 常熟市欧迪管业有限公司 | 凝汽器用钛管 |
| CN105463239A (zh) * | 2015-12-28 | 2016-04-06 | 苏州众禹环境科技有限公司 | 工业用旋流分离机 |
| CN107475557A (zh) * | 2015-12-29 | 2017-12-15 | 刘雷 | 一种高导电率高韧性的铜合金电缆导线及其制备方法 |
| CN105463242A (zh) * | 2016-01-05 | 2016-04-06 | 刘操 | 一种高导电率高延展性的铜合金导线及其制备方法 |
| US10269714B2 (en) | 2016-09-06 | 2019-04-23 | International Business Machines Corporation | Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements |
| CN108085531A (zh) * | 2016-11-21 | 2018-05-29 | 宜兴市帝洲新能源科技有限公司 | 一种地暖设备的弯头材料 |
| CN107424664A (zh) * | 2017-03-22 | 2017-12-01 | 合肥浦尔菲电线科技有限公司 | 一种复合高导电率导线 |
| CN107316671A (zh) * | 2017-06-29 | 2017-11-03 | 合肥达户电线电缆科技有限公司 | 一种低电阻率电线及其制作工艺 |
| CN107739873B (zh) * | 2017-09-30 | 2019-02-12 | 重庆鸽牌电线电缆有限公司 | 调相机用含银铜排坯料配方 |
| CN107937878A (zh) * | 2017-11-13 | 2018-04-20 | 有研亿金新材料有限公司 | 一种铜银合金靶材的制备方法 |
| KR102872450B1 (ko) | 2018-12-13 | 2025-10-16 | 미쓰비시 마테리알 가부시키가이샤 | 순구리판 |
| CN114269957B (zh) * | 2019-09-27 | 2022-07-29 | 三菱综合材料株式会社 | 纯铜板 |
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-
2000
- 2000-11-14 CN CN00818631A patent/CN1425196A/zh active Pending
- 2000-11-14 KR KR1020027006699A patent/KR20020070443A/ko not_active Ceased
- 2000-11-14 JP JP2001540821A patent/JP2003529206A/ja not_active Withdrawn
- 2000-11-14 WO PCT/US2000/031310 patent/WO2001039250A2/en not_active Ceased
- 2000-11-14 EP EP00978655A patent/EP1232525A2/en not_active Withdrawn
- 2000-11-14 AU AU16095/01A patent/AU1609501A/en not_active Abandoned
-
2001
- 2001-02-14 US US09/783,835 patent/US6797079B2/en not_active Expired - Fee Related
- 2001-02-14 US US09/784,233 patent/US20020014289A1/en not_active Abandoned
- 2001-02-14 US US09/784,234 patent/US6758920B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6797079B2 (en) | 2004-09-28 |
| US20020014289A1 (en) | 2002-02-07 |
| EP1232525A2 (en) | 2002-08-21 |
| JP2003529206A (ja) | 2003-09-30 |
| US6758920B2 (en) | 2004-07-06 |
| WO2001039250A3 (en) | 2001-12-13 |
| WO2001039250A2 (en) | 2001-05-31 |
| CN1425196A (zh) | 2003-06-18 |
| AU1609501A (en) | 2001-06-04 |
| US20010035237A1 (en) | 2001-11-01 |
| US20010035238A1 (en) | 2001-11-01 |
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