KR20020024554A - 기판 처리 장치 및 기판 처리 방법 - Google Patents
기판 처리 장치 및 기판 처리 방법 Download PDFInfo
- Publication number
- KR20020024554A KR20020024554A KR1020010059109A KR20010059109A KR20020024554A KR 20020024554 A KR20020024554 A KR 20020024554A KR 1020010059109 A KR1020010059109 A KR 1020010059109A KR 20010059109 A KR20010059109 A KR 20010059109A KR 20020024554 A KR20020024554 A KR 20020024554A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- oxide film
- natural oxide
- wafer
- processing chamber
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
Description
Claims (6)
- 플라즈마 방전에 의해서 활성화된 가스가 피 활성 가스에 충돌되어 활성화되어서 이루어지는 자연 산화막 제거 가스가 가스 도입관을 통하여 처리실로 공급되어, 상기 처리실내의 기판의 자연 산화막이 제거되는 기판 처리 장치에 있어서, 상기 피 활성 가스는 상기 가스 도입관으로 공급되고, 또한 상기 가스 도입관을 흐르는 플라즈마 방전에 의해서 활성화된 가스의 흐름 방향에 대하여 직교하는 방향, 또는 대향하는 방향, 또는 직교하는 방향으로부터 대향하는 방향 사이의 방향으로 분출되는 것을 특징으로 하는기판 처리 장치.
- 제 1 항에 있어서,상기 플라즈마 방전에 의해서 활성화된 가스는 수소 가스와 질소 가스, 또는 암모니아 가스이고, 상기 피 활성 가스가 3불화질소가스인 것을 특징으로 하는기판 처리 장치.
- 제 1 항에 있어서,상기 자연 산화막 제거 가스를 분산시켜 상기 기판에 평행하게 유통시키는분산 수단을 포함하고 있는 것을 특징으로 하는기판 처리 장치.
- 제 3 항에 있어서,상기 분산 수단이 가스 분출구를 갖는 분산판에 의해서 구성되어 있는 것을 특징으로 하는기판 처리 장치.
- 복수 매의 기판을 처리하는 처리실과, 이 처리실로 활성화한 자연 산화막 제거 가스를 이 처리실의 외부로부터 공급하는 리모트 플라즈마 유닛과, 상기 자연 산화막 제거 가스를 분산시켜서 상기 복수 매의 기판에 평행하게 유통시키는 분산 수단을 포함하고 있는 것을 특징으로 하는기판 처리 장치.
- 제 5 항에 있어서,상기 분산 수단이 가스 분출구를 갖는 분산판에 의해서 구성되어 있는 것을 특징으로 하는기판 처리 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000290995 | 2000-09-25 | ||
JPJP-P-2000-00290995 | 2000-09-25 | ||
JP2001212216A JP3929261B2 (ja) | 2000-09-25 | 2001-07-12 | 基板処理装置および基板処理方法 |
JPJP-P-2001-00212216 | 2001-07-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020024554A true KR20020024554A (ko) | 2002-03-30 |
KR100644000B1 KR100644000B1 (ko) | 2006-11-10 |
Family
ID=26600679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010059109A KR100644000B1 (ko) | 2000-09-25 | 2001-09-24 | 기판 처리 장치 및 기판 처리 방법 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20020036066A1 (ko) |
JP (1) | JP3929261B2 (ko) |
KR (1) | KR100644000B1 (ko) |
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KR100316721B1 (ko) * | 2000-01-29 | 2001-12-12 | 윤종용 | 실리사이드막을 구비한 반도체소자의 제조방법 |
KR100366623B1 (ko) * | 2000-07-18 | 2003-01-09 | 삼성전자 주식회사 | 반도체 기판 또는 lcd 기판의 세정방법 |
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KR101025323B1 (ko) * | 2004-01-13 | 2011-03-29 | 가부시키가이샤 아루박 | 에칭 장치 및 에칭 방법 |
KR100908777B1 (ko) * | 2005-02-18 | 2009-07-22 | 도쿄엘렉트론가부시키가이샤 | 종형 뱃치 처리 장치 및 반도체 처리 시스템 |
US7815739B2 (en) | 2005-02-18 | 2010-10-19 | Tokyo Electron Limited | Vertical batch processing apparatus |
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US20020036066A1 (en) | 2002-03-28 |
US20070062646A1 (en) | 2007-03-22 |
JP2002170813A (ja) | 2002-06-14 |
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