TW518675B - Method and apparatus for processing substrates - Google Patents

Abstract

A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90 DEG to 180 DEG.

Description

518675 A7 Description (1) ^ — I. Field of the Invention The present invention relates to a substrate processing device, and more particularly relates to removing a natural oxide formed on a substrate to be processed during the manufacture of, for example, a semiconductor element. Membrane method and device. BACKGROUND OF THE INVENTION In the manufacture of semiconductor devices, a batch-type vertical thermal fireplace tube (hereinafter referred to as a heat treatment apparatus) is widely used on a silicon wafer (hereinafter referred to as a wafer) to perform processes such as film formation, tempering procedures, Heat treatment for oxide film formation process or diffusion process. If a wafer is exposed to the air while being transferred between processing stations of a semiconductor element manufacturing process, a natural oxide film is formed on a wafer due to oxygen in the air or a humidifier. The natural oxide film formed on the wafer is a silicon oxide film with incomplete crystallinity. Therefore, the film quality of the natural oxide film is inferior to that of an oxygen β silicon film formed by a controlled thermal oxidation process. Therefore, a semiconductor element manufactured using a wafer having a natural oxide film formed thereon exhibits many of the following adverse effects in its element characteristics: 0 Natural oxidation at a region of an insulating film of a capacitor on a wafer The presence of the physical film results in a reduced effective capacitance of the capacitor due to the increased distance between the electrodes of the capacitor and also due to the low dielectric contact of the natural oxide film. 2) If a gate oxide film is formed on a natural oxide film, the natural oxide oxidized by the oxygen in the ambient atmosphere contains a considerable amount of paper-sized paper towels_ 家 standard (⑽) Α 视 格 （ 2Similar to the public) (Please read the precautions on the back before filling out this page) • Order · 4 Caine :: In the case of no natural oxide film -_ Because of the pollutants contained in the natural oxide film During the heat treatment of the material, it will reach its material layer, so the electrical characteristics of the component can be reduced.

3) The presence of a natural oxide film at the contact area between the -upper wiring layer and -the lower wiring layer of a semiconductor element having a multilayer structure, the electrical contact resistance between the layers is increased. ) Forming an HSG (hemispherical granulated polycrystalline silicon) film on a circle to increase electrical contact. The formation of HSG film is hindered by the presence of a natural oxide film formed on the wafer. For the reasons described above, a natural film formed on a wafer is generally subjected to a desired heat treatment (hereinafter referred to as a main treatment) in a heat treatment device by using hydrogen fluoride (hereinafter referred to as HF). To clean the wafer and remove it ... And if the cleaned wafer is exposed to the air while being transferred to the heat treatment device, a natural oxide film with a plutonium atomic layer thickness is re-formed On a cleaned wafer. In addition, since it is required to reduce the thickness of the natural oxide film grown over time to a minimum, the time between the completion of the cleaning process and the start of the heat treatment process is limited, so the design freedom of the processing line is limited. Furthermore, since the 11 卩 cleaning process is a clear process, the small trenches of the scaled down semiconductor elements are not properly cleaned through the HF cleaning process. Therefore, there is already a need to develop a natural oxide film removal method using the dry etching principle. As far as one possible method of this kind, a natural oxide film removal method using remote plasma cleaning technology has been applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) for this paper size. 5. Description of the invention Cleaning is a technique used to remove the residual by-products attached to the process chamber by introducing activated radicals in the processing chamber which are installed in the second attachment of the processing chamber: No. 2: Cheng Denso. The use of remote plasma cleaning technology for natural oxide removal has its own disadvantages: if one uses dry etching of natural oxide film ^ natural oxide film removal gas is not properly activated, plasma damage will occur in the The oxide film occurs on the circle or cannot be selected, so that it cannot be removed;,; ,, ;; oxide film. In addition, when multiple wafers are processed at the same time to improve yield, if the natural oxide film When the uniformity of the removed gas is not maintained between the wafers and the respective circles, the natural oxide film will not be removed uniformly. Therefore, an object of the present invention is to provide a method capable of uniformly moving In addition to the natural oxide film formed on each substrate being processed, no plasma damage is caused thereon, but the yield can be improved. According to a preferred embodiment of the present invention, a substrate processing is provided. The device includes: a processing chamber and a gas supply line, wherein a natural oxide film removal gas is supplied to the processing chamber through the gas supply line to remove a natural oxide on a wafer, the natural oxidation The film removal gas system includes a first gas activated by a second gas activated by plasma discharge, and wherein the first gas and the second gas are supplied to the gas supply line along the first direction and the second direction, and the The angle range between the first and second directions This paper scale applies the Chinese national standard (0 ^) A4 specification (21 × 297 mm) 518675. 5. Description of the invention (4). About 90 ° to 180. According to this A preferred embodiment of the invention provides a substrate processing device, which includes: ~ a processing chamber in which a plurality of wafers are processed at the same time; and-a remote plasma unit, which is arranged outside the king chamber and used To The activated natural oxide film removal gas is supplied to the processing chamber; and a dispersing device is used to disperse the natural oxide removal gas to flow parallel to the wafer. A brief description of the formula J described above and other objects and features of the present invention It will be made clear by the following description of the preferred embodiment given along with the attached formula, the batch-type natural oxide of the π 訑 example, A Tuma according to the side of the film removal device of the present invention Cross-sectional views; Figures 2A to 2C illustrate a natural oxide film removal process; Figure 3 provides a side cross-sectional view of a single-wafer-type natural oxide according to a second embodiment of the present invention. 4A to 4C illustrate various positions of a gas supply line according to the present invention; FIG. 5 illustrates a side cross-sectional view of a batch-type natural oxide film removing device according to a third embodiment of the present invention; FIG. 6 provides The top cross-section view of the sky iron bomb ^ too ..., emulsion film removal device shown in Figure 5; the paper size is suitable for financial specifications (210 ^^^ 7 M8675

7A to 7C show various types of distribution boards according to the present invention; FIG. 8 provides a side cross-sectional view of a batch-type natural oxide film removing device according to a fourth embodiment of the present invention; A cross-sectional view of a batch-type natural oxide film removing device according to a further embodiment of the present invention; a detailed description of the light embodiment A preferred embodiment of the present invention will now be described in detail with reference to the accompanying drawings. Referring to FIG. 1, a substrate processing apparatus is illustrated according to a first embodiment of the present invention, which is to remove a natural oxide formed on a surface of a semiconductor wafer by using a remote electropolymerization cleaning technique. Membrane natural oxide film removal device. As shown in FIG. 1, the natural oxide film removing device is configured to perform a batch process, and a plurality of semiconductor wafers in # are simultaneously subjected to a natural oxide film removing process. As shown in FIG. 1, the natural oxide film removal device 10 that performs a batch process (hereinafter referred to as a batch natural oxide film removal device) includes a program tube in which a processing chamber 12 is formed. The natural oxide film removal process is performed in the plus chamber 12. The procedure is a single upright cylinder made of quartz and closed at both ends. The program tube is placed vertically so that its axis is perpendicular to the ground. The bottom end of the program tube 11 has a turntable 13 rotatably disposed thereon to hold the wafer boat 15. The turntable 13 is concentric with the bottom end and is rotated by a rotary actuator 14 provided at a lower surface of one of the bottom ends outside the program tube n. This paper size applies the Chinese National Standard (Οβ) Α4 specification (210x297 mm)

) 1 75 75, description of the invention (/ As shown in Figure 1, the wafer boat 15 is set on the turntable 13 in order to accommodate a plurality of wafers therein, wherein the turntable 13 and the wafer boat 15-the same rotation. The boat 15 has an upper and a lower plate 16, 17 and a supporting rod 18 (three supporting rods in this embodiment) arranged vertically between the upper and lower plates. The supporting rod 18 has a plurality of vertical The wafer mounting groove portion 19 is arranged, so that the wafer to be dried to the right can be horizontally fixed with a certain groove therebetween by the groove portion 19. The lower plate of the wafer boat 15 is movably fixed on the turntable 13 On one of the upper surfaces. The wafer 1 is formed in the processing cavity through a wafer transfer device (not shown) in such a manner that the wafer 1 is horizontally and vertically inserted into the wafer mounting groove portion 19. A wafer transfer opening (not shown) at a side wall portion of the chamber 12 is transferred to the program tube n. As shown in FIG. 1, a discharge port 20 is connected in such a manner that the discharge port 20 communicates with the processing chamber. To the side wall of the program tube, wherein the height of the discharge port 20 is about the same as that of the program tube u. The discharge port 2 It is connected to an exhaust pipe 21 for evacuating the program tube 11. A gas supply port 22 is connected to a part relative to the discharge port 20 in such a manner that such a gas supply port 22 communicates with the processing chamber 12, in which the gas The supply port 22 is approximately the same height as the program tube u. One end of the gas supply line is connected to the middle portion of the gas supply port 22 in such a manner that the gas supply line 23 can horizontally supply gas into the processing chamber 12. The other end of the gas supply line 23 is connected to a plasma chamber 25 in which a plasma 24 is formed. A plasma generator 26 is installed on the outer side of the plasma chamber to generate a plasma therein. 24. Plasma generator 26 can be any known type including inductive coupling type, such as inductively coupled plasma (Icp) generating paper size applicable to Chinese National Standard (CNS) A4 specification (21 × 297 mm)- ----------------------- Install -------------------- Order ------- ----------- Line. (Please read the precautions on the back before filling out this page) V. Description of the invention (7) Installation, capacitive coupling plasma (ccp) generating device, electronic cyclotron ECR type plasma generating device and micro surface wave plasma generating device. A hydrogen (hereinafter referred to as H2 gas) supply source 27 and a nitrogen (hereinafter & gas) supply source 28 are connected to the electricity The plasma chamber 25 is used to supply H2 and krypton gas to the plasma chamber. The NA gas can also be used alone or with ^ and / or krypton gas. The plasma chamber 25 is connected to the gas supply port. In the gas supply line 23 of 22, one end portion of the etching gas input line is inserted, and the other end portion thereof is connected to a NF3 gas supply source 30 for supplying NFs gas to be activated. The insertion end portion of the etching gas input line 29 (hereinafter referred to as the NF3 gas input line) is L-shaped, so that an NFS gas injection hole 29a at the end of a kNF3 gas input line 29 is along the gas supply line 23 One of the axes faces the plasma chamber 25 so as to inject the gas toward the plasma chamber 25. On the outside of the program tube 11, a heater unit (not shown) including, for example, a bulb heater for heating the processing chamber 12 is used so that it does not communicate with the wafer transfer opening, the exhaust port 20, and the gas supply port 22 Interfering way. The operation of the batch-type natural oxide film removing device having the above structure will now be exemplified. Referring to FIGS. 2A to 2C, it is assumed that, for example, one layer of the insulating layer 6 of the wafer 1 is provided with a contact hole 2, and a natural oxide film 3 exists on the bottom surface of the contact hole 2. As shown in FIG. 1, a plurality of such wafers 1 having a natural oxide film 3 thereon are loaded in a wafer boat 15 by a wafer transfer device in order to remove natural oxygen. This paper is compliant with Chinese National Standards (CNS) A4 specification (210X297 mm) 10 _ 518675 V. Description of the invention (8 compound film. The wafer transfer opening is then closed air-tightly by a gate valve (not shown). Thereafter, the processing chamber 12 is evacuated through the discharge line 21 And the rotary table 13 of the fixed wafer boat 15 is rotated by the rotary actuator 14. A plasma 24 is driven by the plasma generator 26 in the plasma chamber 25 to be fed from the H2 gas and N2 gas supply sources 2 7 and 28. H 2 gas and krypton gas (hereinafter referred to as a mixed gas 31) supplied to the electric chamber 28 are generated. Active gas species 32 are generated from the mixed gas 31 supplied to the plasma chamber 25 by plasma discharge. In addition, the NF3 gas blown from the NF3 gas injection hole 29a of the NF3 gas input line is supplied through the gas supply line 23 toward the plasma chamber 25. Then, the NF3 gas is mixed with the active gas type 32 and activated by the active gas type 32 One includes activated NF3 gas, mixed gas 3 丨 and active The natural oxide film removal gas 34 of the gas type 32 flows into the processing chamber 12 through the gas supply port 22. The natural oxide film removal gas 34 introduced into the processing chamber 12 is uniformly distributed across the processing chamber 12 To diffuse to react with the natural oxide film 3 on the wafer ′, thereby forming a reaction film 4 (hereinafter, a surface treatment layer) containing Si, N, ytterbium, and F, as shown in FIG. 2B. Since the wafer boat 15 of the fixed wafer 1 is rotated by the turntable 13 during the above-mentioned processing steps, the natural oxide film removal gas 34 can uniformly contact the surface before the wafer 1. It is necessary to pass through the formation of the surface treatment film 4 After a predetermined period of time, the supply of Η2, N2, and NF3 gases from their corresponding gas sources 27, 28, and 30 is stopped, and the plasma generator 26 also stops its operation. In addition, the remaining in the processing chamber 12 The gas is discharged through the discharge line 21. After the predetermined time period required for emptying the processing chamber 12, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ------- ----------------- Equipped-(Please read the first Note: Please fill in this page again.), Order |: line 丨 11, the processing chamber 12 is heated by the heater unit to a predetermined temperature, for example, 100 ° C, so that the surface treatment film 4 is sublimated, as shown in FIG. 2C. Therefore, the natural oxide film 3 on the circle 1 is removed, and the Si surface 5 is exposed. The mechanism applied to the natural oxide film removal procedure is as follows: First, 'including Η, A Reacts with the natural oxide film removal gas and natural oxide film (Si02) of NF3 gas and its active gas, and then forms a surface treatment film 4, that is, a polymer including Si, N, ytterbium, and F. Then, the polymer is sublimed at a temperature of 100 t or higher. After a predetermined time period required for sublimating the surface treatment film, the heater unit stops heating, and the remaining gas in the processing chamber is evacuated through the exhaust line 21. After a predetermined time period required to evacuate the remaining gas, the wafer 1 is unloaded from the wafer boat 15 and is transferred by the wafer transfer device to the wafer carrier through the wafer transfer opening opened by the gate valve (regardless of Show) on. The above process steps are repeated to process a plurality of wafers in a batch-type oxide film removing device 10. The inventors of the present invention have discovered that plasma damage can occur on the wafer, or if NF3 gas, which is very helpful for the natural oxide removal process, is directly supplied to the processing chamber 12 without passing through the gas supply line 23, In addition, when the NF3 gas is mixed with and activated by the active gas 32 of the mixed gas 31 in the processing chamber 21, the desired etching selectivity of the active gas cannot be obtained. However, 'because the NF3 gas 33 is introduced into the plasma chamber 25 and activated by the active-ground after the introduction of the gas supply line 23 and the plasma chamber 25 according to the preferred embodiment of the present invention, the electricity-avoidance of this paper scale Applicable to China National Standard (CNS) A4 specification (210X297 public love) _ 518675 'V. Description of the invention (i〇) Free and the desired etching selectivity can be obtained. In other words, since the gas 33 is supplied to the plasma chamber 25 and the supply line 23 and thereafter indirectly activated by the active gas species 32, the natural oxide removal gas 34 can be introduced at a controlled decomposition rate of the NF3 gas 33 In the processing chamber 12, plasma damage on the wafer can be avoided, and a desired etching selectivity can be achieved. As shown in FIG. 1, the degree of the decomposition reaction of the NI? 3 gas 33 can be controlled in a wide range by changing the distance l between the NF3 gas input line 292NF3 gas injection hole 29a and the plasma chamber 25 . For example, by reducing the distance L, the amount of NF3 gas entering the plasma chamber 252 is reduced, so that the degree of decomposition or activation of the NF3 gas is increased. Conversely, by increasing the distance L, the amount of NF3 gas entering the plasma chamber 25 is reduced, so that the degree of decomposition or activation of the NF; gas is reduced. Preferably, the distance L is determined by experimental methods such as experiments or computer simulations by considering several conditions such as #estimated volume of the natural oxide film to be removed and those that have not been removed. The relationship between the area of the Si02 film, the mixed gas 31 or NF, the supply amount of the gas 3 3, and the like. -According to the first preferred embodiment of the present invention, the following effects can be obtained. • 1) Because the selectivity between the natural oxide film and Shi Xi can be controlled by controlling the degree of NF3 gas decomposition rate, which is very helpful for the removal of natural oxide film, so natural oxidation The film can be completely removed. For example, the natural oxide film can be removed at a inversion rate of 3 A / min or more. 2) By controlling the degree of decomposition rate of NF3 gas, for example, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applied to the wafer and process paper standards. Invention description (11) Plasma damage on the sequence tube and wafer boat Can be avoided. 3) Because the degree of NF3 gas decomposition rate can be controlled in a wide range by changing the distance l between the NF3 gas injection hole of the nf3 gas input line and the plasma chamber, the natural oxide film is Can be completely removed under the processing conditions. 4) By supplying the natural oxide film removal gas parallel to the main surface of the wafer loaded in the wafer boat, the natural oxide film removal gas can be evenly distributed across the main surface of the aa circle, This allows the natural oxide film to be removed uniformly. 5) By using a turntable to rotate the wafer boat fixed on the wafer, the natural oxide film removal gas can evenly contact the front surface of the wafer, so that the natural oxide film can be removed uniformly. 6) For example, by removing the natural oxide film formed after the pre-cleaning process and depositing a CVD film, the reaction of the natural oxide film on the CVD film can be completely avoided, so that the performance and reliability of the CVD device can be It is improved, and in addition, the quality, reliability, and yield of a semiconductor element manufactured by a CVD apparatus can also be improved. Referring to Fig. 3, there is shown a cross-sectional view of a single-crystal-type natural oxide film removing device according to a second embodiment of the present invention. This embodiment is different from the previous embodiment in that this embodiment does not use a wafer boat for processing wafers. In other words, the natural oxide film removing device 10A according to the second preferred embodiment includes a program tube 11A formed of a short upright conical structure to form a low-height processing chamber 12A. A wafer holder 15A instead of the wafer boat holding two wafers j is set on a turntable 13A. Reference numeral 35 denotes a heater unit formed by a lamp 518675 A7 B7 V. Description of the invention (l2). This embodiment has the same effect as the first embodiment. In other words, by blowing the NF3 gas 33 to the plasma chamber 25 through the gas supply line 23, the NF3 gas can be activated by the active gas species 32 of the mixed gas 31 in the gas supply line 23 and the plasma chamber 25, so that Plasma damage can be prevented from occurring on wafer 1 and the desired etch selectivity can be obtained. In addition, it should be obvious to those skilled in the art that the present invention is not > shown in the preferred embodiment and can be modified in various ways without departing from the scope of the present invention. For example, the NF3 gas input line may be inserted into the gas supply line 23 as shown in FIGS. 4A to 4C. Referring to FIG. 4A, there is shown a NF3 gas input line 29A, which is inserted along the axis of the gas supply line 23 at the end thereof connected to the processing chamber 12. The test results obtained by using the NF3 gas pipeline structure shown in Fig. 4A will now be described in terms of the distance L and the etching rate. In the experiment, the microwave power in the plasma generator 26 was 1800W, the flow rate of H2 gas was 400 cc / min, the flow rate of N2 gas was 300 cc / min, and the flow rate of NF3 gas was 1000 cc / mi η. The pressure in the chamber 12 is 120 Pa, and the temperature of the crystal 0 is equal to or lower than 4 ° C. When the distance L between the injection hole of the NF3 gas input line 29A and the plasma chamber 25 is 205 mm, At 227 mm and 268 mm, the corresponding engraving rates are 3.3 A / min, 2.5 A / min, and 1.7 A / min. Through this experiment, it has been found that a sufficient etching rate can be obtained and the etching rate can be changed by changing the distance. L is controlled. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). ----------- Line (Please read the precautions on the back before filling out this page) 5. Description of the invention (l3) Refer to Figure 4B. 'The NF3 gas input line 29B is shown, which is tilted The angle is inserted in the gas supply line 23. In this embodiment, by changing the tilt angle, the activation or decomposition process of the NF3 gas can be appropriately controlled in a wide range Referring to FIG. 4C, _Nf3 gas input line 29C is shown, which is connected to the gas supply line 23, and its axis is perpendicular to the axis of the gas supply line 23. In this embodiment, N] p3 gas input line 29C It does not protrude into the gas supply line 23. The experimental results obtained by using the structure shown in Fig. 4C under the same processing conditions as shown in Fig. 4A show that the remainder rate when the distance L is 210 mm 0.3 A / min. However, when the injection hole of the NF3 gas input line 29C directly faces the processing chamber 12, etching is difficult to occur. This is caused by a short activation time, that is, the NF3 gas is easily vented, Therefore, it is impossible to stay with the & gas and & gas activated gas type 32 for a period of time that is long enough for the father to exchange sufficient energy. It should be understood by δ that the substrate to be processed can be a photomask or a printed circuit substrate , LCD panel, compact disk, magnetic disk or wafer. CIF3, CF4, CJ6 or other halogen gas can replace nf3 gas as the last name gas. According to the above-mentioned preferred embodiment, while avoiding the above plasma damage, day The oxide film can be completely removed. The third preferred embodiment of the present invention will now be described in detail with reference to FIGS. 5 and 6. Referring to FIGS. 5 and 6, the side and The upper paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm). 5. Description of the invention (M cross section). The natural oxide film removal device of Thunder 3 $ Ershi_ by using the remote cleaning method to The natural oxide film formed on the wafer is removed. The structure is set as shown in Figs. 5 and 6 'and a batch process is performed, in which a plurality of wafers are simultaneously subjected to a natural oxide film removal process. As shown in Figures 5 and 6, the batch-type natural oxide film removal device 40 includes a process for forming a processing chamber 42 therein, in which the natural oxygen film removal process is performed. The program tube 41 is a hexahedral box shape which is hermetically sealed to maintain a vacuum inside, and is vertically installed in such a manner that its center line is perpendicular to the ground. The program tube 41 includes a bottom wall having a boat loading / unloading opening 143. The boat loading / unloading opening is opened and closed by a sealed top cover. The sealed top cover can be moved vertically away from the program tube, and moves vertically toward the private sequence officer 41. reduce. Below the fork top cover 44, a rotary actuator is “installed” and / or the rotor is inserted in the processing chamber 42 through the fork top cover 44. A turntable > 46 is horizontally provided on one of the rotors. The upper end i is rotated by the & and the rotor. As shown in FIG. 5 'a wafer boat 47 for holding a plurality of wafers 1 is installed σ and transferred to $ 46, so that the wafer boat 47 and the turntable 46 can rotate uniformly. The wafer boat 47 is made of ceramic such as quartz, aluminum, or aluminum nitride (A1N) to avoid metal contamination such as wafer 1. The wafer boat 47 includes an upper plate 47a, a lower plate 47b, and A plurality of rubber rods 47c (two in this embodiment) are provided in the plural followers. The branch rod 47c has a plurality of vertically-arranged wafer mounting groove portions 47d 'so that a plurality of wafers 1 can be received by the groove portions 47. (1 is based on a fixed paper size that applies the Chinese National Standard (CNS) A4 specification (21〇 乂 297) |) ---------------------- --Install ------------ …… 、 Yes ……………… Fate (Please read the notes on the back before filling this page) 17 518675 A7 B7 5 2. Description of the invention (15) The gap is fixed horizontally therebetween. The lower plate 47b of the boat 47 is movably fixed on one of the upper surfaces of the turntable 46. As shown in Figs. 5 and 6, a discharge port 50 is connected in such a manner that the discharge port 20 communicates with the processing chamber 42. To the side wall of a part of the program tube 41, wherein the height of the discharge port 50 is about the same as that of the program tube 41. A gas supply 52 is connected to the discharge port in such a way that such a gas supply 珲 52 communicates with the processing chamber 42. On a part of the side wall of the program tube 41 of 50, the height of the supply port 52 is approximately the same as the height of the program tube 41. One end port of the gas supply line 53 is such that the gas supply line 53 can supply gas to the processing chamber horizontally The method in step 2 is connected to the middle part of the gas supply port 52. The other end of the gas supply line 53 is connected to a remote plasma unit 55, which activates NF3 gas by using high-frequency electric waves or the like. A dispersing plate 57 for removing the gas 54 by dispersing the natural oxide film is disposed parallel to the wafer 1 and is provided at the end of the gas supply port 52 facing the program tube 41. An upstream of the dispersing plate 57 is for dispersing the natural Oxide film migration The buffer portion 56 of the airflow except the gas 54 is provided by the dispersion plate 57. As shown in FIG. 7A, the dispersion plate 57 has a vertical slot forming a gas injection opening 58 so that the natural oxide film removal gas can pass through these openings Instead, it is dispersed vertically and can be vertically introduced into the processing chamber 42. The dispersion plate 57 is provided in such a manner that the distance L between the dispersion plate 57 and the adjacent periphery of the wafer 1 is specialized or less than 50 mm. The dispersion plate 57 is used not only to form the buffer portion 56 but also to control the energy of ions or radicals. In addition, the conductive plate 59 is installed at the discharge port 50 facing the processing chamber 42. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) Please read first, read-; Back: ^ «of; Note '· 意' things; items: again; fill in: m pages: order

518675 A7 B7 5. At the end portion of the description of the invention (16), the processing chamber 42 is emptied uniformly across its height. The conductive plate 59 is provided with a gas discharge opening 59a which extends a slit vertically. The distance between the conductive plate 59 and the adjacent periphery of the wafer 1 loaded in the wafer boat 47 is set to be equal to or less than 50 mm. The operation of the batch-type natural oxide film removing device 40 will now be explained. A plurality of wafers 1 requiring a natural oxide film removal process are loaded into a wafer boat 47 outside the processing chamber 42 by a wafer transfer device (not shown) to hold the crystals of wafer 1 The boat 47 is transferred to the processing chamber 42 through the boat loading / unloading opening 43. As shown in Figs. 5 and 6, the processing chamber 42 is air-tightly closed by a sealing cap 44 and is evacuated through an exhaust line 51. The turntable of the fixed wafer boat 47 is rotated by the rotary actuator 45. Then, the natural oxide film removing gas 54 including the activated NF3 gas is introduced into the gas supply port 52 from the remote plasma unit 55. The natural oxide film removal gas 54 introduced into the gas supply port 52 is uniformly dispersed throughout the volume of the buffer > portion 56 and flows uniformly across its height through a gas injection opening 58 formed by a vertical slot. Into the processing chamber 42. The gas flow of the natural oxide film removal gas 54 is dispersed, and its ion and radical energy is controlled to be reduced by the dispersion plate 57. In addition, the conductive plate 59 evenly distributes the discharge force of the discharge line 51 along its height, so that the natural oxide film removal gas 54 can be more uniformly dispersed in the processing chamber 42. The natural oxide film removal gas 54 introduced into the processing chamber 42 contacts the wafer 1 loaded in the wafer boat 47, and reacts with the natural oxide film and removes the natural oxide film with a better etching selectivity. At this time, because the size of the natural oxygen paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) ------------- -------- 、 Can ------.------------ Line · (Please read the precautions on the back before filling in this page) A7

---------! I V. Description of the invention (17) '---- The compound film removal gas 54 is distributed in a halved manner in the processing chamber 42 by the dispersion plate, so regardless of the wafer position, That is, in the height of the crystal boat 47, the crystal an in the loaded crystal boat 47 can be in contact with the natural oxide film removal gas: In addition, 'because the crystal loaded in the crystal boat 47 is turned by the turntable. Rotating 46, the natural oxide film removing gas 54 is also distributed uniformly across the entire surface of each wafer. Therefore, even when the wafer is placed on a wafer boat on another wafer boat, the natural oxide film of the wafer 1 can be completely and uniformly removed. In addition, because the natural oxide film removal gas 54 ion and atomic group energy activated by the remote electrolysis unit 55 is controlled and reduced by the dispersing plate 57, plasma damage can be avoided, and the silk can obtain the desired selectivity. If the inner side wall of the processing chamber is circular, the natural oxide film removing gas 54 will flow along the inner side wall. Therefore, it is preferable that the inner frame is configured to be concentric with the wafer, and the gap between the inner side wall and the periphery of the wafer is small. However, the reduced gap between the inner sidewall and the wafer requires a high accuracy of the boat setting. In this embodiment, the distance between the periphery of the wafer and the dispersion plate 57 and the distance between the periphery of the wafer 1 and the conductive plate 59 are set to be equal to or less than 50 mm. Therefore, even if the inner side wall of the processing chamber 42 is not formed into a circle, and the distance between the inner side wall and the periphery of the wafer is not small, the natural oxide film removal gas 54 can effectively flow and can be supplied to the crystal The central part of circle 1. Therefore, a reduction in the etching rate of the natural oxide film can be avoided, and at the same time, the etching uniformity can be improved. In addition, because a small gap is not required between the internal sidewall and the wafer, high wafer boat setting accuracy is not required. This paper size applies the Chinese national standard A4 specification (21 × 297). 518675-V. Description of the invention (18) After a predetermined period of time after the natural oxide film is removed, the natural oxidation from the remote plasma unit 55 The supply of the material film removing gas 54 and the rotation of the turntable 46 are stopped. Further, the gas remaining in the processing chamber 42 is evacuated through the exhaust line 51.

After a predetermined period of time to evacuate the remaining gas, the wafer boat containing the processing wafer 1 is removed from the processing chamber 42 by lowering the sealing cap 44. The processed wafer 1 is unloaded from the wafer boat 47 by a wafer transfer device. The processing steps described above are repeated in batches to process wafers to be processed by the batch natural oxide film removal device. According to the above embodiment, the following effects can be obtained. 1) Because the natural oxide film removal gas is uniformly dispersed in the processing chamber 42 by the dispersing plate, the wafer mounted in the wafer boat can be uniformly contacted with the natural oxide film removal gas, regardless of whether it is in the wafer boat Middle position

degree. Therefore, even when the wafer is set in a wafer boat on another wafer, the natural oxide film of the wafer can be completely and uniformly removed. That is, a natural oxide film formed on a plurality of wafers in a wafer boat can be removed at a time, so that the yield is higher than that of a single wafer type natural oxide film removing device. " 2) The natural oxide film removal gas activated in the remote plasma unit is reduced by the dispersion plate control. Therefore, even when the natural oxide film removal gas is in contact with the wafer, the plasma damage can be avoided, and the selective etching can be made, so that the natural oxide film can be sufficiently removed. 3) Because the energy of the ions and radicals of the gas removed by the natural oxide film can be set by the distance between the diffuser plate and the periphery of the wafer within 50 mm, 518675 A7 B7 V. Description of the invention (l9) Please read the note on the back first Matter refilling ϋ The reader's page is controlled, so the etch selectivity between the natural oxide film and the silicon exceeds 8. Therefore, the natural oxide film can be completely removed. For example, natural oxide films can be removed at a rate of 3 A / min. 4) The distances between the periphery of the wafer and the dispersion plate 57 and between the periphery of the wafer and the conductive plate are set to be equal to or less than 50 mm, even if the inner side walls of the processing chamber are not grouped into a circle and are inside The gap between the sidewall and the periphery of the wafer is not small, and the natural oxide film removal gas can flow sufficiently. Intercepted, the reduction in the removal rate of the natural oxide film removal gas can be avoided, and its removal uniformity can be increased. Order 5) By supplying the natural oxide film removal gas parallel to the main surface of the wafer mounted on the wafer boat, the natural oxide film removal gas can be evenly dispersed across the main surface of the wafer, This allows the natural oxide film to be removed uniformly. _ · 6) By using a turntable to rotate the wafer boat containing the wafer therein, the natural oxide film removal gas can evenly contact the front surface of the wafer, so that the natural oxide film can be removed uniformly. 7) For example, by depositing a CVD film after removing the natural oxide film formed after the pre-cleaning process, the reaction of the natural oxide film on the CVD film can be completely avoided, making the performance and reliability of the CVD device It can be improved, and in addition, the quality, reliability, and yield of semiconductor devices manufactured by the CVD apparatus can be improved. By supplying the natural oxide film removal gas in a flow direction parallel to the front surface of the wafer, the natural oxide film removal gas can be evenly contacted with the front surface of the wafer, making the Tianben paper size applicable to Chinese national standards (CNS ) Α4 specification (210X297 mm) 518675 A7 B7 5. Invention description (20) Of course, the oxide film can be removed evenly. In addition, for those skilled in the art, Xian Fei J is easy to understand that the present invention is not limited to the above preferred embodiments, but various modifications can be made without departing from the scope of the present invention. For example, the dispersing plate 57A shown in FIG. 7B having a plurality of gas injection openings 58A made of circular holes is used to replace the dispersing plate 57 shown in FIG. 7A. groove. In addition, the number of the dispersion plates is not limited to one. For example, two parallel dispersion plates 5 7 A can be used, as shown in Fig. 7C. It is also possible to install two or more dispersion plates with different structures, for example, a dispersion plate 57 having a gas injection opening 58 with a vertically extending slot, and a gas injection opening 5 8 A with a plurality of holes 5 7 A. It is also possible to install two or more dispersing plates which are not arranged in parallel. As described above, by changing the shape and size of the dispersed gas injection opening, and the number of installed dispersion plates, the installation interval and its angle, the oxide film removes the gas and the energy of ions and radicals. The dispersion can be appropriately controlled, so the etching selectivity and removal uniformity of the natural oxide film removal gas can be fully controlled. In addition, as shown in FIG. 8, the gas supply line 53 may be installed to extend vertically into the processing chamber 42, wherein a plurality of gas injection openings 5 8 B may be inserted along the processing chamber 42 A gas supply line 53 is formed. Since the natural oxide film removal gas is uniformly supplied between the wafers contained in the wafer boat 47, and also comes into uniform contact with the entire surface of each wafer, it is the same as described in the preferred embodiment The role of this paper in this case applies to China National Standard (CNS) A4 specifications (210X297)

------------------------ Install—— (Please read the precautions on the back before filling in this page). 、 Order—: Line 丨 23 518675 A7 _______ B7_ ^ 5. The description of the invention (21) can also be obtained.

Because the HSG film is not sufficiently formed on a wafer having a natural oxide film thereon, the natural oxide film must be removed before the HSG layer is formed. However, once the wafer processed by the natural oxide film removal process is exposed to the outside air, the HSG film cannot be fully formed, even if the wafer is subjected to HSG film formation in a substrate processing apparatus such as a CVD apparatus After the procedure. Although the reason why the HSG film was not formed is not clearly shown, it is presumed that the by-products were attached to the wafer when the natural oxide film was removed, and then reacted with the elements fixed in the outside air. This hinders the formation of HSG films. It is therefore preferred that the by-products are sublimated before they react with elements in the outside air. Referring to FIG. 9, there is shown a batch-type natural oxide film removing device 40A according to another embodiment of the present invention, which is capable of sublimating the sub-products in the processing chamber 42 before the by-products react with elements in the outside air. product. The device 40A of the preferred embodiment is different from the device 40 shown in FIG. 6 in that the lamp heater 60 is configured to heat the heating processing chamber 42 through the irradiation window 6 丨. In this preferred embodiment, the processing chamber 42 is heated to 80 ° C or higher by the light bulb heater 60 through the irradiation window 61 made of quartz glass, and is After the oxide film removal gas 54 removes the natural oxide film, the by-products attached to the wafer 1 are sublimated. It was found that the HSG film was sufficiently formed during the HSG formation procedure followed by the foregoing heat treatment. The crystal | round natural oxide film removal surface can be further stabilized by performing a hydrogenation process. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 518675 V. Description of the invention (22 In addition, 'should be noted', such as resistance heaters or similar types of heaters can also be used Take the bubble heater. In the preferred embodiment described above, the by-products have been described when they are removed from the heated processing chamber. However, as long as the by-products are removed before they are exposed to the outside air , The HSG film formation process can be achieved 'so the natural oxide film removal process and by-product removal process need not be performed in a single chamber. In other words, the heater unit can be installed without and without heating The processing chambers of the unit are connected to different heat treatment chambers. In this case, the natural oxide film is first removed in the processing chamber and then transferred to the heat treatment chamber in a vacuum or inert gas atmosphere, In order to remove by-products in it. It should be obvious to those familiar with this that the above-mentioned dispersion plates with respect to Figs. 5 to 8 can also be used in accordance with the descriptions in Figs. 1 and 3. In the first and second preferred embodiments, it is also clear that the present invention can be applied to a heat-treated photomask, a printed circuit board or a liquid crystal panel, a compact disk, and a magnetic disk. Although the present invention has been based on the preferred embodiment Displayed and explained, those skilled in the art will understand that various changes and modifications will be made without departing from the scope of the invention as defined by the following patent application scope. Please read the precautions on the back before writing the stupid page The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) 25 518675 A7 B7 V. Description of the invention (23) Component reference table 1 Wafer 2 Contact hole 3 Natural oxide film 4 Surface treatment film 5 Si Surface 6 Insulation layer 10 Natural oxide film removal device 11 Program tube 10A Natural oxide film removal device 11A Program tube 12 Processing chamber 12A Processing chamber 13 Turntable 13A Turntable 14 Rotary actuator 15 Wafer 15A Crystal Round bracket 16 Upper plate 17 Lower plate 18 Support rod 19 Recessed portion 20 Discharge 璋 21 Exhaust pipe 22 Gas supply port, 23 Gas supply line 2 4 Plasma 25 Plasma chamber 26 Plasma generator 27 H2 gas supply source 28 N2 gas supply source 29 Last gas input line 29a nf3 gas injection hole 29A NF3 gas input line 29B NF3 gas input line 29C NF3 gas input line 30 nf3 gas supply source 31 mixed gas 32 active gas 33 nf3 gas 34 natural oxygen film removal gas 35 heater unit 40 batch type natural oxygen film removal device 40A batch type natural oxide film removal device 41 program The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) 518675 A7 B7 V. Description of the invention (24)

42 Processing chamber 43 44 Sealing top 45 46 Turntable 47 47a Upper plate 47b 47c Support rod 47d 50 Drain port 52 53 Gas supply line 55 54 Natural oxide film removal gas 56 57 Dispersion plate 57A 58 Gas injection opening 58A 58B Gas injection opening 59 59a Gas discharge opening 60 61 Irradiation window wafer boat loading / unloading opening Rotary actuator wafer boat bottom plate groove part gas supply 璋 Remote electrical unit buffer part dispersion plate gas injection opening Conductor plate lamp heater paper Standards apply to Chinese National Standard (CNS) A4 (210X297 mm) 27

Claims (1)

518675 A8 B8 C8 --- D8 VI. Patent Application Fanyuan1 · A substrate processing device includes: a processing chamber and a gas screen pipeline, one of which includes a second gas activation activated by plasma discharge The natural oxide film removal gas of the first gas is supplied to the processing chamber through the gas supply line to remove the natural oxide on a wafer, and wherein the first gas and the second gas are along A first direction and a second direction are supplied to the gas supply line, and an angle between the first direction and the second direction ranges from about 90. To 18 o. . 2. The device according to item 1 of the patent application scope, wherein the first gas is a ^^ gas, and the second gas includes hydrogen and nitrogen, ammonia, or a mixture thereof. 3. The device according to item 1 of the patent application scope includes a dispersing device for dispersing the natural oxide film removing gas to flow in parallel with the wafer. 4. The device according to item 3 of the scope of patent application, wherein the dispersing device comprises one or more dispersing plates, each of which has at least one gas injection opening π 05. A substrate processing device, comprising a processing cavity Chamber, in which a plurality of wafers are processed at the same time; a remote plasma unit is disposed outside the processing chamber to supply an activated natural oxide film removal gas to the processing chamber; and a dispersion The device is used to disperse the natural oxide film and remove the gas. This paper scale applies the Chinese National Standard (CNS) A4 specification (210X297 cm) -28- 518675 A8 B8 C8 D8 The scope of patent application is parallel to the wafer flow. —6. The device according to item 5 of the patent application scope, wherein the dispersing device comprises one or more dispersing plates, each of which has at least one gas injection opening. This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm). ------ Line (Please read the precautions on the back before filling this page) 29