KR20020019045A - 실리콘 웨이퍼 및 에스오아이 웨이퍼의 제조방법, 그리고그 에스오아이 웨이퍼 - Google Patents
실리콘 웨이퍼 및 에스오아이 웨이퍼의 제조방법, 그리고그 에스오아이 웨이퍼 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 74
- 239000010703 silicon Substances 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 238000005498 polishing Methods 0.000 claims abstract description 117
- 238000000034 method Methods 0.000 claims abstract description 95
- 230000002093 peripheral effect Effects 0.000 claims abstract description 46
- 235000012431 wafers Nutrition 0.000 claims description 363
- 230000008569 process Effects 0.000 claims description 56
- 239000010408 film Substances 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 34
- 238000000227 grinding Methods 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- -1 hydrogen ions Chemical class 0.000 claims description 10
- 238000005304 joining Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 90
- 239000002585 base Substances 0.000 description 47
- 238000005468 ion implantation Methods 0.000 description 17
- 238000005530 etching Methods 0.000 description 15
- 239000004744 fabric Substances 0.000 description 15
- 239000012298 atmosphere Substances 0.000 description 14
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000005336 cracking Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002649 leather substitute Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (13)
- 실리콘 웨이퍼의 표면측의 모따기 폭을 X1로 하고, 이면측의 모따기 폭을 X2로 할 때, X1<X2인 모따기부를 보유하는 실리콘 웨이퍼를 준비하고, 상기 실리콘 웨이퍼의 표면을 경면연마한 후, 표면측의 모따기 폭이 X3(X3> X1)이 되도록 모따기 가공하는 것을 특징으로 하는 실리콘 웨이퍼의 제조방법.
- 실리콘 웨이퍼의 표면측의 모따기 폭을 X1로 하고, 이면측의 모따기 폭을 X2로 할 때, X1<X2인 모따기부를 보유하는 실리콘 웨이퍼를 2장 준비하고, 양 웨이퍼의 표면을 경면연마한 후, 산화막을 개재하여 밀착시킨 상태로 열처리를 가하여 한쪽의 웨이퍼를 소정 두께까지 두께를 줄여서 접합 SOI 웨이퍼를 제작한 후, 상기 SOI 웨이퍼의 SOI층측 표면의 모따기 폭이 X3(X3> X1)이 되도록 모따기 가공하는 것을 특징으로 하는 접합 SOI 웨이퍼의 제조방법.
- 실리콘 웨이퍼의 표면측의 모따기 폭을 X1로 하고, 이면측의 모따기 폭을 X2로 할 때, X1<X2인 모따기부를 보유하는 실리콘 웨이퍼를 2장 준비하고, 양 웨이퍼의 표면을 경면연마한 후, 한쪽 웨이퍼(본드웨이퍼)의 표면에 수소이온 또는 희가스이온 중 하나 이상을 주입하여 내부에 미소기포층(주입층)을 형성하고, 산화막을 개재하여 다른쪽의 웨이퍼(베이스웨이퍼)와 밀착시킨 상태로 열처리를 가하여 상기 미소기포층에서 본드웨이퍼를 박막형상으로 박리하여 접합 SOI 웨이퍼를 제작한후, 상기 SOI 웨이퍼의 SOI층측의 표면의 모따기 폭이 X3(X3> X1)이 되도록 모따기 가공하는 것을 특징으로 하는 접합 SOI 웨이퍼의 제조방법.
- 실리콘 웨이퍼의 표면측의 모따기 폭을 X1로 하고, 이면측의 모따기 폭을 X2로 할 때, X1<X2인 모따기부를 보유하는 실리콘 웨이퍼를 2장 준비하고, 양 웨이퍼의 표면을 경면연마한 후, 산화막을 개재하여 밀착시킨 상태로 열처리를 가하여 한쪽의 웨이퍼를 소정 두께까지 두께를 줄여서 접합 SOI 웨이퍼를 제작한 후, 상기 SOI 웨이퍼의 적어도 SOI층측 표면의 모따기부를 경면모따기 가공하는 것을 특징으로 하는 접합 SOI 웨이퍼의 제조방법.
- 실리콘 웨이퍼의 표면측의 모따기 폭을 X1로 하고, 이면측의 모따기 폭을 X2로 할 때, X1<X2인 모따기부를 보유하는 실리콘 웨이퍼를 2장 준비하고, 양 웨이퍼의 표면을 경면연마한 후, 한쪽 웨이퍼(본드웨이퍼)의 표면에 수소이온 또는 희가스이온 중 하나 이상을 주입하여 내부에 미소기포층(주입층)을 형성하고, 산화막을 개재하여 다른쪽의 웨이퍼(베이스웨이퍼)와 밀착시킨 상태로 열처리를 가하여 상기 미소기포층에서 본드웨이퍼를 박막형상으로 박리하여 접합 SOI 웨이퍼를 제작한 후, 상기 SOI 웨이퍼의 적어도 SOI층측 표면의 모따기부를 경면모따기 가공하는 것을 특징으로 하는 접합 SOI 웨이퍼의 제조방법.
- 제4항 또는 제5항에 있어서, 상기 경면모따기가공을 행하기 전에, 상기 SOI웨이퍼의 SOI층측 표면의 모따기부를 테이프연마 또는 연연삭가공에 의해서 처리하는 것을 특징으로 하는 접합 SOI 웨이퍼의 제조방법.
- 제2항 내지 제6항 중 어느 한 항에 기재된 제조방법으로 제작된 것을 특징으로 하는 외주 제거영역이 없는 접합 SOI 웨이퍼.
- 실리콘 웨이퍼의 표면측의 모따기 폭을 X1로 하고, 이면측의 모따기 폭을 X2로 할 때, X1<X2인 모따기부를 보유하는 실리콘 웨이퍼를 2장 준비하고, 양 웨이퍼의 표면을 경면연마한 후, 직접 밀착시킨 상태로 열처리를 가하여 한쪽의 웨이퍼를 소정 두께까지 두께를 줄여서 접합 웨이퍼를 제작한 후, 상기 접합 웨이퍼의 적어도 두께를 줄인 층측 표면의 모따기 폭이 X3(X3> X1)이 되도록 모따기 가공하는 것을 특징으로 하는 접합 웨이퍼의 제조방법.
- 실리콘 웨이퍼의 표면측의 모따기 폭을 X1로 하고, 이면측의 모따기 폭을 X2로 할 때, X1<X2인 모따기부를 보유하는 실리콘 웨이퍼를 2장 준비하고, 양 웨이퍼의 표면을 경면연마한 후, 한쪽 웨이퍼(본드웨이퍼)의 표면에 수소이온 또는 희가스이온 중 하나 이상을 주입하여 내부에 미소기포층(주입층)을 형성하고, 직접 다른쪽의 웨이퍼(베이스웨이퍼)와 밀착시킨 상태로 열처리를 가하여 상기 미소기포층에서 본드웨이퍼를 박막형상으로 박리하여 접합 웨이퍼를 제작한 후, 상기 접합 웨이퍼의 적어도 본드웨이퍼측 표면의 모따기 폭이 X3(X3>X1)이 되도록 모따기 가공하는 것을 특징으로 하는 접합 웨이퍼의 제조방법.
- 실리콘 웨이퍼의 표면측의 모따기 폭을 X1로 하고, 이면측의 모따기 폭을 X2로 할 때, X1<X2인 모따기부를 보유하는 실리콘 웨이퍼를 2장 준비하고, 양 웨이퍼의 표면을 경면연마한 후, 직접 밀착시킨 상태로 열처리를 가하여 한쪽의 웨이퍼를 소정 두께까지 두께를 줄여서 접합 웨이퍼를 제작한 후, 상기 접합 웨이퍼의 적어도 두께를 줄인 층측 표면의 모따기부를 경면모따기 가공하는 것을 특징으로 하는 접합 웨이퍼의 제조방법.
- 실리콘 웨이퍼의 표면측의 모따기 폭을 X1로 하고, 이면측의 모따기 폭을 X2로 할 때, X1<X2인 모따기부를 보유하는 실리콘 웨이퍼를 2장 준비하고, 양 웨이퍼의 표면을 경면연마한 후, 한쪽 웨이퍼(본드웨이퍼)의 표면에 수소이온 또는 희가스이온 중 하나 이상을 주입하여 내부에 미소기포층(주입층)을 형성하고, 직접 다른쪽의 웨이퍼(베이스웨이퍼)와 밀착시킨 상태로 열처리를 가하여 상기 미소기포층에서 본드웨이퍼를 박막형상으로 박리하여 접합 웨이퍼를 제작한 후, 상기 접합 웨이퍼의 적어도 본드웨이퍼측의 표면의 모따기부를 경면모따기 가공하는 것을 특징으로 하는 접합 웨이퍼의 제조방법.
- 제10항 또는 제11항에 있어서, 상기 경면모따기가공을 행하기 전에, 상기 접합 웨이퍼의 두께를 줄인 층측 또는 본드웨이퍼측 표면의 모따기부를 테이프연마또는 연연삭가공에 의해서 처리하는 것을 특징으로 하는 접합 웨이퍼의 제조방법.
- 제8항 내지 제12항 중 어느 한 항에 기재된 제조방법으로 제작된 것을 특징으로 하는 외주 제거영역이 없는 접합 웨이퍼.
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- 2001-03-27 EP EP01915811.2A patent/EP1189266B1/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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TW509990B (en) | 2002-11-11 |
EP1189266A1 (en) | 2002-03-20 |
EP1189266B1 (en) | 2017-04-05 |
WO2001073831A1 (fr) | 2001-10-04 |
EP1189266A4 (en) | 2004-06-30 |
KR100789205B1 (ko) | 2007-12-31 |
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