KR20010101881A - 접합 웨이퍼의 제조방법 - Google Patents
접합 웨이퍼의 제조방법 Download PDFInfo
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- KR20010101881A KR20010101881A KR1020017009616A KR20017009616A KR20010101881A KR 20010101881 A KR20010101881 A KR 20010101881A KR 1020017009616 A KR1020017009616 A KR 1020017009616A KR 20017009616 A KR20017009616 A KR 20017009616A KR 20010101881 A KR20010101881 A KR 20010101881A
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- South Korea
- Prior art keywords
- wafer
- ion implantation
- bonded
- silicon
- oxide film
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title abstract description 48
- 238000005468 ion implantation Methods 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 26
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 33
- 238000005498 polishing Methods 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- -1 hydrogen ions Chemical class 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 20
- 239000011800 void material Substances 0.000 abstract description 11
- 239000002245 particle Substances 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 4
- 239000005416 organic matter Substances 0.000 abstract description 4
- 238000005304 joining Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 103
- 238000004140 cleaning Methods 0.000 description 22
- 239000010410 layer Substances 0.000 description 17
- 230000003746 surface roughness Effects 0.000 description 7
- 239000002585 base Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000004299 exfoliation Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
실시예 1 | 실시예 2 | 실시예 3 | |
사용 웨이퍼 | 직경 200㎜, 두께 725㎛, 결정축 방위<100>, 도전형 p형,저항율 10∼20Ω·㎝의 한쪽의 표면이 경면연마된 단결정실리콘웨이퍼 각 40매(본드, 베이스 각 20매씩) | ||
제작플로우 | 도 1의 (A) | 도 1의 (B) | 도 1의 (B) |
공정(b)의 산화막두께 | 400㎚ | 400㎚ | 400㎚ |
공정(c)H+이온주입조건 | 40keV8×1016atoms/㎠ | 80keV8×1016atoms/㎠ | 80keV8×1016atoms/㎠ |
본드웨이퍼 표면처리조건 | CMP연마값 100㎚ | CMP연마값 100㎚ | 유기물 제저세정 +SC-1+SC-2 |
박리열처리 | 질소가스 분위기하 500℃, 30분 | ||
결합열처리 | 질소가스 분위기하 1100℃, 2시간 | ||
터치폴리시 | 연마값 100㎚ | ||
보이드 관찰결과 | 0개/웨이퍼 : 17매1개/웨이퍼 : 2매2개/웨이퍼 : 1매 | 0개/웨이퍼 : 16매1개/웨이퍼 : 3매2개/웨이퍼 : 1매 | 0개/웨이퍼 : 10매1개/웨이퍼 : 6매2개/웨이퍼 : 3매3개/웨이퍼 : 1매 |
보이드 프리율 | 85% | 80% | 50% |
Claims (4)
- 제1웨이퍼(1)의 표면으로부터 수소이온 또는 희가스이온 중 어느 하나 또는 둘다를 주입하여 상기 제1웨이퍼 내부에 미소 기포층(주입층)을 형성하는 공정(c)과, 상기 이온을 주입한 제1웨이퍼 표면에 부착되어 있는 불순물을 물리적으로 제거하는 공정(d)과, 상기 불순물 제거공정를 행한 제1웨이퍼의 표면과 제2웨이퍼(2)의 표면을 밀착시킨 상태로 열처리를 가함으로써, 상기 미소 기포층으로 제1웨이퍼를 박막형상으로 박리하는 공정(f)을 보유하는 것을 특징으로 하는 접합 웨이퍼의 제조방법.
- 제1항에 있어서, 상기 불순물을 물리적으로 제거하는 공정으로서, 화학적 기계연마 또는 CMP를 행하는 것을 특징으로 하는 접합 웨이퍼의 제조방법.
- 제1항 또는 제2항에 있어서, 상기 제1웨이퍼는 실리콘웨이퍼이고, 상기 실리콘웨이퍼에 이온주입을 하기 전에, 실리콘웨이퍼의 표면에 미리 실리콘 산화막(3)을 형성해 두는 것을 특징으로 하는 접합 웨이퍼의 제조방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 제2웨이퍼는 실리콘웨이퍼이고, 상기 실리콘웨이퍼에 있어서의 상기 제1웨이퍼와의 밀착면에, 미리 실리콘 산화막(3)을 형성해 두는 것을 특징으로 하는 접합 웨이퍼의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP36840099 | 1999-12-24 | ||
JPJP-P-1999-00368400 | 1999-12-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010101881A true KR20010101881A (ko) | 2001-11-15 |
KR100796249B1 KR100796249B1 (ko) | 2008-01-21 |
Family
ID=18491724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020017009616A KR100796249B1 (ko) | 1999-12-24 | 2000-12-18 | 접합 웨이퍼의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6566233B2 (ko) |
EP (1) | EP1187216B1 (ko) |
KR (1) | KR100796249B1 (ko) |
TW (1) | TW511141B (ko) |
WO (1) | WO2001048825A1 (ko) |
Families Citing this family (42)
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KR100741541B1 (ko) * | 2000-05-30 | 2007-07-20 | 신에쯔 한도타이 가부시키가이샤 | 접합웨이퍼의 제조방법 및 접합웨이퍼 |
US7501303B2 (en) * | 2001-11-05 | 2009-03-10 | The Trustees Of Boston University | Reflective layer buried in silicon and method of fabrication |
JPWO2003049189A1 (ja) * | 2001-12-04 | 2005-04-21 | 信越半導体株式会社 | 貼り合わせウェーハおよび貼り合わせウェーハの製造方法 |
FR2835097B1 (fr) * | 2002-01-23 | 2005-10-14 | Procede optimise de report d'une couche mince de carbure de silicium sur un substrat d'accueil | |
US6864176B2 (en) * | 2002-05-28 | 2005-03-08 | Asia Pacific Microsystems, Inc. | Fabrication process for bonded wafer precision layer thickness control and its non-destructive measurement method |
KR100511656B1 (ko) * | 2002-08-10 | 2005-09-07 | 주식회사 실트론 | 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼 |
JP4407127B2 (ja) * | 2003-01-10 | 2010-02-03 | 信越半導体株式会社 | Soiウエーハの製造方法 |
JP2004247610A (ja) | 2003-02-14 | 2004-09-02 | Canon Inc | 基板の製造方法 |
FR2854493B1 (fr) * | 2003-04-29 | 2005-08-19 | Soitec Silicon On Insulator | Traitement par brossage d'une plaquette semiconductrice avant collage |
EP1482548B1 (en) * | 2003-05-26 | 2016-04-13 | Soitec | A method of manufacturing a wafer |
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TW200733244A (en) * | 2005-10-06 | 2007-09-01 | Nxp Bv | Semiconductor device |
JP2007149723A (ja) * | 2005-11-24 | 2007-06-14 | Sumco Corp | 貼り合わせウェーハの製造方法 |
US7601271B2 (en) | 2005-11-28 | 2009-10-13 | S.O.I.Tec Silicon On Insulator Technologies | Process and equipment for bonding by molecular adhesion |
US7456080B2 (en) * | 2005-12-19 | 2008-11-25 | Corning Incorporated | Semiconductor on glass insulator made using improved ion implantation process |
WO2007074552A1 (ja) * | 2005-12-27 | 2007-07-05 | Shin-Etsu Chemical Co., Ltd. | Soiウェーハの製造方法及びsoiウェーハ |
KR20080086899A (ko) * | 2005-12-27 | 2008-09-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Soi 웨이퍼의 제조 방법 및 soi 웨이퍼 |
JP5315596B2 (ja) * | 2006-07-24 | 2013-10-16 | 株式会社Sumco | 貼合せsoiウェーハの製造方法 |
US7981754B2 (en) * | 2006-09-07 | 2011-07-19 | Renesas Electronics Corporation | Manufacturing method of bonded SOI substrate and manufacturing method of semiconductor device |
JP2008153411A (ja) * | 2006-12-18 | 2008-07-03 | Shin Etsu Chem Co Ltd | Soi基板の製造方法 |
JP4820801B2 (ja) * | 2006-12-26 | 2011-11-24 | 株式会社Sumco | 貼り合わせウェーハの製造方法 |
FR2914494A1 (fr) * | 2007-03-28 | 2008-10-03 | Soitec Silicon On Insulator | Procede de report d'une couche mince de materiau |
EP2040285A1 (en) * | 2007-09-19 | 2009-03-25 | S.O.I. TEC Silicon | Method for fabricating a mixed orientation substrate |
US8101501B2 (en) * | 2007-10-10 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US7696058B2 (en) | 2007-10-31 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
US7858495B2 (en) * | 2008-02-04 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
KR20090101119A (ko) | 2008-03-21 | 2009-09-24 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Soi 웨이퍼의 제조 방법 |
JP5386856B2 (ja) * | 2008-06-03 | 2014-01-15 | 株式会社Sumco | 貼り合わせウェーハの製造方法 |
JP5470839B2 (ja) * | 2008-12-25 | 2014-04-16 | 株式会社Sumco | 貼り合わせシリコンウェーハの製造方法 |
JP2010251407A (ja) * | 2009-04-13 | 2010-11-04 | Elpida Memory Inc | 半導体装置およびその製造方法 |
US8314018B2 (en) * | 2009-10-15 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
FR2953640B1 (fr) | 2009-12-04 | 2012-02-10 | S O I Tec Silicon On Insulator Tech | Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante |
US20110207306A1 (en) * | 2010-02-22 | 2011-08-25 | Sarko Cherekdjian | Semiconductor structure made using improved ion implantation process |
JP5688709B2 (ja) | 2010-09-24 | 2015-03-25 | 国立大学法人東京農工大学 | 薄膜半導体基板の製造方法 |
US8558195B2 (en) | 2010-11-19 | 2013-10-15 | Corning Incorporated | Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process |
US8196546B1 (en) | 2010-11-19 | 2012-06-12 | Corning Incorporated | Semiconductor structure made using improved multiple ion implantation process |
US8008175B1 (en) | 2010-11-19 | 2011-08-30 | Coring Incorporated | Semiconductor structure made using improved simultaneous multiple ion implantation process |
US9299556B2 (en) | 2010-12-27 | 2016-03-29 | Shanghai Simgui Technology Co. Ltd. | Method for preparing semiconductor substrate with insulating buried layer gettering process |
CN102130039B (zh) * | 2010-12-27 | 2013-04-10 | 上海新傲科技股份有限公司 | 采用吸杂工艺制备带有绝缘埋层的半导体衬底的方法 |
CN102130038A (zh) * | 2010-12-27 | 2011-07-20 | 上海新傲科技股份有限公司 | 采用离子注入制备绝缘体上硅材料的方法 |
JP6607207B2 (ja) * | 2017-01-25 | 2019-11-20 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
CN109671612B (zh) * | 2018-11-15 | 2020-07-03 | 中国科学院上海微系统与信息技术研究所 | 一种氧化镓半导体结构及其制备方法 |
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JPH09213916A (ja) * | 1996-02-06 | 1997-08-15 | Nippon Telegr & Teleph Corp <Ntt> | Soi基板の製造方法 |
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JP3452123B2 (ja) * | 1998-04-22 | 2003-09-29 | 三菱住友シリコン株式会社 | Soi基板の製造方法 |
US6323108B1 (en) * | 1999-07-27 | 2001-11-27 | The United States Of America As Represented By The Secretary Of The Navy | Fabrication ultra-thin bonded semiconductor layers |
-
2000
- 2000-12-18 EP EP00981791.7A patent/EP1187216B1/en not_active Expired - Lifetime
- 2000-12-18 WO PCT/JP2000/008945 patent/WO2001048825A1/ja active Application Filing
- 2000-12-18 KR KR1020017009616A patent/KR100796249B1/ko active IP Right Grant
- 2000-12-18 US US09/926,049 patent/US6566233B2/en not_active Expired - Lifetime
- 2000-12-28 TW TW089128089A patent/TW511141B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100796249B1 (ko) | 2008-01-21 |
EP1187216A1 (en) | 2002-03-13 |
US20030040163A1 (en) | 2003-02-27 |
EP1187216B1 (en) | 2018-04-04 |
TW511141B (en) | 2002-11-21 |
WO2001048825A1 (fr) | 2001-07-05 |
US6566233B2 (en) | 2003-05-20 |
EP1187216A4 (en) | 2008-09-24 |
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