JP5688709B2 - 薄膜半導体基板の製造方法 - Google Patents
薄膜半導体基板の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 207
- 239000000758 substrate Substances 0.000 title claims description 195
- 239000010409 thin film Substances 0.000 title claims description 76
- 238000000034 method Methods 0.000 title claims description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000005468 ion implantation Methods 0.000 claims description 49
- 238000010438 heat treatment Methods 0.000 claims description 36
- 150000002500 ions Chemical class 0.000 claims description 27
- 238000003776 cleavage reaction Methods 0.000 claims description 22
- 230000007017 scission Effects 0.000 claims description 22
- 238000002425 crystallisation Methods 0.000 claims description 11
- 230000008025 crystallization Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000001953 recrystallisation Methods 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 230000031700 light absorption Effects 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 238000009834 vaporization Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 22
- -1 hydrogen molecular ion Chemical class 0.000 description 16
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- 238000005498 polishing Methods 0.000 description 9
- 238000000985 reflectance spectrum Methods 0.000 description 9
- 238000002513 implantation Methods 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
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- Computer Hardware Design (AREA)
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Description
図1は、本発明の第1実施形態の薄膜半導体基板の製造方法を示す断面工程図であり、以下この図に基づいて第1実施形態の製造方法を説明する。
図3は、本発明の第2実施形態の薄膜半導体基板の製造方法における特徴部を示す断面工程図である。この図に示す第2実施形態の製造方法が、上述した第1実施形態と異なるところは、光ビームhνの照射による気泡層形成工程と、絶縁性基板11の張り合わせ工程とを逆に行うところにあり、他の工程は同様である。
(1)1200℃以上に加熱したカーボン発熱体を半導体基板1に接触させずに、半導体基板1の表面近くに配置して高速移動させて半導体基板を加熱する。カーボン発熱体の加熱は、光エネルギーの照射によって行うことができる(以上特開2007-115926号公報参照)。また、カーボン発熱体は、半導体基板1におけるイオン注入面に近接配置して高速移動させる。
(2)半導体基板1上に電極を形成し、電極に電流を流して半導体基板に電流ジュール熱を発生させる(Applied Physics A73,p.419-p.423参照)。この場合、半導体基板1におけるイオン注入面上に、クロム膜を介して電極を形成し、この電極に電流を流す。
(3)エネルギービームとして熱プラズマをビーム照射して半導体基板を加熱する(Japanese Journal of Applied Physics Vol.45,No.5B,(2006),p.4313-4320参照)。この場合、半導体基板1におけるイオン注入面に対して熱プラズマを走査させながら照射する。
(4)エネルギービームとして電子ビームを照射して半導体基板を加熱する。この場合、半導体基板1におけるイオン注入面に対して熱プラズマを走査させながら照射する。
Claims (9)
- 半導体基板の全面において深さを一定に制御してイオンを注入するイオン注入工程と、
前記半導体基板の加熱により当該半導体基板に注入したイオンを気化させて気泡層を形成する気泡層形成工程と、
前記半導体基板に絶縁性基板を張り合わせる張り合わせ工程と、
前記気泡層を劈開面として前記半導体基板を劈開することにより前記絶縁性基板側に当該半導体基板を劈開させた半導体薄膜を設ける劈開工程とを行い、
前記気泡層形成工程は、前記張り合わせ工程の前に行われ、
前記気泡層形成工程においては、前記半導体基板を1000℃〜1200℃の温度で10μ秒〜100m秒間加熱する
薄膜半導体基板の製造方法。 - 前記気泡層形成工程では、エネルギービームの照射によって前記半導体基板を加熱する
請求項1記載の薄膜半導体基板の製造方法。 - 前記気泡層形成工程では、前記半導体基板の表面に対して前記エネルギービームを走査させることにより、当該半導体基板の全面に前記エネルギービームを照射する
請求項2に記載の薄膜半導体基板の製造方法。 - 前記気泡層形成工程では、前記エネルギービームとして前記半導体基板で吸収される波長の光ビームを用いる
請求項2または3記載の薄膜半導体基板の製造方法。 - 前記気泡層形成工程では、前記半導体基板の一主面側に設けられた光吸収層を介して当該半導体基板に対して前記光ビームの照射を行う
請求項4記載の薄膜半導体基板の製造方法。 - 前記気泡層形成工程の前に、前記半導体基板中に注入されたイオンの深さ方向の分布を狭くするために当該イオンが気化するよりも低い温度で当該半導体基板を加熱する
請求項1〜5の何れかに記載の薄膜半導体基板の製造方法。 - 前記劈開工程の後、前記半導体薄膜を加熱して当該半導体薄膜を構成する半導体材料の結晶化を進める再結晶化工程を行う
請求項1〜6の何れかに記載の薄膜半導体基板の製造方法。 - 前記張り合わせ工程では、前記半導体基板において前記気泡層に近い側に前記絶縁性基板を張り合わせる
請求項1〜7の何れかに記載の薄膜半導体基板の製造方法。 - 前記気泡層形成工程では、イオン注入工程によって形成されたイオン注入層に近い面側から前記半導体基板を加熱する
請求項1〜8の何れかに記載の薄膜半導体基板の製造方法。
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JP2010214417A JP5688709B2 (ja) | 2010-09-24 | 2010-09-24 | 薄膜半導体基板の製造方法 |
US13/225,039 US8258043B2 (en) | 2010-09-24 | 2011-09-02 | Manufacturing method of thin film semiconductor substrate |
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JP5688709B2 true JP5688709B2 (ja) | 2015-03-25 |
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JP6757953B2 (ja) * | 2016-08-09 | 2020-09-23 | 学校法人 名古屋電気学園 | 表面加工方法、構造体の製造方法 |
WO2019209492A1 (en) * | 2018-04-27 | 2019-10-31 | Globalwafers Co., Ltd. | Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate |
US11694897B2 (en) * | 2021-06-16 | 2023-07-04 | Applied Materials, Inc. | Backside wafer dopant activation |
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JP3324469B2 (ja) * | 1997-09-26 | 2002-09-17 | 信越半導体株式会社 | Soiウエーハの製造方法ならびにこの方法で製造されるsoiウエーハ |
EP1187216B1 (en) | 1999-12-24 | 2018-04-04 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing bonded wafer |
JP4304879B2 (ja) | 2001-04-06 | 2009-07-29 | 信越半導体株式会社 | 水素イオンまたは希ガスイオンの注入量の決定方法 |
JP2004134672A (ja) * | 2002-10-11 | 2004-04-30 | Sony Corp | 超薄型半導体装置の製造方法および製造装置、並びに超薄型の裏面照射型固体撮像装置の製造方法および製造装置 |
US6911376B2 (en) * | 2003-10-01 | 2005-06-28 | Wafermasters | Selective heating using flash anneal |
JP5110772B2 (ja) * | 2004-02-03 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体薄膜層を有する基板の製造方法 |
JP5119742B2 (ja) | 2007-05-25 | 2013-01-16 | 信越半導体株式会社 | 貼り合わせウエーハの製造方法 |
US7781308B2 (en) * | 2007-12-03 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
WO2009152648A1 (zh) * | 2008-06-20 | 2009-12-23 | Lee Tienhsi | 薄膜制造方法 |
JP5496608B2 (ja) * | 2008-11-12 | 2014-05-21 | 信越化学工業株式会社 | Soi基板の作製方法 |
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US8258043B2 (en) | 2012-09-04 |
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