KR20000075981A - 다중 양자 웰 구조 활성층을 갖는 질화갈륨계 반도체 발광 소자 및 반도체 레이저 광원 장치 - Google Patents
다중 양자 웰 구조 활성층을 갖는 질화갈륨계 반도체 발광 소자 및 반도체 레이저 광원 장치 Download PDFInfo
- Publication number
- KR20000075981A KR20000075981A KR1019997008066A KR19997008066A KR20000075981A KR 20000075981 A KR20000075981 A KR 20000075981A KR 1019997008066 A KR1019997008066 A KR 1019997008066A KR 19997008066 A KR19997008066 A KR 19997008066A KR 20000075981 A KR20000075981 A KR 20000075981A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- quantum well
- semiconductor laser
- gallium nitride
- layers
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
Abstract
Description
Claims (11)
- 질화갈륨계 반도체 발광 소자에 있어서,반도체 기판(1, 21),적어도 인듐과 갈륨을 포함하는 질화물 반도체로 이루어지는 양자 웰 구조를 갖는 활성층(6, 26, 46, 76), 및상기 활성층을 개재하고 있는 제1 클래드층(5, 25) 및 제2 클래드층(9, 29)을 포함하고,상기 활성층(6, 26, 46, 76)은 2개의 양자 웰층(14, 34)과, 상기 양자 웰층간에 개재된 하나의 장벽층(15, 35, 55, 85)을 포함하는 것을 특징으로 하는 질화갈륨계 반도체 발광 소자.
- 제1항에 있어서, 상기 활성층(6, 26)은 상기 2개의 양자 웰층(14, 34)과, 상기 양자 웰층 간에 개재된 하나의 장벽층(15, 35)만으로 이루어지는 것을 특징으로 하는 질화갈륨계 반도체 발광 소자.
- 제2항에 있어서, 상기 장벽층(15, 35)의 층 두께는 10 ㎚ 이하인 것을 특징으로 하는 질화갈륨계 반도체 발광 소자.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 장벽층(15, 35)의 층 두께는 4 ㎚ 이하인 것을 특징으로 하는 질화갈륨계 반도체 발광 소자.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 각 양자 웰층(14, 34)의 두께가 10 ㎚ 이하인 것을 특징으로 하는 질화갈륨계 반도체 발광 소자.
- 제1항, 제3항, 제4항, 제5항 중 어느 한 항에 있어서,상기 활성층(46, 76)은 하나 또는 2층의 부가 양자 웰층(54, 84)과, 상기 부가 양자 웰층(54, 84)과 교대로 적층된 상기 부가 양자 웰층과 같은 층수의 장벽층(55, 85)을 더 포함하고,상기 활성층(46, 76) 내의 각 장벽층(55, 85)은 4 ㎚ 이하의 층 두께를 갖는 것을 특징으로 하는 질화갈륨계 반도체 발광 소자.
- 제1항 내지 제6항 중 어느 한 항에 있어서,상기 질화갈륨계 반도체 발광 소자는 반도체 레이저 소자이고, 상기 활성층(6, 46)은 이 반도체 레이저 소자의 발진부를 형성하는 것을 특징으로 하는 질화갈륨계 반도체 발광 소자.
- 제7항에 있어서,상기 반도체 레이저 소자는 자려 발진형(self-oscillating) 반도체 레이저 소자인 것을 특징으로 하는 질화갈륨계 반도체 발광 소자.
- 제1항 내지 제6항 중 어느 한 항에 있어서,상기 질화갈륨계 반도체 발광 소자는 반도체 발광 다이오드 소자이고, 상기 활성층(26, 76)은 이 반도체 발광 다이오드 소자의 발광부를 형성하는 것을 특징으로 하는 질화갈륨계 반도체 발광 소자.
- 제7항에 기재된 반도체 레이저 소자와, 상기 반도체 레이저 소자에 전류를 주입하는 구동 회로(17, 19)를 포함한 것을 특징으로 하는 반도체 레이저 광원 장치.
- 제10항에 있어서, 상기 전류는 변조된 전류이고, 상기 전류의 변조 주파수가 300 ㎒ 이상인 것을 특징으로 하는 반도체 레이저 광원 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1997-052596 | 1997-03-07 | ||
JP05259697A JP4365898B2 (ja) | 1997-03-07 | 1997-03-07 | 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置 |
JP6572597A JPH10261838A (ja) | 1997-03-19 | 1997-03-19 | 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置 |
JP1997-065725 | 1997-03-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000075981A true KR20000075981A (ko) | 2000-12-26 |
KR100447367B1 KR100447367B1 (ko) | 2004-09-08 |
Family
ID=26393220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-1999-7008066A KR100447367B1 (ko) | 1997-03-07 | 1998-02-27 | 다중 양자 웰 구조 활성층을 갖는 질화갈륨계 반도체 발광 소자 및 반도체 레이저 광원 장치 |
Country Status (5)
Country | Link |
---|---|
US (3) | US6377597B1 (ko) |
EP (1) | EP1022825B1 (ko) |
KR (1) | KR100447367B1 (ko) |
DE (1) | DE69834415T2 (ko) |
WO (1) | WO1998039827A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100812319B1 (ko) * | 2005-02-25 | 2008-03-10 | 미쓰비시덴키 가부시키가이샤 | 반도체 발광소자 |
KR20180070489A (ko) * | 2016-12-16 | 2018-06-26 | 니치아 카가쿠 고교 가부시키가이샤 | 발광소자의 제조 방법 |
Families Citing this family (111)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998039827A1 (fr) * | 1997-03-07 | 1998-09-11 | Sharp Kabushiki Kaisha | Element electroluminescent semi-conducteur a base de nitrure de gallium muni d'une zone active presentant une structure de multiplexage a puits quantique et un dispostif semi-conducteur a sources de lumiere utilisant le laser |
US6711191B1 (en) * | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
JP2000286448A (ja) * | 1999-03-31 | 2000-10-13 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
DE19955747A1 (de) * | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
JP2001308460A (ja) * | 2000-04-27 | 2001-11-02 | Sharp Corp | 窒化物半導体レーザ素子とその光ピックアップ装置 |
US6914922B2 (en) * | 2000-07-10 | 2005-07-05 | Sanyo Electric Co., Ltd. | Nitride based semiconductor light emitting device and nitride based semiconductor laser device |
EP2276059A1 (en) | 2000-08-04 | 2011-01-19 | The Regents of the University of California | Method of controlling stress in gallium nitride films deposited on substrates |
US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
KR100397609B1 (ko) * | 2001-02-16 | 2003-09-13 | 삼성전기주식회사 | 캐리어 유입 경로의 폭을 임의로 제어할 수 있는 반도체레이저 다이오드 |
JP2002261377A (ja) * | 2001-02-27 | 2002-09-13 | Hitachi Ltd | 光モジュール |
US6526083B1 (en) * | 2001-10-09 | 2003-02-25 | Xerox Corporation | Two section blue laser diode with reduced output power droop |
US6970490B2 (en) * | 2002-05-10 | 2005-11-29 | The Trustees Of Princeton University | Organic light emitting devices based on the formation of an electron-hole plasma |
US7485902B2 (en) * | 2002-09-18 | 2009-02-03 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device |
JP4727169B2 (ja) * | 2003-08-04 | 2011-07-20 | 日本碍子株式会社 | エピタキシャル基板、当該エピタキシャル基板の製造方法、当該エピタキシャル基板の反り抑制方法、および当該エピタキシャル基板を用いた半導体積層構造 |
KR101045202B1 (ko) * | 2003-10-17 | 2011-06-30 | 삼성전자주식회사 | III-V 족 GaN 계 반도체 소자 및 그 제조방법 |
GB2407700A (en) * | 2003-10-28 | 2005-05-04 | Sharp Kk | MBE growth of nitride semiconductor lasers |
US7138648B2 (en) | 2003-12-17 | 2006-11-21 | Palo Alto Research Center Incorporated | Ultraviolet group III-nitride-based quantum well laser diodes |
JP3994287B2 (ja) * | 2004-07-07 | 2007-10-17 | サンケン電気株式会社 | 半導体発光素子 |
JP2007110090A (ja) | 2005-09-13 | 2007-04-26 | Sony Corp | GaN系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体 |
GB2432715A (en) * | 2005-11-25 | 2007-05-30 | Sharp Kk | Nitride semiconductor light emitting devices |
KR101274206B1 (ko) * | 2006-02-21 | 2013-06-14 | 삼성전자주식회사 | 리지 구조를 가지는 반도체 레이저 다이오드 |
JP2008078311A (ja) | 2006-09-20 | 2008-04-03 | Toshiba Corp | 窒化物系半導体レーザ装置 |
JP2008235606A (ja) * | 2007-03-20 | 2008-10-02 | Sony Corp | 半導体発光素子、半導体発光素子の製造方法、バックライト、表示装置、電子機器および発光装置 |
JP4655103B2 (ja) * | 2008-04-14 | 2011-03-23 | ソニー株式会社 | GaN系半導体発光素子、発光素子組立体、発光装置、GaN系半導体発光素子の駆動方法、及び、画像表示装置 |
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US8143148B1 (en) | 2008-07-14 | 2012-03-27 | Soraa, Inc. | Self-aligned multi-dielectric-layer lift off process for laser diode stripes |
US8259769B1 (en) | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
US8673074B2 (en) | 2008-07-16 | 2014-03-18 | Ostendo Technologies, Inc. | Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) |
WO2010017148A1 (en) | 2008-08-04 | 2010-02-11 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
CN101728451B (zh) * | 2008-10-21 | 2013-10-30 | 展晶科技(深圳)有限公司 | 半导体光电元件 |
KR101228983B1 (ko) | 2008-11-17 | 2013-02-04 | 삼성전자주식회사 | 질화물 반도체 발광소자 |
US8422525B1 (en) | 2009-03-28 | 2013-04-16 | Soraa, Inc. | Optical device structure using miscut GaN substrates for laser applications |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
CN102396083B (zh) | 2009-04-13 | 2015-12-16 | 天空激光二极管有限公司 | 用于激光器应用的使用gan衬底的光学装置结构 |
US8254425B1 (en) | 2009-04-17 | 2012-08-28 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8242522B1 (en) | 2009-05-12 | 2012-08-14 | Soraa, Inc. | Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm |
US8294179B1 (en) * | 2009-04-17 | 2012-10-23 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
KR101603777B1 (ko) * | 2009-04-16 | 2016-03-15 | 삼성전자주식회사 | 백색 발광 다이오드 |
US8416825B1 (en) | 2009-04-17 | 2013-04-09 | Soraa, Inc. | Optical device structure using GaN substrates and growth structure for laser applications |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
JP5233911B2 (ja) * | 2009-08-26 | 2013-07-10 | 株式会社リコー | 電気光学素子 |
US8314429B1 (en) | 2009-09-14 | 2012-11-20 | Soraa, Inc. | Multi color active regions for white light emitting diode |
US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
CN102630349B (zh) | 2009-09-18 | 2017-06-13 | 天空公司 | 功率发光二极管及利用电流密度操作的方法 |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
KR20110042560A (ko) * | 2009-10-19 | 2011-04-27 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법 및 발광소자 패키지 |
US8629065B2 (en) * | 2009-11-06 | 2014-01-14 | Ostendo Technologies, Inc. | Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE) |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9927611B2 (en) | 2010-03-29 | 2018-03-27 | Soraa Laser Diode, Inc. | Wearable laser based display method and system |
DE112011101530B4 (de) | 2010-04-30 | 2021-03-25 | Trustees Of Boston University | Verfahren zur Herstellung einer optischen Vorrichtung |
US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
JP5636773B2 (ja) * | 2010-07-06 | 2014-12-10 | ソニー株式会社 | 半導体レーザ |
US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
US8975615B2 (en) | 2010-11-09 | 2015-03-10 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material |
JP5113305B2 (ja) | 2011-01-21 | 2013-01-09 | パナソニック株式会社 | 窒化ガリウム系化合物半導体発光素子および当該発光素子を備える光源 |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US9318875B1 (en) | 2011-01-24 | 2016-04-19 | Soraa Laser Diode, Inc. | Color converting element for laser diode |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US9093820B1 (en) | 2011-01-25 | 2015-07-28 | Soraa Laser Diode, Inc. | Method and structure for laser devices using optical blocking regions |
US9236530B2 (en) | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
US9287684B2 (en) | 2011-04-04 | 2016-03-15 | Soraa Laser Diode, Inc. | Laser package having multiple emitters with color wheel |
JP5996846B2 (ja) * | 2011-06-30 | 2016-09-21 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
US9646827B1 (en) | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
US8971370B1 (en) | 2011-10-13 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices using a semipolar plane |
JP5522147B2 (ja) * | 2011-11-02 | 2014-06-18 | 住友電気工業株式会社 | 窒化物半導体発光素子、及び、窒化物半導体発光素子の作製方法 |
US8723189B1 (en) | 2012-01-06 | 2014-05-13 | Trustees Of Boston University | Ultraviolet light emitting diode structures and methods of manufacturing the same |
CN103296047A (zh) * | 2012-03-02 | 2013-09-11 | 华夏光股份有限公司 | 发光二极管装置 |
US9020003B1 (en) | 2012-03-14 | 2015-04-28 | Soraa Laser Diode, Inc. | Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates |
US9343871B1 (en) | 2012-04-05 | 2016-05-17 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US10559939B1 (en) | 2012-04-05 | 2020-02-11 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9800016B1 (en) | 2012-04-05 | 2017-10-24 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
US9099843B1 (en) | 2012-07-19 | 2015-08-04 | Soraa Laser Diode, Inc. | High operating temperature laser diodes |
US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
US9166372B1 (en) | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
US9379525B2 (en) | 2014-02-10 | 2016-06-28 | Soraa Laser Diode, Inc. | Manufacturable laser diode |
US9520695B2 (en) | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
US9209596B1 (en) | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
US9564736B1 (en) | 2014-06-26 | 2017-02-07 | Soraa Laser Diode, Inc. | Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode |
US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
US9666677B1 (en) | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
US9653642B1 (en) | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
US9873170B2 (en) * | 2015-03-24 | 2018-01-23 | Nichia Corporation | Method of manufacturing light emitting element |
US10879673B2 (en) | 2015-08-19 | 2020-12-29 | Soraa Laser Diode, Inc. | Integrated white light source using a laser diode and a phosphor in a surface mount device package |
US11437775B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | Integrated light source using a laser diode |
US10938182B2 (en) | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
US10505072B2 (en) | 2016-12-16 | 2019-12-10 | Nichia Corporation | Method for manufacturing light emitting element |
CN110494987B (zh) * | 2017-04-24 | 2022-03-01 | 苏州晶湛半导体有限公司 | 一种半导体结构和制备半导体结构的方法 |
CN108511326A (zh) * | 2018-05-04 | 2018-09-07 | 中山大学 | 一种化合物半导体材料InGaN及其外延制备方法 |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US10903623B2 (en) | 2019-05-14 | 2021-01-26 | Soraa Laser Diode, Inc. | Method and structure for manufacturable large area gallium and nitrogen containing substrate |
US11228158B2 (en) | 2019-05-14 | 2022-01-18 | Kyocera Sld Laser, Inc. | Manufacturable laser diodes on a large area gallium and nitrogen containing substrate |
CN111641107B (zh) * | 2020-05-29 | 2021-09-10 | 南京邮电大学 | 基于二氧化钛光子晶体的氮化镓基面激光器及制备方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59188988A (ja) * | 1983-04-11 | 1984-10-26 | Nec Corp | 半導体レ−ザおよびその駆動方法 |
JP2670046B2 (ja) | 1987-04-15 | 1997-10-29 | 株式会社日立製作所 | 光電子装置 |
US4961197A (en) | 1988-09-07 | 1990-10-02 | Hitachi, Ltd. | Semiconductor laser device |
JP2723921B2 (ja) | 1988-09-07 | 1998-03-09 | 株式会社日立製作所 | 半導体レーザ素子 |
JP2679714B2 (ja) * | 1988-11-14 | 1997-11-19 | 東洋紡績 株式会社 | 吸着性シートおよび空気浄化用フィルター |
DE3840717A1 (de) * | 1988-12-02 | 1990-06-07 | Max Planck Gesellschaft | Lichtemittierendes bauelement aus verbindungs-halbleiter |
JPH02168746A (ja) | 1988-12-22 | 1990-06-28 | Toshiba Corp | 高周波重畳形発光駆動回路 |
JPH05102604A (ja) * | 1991-10-11 | 1993-04-23 | Fuji Xerox Co Ltd | 半導体レーザ装置 |
DE4214136C2 (de) | 1992-04-29 | 1995-09-21 | Daimler Benz Aerospace Ag | Zweiachsig messender Sonnensensor |
JP2932467B2 (ja) * | 1993-03-12 | 1999-08-09 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JP3489878B2 (ja) | 1993-10-22 | 2004-01-26 | シャープ株式会社 | 半導体レーザ素子およびその自励発振強度の調整方法 |
JP3277711B2 (ja) | 1994-03-03 | 2002-04-22 | ソニー株式会社 | 半導体レーザ及びその製造方法 |
JPH07263798A (ja) | 1994-03-25 | 1995-10-13 | Mitsubishi Electric Corp | 半導体レーザ,及びその製造方法 |
JPH0818159A (ja) | 1994-04-25 | 1996-01-19 | Hitachi Ltd | 半導体レーザ素子及びその作製方法 |
JPH08111558A (ja) | 1994-10-07 | 1996-04-30 | Hitachi Ltd | 半導体レーザ素子 |
JP2780691B2 (ja) | 1994-12-02 | 1998-07-30 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
JP3538275B2 (ja) | 1995-02-23 | 2004-06-14 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP3505259B2 (ja) | 1995-03-27 | 2004-03-08 | 三洋電機株式会社 | 半導体レーザ素子 |
JP3453916B2 (ja) | 1995-04-03 | 2003-10-06 | ソニー株式会社 | 半導体レーザ |
JP3268958B2 (ja) * | 1995-05-15 | 2002-03-25 | 三洋電機株式会社 | 半導体レーザ装置 |
JP2705641B2 (ja) | 1995-06-02 | 1998-01-28 | 日本電気株式会社 | 半導体レーザ装置 |
GB2301708A (en) | 1995-06-03 | 1996-12-11 | Sharp Kk | Variable coherence light source |
JPH09116225A (ja) * | 1995-10-20 | 1997-05-02 | Hitachi Ltd | 半導体発光素子 |
JP2877063B2 (ja) * | 1995-11-06 | 1999-03-31 | 松下電器産業株式会社 | 半導体発光素子 |
US5923690A (en) * | 1996-01-25 | 1999-07-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device |
US5767704A (en) * | 1996-08-30 | 1998-06-16 | Larson; Francis Willard | High frequency analog switch for use with a laser diode |
US6031858A (en) * | 1996-09-09 | 2000-02-29 | Kabushiki Kaisha Toshiba | Semiconductor laser and method of fabricating same |
JP3854693B2 (ja) * | 1996-09-30 | 2006-12-06 | キヤノン株式会社 | 半導体レーザの製造方法 |
US5838707A (en) * | 1996-12-27 | 1998-11-17 | Motorola, Inc. | Ultraviolet/visible light emitting vertical cavity surface emitting laser and method of fabrication |
WO1998039827A1 (fr) * | 1997-03-07 | 1998-09-11 | Sharp Kabushiki Kaisha | Element electroluminescent semi-conducteur a base de nitrure de gallium muni d'une zone active presentant une structure de multiplexage a puits quantique et un dispostif semi-conducteur a sources de lumiere utilisant le laser |
US5892786A (en) * | 1997-03-26 | 1999-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Output control of vertical microcavity light emitting device |
US6154477A (en) * | 1997-05-13 | 2000-11-28 | Berkeley Research Associates, Inc. | On-board laser-triggered multi-layer semiconductor power switch |
-
1998
- 1998-02-27 WO PCT/JP1998/000828 patent/WO1998039827A1/ja active IP Right Grant
- 1998-02-27 DE DE69834415T patent/DE69834415T2/de not_active Expired - Lifetime
- 1998-02-27 EP EP98905700A patent/EP1022825B1/en not_active Expired - Lifetime
- 1998-02-27 KR KR10-1999-7008066A patent/KR100447367B1/ko not_active IP Right Cessation
- 1998-02-27 US US09/380,537 patent/US6377597B1/en not_active Expired - Lifetime
-
2002
- 2002-01-17 US US10/050,078 patent/US6956882B2/en not_active Expired - Lifetime
-
2005
- 2005-05-13 US US11/128,217 patent/US7183569B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100812319B1 (ko) * | 2005-02-25 | 2008-03-10 | 미쓰비시덴키 가부시키가이샤 | 반도체 발광소자 |
KR20180070489A (ko) * | 2016-12-16 | 2018-06-26 | 니치아 카가쿠 고교 가부시키가이샤 | 발광소자의 제조 방법 |
KR20220123614A (ko) * | 2016-12-16 | 2022-09-08 | 니치아 카가쿠 고교 가부시키가이샤 | 발광소자의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
DE69834415D1 (de) | 2006-06-08 |
WO1998039827A1 (fr) | 1998-09-11 |
DE69834415T2 (de) | 2006-11-16 |
US6956882B2 (en) | 2005-10-18 |
US6377597B1 (en) | 2002-04-23 |
US7183569B2 (en) | 2007-02-27 |
EP1022825B1 (en) | 2006-05-03 |
EP1022825A4 (en) | 2000-07-26 |
US20050211971A1 (en) | 2005-09-29 |
EP1022825A1 (en) | 2000-07-26 |
KR100447367B1 (ko) | 2004-09-08 |
US20020085603A1 (en) | 2002-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100447367B1 (ko) | 다중 양자 웰 구조 활성층을 갖는 질화갈륨계 반도체 발광 소자 및 반도체 레이저 광원 장치 | |
KR100902109B1 (ko) | 질화 갈륨계 화합물 반도체 소자 | |
KR100432762B1 (ko) | 반도체 레이저 및 그 제조 방법 | |
US6724013B2 (en) | Edge-emitting nitride-based laser diode with p-n tunnel junction current injection | |
JP3653169B2 (ja) | 窒化ガリウム系半導体レーザ素子 | |
EP1014455B1 (en) | Nitride semiconductor device | |
JP4075324B2 (ja) | 窒化物半導体素子 | |
US20090078944A1 (en) | Light emitting device and method of manufacturing the same | |
KR100457415B1 (ko) | 반도체 발광소자 및 그 제조방법 | |
US20060060833A1 (en) | Radiation-emitting optoelectronic component with a quantum well structure and method for producing it | |
JP4441563B2 (ja) | 窒化物半導体レーザ素子 | |
JP3394678B2 (ja) | 半導体発光素子 | |
JP2001352098A (ja) | 半導体発光素子およびその製造方法 | |
JP4401610B2 (ja) | 窒化物半導体レーザ素子 | |
JPH10261838A (ja) | 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置 | |
JPH10294532A (ja) | 窒化物系半導体発光素子およびその製造方法 | |
JPH1051070A (ja) | 半導体レーザ | |
JP4365898B2 (ja) | 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置 | |
KR100737339B1 (ko) | 3족 질화물 반도체 발광소자 및 그 제조방법 | |
JP2000101142A (ja) | 化合物半導体素子 | |
JP3880683B2 (ja) | 窒化ガリウム系半導体発光素子の製造方法 | |
KR20050123421A (ko) | 질화물 반도체 소자 | |
JP4342134B2 (ja) | 窒化物半導体レーザ素子 | |
JP2002280673A (ja) | 半導体発光素子 | |
JPH11340573A (ja) | 窒化ガリウム系半導体レーザ素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
AMND | Amendment | ||
B601 | Maintenance of original decision after re-examination before a trial | ||
J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20020829 Effective date: 20040616 |
|
S901 | Examination by remand of revocation | ||
GRNO | Decision to grant (after opposition) | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120802 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20130801 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20140818 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20150817 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20160819 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20170818 Year of fee payment: 14 |
|
EXPY | Expiration of term |