KR20000011661A - 능동집적회로상의본딩을위한시스템및방법 - Google Patents
능동집적회로상의본딩을위한시스템및방법 Download PDFInfo
- Publication number
- KR20000011661A KR20000011661A KR1019990028134A KR19990028134A KR20000011661A KR 20000011661 A KR20000011661 A KR 20000011661A KR 1019990028134 A KR1019990028134 A KR 1019990028134A KR 19990028134 A KR19990028134 A KR 19990028134A KR 20000011661 A KR20000011661 A KR 20000011661A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- dielectric layer
- bond pad
- reinforcement
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
- H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
- H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/931—Shapes of bond pads
- H10W72/932—Plan-view shape, i.e. in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/951—Materials of bond pads
- H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/981—Auxiliary members, e.g. spacers
- H10W72/983—Reinforcing structures, e.g. collars
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9296198P | 1998-07-14 | 1998-07-14 | |
| US60/092,961 | 1998-07-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000011661A true KR20000011661A (ko) | 2000-02-25 |
Family
ID=22235985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990028134A Ceased KR20000011661A (ko) | 1998-07-14 | 1999-07-13 | 능동집적회로상의본딩을위한시스템및방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6232662B1 (https=) |
| EP (1) | EP0973198A3 (https=) |
| JP (2) | JP5016155B2 (https=) |
| KR (1) | KR20000011661A (https=) |
Families Citing this family (92)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8021976B2 (en) * | 2002-10-15 | 2011-09-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
| US6965165B2 (en) * | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
| US7405149B1 (en) * | 1998-12-21 | 2008-07-29 | Megica Corporation | Post passivation method for semiconductor chip or wafer |
| JP2000269293A (ja) * | 1999-03-18 | 2000-09-29 | Fujitsu Ltd | 半導体装置 |
| JP2000286254A (ja) * | 1999-03-31 | 2000-10-13 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| US6503820B1 (en) * | 1999-10-04 | 2003-01-07 | Koninklijke Philips Electronics N.V. | Die pad crack absorption system and method for integrated circuit chip fabrication |
| US6191023B1 (en) * | 1999-11-18 | 2001-02-20 | Taiwan Semiconductor Manufacturing Company | Method of improving copper pad adhesion |
| US6198170B1 (en) | 1999-12-16 | 2001-03-06 | Conexant Systems, Inc. | Bonding pad and support structure and method for their fabrication |
| US6495917B1 (en) * | 2000-03-17 | 2002-12-17 | International Business Machines Corporation | Method and structure of column interconnect |
| US6818990B2 (en) * | 2000-04-03 | 2004-11-16 | Rensselaer Polytechnic Institute | Fluorine diffusion barriers for fluorinated dielectrics in integrated circuits |
| WO2001078145A2 (en) * | 2000-04-12 | 2001-10-18 | Koninklijke Philips Electronics N.V. | Boding pad in semiconductor device |
| WO2001078146A2 (en) * | 2000-04-12 | 2001-10-18 | Koninklijke Philips Electronics N.V. | Bonding pad in semiconductor device |
| JP4979154B2 (ja) * | 2000-06-07 | 2012-07-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US6380087B1 (en) * | 2000-06-19 | 2002-04-30 | Chartered Semiconductor Manufacturing Inc. | CMP process utilizing dummy plugs in damascene process |
| US6683380B2 (en) | 2000-07-07 | 2004-01-27 | Texas Instruments Incorporated | Integrated circuit with bonding layer over active circuitry |
| JP2002198374A (ja) * | 2000-10-16 | 2002-07-12 | Sharp Corp | 半導体装置およびその製造方法 |
| US6472333B2 (en) * | 2001-03-28 | 2002-10-29 | Applied Materials, Inc. | Silicon carbide cap layers for low dielectric constant silicon oxide layers |
| US6800918B2 (en) * | 2001-04-18 | 2004-10-05 | Intel Corporation | EMI and noise shielding for multi-metal layer high frequency integrated circuit processes |
| US6501186B1 (en) * | 2001-07-25 | 2002-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd | Bond pad having variable density via support and method for fabrication |
| US7148553B1 (en) * | 2001-08-01 | 2006-12-12 | Davies Robert B | Semiconductor device with inductive component and method of making |
| US6864166B1 (en) | 2001-08-29 | 2005-03-08 | Micron Technology, Inc. | Method of manufacturing wire bonded microelectronic device assemblies |
| SG117395A1 (en) | 2001-08-29 | 2005-12-29 | Micron Technology Inc | Wire bonded microelectronic device assemblies and methods of manufacturing same |
| US6875682B1 (en) * | 2001-09-04 | 2005-04-05 | Taiwan Semiconductor Manufacturing Company | Mesh pad structure to eliminate IMD crack on pad |
| KR100400047B1 (ko) * | 2001-11-19 | 2003-09-29 | 삼성전자주식회사 | 반도체 소자의 본딩패드 구조 및 그 형성방법 |
| US7932603B2 (en) | 2001-12-13 | 2011-04-26 | Megica Corporation | Chip structure and process for forming the same |
| US6803662B2 (en) * | 2001-12-21 | 2004-10-12 | International Business Machines Corporation | Low dielectric constant material reinforcement for improved electromigration reliability |
| US6765296B2 (en) * | 2002-01-10 | 2004-07-20 | Chartered Semiconductor Manufacturing Ltd. | Via-sea layout integrated circuits |
| US7096581B2 (en) * | 2002-03-06 | 2006-08-29 | Stmicroelectronics, Inc. | Method for providing a redistribution metal layer in an integrated circuit |
| US6614091B1 (en) * | 2002-03-13 | 2003-09-02 | Motorola, Inc. | Semiconductor device having a wire bond pad and method therefor |
| US6921979B2 (en) * | 2002-03-13 | 2005-07-26 | Freescale Semiconductor, Inc. | Semiconductor device having a bond pad and method therefor |
| US6844631B2 (en) * | 2002-03-13 | 2005-01-18 | Freescale Semiconductor, Inc. | Semiconductor device having a bond pad and method therefor |
| TW539621B (en) * | 2002-04-03 | 2003-07-01 | Benq Corp | Ink jet printer with independent driving circuit for preheat and heat maintance |
| US6906361B2 (en) * | 2002-04-08 | 2005-06-14 | Guobiao Zhang | Peripheral circuits of electrically programmable three-dimensional memory |
| DE10229493B4 (de) * | 2002-07-01 | 2007-03-29 | Infineon Technologies Ag | Integrierte Halbleiterstruktur |
| US6908841B2 (en) * | 2002-09-20 | 2005-06-21 | Infineon Technologies Ag | Support structures for wirebond regions of contact pads over low modulus materials |
| US7288845B2 (en) * | 2002-10-15 | 2007-10-30 | Marvell Semiconductor, Inc. | Fabrication of wire bond pads over underlying active devices, passive devices and/or dielectric layers in integrated circuits |
| DE10249192A1 (de) | 2002-10-22 | 2004-05-13 | Infineon Technologies Ag | Elektronisches Bauelement mit integriertem passiven elektronischen Bauelement und Verfahren zu dessen Herstellung |
| US7023090B2 (en) * | 2003-01-29 | 2006-04-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding pad and via structure design |
| JP4170103B2 (ja) * | 2003-01-30 | 2008-10-22 | Necエレクトロニクス株式会社 | 半導体装置、および半導体装置の製造方法 |
| US7247939B2 (en) * | 2003-04-01 | 2007-07-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal filled semiconductor features with improved structural stability |
| US6982493B2 (en) | 2003-04-03 | 2006-01-03 | International Business Machines Corporation | Wedgebond pads having a nonplanar surface structure |
| US6864578B2 (en) * | 2003-04-03 | 2005-03-08 | International Business Machines Corporation | Internally reinforced bond pads |
| US7566964B2 (en) * | 2003-04-10 | 2009-07-28 | Agere Systems Inc. | Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures |
| US7453158B2 (en) * | 2003-07-31 | 2008-11-18 | Nvidia Corporation | Pad over active circuit system and method with meshed support structure |
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| JP4938983B2 (ja) * | 2004-01-22 | 2012-05-23 | 川崎マイクロエレクトロニクス株式会社 | 半導体集積回路 |
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| US7443020B2 (en) * | 2005-02-28 | 2008-10-28 | Texas Instruments Incorporated | Minimizing number of masks to be changed when changing existing connectivity in an integrated circuit |
| JP2006245076A (ja) * | 2005-03-01 | 2006-09-14 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JP4713936B2 (ja) * | 2005-05-09 | 2011-06-29 | 株式会社東芝 | 半導体装置 |
| JP5234239B2 (ja) * | 2005-07-06 | 2013-07-10 | セイコーエプソン株式会社 | 半導体装置 |
| JP4671814B2 (ja) | 2005-09-02 | 2011-04-20 | パナソニック株式会社 | 半導体装置 |
| US7741716B1 (en) * | 2005-11-08 | 2010-06-22 | Altera Corporation | Integrated circuit bond pad structures |
| US7205673B1 (en) * | 2005-11-18 | 2007-04-17 | Lsi Logic Corporation | Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing |
| JP4663510B2 (ja) * | 2005-12-21 | 2011-04-06 | パナソニック株式会社 | 半導体装置 |
| US7592710B2 (en) * | 2006-03-03 | 2009-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad structure for wire bonding |
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| JP5022643B2 (ja) | 2006-07-13 | 2012-09-12 | 株式会社東芝 | 半導体装置のesd保護回路 |
| US7679180B2 (en) * | 2006-11-07 | 2010-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bond pad design to minimize dielectric cracking |
| JP5507796B2 (ja) * | 2007-02-22 | 2014-05-28 | 日本電気株式会社 | 集積回路 |
| DE102007011126B4 (de) * | 2007-03-07 | 2009-08-27 | Austriamicrosystems Ag | Halbleiterbauelement mit Anschlusskontaktfläche |
| US7919839B2 (en) * | 2007-07-24 | 2011-04-05 | Northrop Grumman Systems Corporation | Support structures for on-wafer testing of wafer-level packages and multiple wafer stacked structures |
| US8178980B2 (en) * | 2008-02-05 | 2012-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad structure |
| US8581423B2 (en) | 2008-11-17 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double solid metal pad with reduced area |
| US9000558B2 (en) * | 2009-01-19 | 2015-04-07 | Broadcom Corporation | Wafer-level flip chip package with RF passive element/ package signal connection overlay |
| US9035281B2 (en) | 2009-06-30 | 2015-05-19 | Nokia Technologies Oy | Graphene device and method of fabricating a graphene device |
| JP2012039001A (ja) * | 2010-08-10 | 2012-02-23 | Renesas Electronics Corp | 半導体装置 |
| US20130154099A1 (en) | 2011-12-16 | 2013-06-20 | Semiconductor Components Industries, Llc | Pad over interconnect pad structure design |
| KR101916088B1 (ko) * | 2012-04-02 | 2018-11-07 | 삼성전자주식회사 | 반도체 패키지 |
| CN103390647A (zh) * | 2012-05-10 | 2013-11-13 | 无锡华润上华半导体有限公司 | 一种功率mos器件结构 |
| US9768221B2 (en) | 2013-06-27 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad structure layout for semiconductor device |
| US8963343B1 (en) * | 2013-09-27 | 2015-02-24 | Cypress Semiconductor Corporation | Ferroelectric memories with a stress buffer |
| CN103630254B (zh) * | 2013-11-18 | 2015-12-02 | 西安电子科技大学 | 一种石墨烯温度传感器及其制备工艺 |
| CN104765481B (zh) * | 2014-01-06 | 2019-05-28 | 宸鸿科技(厦门)有限公司 | 触控面板及其制作方法 |
| US10896888B2 (en) * | 2018-03-15 | 2021-01-19 | Microchip Technology Incorporated | Integrated circuit (IC) device including a force mitigation system for reducing under-pad damage caused by wire bond |
| CN115172309A (zh) * | 2022-07-28 | 2022-10-11 | 上海华虹宏力半导体制造有限公司 | 半导体结构及形成方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| JPH1022322A (ja) * | 1996-06-28 | 1998-01-23 | Denso Corp | 半導体装置 |
| JP3482779B2 (ja) * | 1996-08-20 | 2004-01-06 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
| JP3526376B2 (ja) * | 1996-08-21 | 2004-05-10 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US6143396A (en) * | 1997-05-01 | 2000-11-07 | Texas Instruments Incorporated | System and method for reinforcing a bond pad |
| US6037668A (en) * | 1998-11-13 | 2000-03-14 | Motorola, Inc. | Integrated circuit having a support structure |
-
1999
- 1999-07-02 US US09/347,212 patent/US6232662B1/en not_active Expired - Lifetime
- 1999-07-07 JP JP19266699A patent/JP5016155B2/ja not_active Expired - Fee Related
- 1999-07-13 KR KR1019990028134A patent/KR20000011661A/ko not_active Ceased
- 1999-07-14 EP EP99202296A patent/EP0973198A3/en not_active Withdrawn
-
2012
- 2012-05-08 JP JP2012106483A patent/JP5758344B2/ja not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06224196A (ja) * | 1993-01-28 | 1994-08-12 | Hitachi Ltd | 半導体集積回路装置 |
| KR0146013B1 (ko) * | 1993-08-05 | 1998-11-02 | 리차드 디. 로먼 | 집적 회로 |
| KR980011851A (ko) * | 1996-07-13 | 1998-04-30 | 김광호 | 홀 비아(Hole Via)를 이용한 다층 금속 배선의 금속층간 접속 구조 및 본딩 패드 |
| JPH10178011A (ja) * | 1996-12-19 | 1998-06-30 | Sanyo Electric Co Ltd | 半導体集積回路装置とその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000049190A (ja) | 2000-02-18 |
| EP0973198A3 (en) | 2003-03-19 |
| JP2012169663A (ja) | 2012-09-06 |
| EP0973198A2 (en) | 2000-01-19 |
| JP5016155B2 (ja) | 2012-09-05 |
| US6232662B1 (en) | 2001-05-15 |
| JP5758344B2 (ja) | 2015-08-05 |
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