KR19990086981A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR19990086981A
KR19990086981A KR1019980035150A KR19980035150A KR19990086981A KR 19990086981 A KR19990086981 A KR 19990086981A KR 1019980035150 A KR1019980035150 A KR 1019980035150A KR 19980035150 A KR19980035150 A KR 19980035150A KR 19990086981 A KR19990086981 A KR 19990086981A
Authority
KR
South Korea
Prior art keywords
semiconductor
layer
type
silicon
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019980035150A
Other languages
English (en)
Korean (ko)
Inventor
시노부 후지타
아츠시 구로베
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시무로 타이죠, 가부시끼가이샤 도시바 filed Critical 니시무로 타이죠
Publication of KR19990086981A publication Critical patent/KR19990086981A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
KR1019980035150A 1997-08-29 1998-08-28 반도체장치 Abandoned KR19990086981A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP97-234284 1997-08-29
JP23428497 1997-08-29
JP17827898A JP4071360B2 (ja) 1997-08-29 1998-06-25 半導体装置
JP98-178278 1998-06-25

Publications (1)

Publication Number Publication Date
KR19990086981A true KR19990086981A (ko) 1999-12-15

Family

ID=26498509

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980035150A Abandoned KR19990086981A (ko) 1997-08-29 1998-08-28 반도체장치

Country Status (5)

Country Link
US (1) US6157047A (enExample)
EP (1) EP0899796B1 (enExample)
JP (1) JP4071360B2 (enExample)
KR (1) KR19990086981A (enExample)
DE (1) DE69836177T2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
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KR100319300B1 (ko) * 2000-03-23 2002-01-04 윤종용 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자
KR100446622B1 (ko) * 2002-01-10 2004-09-04 삼성전자주식회사 실리콘 광소자 및 이를 적용한 발광 디바이스 장치
KR100455288B1 (ko) * 2002-03-08 2004-11-06 삼성전자주식회사 실리콘 발광소자를 이용한 평판형 표시장치
US8878196B2 (en) 2005-09-27 2014-11-04 Samsung Electronics Co., Ltd. Light-emitting device comprising semiconductor nanocrystal layer free of voids and method for producing the same

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CN1516239A (zh) 1996-06-19 2004-07-28 ���µ�����ҵ��ʽ���� 光电子材料、使用该材料的器件和制造光电子材料的方法
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6207392B1 (en) 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6864626B1 (en) * 1998-06-03 2005-03-08 The Regents Of The University Of California Electronic displays using optically pumped luminescent semiconductor nanocrystals
US20050146258A1 (en) 1999-06-02 2005-07-07 Shimon Weiss Electronic displays using optically pumped luminescent semiconductor nanocrystals
EP0975027A2 (en) 1998-07-23 2000-01-26 Sony Corporation Light emitting device and process for producing the same
KR100696353B1 (ko) * 1998-07-23 2007-03-19 소니 가부시끼 가이샤 발광 소자 및 그 제조 방법
US6639354B1 (en) * 1999-07-23 2003-10-28 Sony Corporation Light emitting device, production method thereof, and light emitting apparatus and display unit using the same
WO2001014250A2 (en) * 1999-08-23 2001-03-01 University Of Hawaii Synthesis of silicon nanoparticles and metal-centered silicon nanoparticles and applications thereof
TW474028B (en) * 2000-02-18 2002-01-21 Ching-Fu Lin Light-emitting device based on indirect bandgap material
KR100411573B1 (ko) * 2000-03-04 2003-12-18 주식회사 엔엠씨텍 콴텀홀을 이용한 반도체 발광소자의 제조방법
DE10011258A1 (de) * 2000-03-08 2001-09-20 Rossendorf Forschzent Integrierter Optokoppler und Verfahren zu seiner Herstellung
US6797412B1 (en) * 2000-04-11 2004-09-28 University Of Connecticut Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films
JP3806751B2 (ja) 2000-05-23 2006-08-09 独立行政法人科学技術振興機構 量子サイズ効果型微小電子銃の製造方法
US6303476B1 (en) * 2000-06-12 2001-10-16 Ultratech Stepper, Inc. Thermally induced reflectivity switch for laser thermal processing
DE10104193A1 (de) * 2001-01-31 2002-08-01 Max Planck Gesellschaft Verfahren zur Herstellung einer Halbleiterstruktur mit Siliziumclustern und/oder -nanokristallen und eine Halbleiterstruktur dieser Art
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KR100491051B1 (ko) * 2002-08-31 2005-05-24 한국전자통신연구원 이중 구조의 나노점을 갖는 광전소자 및 그 제조방법
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US7132787B2 (en) * 2002-11-20 2006-11-07 The Regents Of The University Of California Multilayer polymer-quantum dot light emitting diodes and methods of making and using thereof
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US7329902B2 (en) * 2003-06-11 2008-02-12 Stmicroelectronics S.R.L. IR-light emitters based on SWNT's (single walled carbon nanotubes), semiconducting SWNTs-light emitting diodes and lasers
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US7998884B2 (en) * 2004-03-15 2011-08-16 Sharp Laboratories Of America, Inc. Method of forming a light emitting device with a nanocrystalline silicon embedded insulator film
WO2005094271A2 (en) * 2004-03-25 2005-10-13 The Regents Of The University Of California Colloidal quantum dot light emitting diodes
KR100549219B1 (ko) * 2004-04-12 2006-02-03 한국전자통신연구원 실리콘 발광소자 및 그 제조방법
US7229690B2 (en) 2004-07-26 2007-06-12 Massachusetts Institute Of Technology Microspheres including nanoparticles
US7750352B2 (en) 2004-08-10 2010-07-06 Pinion Technologies, Inc. Light strips for lighting and backlighting applications
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EP1626444A1 (en) * 2004-08-12 2006-02-15 Atomic Energy Council - Institute of Nuclear Energy Research Infra-red light-emitting device and method for preparing the same
US7115427B2 (en) 2004-08-25 2006-10-03 Atomic Energy Council - Institute Of Nuclear Energy Research Red light-emitting device and method for preparing the same
US7163902B2 (en) 2004-08-25 2007-01-16 Atomic Energy Council-Institute Of Nuclear Energy Research Infra-red light-emitting device and method for preparing the same
JP4383996B2 (ja) 2004-09-29 2009-12-16 株式会社東芝 屈折率変化装置および屈折率変化方法
US10225906B2 (en) 2004-10-22 2019-03-05 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
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KR100698014B1 (ko) 2004-11-04 2007-03-23 한국전자통신연구원 발광 소자용 실리콘 질화막, 이를 이용한 발광 소자 및발광 소자용 실리콘 질화막의 제조방법
US8891575B2 (en) * 2004-11-30 2014-11-18 Massachusetts Institute Of Technology Optical feedback structures and methods of making
KR20130007649A (ko) 2005-02-16 2013-01-18 매사추세츠 인스티튜트 오브 테크놀로지 반도체 나노결정을 포함하는 발광 디바이스
US20060202269A1 (en) * 2005-03-08 2006-09-14 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and electronic appliance having the same
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100319300B1 (ko) * 2000-03-23 2002-01-04 윤종용 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자
KR100446622B1 (ko) * 2002-01-10 2004-09-04 삼성전자주식회사 실리콘 광소자 및 이를 적용한 발광 디바이스 장치
KR100455288B1 (ko) * 2002-03-08 2004-11-06 삼성전자주식회사 실리콘 발광소자를 이용한 평판형 표시장치
US8878196B2 (en) 2005-09-27 2014-11-04 Samsung Electronics Co., Ltd. Light-emitting device comprising semiconductor nanocrystal layer free of voids and method for producing the same

Also Published As

Publication number Publication date
EP0899796A3 (en) 2001-04-04
DE69836177T2 (de) 2007-08-23
EP0899796B1 (en) 2006-10-18
DE69836177D1 (de) 2006-11-30
JPH11135830A (ja) 1999-05-21
US6157047A (en) 2000-12-05
EP0899796A2 (en) 1999-03-03
JP4071360B2 (ja) 2008-04-02

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