JP4071360B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4071360B2
JP4071360B2 JP17827898A JP17827898A JP4071360B2 JP 4071360 B2 JP4071360 B2 JP 4071360B2 JP 17827898 A JP17827898 A JP 17827898A JP 17827898 A JP17827898 A JP 17827898A JP 4071360 B2 JP4071360 B2 JP 4071360B2
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JP
Japan
Prior art keywords
semiconductor
layer
type
silicon
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP17827898A
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English (en)
Japanese (ja)
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JPH11135830A5 (enExample
JPH11135830A (ja
Inventor
忍 藤田
篤 黒部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17827898A priority Critical patent/JP4071360B2/ja
Priority to EP98306936A priority patent/EP0899796B1/en
Priority to DE69836177T priority patent/DE69836177T2/de
Priority to KR1019980035150A priority patent/KR19990086981A/ko
Priority to US09/143,106 priority patent/US6157047A/en
Publication of JPH11135830A publication Critical patent/JPH11135830A/ja
Publication of JPH11135830A5 publication Critical patent/JPH11135830A5/ja
Application granted granted Critical
Publication of JP4071360B2 publication Critical patent/JP4071360B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

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  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP17827898A 1997-08-29 1998-06-25 半導体装置 Expired - Fee Related JP4071360B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP17827898A JP4071360B2 (ja) 1997-08-29 1998-06-25 半導体装置
EP98306936A EP0899796B1 (en) 1997-08-29 1998-08-28 Light emitting semiconductor device using nanocrystals
DE69836177T DE69836177T2 (de) 1997-08-29 1998-08-28 Lichtemittierende Halbleitervorrichtung, die Nanokristalle enthält
KR1019980035150A KR19990086981A (ko) 1997-08-29 1998-08-28 반도체장치
US09/143,106 US6157047A (en) 1997-08-29 1998-08-28 Light emitting semiconductor device using nanocrystals

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-234284 1997-08-29
JP23428497 1997-08-29
JP17827898A JP4071360B2 (ja) 1997-08-29 1998-06-25 半導体装置

Publications (3)

Publication Number Publication Date
JPH11135830A JPH11135830A (ja) 1999-05-21
JPH11135830A5 JPH11135830A5 (enExample) 2005-06-09
JP4071360B2 true JP4071360B2 (ja) 2008-04-02

Family

ID=26498509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17827898A Expired - Fee Related JP4071360B2 (ja) 1997-08-29 1998-06-25 半導体装置

Country Status (5)

Country Link
US (1) US6157047A (enExample)
EP (1) EP0899796B1 (enExample)
JP (1) JP4071360B2 (enExample)
KR (1) KR19990086981A (enExample)
DE (1) DE69836177T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8653501B2 (en) 2010-06-14 2014-02-18 Canon Kabushiki Kaisha Emitting device and manufacturing method therefor

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8653501B2 (en) 2010-06-14 2014-02-18 Canon Kabushiki Kaisha Emitting device and manufacturing method therefor

Also Published As

Publication number Publication date
EP0899796A3 (en) 2001-04-04
DE69836177T2 (de) 2007-08-23
US6157047A (en) 2000-12-05
DE69836177D1 (de) 2006-11-30
EP0899796A2 (en) 1999-03-03
EP0899796B1 (en) 2006-10-18
JPH11135830A (ja) 1999-05-21
KR19990086981A (ko) 1999-12-15

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