DE69836177T2 - Lichtemittierende Halbleitervorrichtung, die Nanokristalle enthält - Google Patents
Lichtemittierende Halbleitervorrichtung, die Nanokristalle enthält Download PDFInfo
- Publication number
- DE69836177T2 DE69836177T2 DE69836177T DE69836177T DE69836177T2 DE 69836177 T2 DE69836177 T2 DE 69836177T2 DE 69836177 T DE69836177 T DE 69836177T DE 69836177 T DE69836177 T DE 69836177T DE 69836177 T2 DE69836177 T2 DE 69836177T2
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- 239000004065 semiconductor Substances 0.000 title claims description 181
- 239000002159 nanocrystal Substances 0.000 title description 2
- 239000013081 microcrystal Substances 0.000 claims description 84
- 229910052710 silicon Inorganic materials 0.000 claims description 84
- 239000010703 silicon Substances 0.000 claims description 83
- 239000000758 substrate Substances 0.000 claims description 78
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
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- 230000003647 oxidation Effects 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 15
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- 238000001228 spectrum Methods 0.000 description 5
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- -1 PIN compound Chemical class 0.000 description 3
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 238000001459 lithography Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
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- 150000003377 silicon compounds Chemical class 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
Landscapes
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23428497 | 1997-08-29 | ||
| JP23428497 | 1997-08-29 | ||
| JP17827898A JP4071360B2 (ja) | 1997-08-29 | 1998-06-25 | 半導体装置 |
| JP17827898 | 1998-06-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69836177D1 DE69836177D1 (de) | 2006-11-30 |
| DE69836177T2 true DE69836177T2 (de) | 2007-08-23 |
Family
ID=26498509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69836177T Expired - Lifetime DE69836177T2 (de) | 1997-08-29 | 1998-08-28 | Lichtemittierende Halbleitervorrichtung, die Nanokristalle enthält |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6157047A (enExample) |
| EP (1) | EP0899796B1 (enExample) |
| JP (1) | JP4071360B2 (enExample) |
| KR (1) | KR19990086981A (enExample) |
| DE (1) | DE69836177T2 (enExample) |
Families Citing this family (104)
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|---|---|---|---|---|
| WO1997049119A1 (en) * | 1996-06-19 | 1997-12-24 | Matsushita Electric Industrial Co., Ltd. | Photoelectronic material, device using the same, and method for manufacturing the same |
| US6607829B1 (en) | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
| US6207392B1 (en) | 1997-11-25 | 2001-03-27 | The Regents Of The University Of California | Semiconductor nanocrystal probes for biological applications and process for making and using such probes |
| US20050146258A1 (en) | 1999-06-02 | 2005-07-07 | Shimon Weiss | Electronic displays using optically pumped luminescent semiconductor nanocrystals |
| US6864626B1 (en) * | 1998-06-03 | 2005-03-08 | The Regents Of The University Of California | Electronic displays using optically pumped luminescent semiconductor nanocrystals |
| EP0975027A2 (en) | 1998-07-23 | 2000-01-26 | Sony Corporation | Light emitting device and process for producing the same |
| KR100696353B1 (ko) * | 1998-07-23 | 2007-03-19 | 소니 가부시끼 가이샤 | 발광 소자 및 그 제조 방법 |
| US6639354B1 (en) * | 1999-07-23 | 2003-10-28 | Sony Corporation | Light emitting device, production method thereof, and light emitting apparatus and display unit using the same |
| WO2001014250A2 (en) * | 1999-08-23 | 2001-03-01 | University Of Hawaii | Synthesis of silicon nanoparticles and metal-centered silicon nanoparticles and applications thereof |
| TW474028B (en) * | 2000-02-18 | 2002-01-21 | Ching-Fu Lin | Light-emitting device based on indirect bandgap material |
| KR100411573B1 (ko) * | 2000-03-04 | 2003-12-18 | 주식회사 엔엠씨텍 | 콴텀홀을 이용한 반도체 발광소자의 제조방법 |
| DE10011258A1 (de) * | 2000-03-08 | 2001-09-20 | Rossendorf Forschzent | Integrierter Optokoppler und Verfahren zu seiner Herstellung |
| KR100319300B1 (ko) * | 2000-03-23 | 2002-01-04 | 윤종용 | 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자 |
| US6797412B1 (en) * | 2000-04-11 | 2004-09-28 | University Of Connecticut | Full color display structures using pseudomorphic cladded quantum dot nanophosphor thin films |
| JP3806751B2 (ja) | 2000-05-23 | 2006-08-09 | 独立行政法人科学技術振興機構 | 量子サイズ効果型微小電子銃の製造方法 |
| US6303476B1 (en) * | 2000-06-12 | 2001-10-16 | Ultratech Stepper, Inc. | Thermally induced reflectivity switch for laser thermal processing |
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| KR100459894B1 (ko) * | 2002-02-09 | 2004-12-04 | 삼성전자주식회사 | 실리콘 수광소자 |
| KR100455288B1 (ko) * | 2002-03-08 | 2004-11-06 | 삼성전자주식회사 | 실리콘 발광소자를 이용한 평판형 표시장치 |
| US6759686B2 (en) * | 2002-03-15 | 2004-07-06 | Kok Wai Cheah | Silicon-based ultra-violet LED |
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| KR100491051B1 (ko) * | 2002-08-31 | 2005-05-24 | 한국전자통신연구원 | 이중 구조의 나노점을 갖는 광전소자 및 그 제조방법 |
| US7332211B1 (en) | 2002-11-07 | 2008-02-19 | Massachusetts Institute Of Technology | Layered materials including nanoparticles |
| US7132787B2 (en) * | 2002-11-20 | 2006-11-07 | The Regents Of The University Of California | Multilayer polymer-quantum dot light emitting diodes and methods of making and using thereof |
| CN1293643C (zh) * | 2002-12-30 | 2007-01-03 | 中国科学院半导体研究所 | Cmos结构的硅基发光器件 |
| US7807225B2 (en) * | 2003-01-31 | 2010-10-05 | Sharp Laboratories Of America, Inc. | High density plasma non-stoichiometric SiOxNy films |
| DE10313727B4 (de) * | 2003-03-27 | 2005-11-24 | Forschungszentrum Rossendorf E.V. | Verfahren zur Behandlung Silizium-basierter Lichtemitter |
| US7279832B2 (en) * | 2003-04-01 | 2007-10-09 | Innovalight, Inc. | Phosphor materials and illumination devices made therefrom |
| US20040252488A1 (en) * | 2003-04-01 | 2004-12-16 | Innovalight | Light-emitting ceiling tile |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6050979A (ja) * | 1983-08-30 | 1985-03-22 | Semiconductor Energy Lab Co Ltd | 発光半導体装置 |
| JPH02216877A (ja) * | 1989-02-17 | 1990-08-29 | Canon Inc | 発光ダイオード |
| US5293050A (en) * | 1993-03-25 | 1994-03-08 | International Business Machines Corporation | Semiconductor quantum dot light emitting/detecting devices |
| EP0892445B1 (en) * | 1993-11-02 | 2004-04-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device comprising an aggregate of semiconductor micro-needles |
| US5539214A (en) * | 1995-02-06 | 1996-07-23 | Regents Of The University Of California | Quantum bridges fabricated by selective etching of superlattice structures |
| GB9506735D0 (en) * | 1995-03-31 | 1995-05-24 | Univ Dundee | Light emitters and detectors |
| JP3666683B2 (ja) * | 1995-04-27 | 2005-06-29 | シャープ株式会社 | 発光素子およびその製造方法 |
| WO1997049119A1 (en) * | 1996-06-19 | 1997-12-24 | Matsushita Electric Industrial Co., Ltd. | Photoelectronic material, device using the same, and method for manufacturing the same |
-
1998
- 1998-06-25 JP JP17827898A patent/JP4071360B2/ja not_active Expired - Fee Related
- 1998-08-28 EP EP98306936A patent/EP0899796B1/en not_active Expired - Lifetime
- 1998-08-28 KR KR1019980035150A patent/KR19990086981A/ko not_active Abandoned
- 1998-08-28 US US09/143,106 patent/US6157047A/en not_active Expired - Fee Related
- 1998-08-28 DE DE69836177T patent/DE69836177T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0899796A3 (en) | 2001-04-04 |
| US6157047A (en) | 2000-12-05 |
| JP4071360B2 (ja) | 2008-04-02 |
| DE69836177D1 (de) | 2006-11-30 |
| EP0899796A2 (en) | 1999-03-03 |
| EP0899796B1 (en) | 2006-10-18 |
| JPH11135830A (ja) | 1999-05-21 |
| KR19990086981A (ko) | 1999-12-15 |
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