JP2007158067A - 半導体素子およびその製造方法、ならびに、半導体レーザおよびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 60
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 24
- 230000010355 oscillation Effects 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 238000009413 insulation Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000000638 stimulation Effects 0.000 abstract 2
- 238000004299 exfoliation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 63
- 239000013078 crystal Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
【解決手段】半導体基板の表面または裏面に電極を有する半導体素子であって、電極107と半導体基板101との間に水素が添加されていないアモルファスシリコン層106が挿入された構造である。さらには、電極105と絶縁膜103との界面、絶縁膜と半導体基板との界面にも、アモルファスシリコン層104が挿入される。また、光の発振面側に反射膜となる絶縁膜、非発振面側に多層反射膜となる絶縁膜同士を有する半導体レーザにも、同様に適用可能である。
【選択図】図1
Description
まず、図1により、本発明の第1の実施の形態である半導体素子の構造の一例を説明する。図1は、半導体素子の構造を示す。
前記第1の実施の形態では半導体素子を例に説明したが、本実施の形態では、半導体レーザを例に説明する。
Claims (10)
- 半導体基板の表面および/または裏面に電極を有する半導体素子であって、
前記電極と前記半導体基板との間に水素が添加されていないアモルファスシリコン層が挿入された構造であることを特徴とする半導体素子。 - 請求項1記載の半導体素子において、
前記電極の下部に絶縁膜が形成される場合は、前記電極と前記絶縁膜との界面、および/または前記絶縁膜と前記半導体基板との界面に水素が添加されていないアモルファスシリコン層が挿入された構造であることを特徴とする半導体素子。 - 請求項1または2記載の半導体素子において、
前記アモルファスシリコン層の膜厚は、2nm以上の厚さであることを特徴とする半導体素子。 - 半導体基板の表面および/または裏面に電極を有する半導体素子の製造方法であって、
前記半導体基板の表面および/または裏面に水素が添加されていないアモルファスシリコン層を形成する工程と、
前記アモルファスシリコン層の表面に電極を形成する工程とを有することを特徴とする半導体素子の製造方法。 - 請求項4記載の半導体素子の製造方法において、
前記電極の下部に絶縁膜が形成される場合は、前記電極と前記絶縁膜との界面、および/または前記絶縁膜と前記半導体基板との界面に水素が添加されていないアモルファスシリコン層を形成する工程を有することを特徴とする半導体素子の製造方法。 - 請求項4または5記載の半導体素子の製造方法において、
前記アモルファスシリコン層は、ECRスパッタ法により形成することを特徴とする半導体素子の製造方法。 - 半導体基板の光の発振面に反射膜を有し、前記半導体基板の光の非発振面に多層反射膜を有する半導体レーザであって、
前記反射膜と前記半導体基板との界面、および/または前記多層反射膜の反射膜同士の界面に水素が添加されていないアモルファスシリコン層が挿入された構造であることを特徴とする半導体レーザ。 - 請求項7記載の半導体レーザにおいて、
前記アモルファスシリコン層の膜厚は、2nm以上の厚さであることを特徴とする半導体レーザ。 - 半導体基板の光の発振面に反射膜を有し、前記半導体基板の光の非発振面に多層反射膜を有する半導体レーザの製造方法であって、
前記反射膜と前記半導体基板との界面、および/または前記多層反射膜の反射膜同士の界面に水素が添加されていないアモルファスシリコン層を形成する工程を有することを特徴とする半導体レーザの製造方法。 - 請求項9記載の半導体レーザの製造方法において、
前記アモルファスシリコン層は、ECRスパッタ法により形成することを特徴とする半導体レーザの製造方法。
Priority Applications (4)
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JP2005351834A JP2007158067A (ja) | 2005-12-06 | 2005-12-06 | 半導体素子およびその製造方法、ならびに、半導体レーザおよびその製造方法 |
DE102006027656A DE102006027656A1 (de) | 2005-12-06 | 2006-06-14 | Halbleiterelement, Fertigungsprozess für dieses, Halbleiterlaser und Fertigungsprozess für diesen |
US11/454,832 US20070126119A1 (en) | 2005-12-06 | 2006-06-19 | Semiconductor element, production process thereof, semiconductor laser and production process thereof |
KR1020060077619A KR100818869B1 (ko) | 2005-12-06 | 2006-08-17 | 반도체 소자 및 그 제조 방법, 및, 반도체 레이저 및 그제조 방법 |
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JP2005351834A JP2007158067A (ja) | 2005-12-06 | 2005-12-06 | 半導体素子およびその製造方法、ならびに、半導体レーザおよびその製造方法 |
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US (1) | US20070126119A1 (ja) |
JP (1) | JP2007158067A (ja) |
KR (1) | KR100818869B1 (ja) |
DE (1) | DE102006027656A1 (ja) |
Citations (6)
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JPH07312353A (ja) * | 1994-05-17 | 1995-11-28 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JPH1126863A (ja) * | 1997-07-02 | 1999-01-29 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザおよびその製造方法 |
JP2000174379A (ja) * | 1998-12-04 | 2000-06-23 | Mitsubishi Chemicals Corp | 化合物半導体発光素子 |
JP2002314197A (ja) * | 2001-04-12 | 2002-10-25 | Sony Corp | 半導体レーザ素子 |
JP2004128297A (ja) * | 2002-10-04 | 2004-04-22 | Sony Corp | 半導体レーザ素子の製造方法 |
JP2005064328A (ja) * | 2003-08-18 | 2005-03-10 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
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TW468253B (en) * | 1997-01-13 | 2001-12-11 | Hitachi Ltd | Semiconductor memory device |
EP0898345A3 (en) * | 1997-08-13 | 2004-01-02 | Mitsubishi Chemical Corporation | Compound semiconductor light emitting device and method of fabricating the same |
JP4071360B2 (ja) * | 1997-08-29 | 2008-04-02 | 株式会社東芝 | 半導体装置 |
JP4341124B2 (ja) * | 1999-11-25 | 2009-10-07 | ソニー株式会社 | 半導体装置の製造方法 |
JP2003037081A (ja) * | 2001-07-26 | 2003-02-07 | Mitsubishi Electric Corp | 電極構造およびその製造方法 |
JP3753994B2 (ja) | 2002-03-11 | 2006-03-08 | 松下電器産業株式会社 | 半導体装置の製造方法 |
DE10248205B4 (de) * | 2002-10-16 | 2007-03-08 | Infineon Technologies Ag | Ohmsche Kontaktanordnung und Herstellverfahren |
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- 2005-12-06 JP JP2005351834A patent/JP2007158067A/ja active Pending
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2006
- 2006-06-14 DE DE102006027656A patent/DE102006027656A1/de not_active Withdrawn
- 2006-06-19 US US11/454,832 patent/US20070126119A1/en not_active Abandoned
- 2006-08-17 KR KR1020060077619A patent/KR100818869B1/ko not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07312353A (ja) * | 1994-05-17 | 1995-11-28 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JPH1126863A (ja) * | 1997-07-02 | 1999-01-29 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザおよびその製造方法 |
JP2000174379A (ja) * | 1998-12-04 | 2000-06-23 | Mitsubishi Chemicals Corp | 化合物半導体発光素子 |
JP2002314197A (ja) * | 2001-04-12 | 2002-10-25 | Sony Corp | 半導体レーザ素子 |
JP2004128297A (ja) * | 2002-10-04 | 2004-04-22 | Sony Corp | 半導体レーザ素子の製造方法 |
JP2005064328A (ja) * | 2003-08-18 | 2005-03-10 | Matsushita Electric Ind Co Ltd | 半導体レーザおよびその製造方法 |
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DE102006027656A1 (de) | 2007-06-14 |
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US20070126119A1 (en) | 2007-06-07 |
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