KR19980079644A - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR19980079644A KR19980079644A KR1019980001881A KR19980001881A KR19980079644A KR 19980079644 A KR19980079644 A KR 19980079644A KR 1019980001881 A KR1019980001881 A KR 1019980001881A KR 19980001881 A KR19980001881 A KR 19980001881A KR 19980079644 A KR19980079644 A KR 19980079644A
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- Prior art keywords
- insulating layer
- layer
- nitride oxide
- silicon
- gate insulating
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 187
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000012535 impurity Substances 0.000 claims abstract description 39
- 238000009826 distribution Methods 0.000 claims abstract description 36
- 150000004767 nitrides Chemical class 0.000 claims abstract description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 75
- 229910052710 silicon Inorganic materials 0.000 claims description 75
- 239000010703 silicon Substances 0.000 claims description 75
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 75
- 239000007789 gas Substances 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 3
- 239000010410 layer Substances 0.000 description 220
- 238000009792 diffusion process Methods 0.000 description 22
- 229910052796 boron Inorganic materials 0.000 description 19
- 238000002513 implantation Methods 0.000 description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 230000035515 penetration Effects 0.000 description 10
- -1 boron ions Chemical class 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000002265 prevention Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000036039 immunity Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000001546 nitrifying effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (15)
- 반도체 기판상에 형성된 질화산화물로 된 게이트 절연층과, 상기 게이트 절연층상에 형성된 게이트 전극과, 상기 게이트 전극의 양측의 상기 반도체 기판에 형성되어 불순물을 함유하는 소스/드레인 영역과, 상기 반도체 기판 표면중 상기 소스/드레인 영역을 덮고 또한 상기 게이트 절연층과는 다른 층 두께 방향의 질소 농도 분포를 갖는 질화산화 절연층을 갖는 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서, 상기 반도체 기판은 실리콘 기판이고, 상기 게이트 절연층은 제 1 질화산화 실리콘 층이고, 상기 질화산화 절연층은 제 1 질화산화 실리콘과는 다른 제 2 질화산화 실리콘 층인 것을 특징으로 하는 반도체 기판.
- 제 1 항에 있어서, 상기 질화산화 절연층의 상기 질소 농도는 상기 반도체 기판과 상기 질화산화 절연층의 계면에 편석하고 있는 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서, 상기 게이트 절연층내의 질소 농도 분포는 상기 반도체 기판과 상기 질화산화 절연층의 계면에 편석하지 않고, 층 두께 방향으로 완만하게 변화하거나 또는 층 두께 방향으로 실질적으로 균일한 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서, 상기 게이트 절연층내의 질소는 상기 게이트 전극과 상기 게이트 절연층의 계면에 편석하고 있는 것을 특징으로 하는 반도체 장치.
- 제 1 항에 있어서, 상기 게이트 절연층내의 질소는 상기 반도체 기판의 경계로부터 내측에 걸쳐서 1 × 103계수/nm 이하로 변화하고 있는 것을 특징으로 하는 반도체 장치.
- 반도체 기판상에 형성되고, 또한 질소 농도가 층 두께 방향으로 완만하게 변화하거나 또는 층 두께 방향으로 실질적으로 균일한 질화산화물로 된 게이트 절연층과, 상기 게이트 절연층상에 형성된 게이트 전극과, 상기 게이트 전극의 양측의 상기 반도체 기판에 형성된 소스/드레인 영역과, 상기 반도체 기판 표면중 상기 소스/드레인 영역을 덮은 절연층을 갖는 것을 특징으로 하는 반도체 장치.
- 제 7 항에 있어서, 상기 반도체 기판은 실리콘 기판이고, 상기 질화산화물은 질화산화 실리콘이고, 상기 절연층은 산화 실리콘으로 형성되어 있는 것을 특징으로 하는 반도체 장치.
- 반도체 기판의 주면에 질화산화물로 된 게이트 절연층을 형성하는 공정과, 상기 게이트 절연층상에 전극을 형성하는 공정과, 상기 게이트 양측의 상기 반도체 기판의 주면에 상기 게이트 절연층과는 다른 층 두께 방향의 질소 농도 분포를 갖는 질화산화 절연층을 형성하는 공정과, 상기 게이트 전극을 마스크로 사용하여 상기 반도체 기판에 불순물을 도입하여 소스 영역 및 드레인 영역을 형성하는 공정을 구비한 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 9 항에 있어서, 상기 게이트 절연층을 구성하는 상기 질화산화물은 가열된 산화질소 가스 분위기중에 상기 반도체 기판의 주면을 노출하여 형성되고, 상기 질화산화물중의 질소 농도분이 층 두께 방향으로 완만하게 변화하거나 또는 층 두께 방향으로 실질적으로 균일하게 된 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 9 항에 있어서, 상기 게이트 절연층을 형성하는 공정에 있어서, 상기 질화산화물중의 질소 농도를 층 두께 방향에 대해 광범하게 분포시킨 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 9 항에 있어서, 상기 게이트 절연층을 형성하는 공정에 있어서, 상기 질화산화물중의 질소 농도를 상기 게이트 절연층과 상기 게이트 전극의 계면에 편석시키는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 9 항에 있어서, 상기 질화산화 절연층은 질화산화 실리콘 층의 경우에, 질화산화 실리콘 층을 성장한 후에, 상기 게이트 전극의 양측의 상기 질화산화 실리콘 층을 질소 함유 가스 분위기에 노출시킴으로써 상기 질화산화 절연층과 상기 반도체 기판의 계면에 상기 질화산화 실리콘 층내의 질소 농도를 편석하는 공정을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 13 항에 있어서, 상기 질소 함유 가스가 NH3인 경우에, 상기 질화산화 실리콘 층을 상기 질소 함유 가스에 노출한 후에, 상기 질화산화 실리콘 층을 질화산소 가스에 노출하여 상기 질화산화 실리콘 층내의 수소를 감소시키는 공정을 더 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제 9 항에 있어서, 상기 질화산화 절연층은 게이트 전극의 양측에 산화 실리콘 층을 성장한 후에, 상기 게이트 전극의 양측의 상기 산화 실리콘 층을 질소 함유 가스 분위기에 노출시킴으로써 형성하는 것을 특징으로 하는 반도체 장치의 제조 방법.
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JP9055275A JPH10256539A (ja) | 1997-03-10 | 1997-03-10 | 半導体装置及びその製造方法 |
JP55275 | 1997-03-10 | ||
JP97-055275 | 1997-03-10 |
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KR19980079644A true KR19980079644A (ko) | 1998-11-25 |
KR100270776B1 KR100270776B1 (ko) | 2000-12-01 |
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US (1) | US6215163B1 (ko) |
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JP4992957B2 (ja) * | 2004-02-10 | 2012-08-08 | セイコーエプソン株式会社 | 絶縁膜、半導体素子、電子デバイスおよび電子機器 |
JP4511307B2 (ja) * | 2004-02-10 | 2010-07-28 | セイコーエプソン株式会社 | ゲート絶縁膜、半導体素子、電子デバイスおよび電子機器 |
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- 1997-03-10 JP JP9055275A patent/JPH10256539A/ja active Pending
- 1997-12-29 US US08/998,989 patent/US6215163B1/en not_active Expired - Lifetime
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KR100776175B1 (ko) * | 2006-08-29 | 2007-11-12 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
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JPH10256539A (ja) | 1998-09-25 |
US6215163B1 (en) | 2001-04-10 |
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