KR102731814B1 - 진공 처리 방법 - Google Patents

진공 처리 방법 Download PDF

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Publication number
KR102731814B1
KR102731814B1 KR1020217027244A KR20217027244A KR102731814B1 KR 102731814 B1 KR102731814 B1 KR 102731814B1 KR 1020217027244 A KR1020217027244 A KR 1020217027244A KR 20217027244 A KR20217027244 A KR 20217027244A KR 102731814 B1 KR102731814 B1 KR 102731814B1
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South Korea
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gas
cleaning
etching
reaction product
titanium
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Korean (ko)
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KR20220000982A (ko
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노조무 요시오카
가즈마사 오쿠마
다카오 아라세
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주식회사 히타치하이테크
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    • H01L21/32136—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020217027244A 2020-06-25 2020-06-25 진공 처리 방법 Active KR102731814B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/024933 WO2021260869A1 (ja) 2020-06-25 2020-06-25 真空処理方法

Publications (2)

Publication Number Publication Date
KR20220000982A KR20220000982A (ko) 2022-01-04
KR102731814B1 true KR102731814B1 (ko) 2024-11-20

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Family Applications (1)

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KR1020217027244A Active KR102731814B1 (ko) 2020-06-25 2020-06-25 진공 처리 방법

Country Status (6)

Country Link
US (1) US11961719B2 (https=)
JP (2) JPWO2021260869A1 (https=)
KR (1) KR102731814B1 (https=)
CN (1) CN114097064B (https=)
TW (1) TWI807350B (https=)
WO (1) WO2021260869A1 (https=)

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JP2000509211A (ja) 1996-04-26 2000-07-18 アルバック テクノロジーズ インコーポレーテッド 半導体ウェハー表面からフォトレジストをクリーニングし、ストリッピングする方法
US20040069610A1 (en) * 2002-09-26 2004-04-15 Arno Jose I. System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers
JP2006173301A (ja) * 2004-12-15 2006-06-29 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 非シリコン系膜の成膜装置のクリーニング方法

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JP2000150387A (ja) 1998-11-18 2000-05-30 Applied Materials Inc 配管系構造及び配管系ユニット
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Publication number Priority date Publication date Assignee Title
KR100221899B1 (ko) * 1995-05-24 1999-09-15 가네꼬 히사시 진공처리장치 세정방법
JP2000509211A (ja) 1996-04-26 2000-07-18 アルバック テクノロジーズ インコーポレーテッド 半導体ウェハー表面からフォトレジストをクリーニングし、ストリッピングする方法
US20040069610A1 (en) * 2002-09-26 2004-04-15 Arno Jose I. System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers
JP2006173301A (ja) * 2004-12-15 2006-06-29 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 非シリコン系膜の成膜装置のクリーニング方法

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WO2021260869A1 (ja) 2021-12-30
JP7356562B2 (ja) 2023-10-04
TWI807350B (zh) 2023-07-01
CN114097064B (zh) 2025-08-15
US20230122903A1 (en) 2023-04-20
KR20220000982A (ko) 2022-01-04
JP2023015220A (ja) 2023-01-31
JPWO2021260869A1 (https=) 2021-12-30
TW202201606A (zh) 2022-01-01
US11961719B2 (en) 2024-04-16
CN114097064A (zh) 2022-02-25

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