WO2021260869A1 - 真空処理方法 - Google Patents

真空処理方法 Download PDF

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Publication number
WO2021260869A1
WO2021260869A1 PCT/JP2020/024933 JP2020024933W WO2021260869A1 WO 2021260869 A1 WO2021260869 A1 WO 2021260869A1 JP 2020024933 W JP2020024933 W JP 2020024933W WO 2021260869 A1 WO2021260869 A1 WO 2021260869A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
cleaning
vacuum
titanium
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/024933
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
望 吉岡
一暢 大隈
高男 荒瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Priority to JP2021524468A priority Critical patent/JPWO2021260869A1/ja
Priority to KR1020217027244A priority patent/KR102731814B1/ko
Priority to CN202080020786.7A priority patent/CN114097064B/zh
Priority to US17/435,127 priority patent/US11961719B2/en
Priority to PCT/JP2020/024933 priority patent/WO2021260869A1/ja
Priority to TW110122756A priority patent/TWI807350B/zh
Publication of WO2021260869A1 publication Critical patent/WO2021260869A1/ja
Priority to JP2022178673A priority patent/JP7356562B2/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Definitions

  • a cylindrical quartz chamber 107 is installed in the discharge unit 102, and an ICP coil 108 is installed outside the quartz chamber 107.
  • the ICP coil 108 is connected to the high frequency power supply 110 via the matching unit 109, and the plasma processing apparatus 100 can generate plasma 1011 by an inductively coupled plasma (ICP) discharge method.
  • the frequency of the high frequency power of the high frequency power supply 110 shall be a frequency band of several tens of MHz such as 13.56 MHz.
  • a mixed gas of argon (Ar) gas and nitrogen (N 2 ) gas is supplied to the discharge unit 102 to perform discharge, and the radical (or plasma) generated by dissociation at this time is introduced into the treatment chamber 104 and into the treatment chamber.
  • Cleaning is performed by reacting with the deposited titanium (Ti) -based reaction product and heating with an IR lamp 1018 to remove the gas. By this cleaning, the titanium (Ti) -based reaction product adhering to and accumulating in the chamber can be efficiently removed.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
PCT/JP2020/024933 2020-06-25 2020-06-25 真空処理方法 Ceased WO2021260869A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2021524468A JPWO2021260869A1 (https=) 2020-06-25 2020-06-25
KR1020217027244A KR102731814B1 (ko) 2020-06-25 2020-06-25 진공 처리 방법
CN202080020786.7A CN114097064B (zh) 2020-06-25 2020-06-25 真空处理方法
US17/435,127 US11961719B2 (en) 2020-06-25 2020-06-25 Vacuum processing method
PCT/JP2020/024933 WO2021260869A1 (ja) 2020-06-25 2020-06-25 真空処理方法
TW110122756A TWI807350B (zh) 2020-06-25 2021-06-22 真空處理方法
JP2022178673A JP7356562B2 (ja) 2020-06-25 2022-11-08 真空処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/024933 WO2021260869A1 (ja) 2020-06-25 2020-06-25 真空処理方法

Publications (1)

Publication Number Publication Date
WO2021260869A1 true WO2021260869A1 (ja) 2021-12-30

Family

ID=79282103

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2020/024933 Ceased WO2021260869A1 (ja) 2020-06-25 2020-06-25 真空処理方法

Country Status (6)

Country Link
US (1) US11961719B2 (https=)
JP (2) JPWO2021260869A1 (https=)
KR (1) KR102731814B1 (https=)
CN (1) CN114097064B (https=)
TW (1) TWI807350B (https=)
WO (1) WO2021260869A1 (https=)

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Also Published As

Publication number Publication date
JP7356562B2 (ja) 2023-10-04
TWI807350B (zh) 2023-07-01
CN114097064B (zh) 2025-08-15
KR102731814B1 (ko) 2024-11-20
US20230122903A1 (en) 2023-04-20
KR20220000982A (ko) 2022-01-04
JP2023015220A (ja) 2023-01-31
JPWO2021260869A1 (https=) 2021-12-30
TW202201606A (zh) 2022-01-01
US11961719B2 (en) 2024-04-16
CN114097064A (zh) 2022-02-25

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