JP2017143186A - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
- Publication number
- JP2017143186A JP2017143186A JP2016023693A JP2016023693A JP2017143186A JP 2017143186 A JP2017143186 A JP 2017143186A JP 2016023693 A JP2016023693 A JP 2016023693A JP 2016023693 A JP2016023693 A JP 2016023693A JP 2017143186 A JP2017143186 A JP 2017143186A
- Authority
- JP
- Japan
- Prior art keywords
- processing apparatus
- vacuum processing
- lamp
- wafer
- plate member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
前記窓部材の電磁波を透過させる部材がこの窓部材の下面及び前記板部材を囲む側面を構成して前記ランプからの電磁波により前記板部材が加熱されることを特徴とする真空処理装置とする。
以下、本発明の実施例を図面に基づいて詳細に説明する。なお、同一符号は同一構成要素を示す。
Claims (9)
- 減圧された内側に処理用のガスが供給される処理室を内部に備えた真空容器と、前記処理室内側の下部に配置され処理用のウエハが上面に載せられる試料台と、前記処理室上方に配置されその内部で処理用のガスを用いてプラズマが形成されるプラズマ形成室と、前記試料台の上面の上方であって前記処理室と前記プラズマ形成室との間に配置され前記処理用のガスが導入される複数の導入孔を備えた誘電体製の板部材と、この板部材の外周側でこれを囲んで配置され前記試料を加熱するためのランプ及び前記処理室の内側に面して前記ランプからの電磁波を透過させる部材で構成されたリング状の窓部材とを備えた真空処理装置であって、
前記窓部材の電磁波を透過させる部材がこの窓部材の下面及び前記板部材を囲む側面を構成して前記ランプからの電磁波により前記板部材が加熱されることを特徴とする真空処理装置。 - 請求項1に記載の真空処理装置であって、
前記窓部材の下面及び前記板部材を囲む側面が電磁波を透過させる一体の部材で構成されたことを特徴とする真空処理装置。 - 請求項1に記載の真空処理装置であって、
前記窓部材の前記板部材を囲む側面を構成する側壁の上端部に前記処理室の内部と外部との間を気密に封止するシール部材と、前記ランプと前記シール部材との間に配置され前記電磁波から当該シール部材を遮るカバーを備えたことを特徴とする真空処理装置。 - 請求項3に記載の真空処理装置であって、
前記側壁の内部に配置され前記電磁波の前記シール部材への伝達を抑制する部材とを備えたことを特徴とする真空処理装置。 - 請求項1乃至4の何れか一項に記載の真空処理装置であって、
前記導入孔からの前記処理用のガスの導入と前記ランプによる前試料の加熱とが交互に繰り返されるように制御されることを特徴とする真空処理装置。 - 請求項1に記載の真空処理装置において、
前記板部材は、第1板部材と第2板部材とを有し、前記第1板部材の導入孔と前記第2板部材の導入孔とは平面的に異なった位置に配置されていることを特徴とする真空処理装置。 - 請求項1に記載の真空処理装置において、
ICPコイルが前記プラズマ形成室を取り巻いて設置されていることを特徴とする真空処理装置。 - 請求項1に記載の真空処理装置において、
前記窓部材は、前記試料に面する下面と前記板部材に面する側面とを有し、前記試料の加熱分布を調整するために前記下面と前記側面との角部がレンズの機能を備えていることを特徴とする真空処理装置。 - 請求項8に記載の真空処理装置において、
前記窓部材の前記角部は、前記ランプに面する側の曲率と前記試料に面する側の曲率が異なることを特徴とする真空処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016023693A JP6625891B2 (ja) | 2016-02-10 | 2016-02-10 | 真空処理装置 |
US15/072,392 US10290472B2 (en) | 2016-02-10 | 2016-03-17 | Vacuum processing apparatus |
US16/378,783 US10937635B2 (en) | 2016-02-10 | 2019-04-09 | Vacuum processing apparatus |
US17/160,801 US11557463B2 (en) | 2016-02-10 | 2021-01-28 | Vacuum processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016023693A JP6625891B2 (ja) | 2016-02-10 | 2016-02-10 | 真空処理装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019214960A Division JP6825069B2 (ja) | 2019-11-28 | 2019-11-28 | 真空処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017143186A true JP2017143186A (ja) | 2017-08-17 |
JP2017143186A5 JP2017143186A5 (ja) | 2019-03-07 |
JP6625891B2 JP6625891B2 (ja) | 2019-12-25 |
Family
ID=59498305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016023693A Active JP6625891B2 (ja) | 2016-02-10 | 2016-02-10 | 真空処理装置 |
Country Status (2)
Country | Link |
---|---|
US (3) | US10290472B2 (ja) |
JP (1) | JP6625891B2 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020100227A1 (ja) * | 2018-11-14 | 2020-05-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びそれを用いた被処理試料の処理方法 |
KR20200066589A (ko) | 2018-11-27 | 2020-06-10 | 주식회사 히타치하이테크 | 플라스마 처리 장치 및 그것을 이용한 시료의 처리 방법 |
JPWO2020157954A1 (ja) * | 2019-02-01 | 2021-02-18 | 株式会社日立ハイテク | エッチング方法およびプラズマ処理装置 |
JP2021132125A (ja) * | 2020-02-20 | 2021-09-09 | 株式会社日立ハイテク | プラズマ処理装置 |
KR20220000982A (ko) | 2020-06-25 | 2022-01-04 | 주식회사 히타치하이테크 | 진공 처리 방법 |
WO2022003803A1 (ja) * | 2020-06-30 | 2022-01-06 | 株式会社日立ハイテク | エッチング処理方法およびエッチング処理装置 |
JP7092959B1 (ja) | 2022-03-23 | 2022-06-28 | Sppテクノロジーズ株式会社 | 基板処理装置 |
JP7245378B1 (ja) | 2022-03-23 | 2023-03-23 | Sppテクノロジーズ株式会社 | 基板処理装置 |
US11915951B2 (en) | 2016-10-28 | 2024-02-27 | Hitachi High-Tech Corporation | Plasma processing method |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
KR102563925B1 (ko) * | 2018-08-31 | 2023-08-04 | 삼성전자 주식회사 | 반도체 제조 장치 |
KR102529845B1 (ko) * | 2018-09-26 | 2023-05-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 프로세싱 챔버용 열 전도성 스페이서 |
CN115004329A (zh) | 2019-11-27 | 2022-09-02 | 应用材料公司 | 用于选择性间隙填充的双等离子体预清洁 |
KR20220103781A (ko) * | 2019-11-27 | 2022-07-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 다수의 플라즈마 유닛들을 갖는 프로세싱 챔버 |
US20230118576A1 (en) * | 2019-12-20 | 2023-04-20 | Hitachi High-Tech Corporation | Wafer processing method and plasma processing apparatus |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002083803A (ja) * | 2000-09-07 | 2002-03-22 | Yac Co Ltd | エッチング装置やアッシング装置といったようなドライプロセッシング装置 |
JP2002100571A (ja) * | 2000-09-22 | 2002-04-05 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2008166653A (ja) * | 2007-01-05 | 2008-07-17 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2015185594A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社日立ハイテクノロジーズ | エッチング装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62130275A (ja) | 1985-12-02 | 1987-06-12 | Anelva Corp | 放射線導入窓 |
JPH04293781A (ja) | 1991-03-20 | 1992-10-19 | Hitachi Ltd | マイクロ波プラズマ処理装置 |
KR100605884B1 (ko) | 1998-11-11 | 2006-08-01 | 동경 엘렉트론 주식회사 | 표면 처리 방법 및 장치 |
US20070267143A1 (en) * | 2006-05-16 | 2007-11-22 | Applied Materials, Inc. | In situ cleaning of CVD system exhaust |
US7967996B2 (en) * | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Process for wafer backside polymer removal and wafer front side photoresist removal |
US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
US9548223B2 (en) * | 2011-12-23 | 2017-01-17 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US20150129131A1 (en) * | 2013-11-14 | 2015-05-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor processing apparatus and pre-clean system |
-
2016
- 2016-02-10 JP JP2016023693A patent/JP6625891B2/ja active Active
- 2016-03-17 US US15/072,392 patent/US10290472B2/en active Active
-
2019
- 2019-04-09 US US16/378,783 patent/US10937635B2/en active Active
-
2021
- 2021-01-28 US US17/160,801 patent/US11557463B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002083803A (ja) * | 2000-09-07 | 2002-03-22 | Yac Co Ltd | エッチング装置やアッシング装置といったようなドライプロセッシング装置 |
JP2002100571A (ja) * | 2000-09-22 | 2002-04-05 | Tokyo Electron Ltd | 処理装置及び処理方法 |
JP2008166653A (ja) * | 2007-01-05 | 2008-07-17 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2015185594A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社日立ハイテクノロジーズ | エッチング装置 |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11915951B2 (en) | 2016-10-28 | 2024-02-27 | Hitachi High-Tech Corporation | Plasma processing method |
WO2020100227A1 (ja) * | 2018-11-14 | 2020-05-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びそれを用いた被処理試料の処理方法 |
KR20200060294A (ko) | 2018-11-14 | 2020-05-29 | 주식회사 히타치하이테크 | 플라스마 처리 장치 및 그것을 이용한 피처리 시료의 처리 방법 |
CN111436219B (zh) * | 2018-11-14 | 2023-09-19 | 株式会社日立高新技术 | 等离子处理装置以及利用其的被处理样品的处理方法 |
US11276579B2 (en) | 2018-11-14 | 2022-03-15 | Hitachi High-Tech Corporation | Substrate processing method and plasma processing apparatus |
TWI706461B (zh) * | 2018-11-14 | 2020-10-01 | 日商日立全球先端科技股份有限公司 | 電漿處理裝置及使用其之被處理樣品之處理方法 |
JP6708798B1 (ja) * | 2018-11-14 | 2020-06-10 | 株式会社日立ハイテク | プラズマ処理装置及びそれを用いた被処理試料の処理方法 |
CN111436219A (zh) * | 2018-11-14 | 2020-07-21 | 株式会社日立高新技术 | 等离子处理装置以及利用其的被处理样品的处理方法 |
KR20200066589A (ko) | 2018-11-27 | 2020-06-10 | 주식회사 히타치하이테크 | 플라스마 처리 장치 및 그것을 이용한 시료의 처리 방법 |
JPWO2020157954A1 (ja) * | 2019-02-01 | 2021-02-18 | 株式会社日立ハイテク | エッチング方法およびプラズマ処理装置 |
US11515167B2 (en) | 2019-02-01 | 2022-11-29 | Hitachi High-Tech Corporation | Plasma etching method and plasma processing apparatus |
JP2021132125A (ja) * | 2020-02-20 | 2021-09-09 | 株式会社日立ハイテク | プラズマ処理装置 |
JP7244447B2 (ja) | 2020-02-20 | 2023-03-22 | 株式会社日立ハイテク | プラズマ処理装置 |
KR20220000982A (ko) | 2020-06-25 | 2022-01-04 | 주식회사 히타치하이테크 | 진공 처리 방법 |
US11961719B2 (en) | 2020-06-25 | 2024-04-16 | Hitachi High-Tech Corporation | Vacuum processing method |
US11901192B2 (en) | 2020-06-30 | 2024-02-13 | Hitachi High-Tech Corporation | Etching processing method and etching processing apparatus |
JP7212444B2 (ja) | 2020-06-30 | 2023-01-25 | 株式会社日立ハイテク | エッチング処理方法およびエッチング処理装置 |
JPWO2022003803A1 (ja) * | 2020-06-30 | 2022-01-06 | ||
WO2022003803A1 (ja) * | 2020-06-30 | 2022-01-06 | 株式会社日立ハイテク | エッチング処理方法およびエッチング処理装置 |
JP7092959B1 (ja) | 2022-03-23 | 2022-06-28 | Sppテクノロジーズ株式会社 | 基板処理装置 |
JP2023143582A (ja) * | 2022-03-23 | 2023-10-06 | Sppテクノロジーズ株式会社 | 基板処理装置 |
JP2023140597A (ja) * | 2022-03-23 | 2023-10-05 | Sppテクノロジーズ株式会社 | 基板処理装置 |
WO2023181486A1 (ja) * | 2022-03-23 | 2023-09-28 | Sppテクノロジーズ株式会社 | 基板処理装置 |
JP7245378B1 (ja) | 2022-03-23 | 2023-03-23 | Sppテクノロジーズ株式会社 | 基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6625891B2 (ja) | 2019-12-25 |
US20190237302A1 (en) | 2019-08-01 |
US10937635B2 (en) | 2021-03-02 |
US20210151298A1 (en) | 2021-05-20 |
US10290472B2 (en) | 2019-05-14 |
US11557463B2 (en) | 2023-01-17 |
US20170229290A1 (en) | 2017-08-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2017143186A (ja) | 真空処理装置 | |
KR101948592B1 (ko) | 플라스마 처리 장치의 운전 방법 | |
JP5842750B2 (ja) | 成膜方法、成膜装置及び記憶媒体 | |
TWI656557B (zh) | 藉由電漿調控之降低邊緣隆起面板 | |
JP6488164B2 (ja) | プラズマ処理装置 | |
US10192720B2 (en) | Plasma processing apparatus | |
TWI650793B (zh) | 介電體窗、天線、以及電漿處理裝置 | |
KR102499909B1 (ko) | 플라즈마 처리 방법 및 플라즈마 처리 장치 | |
KR20160041778A (ko) | 피처리체를 처리하는 방법 | |
KR20160094306A (ko) | 피처리체를 처리하는 방법 | |
JP7358301B2 (ja) | ウエハガス放出のためのプラズマエンハンストアニールチャンバ | |
US10950416B2 (en) | Chamber seasoning to improve etch uniformity by reducing chemistry | |
JP2015119119A (ja) | 基板処理方法および基板処理装置 | |
TW201717264A (zh) | 用以在混合模式處理操作中分別施加帶電的電漿成分與紫外光的系統及方法 | |
JP6920469B2 (ja) | 光照射装置 | |
JP2011040461A (ja) | バッフル板及びプラズマ処理装置 | |
JP6825069B2 (ja) | 真空処理装置 | |
TWI778081B (zh) | 排氣板及電漿處理裝置 | |
JP7452992B2 (ja) | プラズマ処理装置およびプラズマ処理装置の運転方法 | |
TW201523703A (zh) | 電漿處理裝置及電漿處理方法 | |
TWI807350B (zh) | 真空處理方法 | |
JP2015088663A (ja) | 基板処理装置及び基板処理方法 | |
KR101597054B1 (ko) | 플라즈마 처리 장치 | |
JP2001085417A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JPS63104423A (ja) | プラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190123 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190123 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20191011 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191029 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191128 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6625891 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |