TWI656557B - 藉由電漿調控之降低邊緣隆起面板 - Google Patents

藉由電漿調控之降低邊緣隆起面板 Download PDF

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TWI656557B
TWI656557B TW104105028A TW104105028A TWI656557B TW I656557 B TWI656557 B TW I656557B TW 104105028 A TW104105028 A TW 104105028A TW 104105028 A TW104105028 A TW 104105028A TW I656557 B TWI656557 B TW I656557B
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河盛元
李光德道格拉斯
巴拉蘇拔馬尼安葛尼斯
羅莎亞凡利斯君卡洛斯
西蒙斯馬丁傑
段子青
葉正約翰
金秉憲
荊雷
樂尼格歐克
慕古提達卡
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美商應用材料股份有限公司
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Abstract

在此揭示的實施例關於用以改善膜均勻性的面板。半導體製程設備包括一載座、一邊緣環與一面板，該面板具有具不同孔洞密度的不同區域。面板具有一內區域與一外區域，外區域圍繞內區域。相較於外區域而言，內區域具有形成穿過內區域的更大的孔洞的密度。內區域的尺寸與正被處理的基材相應，而外區域的尺寸與邊緣環相應。

Description

藉由電漿調控之降低邊緣隆起面板
在此揭示的實施例大致上關於半導體製程中的微粒減少與膜均勻性的改善。更詳細地說，在此揭示的實施例關於經由電漿調控面板的邊緣隆起降低。
減少半導體製程期間的不期望的微粒的產生對於形成不含缺陷的微電子元件而言是重要的。各種製程產生微粒，並且已經使用不同的設備與方法來減少或消除微粒產生。例如，一圖案化膜的沉積與該圖案化膜在後續的移除會在靠近基材的邊緣處由於斜邊邊緣缺陷而更可能產生微粒。
在此實例中，一種減少微粒產生的方法是利用邊緣環，邊緣環可在沉積/蝕刻製程期間保護基材的邊緣。邊緣環對於減少由於斜邊邊緣缺陷造成的微粒產生大致上是有效的；然而，後續的膜沉積製程會由於靠近基材的邊緣處的電漿場的改變而遭受厚度非均勻性。因此，在特定製程中，邊緣環的存在會藉由改變基材的表面上的膜的厚度而負面地影響膜的均勻性。
所以，此技藝中需要一種設備，該設備可減少半導體製程期間的微粒產生，同時可維持或改善基材的表面上的膜厚度均勻性。
在一實施例中，提供一種用以處理一基材的設備。該設備包括一腔室主體，該腔室主體界定一製程空間。一載座可設置在該製程空間內，且一邊緣環可設置在該載座上。一面板可在該製程空間中耦接到該腔室主體而和該載座相對。該面板包含：一第一區域，該第一區域具有形成穿過該第一區域的一第一密度的孔洞；及一第二區域，該第二區域具有形成穿過該第二區域的一第二密度的孔洞。該第二區域可圍繞該第一區域，且該第二密度的孔洞可小於該第一密度的孔洞。
在另一實施例中，提供一種用以處理一基材的設備。該設備包括一腔室主體，該腔室主體界定一製程空間，且一載座可設置在該製程空間內。一氮化鋁邊緣環可設置在該載座上，且一鋁面板可在該製程空間中耦接到該腔室主體而和該載座相對。該面板包含一圓形區域，該圓形區域具有形成穿過該圓形區域的一第一密度的孔洞。其中該第一密度的孔洞可介於約20孔洞/平方吋與約100孔洞/平方吋之間。一環形區域可具有形成穿過該環形區域的一第二密度的孔洞，該環形區域圍繞該第一區域，且該第二密度的孔洞可介於約5孔洞/平方吋與約95孔洞/平方吋之間。
在又另一實施例中，提供一種面板設備。該面板設 備包括一圓形鋁主體。該主體的一圓形區域可具有形成穿過該圓形區域的一第一密度的孔洞。該第一密度的孔洞可介於約20孔洞/平方吋與約100孔洞/平方吋之間。該主體的一環形區域可具有形成穿過該環形區域的一第二密度的孔洞，該環形區域圍繞該第一區域。該第二密度的孔洞可介於約5孔洞/平方吋與約95孔洞/平方吋之間。
100‧‧‧製程腔室
102‧‧‧腔室主體
104‧‧‧載座
106‧‧‧邊緣環
108‧‧‧基材
110‧‧‧面板
112‧‧‧耦接設備
114‧‧‧功率源
116‧‧‧氣體源
118‧‧‧製程空間
120‧‧‧孔洞
122‧‧‧內區域
124‧‧‧外區域
126‧‧‧凸耳
130‧‧‧內徑
132‧‧‧外徑
134‧‧‧厚度
136‧‧‧距離
138‧‧‧距離
202‧‧‧直徑
204‧‧‧外徑
可藉由參考實施例來詳細暸解本發明的上述特徵，本發明的說明簡短地在前面概述過，其中該些實施例的一些實施例在附圖中示出。但是應注意的是，附圖僅示出本發明的典型實施例，因此附圖不應被視為會對本發明範疇構成限制，這是因為本發明可允許其他等效實施例。
第1圖示出根據在此所述之一實施例的製程腔室的示意剖視圖。
第2圖示出根據在此所述之一實施例的面板的仰視圖。
第3圖示出根據在此所述之一實施例的第2圖的面板的部分剖視圖。
為促進了解，在可能時使用相同的元件符號來表示該等圖式共有的相同元件。可設想出的是一實施例的元件與特徵可有利地被併入到其他實施例中而不需特別詳述。
在此揭示的實施例關於用以改善膜均勻性的面板。半導體製程設備包括一載座、一邊緣環與一面板，該面板具 有具不同孔洞密度的不同區域。面板具有一內區域與一外區域，外區域圍繞內區域。相較於外區域而言，內區域具有形成穿過內區域的更大的孔洞的密度。內區域的尺寸與正被處理的基材相應，而外區域的尺寸與邊緣環相應。
第1圖示出一製程腔室100的示意剖視圖。腔室100包括一界定製程空間118的腔室主體102、一載座104、一邊緣環106與一面板110。腔室主體102由金屬材料(諸如不銹鋼或鋁)製成。一功率源114與一氣體源116耦接到腔室主體102。功率源114可以是設以在腔室100的製程空間118內形成電容耦合電漿的RF功率源。氣體源116輸送製程與其他氣體到腔室100。製程氣體透過面板110或噴頭被散佈到製程空間118。
適當的製程腔室的一實例是可從美國加州聖大克勞拉市的應用材料公司獲得之PRODUCER®系統。可設想出的是來自其他製造業者的其他適當建構的系統可有利地使用在此所述之實施例或該些實施例的各種態樣。
面板110設置在製程空間118內且耦接到腔室主體102。面板110的一凸耳126或其他類似的結構設以和一耦接設備112接合。耦接設備112使得面板110和腔室主體102相隔且將面板110定位在製程空間118內。面板110與耦接設備112被螺栓或螺絲或其他類似的固定設備固定在一起。
載座104在製程期間可移動地設置在製程空間118內且設以支撐基材108與邊緣環106。載座104亦可包括一加熱器以加熱基材108。基材108設置在載座104上，並且基材 108的一邊緣區域被邊緣環106的一部分覆蓋住，其中邊緣環106的該部分延伸在基材108的該邊緣上方而環繞基材108的整個周邊。基材108的一實例可以是200mm基材、300mm基材或450mm基材。邊緣環106的尺寸可容納正被處理的基材108的尺寸。
邊緣環106的形狀為環形，並且邊緣環106的一部分覆蓋住基材108的邊緣。在一實例中，邊緣環106的內徑130介於約190mm與約450mm之間，諸如介於約290mm與約300mm之間。邊緣環106的外徑132介於約250mm與約600mm之間，諸如約370mm。邊緣環106的厚度134介於約70mil與約110mil之間，諸如介於約80mil與約100mil之間，諸如約90mil。邊緣環106由介電材料製成(諸如氧化物或氮化物，例如氮化鋁)。
在製程期間，邊緣環106與面板110之間的距離136介於約140mil與約1030mil之間，諸如約210mil。載座104支撐表面與面板110之間的距離138介於約250mil與約1100mil之間，諸如約300mil。製程間隔是會影響基材108上所形成的膜的均勻性的許多因素之一。邊緣環106的存在增加了靠近基材108的邊緣處的電場，這會造成更大的離子通量。所增加的靠近基材108的邊緣與邊緣環106處的離子通量造成製程期間增加的沉積速率，這造成了靠近基材108的邊緣處的更厚的膜。
面板110具有一內區域122與一外區域124，內區域122與外區域124具不同孔洞120密度以容許藉由腔室100 中邊緣環106的存在的電漿調控。孔洞120延伸穿過面板110並從氣體源116輸送氣體到製程空間118。在運作時，面板110電容地耦合到功率源114，並且RF功率使得氣體在製程區域118中形成一電漿。在另一實施例中，可利用一遠端電漿源來提供電漿到製程區域118。
內區域122具有形成穿過內區域122之一第一密度的孔洞120，並且外區域124具有形成穿過外區域124之一第二密度的孔洞120。外區域124中之第二密度的孔洞120比內區域122中之第一密度的孔洞120小至少20%。例如，內區域122中之第一密度的孔洞120介於約20孔洞/平方吋與約100孔洞/平方吋之間(諸如約50孔洞/平方吋)，並且外區域124中之第二密度的孔洞介於約5孔洞/平方吋與約95孔洞/平方吋之間(諸如約30孔洞/平方吋)。在一實施例中，第二密度的孔洞120是內區域中之第一密度的孔洞120的介於約60%與約80%之間，諸如約70%。
面板110的內區域122對準在基材108上方，並且面板110的外區域124對準在邊緣環106上方。外區域124的第二密度的孔洞120減少了被提供在邊緣環106上方且靠近基材108的邊緣處的氣體的量。所以，可降低或消除邊緣環106的電漿調控效應(即增加的電場與離子通量)。
在一實例中，利用遍佈整個面板具有恆定孔洞密度的面板，相較於遍佈面板110具有變化孔洞密度的面板110所提供的均勻性輪廓，來檢視所沉積的膜的均勻性輪廓。恆定孔洞密度的面板係沉積具有具約7.59%的變化的厚度均勻 性的膜。使內區域122比外區域124具有更大的孔洞120密度的面板110係提供具1.54%的變化的膜厚度均勻性。因此，面板110藉由調控靠近基材108的邊緣處的電漿輪廓而增加了膜的均勻性。因而，邊緣環106的負面效應被面板110的孔洞120密度輪廓消除或減少了。
第2圖是面板110的仰視圖。內區域122的形狀是圓形且具有比外區域124的孔洞120密度更大的孔洞120密度。內區域122的直徑202與邊緣環106的內徑130相應。例如，內區域122的直徑202介於約250mm與約350mm之間，諸如介於約290mm與約300mm之間。外區域124的形狀是環形或類似環，並且圍繞內區域122。外區域124的外徑204與邊緣環106的外徑132相應。例如，外區域124的外徑204介於約200mm與約450mm之間，諸如約300mm。
面板110的內區域122與外區域124的尺寸係分別佔據由基材108與邊緣環106界定的類似的區域。因此，內區域122的尺寸類似基材108，並且外區域124的尺寸類似邊緣環106。
可藉由變更沿著面板110的外區域124中的圓形線之孔洞120的間隔來改變孔洞120的間隔。例如，相較於外區域124中的孔洞120的間隔，內區域122中的孔洞120的間隔彼此更緊密。因此，外區域124中的孔洞120的密度小於內區域中的孔洞120的密度。在一實施例中，孔洞120被定位在多個同心環上。
第3圖是第2圖的面板110的部分剖視圖。內區域 122具有比外區域124的孔洞120密度更大的第一孔洞120密度。在內與外區域122、124中的孔洞具有類似的尺寸。依此方式，外區域124中的孔洞120密度的減少係減少了外區域124上的電漿密度。然而，可設想出的是孔洞120的尺寸可在內區域122與外區域124之間變化，以為了進一步界定不同區域122、124上的電漿密度。
簡言之，製程腔室100包括載座104，基材108與邊緣環106設置在載座104上。面板110設置在製程空間118內而和載座104相對。面板110具有尺寸類似基材108的內區域122與尺寸類似邊緣環106的外區域124。內區域120的第一孔洞120密度大於外區域124的孔洞120密度。內區域122與外區域124的變化的孔洞120密度使得靠近邊緣環106與基材108邊緣處的電漿調控成為可能，這提供了改善的遍佈基材108的表面的膜厚度均勻性。
儘管上述說明是導向本發明的實施例，可設想出本發明的其他與進一步的實施例而不悖離本發明的基本範疇，並且本發明的範疇係由隨附的申請專利範圍所決定。

Claims (14)

  1. 一種用以處理一基材的設備，包含：一腔室主體，該腔室主體界定一製程空間；一載座，該載座設置在該製程空間內；一邊緣環，該邊緣環設置在該載座上；及一面板，該面板在該製程空間中耦接到該腔室主體而和該載座相對，該面板包含：一第一區域，該第一區域具有形成穿過該第一區域的一第一均勻密度的孔洞；及一第二區域，該第二區域具有形成穿過該第二區域的一第二均勻密度的孔洞，且該第二區域圍繞該第一區域，其中該第二均勻密度的孔洞不超過該第一均勻密度的孔洞的80%，該第一區域中的孔洞的一孔洞尺寸與該第二區域中的孔洞的一孔洞尺寸相同，該第二區域的一內徑對準在該邊緣環的一內徑上方，以及該第二區域的一外徑對準在該邊緣環的一外徑上方。
  2. 如請求項1所述之設備，其中該第一區域的形狀是圓形，且該第一區域的尺寸與一正被處理的基材相應。
  3. 如請求項2所述之設備，其中該第二區域的形狀是環形，且該第二區域的尺寸與該邊緣環相應。
  4. 如請求項1所述之設備，其中該第一均勻密度的孔洞是 介於20孔洞/平方吋與100孔洞/平方吋之間。
  5. 如請求項4所述之設備，其中該第二均勻密度的孔洞是介於5孔洞/平方吋與95孔洞/平方吋之間。
  6. 如請求項1所述之設備，其中該第二均勻密度的孔洞是該第一均勻密度的孔洞的60%與80%之間。
  7. 如請求項6所述之設備，其中該些孔洞被定位在多個同心環上。
  8. 如請求項1所述之設備，其中該面板的該第一區域的一直徑與該邊緣環的該內徑相應。
  9. 如請求項1所述之設備，其中該面板包含一鋁材料。
  10. 如請求項1所述之設備，其中該邊緣環包含一介電材料。
  11. 如請求項10所述之設備，其中該邊緣環包含氮化鋁。
  12. 如請求項1所述之設備，其中在一製程位置中的該載座與該面板之間的一距離是介於250mil與350mil之間。
  13. 如請求項1所述之設備，其中在一製程位置中的該邊緣 環與該面板之間的一距離是介於190mil與230mil之間。
  14. 一種用以處理一基材的設備，包含：一腔室主體，該腔室主體界定一製程空間；一載座，該載座設置在該製程空間內；一氮化鋁邊緣環，該氮化鋁邊緣環設置在該載座上；及一鋁面板，該鋁面板在該製程空間中耦接到該腔室主體而和該載座相對，該面板包含：該面板的一圓形區域，該面板的該圓形區域具有形成穿過該圓形區域的一第一均勻密度的孔洞，其中該第一均勻密度的孔洞為50孔洞/平方吋；及一環形區域，該環形區域具有形成穿過該環形區域的一第二均勻密度的孔洞，該環形區域圍繞該圓形區域，其中該第二均勻密度的孔洞為30孔洞/平方吋，該圓形區域中的孔洞的一孔洞尺寸與該環形區域中的孔洞的一孔洞尺寸相同，該環形區域的一內徑對準在該邊緣環的一內徑上方，以及該環形區域的一外徑對準在該邊緣環的一外徑上方。
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