CN114097064B - 真空处理方法 - Google Patents

真空处理方法

Info

Publication number
CN114097064B
CN114097064B CN202080020786.7A CN202080020786A CN114097064B CN 114097064 B CN114097064 B CN 114097064B CN 202080020786 A CN202080020786 A CN 202080020786A CN 114097064 B CN114097064 B CN 114097064B
Authority
CN
China
Prior art keywords
gas
reaction product
etching
cleaning
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080020786.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN114097064A (zh
Inventor
吉冈望
大隈一畅
荒濑高男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Publication of CN114097064A publication Critical patent/CN114097064A/zh
Application granted granted Critical
Publication of CN114097064B publication Critical patent/CN114097064B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202080020786.7A 2020-06-25 2020-06-25 真空处理方法 Active CN114097064B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/024933 WO2021260869A1 (ja) 2020-06-25 2020-06-25 真空処理方法

Publications (2)

Publication Number Publication Date
CN114097064A CN114097064A (zh) 2022-02-25
CN114097064B true CN114097064B (zh) 2025-08-15

Family

ID=79282103

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080020786.7A Active CN114097064B (zh) 2020-06-25 2020-06-25 真空处理方法

Country Status (6)

Country Link
US (1) US11961719B2 (https=)
JP (2) JPWO2021260869A1 (https=)
KR (1) KR102731814B1 (https=)
CN (1) CN114097064B (https=)
TW (1) TWI807350B (https=)
WO (1) WO2021260869A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5817578A (en) * 1995-05-24 1998-10-06 Nec Corporation Method of cleaning vacuum processing apparatus
JP2006173301A (ja) * 2004-12-15 2006-06-29 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 非シリコン系膜の成膜装置のクリーニング方法
JP2018041886A (ja) * 2016-09-09 2018-03-15 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164330A (en) * 1991-04-17 1992-11-17 Intel Corporation Etchback process for tungsten utilizing a NF3/AR chemistry
JPH0529278A (ja) * 1991-07-19 1993-02-05 Nippon Telegr & Teleph Corp <Ntt> 半導体の加工方法
JP3099441B2 (ja) 1991-08-08 2000-10-16 日本電気株式会社 特殊材料ガスの供給方法
JP3681998B2 (ja) * 1994-08-25 2005-08-10 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
JP3247270B2 (ja) 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
JP3684624B2 (ja) 1995-08-02 2005-08-17 ソニー株式会社 反応ガス供給装置
JP3684797B2 (ja) 1997-12-04 2005-08-17 株式会社デンソー 気相成長方法および気相成長装置
KR100278277B1 (ko) * 1998-06-23 2001-02-01 김영환 실리사이드의콘택저항개선을위한반도체소자제조방법
JP2000150387A (ja) 1998-11-18 2000-05-30 Applied Materials Inc 配管系構造及び配管系ユニット
JP4359965B2 (ja) 1999-07-27 2009-11-11 東京エレクトロン株式会社 成膜装置
WO2002007194A2 (en) 2000-07-18 2002-01-24 Showa Denko K.K. Cleaning gas for semiconductor production equipment
US20030056388A1 (en) 2000-07-18 2003-03-27 Hiromoto Ohno Cleaning gas for semiconductor production equipment
US20040235303A1 (en) 2001-05-04 2004-11-25 Lam Research Corporation Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US20030005943A1 (en) 2001-05-04 2003-01-09 Lam Research Corporation High pressure wafer-less auto clean for etch applications
US6815362B1 (en) 2001-05-04 2004-11-09 Lam Research Corporation End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy
JP2003273082A (ja) 2002-03-14 2003-09-26 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2003303777A (ja) 2002-04-10 2003-10-24 Ulvac Japan Ltd プラズマ成膜装置及びクリーニング方法
US7204913B1 (en) 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
US20040014327A1 (en) 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US6841141B2 (en) * 2002-09-26 2005-01-11 Advanced Technology Materials, Inc. System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers
KR20090015054A (ko) 2006-04-10 2009-02-11 솔베이 플루오르 게엠베하 에칭 방법
JP4810355B2 (ja) 2006-08-24 2011-11-09 富士通セミコンダクター株式会社 処理ガス供給方法、基板処理方法、半導体装置の製造方法、処理ガス供給装置、基板処理装置、および記録媒体
JP2008060171A (ja) 2006-08-29 2008-03-13 Taiyo Nippon Sanso Corp 半導体処理装置のクリーニング方法
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
CA2690697A1 (en) * 2009-01-27 2010-07-27 Air Products And Chemicals, Inc. Selective etching and formation of xenon difluoride
JP2011100820A (ja) 2009-11-05 2011-05-19 Hitachi Kokusai Electric Inc 基板処理装置
KR101630234B1 (ko) 2009-11-17 2016-06-15 주성엔지니어링(주) 공정챔버의 세정방법
KR20130004238A (ko) 2009-11-27 2013-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5530794B2 (ja) 2010-04-28 2014-06-25 株式会社日立ハイテクノロジーズ 真空処理装置及びプラズマ処理方法
JP5434970B2 (ja) 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
JP2012243958A (ja) 2011-05-19 2012-12-10 Hitachi High-Technologies Corp プラズマ処理方法
US9533332B2 (en) 2011-10-06 2017-01-03 Applied Materials, Inc. Methods for in-situ chamber clean utilized in an etching processing chamber
JP2015037134A (ja) 2013-08-14 2015-02-23 大陽日酸株式会社 炭化珪素除去装置、及び炭化珪素除去方法
US9824865B2 (en) * 2014-03-05 2017-11-21 Lam Research Corporation Waferless clean in dielectric etch process
US9508561B2 (en) 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
JP6818402B2 (ja) * 2015-07-17 2021-01-20 株式会社日立ハイテク プラズマ処理装置
US10096487B2 (en) * 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
JP6169666B2 (ja) 2015-10-20 2017-07-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6499980B2 (ja) 2016-01-04 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理方法
WO2017136216A1 (en) * 2016-02-01 2017-08-10 Retro-Semi Technologies, Llc Cleaning apparatus for an exhaust path of a process reaction chamber
JP6625891B2 (ja) 2016-02-10 2019-12-25 株式会社日立ハイテクノロジーズ 真空処理装置
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR102490700B1 (ko) 2017-03-27 2023-01-26 주식회사 히타치하이테크 플라스마 처리 방법
WO2018179251A1 (ja) 2017-03-30 2018-10-04 株式会社日立国際電気 半導体装置の製造方法
DE112017000726B4 (de) * 2017-09-21 2023-06-29 Hitachi High-Tech Corporation Verfahren zur Herstellung eines magnetischen Tunnelübergangselements und induktiv gekoppelte Plasmabearbeitungsvorrichtung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5817578A (en) * 1995-05-24 1998-10-06 Nec Corporation Method of cleaning vacuum processing apparatus
JP2006173301A (ja) * 2004-12-15 2006-06-29 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 非シリコン系膜の成膜装置のクリーニング方法
JP2018041886A (ja) * 2016-09-09 2018-03-15 株式会社日立ハイテクノロジーズ エッチング方法およびエッチング装置

Also Published As

Publication number Publication date
WO2021260869A1 (ja) 2021-12-30
JP7356562B2 (ja) 2023-10-04
TWI807350B (zh) 2023-07-01
KR102731814B1 (ko) 2024-11-20
US20230122903A1 (en) 2023-04-20
KR20220000982A (ko) 2022-01-04
JP2023015220A (ja) 2023-01-31
JPWO2021260869A1 (https=) 2021-12-30
TW202201606A (zh) 2022-01-01
US11961719B2 (en) 2024-04-16
CN114097064A (zh) 2022-02-25

Similar Documents

Publication Publication Date Title
US10020184B2 (en) Method for cleaning substrate
KR102482619B1 (ko) 에칭 방법
CN105719949A (zh) 选择性氮化物蚀刻
JP2016157940A (ja) 窒化シリコンのエッチング時における超高選択比を達成するための方法
TW201335991A (zh) 電漿蝕刻方法
WO2010047308A1 (ja) プラズマエッチング方法及びプラズマエッチング装置
TWI766907B (zh) 電漿處理裝置及電漿處理方法
TWI695429B (zh) 電漿處理方法
TW202249078A (zh) 電漿處理裝置及電漿處理方法
JP3798491B2 (ja) ドライエッチング方法
KR20180124773A (ko) 플라즈마 처리 장치의 세정 방법
TW202223986A (zh) 蝕刻裝置及蝕刻方法
US10056236B2 (en) Plasma processing method
CN114097064B (zh) 真空处理方法
WO2003081655A1 (fr) Procédé d&#39;attaque chimique au plasma
TW202436637A (zh) 表面金屬氧化物之電化學還原
JP6763750B2 (ja) 被処理体を処理する方法
JPH0855698A (ja) プラズマ処理装置及びプラズマ処理方法
JP2022021226A (ja) プラズマ処理方法及びプラズマ処理装置
CN110581050B (zh) 处理方法和等离子体处理装置
JP7232135B2 (ja) ドライエッチング方法及びデバイスの製造方法
TWI825103B (zh) 被處理體之處理方法及電漿處理裝置
JP5725602B2 (ja) エッチング処理装置およびエッチング処理方法
WO2003081656A1 (en) Method of plasma etching
JPH05234881A (ja) アッシング装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant