TWI807350B - 真空處理方法 - Google Patents

真空處理方法 Download PDF

Info

Publication number
TWI807350B
TWI807350B TW110122756A TW110122756A TWI807350B TW I807350 B TWI807350 B TW I807350B TW 110122756 A TW110122756 A TW 110122756A TW 110122756 A TW110122756 A TW 110122756A TW I807350 B TWI807350 B TW I807350B
Authority
TW
Taiwan
Prior art keywords
gas
etching
titanium
processing chamber
nitrogen
Prior art date
Application number
TW110122756A
Other languages
English (en)
Chinese (zh)
Other versions
TW202201606A (zh
Inventor
吉岡望
大隈一暢
荒瀬高男
Original Assignee
日商日立全球先端科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立全球先端科技股份有限公司 filed Critical 日商日立全球先端科技股份有限公司
Publication of TW202201606A publication Critical patent/TW202201606A/zh
Application granted granted Critical
Publication of TWI807350B publication Critical patent/TWI807350B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW110122756A 2020-06-25 2021-06-22 真空處理方法 TWI807350B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2020/024933 2020-06-25
PCT/JP2020/024933 WO2021260869A1 (ja) 2020-06-25 2020-06-25 真空処理方法

Publications (2)

Publication Number Publication Date
TW202201606A TW202201606A (zh) 2022-01-01
TWI807350B true TWI807350B (zh) 2023-07-01

Family

ID=79282103

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110122756A TWI807350B (zh) 2020-06-25 2021-06-22 真空處理方法

Country Status (6)

Country Link
US (1) US11961719B2 (https=)
JP (2) JPWO2021260869A1 (https=)
KR (1) KR102731814B1 (https=)
CN (1) CN114097064B (https=)
TW (1) TWI807350B (https=)
WO (1) WO2021260869A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201117892A (en) * 2009-11-17 2011-06-01 Jusung Eng Co Ltd Cleaning method of process chamber
TW201217500A (en) * 2010-07-12 2012-05-01 Central Glass Co Ltd Dry etching agent and dry etching method
TW201546876A (zh) * 2014-03-11 2015-12-16 應用材料股份有限公司 在針對半導體應用之整合群集系統中形成互連結構的方法
TW201714312A (zh) * 2008-09-01 2017-04-16 半導體能源研究所股份有限公司 半導體裝置和其製造方法
CN110402482A (zh) * 2017-03-30 2019-11-01 株式会社国际电气 半导体装置的制造方法、清洁方法、基板处理装置和程序

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164330A (en) * 1991-04-17 1992-11-17 Intel Corporation Etchback process for tungsten utilizing a NF3/AR chemistry
JPH0529278A (ja) * 1991-07-19 1993-02-05 Nippon Telegr & Teleph Corp <Ntt> 半導体の加工方法
JP3099441B2 (ja) 1991-08-08 2000-10-16 日本電気株式会社 特殊材料ガスの供給方法
JP3681998B2 (ja) * 1994-08-25 2005-08-10 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
JP3247270B2 (ja) 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
JPH08319586A (ja) * 1995-05-24 1996-12-03 Nec Yamagata Ltd 真空処理装置のクリーニング方法
JP3684624B2 (ja) 1995-08-02 2005-08-17 ソニー株式会社 反応ガス供給装置
JP3684797B2 (ja) 1997-12-04 2005-08-17 株式会社デンソー 気相成長方法および気相成長装置
KR100278277B1 (ko) * 1998-06-23 2001-02-01 김영환 실리사이드의콘택저항개선을위한반도체소자제조방법
JP2000150387A (ja) 1998-11-18 2000-05-30 Applied Materials Inc 配管系構造及び配管系ユニット
JP4359965B2 (ja) 1999-07-27 2009-11-11 東京エレクトロン株式会社 成膜装置
WO2002007194A2 (en) 2000-07-18 2002-01-24 Showa Denko K.K. Cleaning gas for semiconductor production equipment
US20030056388A1 (en) 2000-07-18 2003-03-27 Hiromoto Ohno Cleaning gas for semiconductor production equipment
US20040235303A1 (en) 2001-05-04 2004-11-25 Lam Research Corporation Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US20030005943A1 (en) 2001-05-04 2003-01-09 Lam Research Corporation High pressure wafer-less auto clean for etch applications
US6815362B1 (en) 2001-05-04 2004-11-09 Lam Research Corporation End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy
JP2003273082A (ja) 2002-03-14 2003-09-26 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP2003303777A (ja) 2002-04-10 2003-10-24 Ulvac Japan Ltd プラズマ成膜装置及びクリーニング方法
US7204913B1 (en) 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
US20040014327A1 (en) 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US6841141B2 (en) * 2002-09-26 2005-01-11 Advanced Technology Materials, Inc. System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers
JP2006173301A (ja) * 2004-12-15 2006-06-29 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 非シリコン系膜の成膜装置のクリーニング方法
KR20090015054A (ko) 2006-04-10 2009-02-11 솔베이 플루오르 게엠베하 에칭 방법
JP4810355B2 (ja) 2006-08-24 2011-11-09 富士通セミコンダクター株式会社 処理ガス供給方法、基板処理方法、半導体装置の製造方法、処理ガス供給装置、基板処理装置、および記録媒体
JP2008060171A (ja) 2006-08-29 2008-03-13 Taiyo Nippon Sanso Corp 半導体処理装置のクリーニング方法
CA2690697A1 (en) * 2009-01-27 2010-07-27 Air Products And Chemicals, Inc. Selective etching and formation of xenon difluoride
JP2011100820A (ja) 2009-11-05 2011-05-19 Hitachi Kokusai Electric Inc 基板処理装置
KR20130004238A (ko) 2009-11-27 2013-01-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5530794B2 (ja) 2010-04-28 2014-06-25 株式会社日立ハイテクノロジーズ 真空処理装置及びプラズマ処理方法
JP2012243958A (ja) 2011-05-19 2012-12-10 Hitachi High-Technologies Corp プラズマ処理方法
US9533332B2 (en) 2011-10-06 2017-01-03 Applied Materials, Inc. Methods for in-situ chamber clean utilized in an etching processing chamber
JP2015037134A (ja) 2013-08-14 2015-02-23 大陽日酸株式会社 炭化珪素除去装置、及び炭化珪素除去方法
US9824865B2 (en) * 2014-03-05 2017-11-21 Lam Research Corporation Waferless clean in dielectric etch process
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
JP6818402B2 (ja) * 2015-07-17 2021-01-20 株式会社日立ハイテク プラズマ処理装置
US10096487B2 (en) * 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
JP6169666B2 (ja) 2015-10-20 2017-07-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6499980B2 (ja) 2016-01-04 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理方法
WO2017136216A1 (en) * 2016-02-01 2017-08-10 Retro-Semi Technologies, Llc Cleaning apparatus for an exhaust path of a process reaction chamber
JP6625891B2 (ja) 2016-02-10 2019-12-25 株式会社日立ハイテクノロジーズ 真空処理装置
JP6817752B2 (ja) * 2016-09-09 2021-01-20 株式会社日立ハイテク エッチング方法およびエッチング装置
JP6630649B2 (ja) * 2016-09-16 2020-01-15 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR102490700B1 (ko) 2017-03-27 2023-01-26 주식회사 히타치하이테크 플라스마 처리 방법
DE112017000726B4 (de) * 2017-09-21 2023-06-29 Hitachi High-Tech Corporation Verfahren zur Herstellung eines magnetischen Tunnelübergangselements und induktiv gekoppelte Plasmabearbeitungsvorrichtung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201714312A (zh) * 2008-09-01 2017-04-16 半導體能源研究所股份有限公司 半導體裝置和其製造方法
TW201117892A (en) * 2009-11-17 2011-06-01 Jusung Eng Co Ltd Cleaning method of process chamber
TW201217500A (en) * 2010-07-12 2012-05-01 Central Glass Co Ltd Dry etching agent and dry etching method
TW201546876A (zh) * 2014-03-11 2015-12-16 應用材料股份有限公司 在針對半導體應用之整合群集系統中形成互連結構的方法
CN110402482A (zh) * 2017-03-30 2019-11-01 株式会社国际电气 半导体装置的制造方法、清洁方法、基板处理装置和程序

Also Published As

Publication number Publication date
WO2021260869A1 (ja) 2021-12-30
JP7356562B2 (ja) 2023-10-04
CN114097064B (zh) 2025-08-15
KR102731814B1 (ko) 2024-11-20
US20230122903A1 (en) 2023-04-20
KR20220000982A (ko) 2022-01-04
JP2023015220A (ja) 2023-01-31
JPWO2021260869A1 (https=) 2021-12-30
TW202201606A (zh) 2022-01-01
US11961719B2 (en) 2024-04-16
CN114097064A (zh) 2022-02-25

Similar Documents

Publication Publication Date Title
TWI657499B (zh) Etching method
KR102482619B1 (ko) 에칭 방법
CN105719949A (zh) 选择性氮化物蚀刻
TWI779753B (zh) 電漿處理裝置及被處理體處理方法
WO2010047308A1 (ja) プラズマエッチング方法及びプラズマエッチング装置
CN105914146A (zh) 用于在蚀刻氮化硅时实现超高选择比的方法
JP2018056248A (ja) プラズマ処理装置の運転方法
TWI766907B (zh) 電漿處理裝置及電漿處理方法
TWI695429B (zh) 電漿處理方法
CN104303273B (zh) 蚀刻方法和等离子体处理装置
JP3798491B2 (ja) ドライエッチング方法
TW201909272A (zh) 電漿處理裝置之洗淨方法
TWI807350B (zh) 真空處理方法
WO2003081655A1 (fr) Procédé d&#39;attaque chimique au plasma
TW201703098A (zh) 上部電極之表面處理方法、電漿處理裝置及上部電極
JP6763750B2 (ja) 被処理体を処理する方法
JP2007027564A (ja) 表面処理方法及び表面処理装置
JP2009194380A (ja) 基板製造方法
JP6165518B2 (ja) プラズマ処理方法および真空処理装置
JP2022021226A (ja) プラズマ処理方法及びプラズマ処理装置
JP6259610B2 (ja) プラズマ処理装置およびプラズマ処理方法
CN110581050B (zh) 处理方法和等离子体处理装置
JP5725602B2 (ja) エッチング処理装置およびエッチング処理方法
JPH05234881A (ja) アッシング装置
JPH04107823A (ja) 半導体装置のパターン形成方法