JPWO2021260869A1 - - Google Patents
Info
- Publication number
- JPWO2021260869A1 JPWO2021260869A1 JP2021524468A JP2021524468A JPWO2021260869A1 JP WO2021260869 A1 JPWO2021260869 A1 JP WO2021260869A1 JP 2021524468 A JP2021524468 A JP 2021524468A JP 2021524468 A JP2021524468 A JP 2021524468A JP WO2021260869 A1 JPWO2021260869 A1 JP WO2021260869A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
- H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022178673A JP7356562B2 (ja) | 2020-06-25 | 2022-11-08 | 真空処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/024933 WO2021260869A1 (ja) | 2020-06-25 | 2020-06-25 | 真空処理方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022178673A Division JP7356562B2 (ja) | 2020-06-25 | 2022-11-08 | 真空処理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2021260869A1 true JPWO2021260869A1 (https=) | 2021-12-30 |
Family
ID=79282103
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021524468A Pending JPWO2021260869A1 (https=) | 2020-06-25 | 2020-06-25 | |
| JP2022178673A Active JP7356562B2 (ja) | 2020-06-25 | 2022-11-08 | 真空処理方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022178673A Active JP7356562B2 (ja) | 2020-06-25 | 2022-11-08 | 真空処理方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11961719B2 (https=) |
| JP (2) | JPWO2021260869A1 (https=) |
| KR (1) | KR102731814B1 (https=) |
| CN (1) | CN114097064B (https=) |
| TW (1) | TWI807350B (https=) |
| WO (1) | WO2021260869A1 (https=) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08115886A (ja) * | 1994-08-25 | 1996-05-07 | Tokyo Electron Ltd | 処理装置及びドライクリーニング方法 |
| JP2006173301A (ja) * | 2004-12-15 | 2006-06-29 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 非シリコン系膜の成膜装置のクリーニング方法 |
| JP2009533853A (ja) * | 2006-04-10 | 2009-09-17 | ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング | エッチング方法 |
| JP2012243958A (ja) * | 2011-05-19 | 2012-12-10 | Hitachi High-Technologies Corp | プラズマ処理方法 |
| JP2017063186A (ja) * | 2015-08-19 | 2017-03-30 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | タングステンおよび他の金属の原子層エッチング |
| JP2018041886A (ja) * | 2016-09-09 | 2018-03-15 | 株式会社日立ハイテクノロジーズ | エッチング方法およびエッチング装置 |
| JP2018046216A (ja) * | 2016-09-16 | 2018-03-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5164330A (en) * | 1991-04-17 | 1992-11-17 | Intel Corporation | Etchback process for tungsten utilizing a NF3/AR chemistry |
| JPH0529278A (ja) * | 1991-07-19 | 1993-02-05 | Nippon Telegr & Teleph Corp <Ntt> | 半導体の加工方法 |
| JP3099441B2 (ja) | 1991-08-08 | 2000-10-16 | 日本電気株式会社 | 特殊材料ガスの供給方法 |
| JP3681998B2 (ja) * | 1994-08-25 | 2005-08-10 | 東京エレクトロン株式会社 | 処理装置及びドライクリーニング方法 |
| JPH08319586A (ja) * | 1995-05-24 | 1996-12-03 | Nec Yamagata Ltd | 真空処理装置のクリーニング方法 |
| JP3684624B2 (ja) | 1995-08-02 | 2005-08-17 | ソニー株式会社 | 反応ガス供給装置 |
| JP3684797B2 (ja) | 1997-12-04 | 2005-08-17 | 株式会社デンソー | 気相成長方法および気相成長装置 |
| KR100278277B1 (ko) * | 1998-06-23 | 2001-02-01 | 김영환 | 실리사이드의콘택저항개선을위한반도체소자제조방법 |
| JP2000150387A (ja) | 1998-11-18 | 2000-05-30 | Applied Materials Inc | 配管系構造及び配管系ユニット |
| JP4359965B2 (ja) | 1999-07-27 | 2009-11-11 | 東京エレクトロン株式会社 | 成膜装置 |
| WO2002007194A2 (en) | 2000-07-18 | 2002-01-24 | Showa Denko K.K. | Cleaning gas for semiconductor production equipment |
| US20030056388A1 (en) | 2000-07-18 | 2003-03-27 | Hiromoto Ohno | Cleaning gas for semiconductor production equipment |
| US20040235303A1 (en) | 2001-05-04 | 2004-11-25 | Lam Research Corporation | Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy |
| US20030005943A1 (en) | 2001-05-04 | 2003-01-09 | Lam Research Corporation | High pressure wafer-less auto clean for etch applications |
| US6815362B1 (en) | 2001-05-04 | 2004-11-09 | Lam Research Corporation | End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy |
| JP2003273082A (ja) | 2002-03-14 | 2003-09-26 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP2003303777A (ja) | 2002-04-10 | 2003-10-24 | Ulvac Japan Ltd | プラズマ成膜装置及びクリーニング方法 |
| US7204913B1 (en) | 2002-06-28 | 2007-04-17 | Lam Research Corporation | In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control |
| US20040014327A1 (en) | 2002-07-18 | 2004-01-22 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
| US6841141B2 (en) * | 2002-09-26 | 2005-01-11 | Advanced Technology Materials, Inc. | System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers |
| JP4810355B2 (ja) | 2006-08-24 | 2011-11-09 | 富士通セミコンダクター株式会社 | 処理ガス供給方法、基板処理方法、半導体装置の製造方法、処理ガス供給装置、基板処理装置、および記録媒体 |
| JP2008060171A (ja) | 2006-08-29 | 2008-03-13 | Taiyo Nippon Sanso Corp | 半導体処理装置のクリーニング方法 |
| US9082857B2 (en) | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
| CA2690697A1 (en) * | 2009-01-27 | 2010-07-27 | Air Products And Chemicals, Inc. | Selective etching and formation of xenon difluoride |
| JP2011100820A (ja) | 2009-11-05 | 2011-05-19 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| KR101630234B1 (ko) | 2009-11-17 | 2016-06-15 | 주성엔지니어링(주) | 공정챔버의 세정방법 |
| KR20130004238A (ko) | 2009-11-27 | 2013-01-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 |
| JP5450187B2 (ja) | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP5530794B2 (ja) | 2010-04-28 | 2014-06-25 | 株式会社日立ハイテクノロジーズ | 真空処理装置及びプラズマ処理方法 |
| JP5434970B2 (ja) | 2010-07-12 | 2014-03-05 | セントラル硝子株式会社 | ドライエッチング剤 |
| US9533332B2 (en) | 2011-10-06 | 2017-01-03 | Applied Materials, Inc. | Methods for in-situ chamber clean utilized in an etching processing chamber |
| JP2015037134A (ja) | 2013-08-14 | 2015-02-23 | 大陽日酸株式会社 | 炭化珪素除去装置、及び炭化珪素除去方法 |
| US9824865B2 (en) * | 2014-03-05 | 2017-11-21 | Lam Research Corporation | Waferless clean in dielectric etch process |
| US9508561B2 (en) | 2014-03-11 | 2016-11-29 | Applied Materials, Inc. | Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications |
| US9806252B2 (en) | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
| JP6818402B2 (ja) * | 2015-07-17 | 2021-01-20 | 株式会社日立ハイテク | プラズマ処理装置 |
| JP6169666B2 (ja) | 2015-10-20 | 2017-07-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP6499980B2 (ja) | 2016-01-04 | 2019-04-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| WO2017136216A1 (en) * | 2016-02-01 | 2017-08-10 | Retro-Semi Technologies, Llc | Cleaning apparatus for an exhaust path of a process reaction chamber |
| JP6625891B2 (ja) | 2016-02-10 | 2019-12-25 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
| KR102490700B1 (ko) | 2017-03-27 | 2023-01-26 | 주식회사 히타치하이테크 | 플라스마 처리 방법 |
| WO2018179251A1 (ja) | 2017-03-30 | 2018-10-04 | 株式会社日立国際電気 | 半導体装置の製造方法 |
| DE112017000726B4 (de) * | 2017-09-21 | 2023-06-29 | Hitachi High-Tech Corporation | Verfahren zur Herstellung eines magnetischen Tunnelübergangselements und induktiv gekoppelte Plasmabearbeitungsvorrichtung |
-
2020
- 2020-06-25 JP JP2021524468A patent/JPWO2021260869A1/ja active Pending
- 2020-06-25 WO PCT/JP2020/024933 patent/WO2021260869A1/ja not_active Ceased
- 2020-06-25 KR KR1020217027244A patent/KR102731814B1/ko active Active
- 2020-06-25 US US17/435,127 patent/US11961719B2/en active Active
- 2020-06-25 CN CN202080020786.7A patent/CN114097064B/zh active Active
-
2021
- 2021-06-22 TW TW110122756A patent/TWI807350B/zh active
-
2022
- 2022-11-08 JP JP2022178673A patent/JP7356562B2/ja active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08115886A (ja) * | 1994-08-25 | 1996-05-07 | Tokyo Electron Ltd | 処理装置及びドライクリーニング方法 |
| JP2006173301A (ja) * | 2004-12-15 | 2006-06-29 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 非シリコン系膜の成膜装置のクリーニング方法 |
| JP2009533853A (ja) * | 2006-04-10 | 2009-09-17 | ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング | エッチング方法 |
| JP2012243958A (ja) * | 2011-05-19 | 2012-12-10 | Hitachi High-Technologies Corp | プラズマ処理方法 |
| JP2017063186A (ja) * | 2015-08-19 | 2017-03-30 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | タングステンおよび他の金属の原子層エッチング |
| JP2018041886A (ja) * | 2016-09-09 | 2018-03-15 | 株式会社日立ハイテクノロジーズ | エッチング方法およびエッチング装置 |
| JP2018046216A (ja) * | 2016-09-16 | 2018-03-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021260869A1 (ja) | 2021-12-30 |
| JP7356562B2 (ja) | 2023-10-04 |
| TWI807350B (zh) | 2023-07-01 |
| CN114097064B (zh) | 2025-08-15 |
| KR102731814B1 (ko) | 2024-11-20 |
| US20230122903A1 (en) | 2023-04-20 |
| KR20220000982A (ko) | 2022-01-04 |
| JP2023015220A (ja) | 2023-01-31 |
| TW202201606A (zh) | 2022-01-01 |
| US11961719B2 (en) | 2024-04-16 |
| CN114097064A (zh) | 2022-02-25 |
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