KR102661147B1 - 프로브 가이드판, 그 제조 방법 및 프로브 장치 - Google Patents
프로브 가이드판, 그 제조 방법 및 프로브 장치 Download PDFInfo
- Publication number
- KR102661147B1 KR102661147B1 KR1020170005902A KR20170005902A KR102661147B1 KR 102661147 B1 KR102661147 B1 KR 102661147B1 KR 1020170005902 A KR1020170005902 A KR 1020170005902A KR 20170005902 A KR20170005902 A KR 20170005902A KR 102661147 B1 KR102661147 B1 KR 102661147B1
- Authority
- KR
- South Korea
- Prior art keywords
- hole
- silicon substrate
- oxide layer
- silicon oxide
- guide plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000523 sample Substances 0.000 title claims abstract description 161
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims abstract description 207
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 199
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 199
- 239000010703 silicon Substances 0.000 claims abstract description 199
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 115
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 113
- 238000005530 etching Methods 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 10
- 239000011521 glass Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000007689 inspection Methods 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
- G01R1/07371—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate card or back card with apertures through which the probes pass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016004970A JP6706076B2 (ja) | 2016-01-14 | 2016-01-14 | プローブガイド板及びその製造方法とプローブ装置 |
| JPJP-P-2016-004970 | 2016-01-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170085450A KR20170085450A (ko) | 2017-07-24 |
| KR102661147B1 true KR102661147B1 (ko) | 2024-04-29 |
Family
ID=59313627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170005902A Active KR102661147B1 (ko) | 2016-01-14 | 2017-01-13 | 프로브 가이드판, 그 제조 방법 및 프로브 장치 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10386387B2 (https=) |
| JP (1) | JP6706076B2 (https=) |
| KR (1) | KR102661147B1 (https=) |
| TW (1) | TWI719120B (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6563317B2 (ja) * | 2015-11-25 | 2019-08-21 | 新光電気工業株式会社 | プローブガイド板及びその製造方法とプローブ装置 |
| CN107728043B (zh) * | 2017-11-15 | 2020-08-28 | 奥士康科技股份有限公司 | 一种电路板测试方法及电路板测试系统 |
| CN109212282B (zh) * | 2018-08-22 | 2021-04-16 | 矽电半导体设备(深圳)股份有限公司 | 一种全自动探针检测台及其探针定位模组 |
| TWI752732B (zh) * | 2020-11-18 | 2022-01-11 | 中華精測科技股份有限公司 | 穿孔對位總成及穿孔對位方法 |
| KR20230086509A (ko) * | 2021-12-08 | 2023-06-15 | 삼성전자주식회사 | 반도체 장치, 반도체 패키지, 및 반도체 장치의 제조 방법 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000243942A (ja) | 1998-02-04 | 2000-09-08 | Canon Inc | 半導体基板とその製造方法 |
| JP2001118943A (ja) | 1999-10-22 | 2001-04-27 | Fujitsu Ltd | 不揮発性半導体記憶装置の製造方法 |
| US20020004320A1 (en) | 1995-05-26 | 2002-01-10 | David V. Pedersen | Attaratus for socketably receiving interconnection elements of an electronic component |
| US20020113239A1 (en) | 1995-06-20 | 2002-08-22 | Semiconductor Energy Laboratory Co., Ltd. A Japan Corporation | Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
| US20050225344A1 (en) | 2003-03-06 | 2005-10-13 | Kirby Kyle K | Interconnect having spring contacts |
| JP2007171139A (ja) | 2005-12-26 | 2007-07-05 | Apex Inc | プローブ保持構造およびバネ型プローブ |
| US20070259506A1 (en) | 2004-08-30 | 2007-11-08 | Tomohisa Hoshino | Probe Needle, Method for Manufacturing the Probe Needle and Method for Constructing a Three-Dimensional Structure |
| US20070257689A1 (en) | 2006-05-05 | 2007-11-08 | Dalton Timothy J | High density thermally matched contacting probe assembly and method for producing same |
| US20080217791A1 (en) | 2007-03-06 | 2008-09-11 | Olympus Corporation | Semiconductor device |
| US20100231249A1 (en) | 2009-03-12 | 2010-09-16 | Dang Son N | Probe Head Structure For Probe Test Cards |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19748823B4 (de) * | 1997-11-05 | 2005-09-08 | Feinmetall Gmbh | Servicefreundliche Kontaktiervorrichtung |
| JP3862845B2 (ja) * | 1998-02-05 | 2006-12-27 | セイコーインスツル株式会社 | 近接場用光プローブ |
| TWI239685B (en) * | 2003-05-13 | 2005-09-11 | Jsr Corp | Flaky probe, its manufacturing method and its application |
| JP2007057447A (ja) | 2005-08-26 | 2007-03-08 | Japan Electronic Materials Corp | プローブカード用ガイド板およびその加工方法 |
| KR20070057447A (ko) | 2005-12-02 | 2007-06-07 | 주식회사 대우일렉트로닉스 | 데이터 방송을 이용한 온도 제어 장치 |
| US8907689B2 (en) * | 2006-10-11 | 2014-12-09 | Microprobe, Inc. | Probe retention arrangement |
| WO2013006771A2 (en) * | 2011-07-06 | 2013-01-10 | Celadon Systems, Inc. | Test systems with a probe apparatus and index mechanism |
| JP5847663B2 (ja) * | 2012-08-01 | 2016-01-27 | 日本電子材料株式会社 | プローブカード用ガイド板の製造方法 |
| JP2014071069A (ja) | 2012-10-01 | 2014-04-21 | Japan Electronic Materials Corp | 垂直型プローブ |
| KR102045729B1 (ko) | 2012-12-03 | 2019-11-18 | 엘지디스플레이 주식회사 | 적하장치용 제팅 밸브 |
| JP6112890B2 (ja) * | 2013-02-07 | 2017-04-12 | 日置電機株式会社 | プローブユニット、基板検査装置およびプローブユニット組立方法 |
| JP6235785B2 (ja) | 2013-03-18 | 2017-11-22 | 日本電子材料株式会社 | プローブカード用ガイド板およびプローブカード用ガイド板の製造方法 |
| JP6341634B2 (ja) * | 2013-05-28 | 2018-06-13 | 新光電気工業株式会社 | プローブガイド板及びその製造方法、半導体検査装置 |
-
2016
- 2016-01-14 JP JP2016004970A patent/JP6706076B2/ja active Active
-
2017
- 2017-01-12 US US15/404,832 patent/US10386387B2/en active Active
- 2017-01-13 KR KR1020170005902A patent/KR102661147B1/ko active Active
- 2017-01-16 TW TW106101613A patent/TWI719120B/zh active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020004320A1 (en) | 1995-05-26 | 2002-01-10 | David V. Pedersen | Attaratus for socketably receiving interconnection elements of an electronic component |
| US20020113239A1 (en) | 1995-06-20 | 2002-08-22 | Semiconductor Energy Laboratory Co., Ltd. A Japan Corporation | Semiconductor device with a tapered hole formed using multiple layers with different etching rates |
| JP2000243942A (ja) | 1998-02-04 | 2000-09-08 | Canon Inc | 半導体基板とその製造方法 |
| JP2001118943A (ja) | 1999-10-22 | 2001-04-27 | Fujitsu Ltd | 不揮発性半導体記憶装置の製造方法 |
| US20050225344A1 (en) | 2003-03-06 | 2005-10-13 | Kirby Kyle K | Interconnect having spring contacts |
| US20070259506A1 (en) | 2004-08-30 | 2007-11-08 | Tomohisa Hoshino | Probe Needle, Method for Manufacturing the Probe Needle and Method for Constructing a Three-Dimensional Structure |
| JP2007171139A (ja) | 2005-12-26 | 2007-07-05 | Apex Inc | プローブ保持構造およびバネ型プローブ |
| US20070257689A1 (en) | 2006-05-05 | 2007-11-08 | Dalton Timothy J | High density thermally matched contacting probe assembly and method for producing same |
| US20080217791A1 (en) | 2007-03-06 | 2008-09-11 | Olympus Corporation | Semiconductor device |
| US20100231249A1 (en) | 2009-03-12 | 2010-09-16 | Dang Son N | Probe Head Structure For Probe Test Cards |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170205444A1 (en) | 2017-07-20 |
| JP6706076B2 (ja) | 2020-06-03 |
| TW201734463A (zh) | 2017-10-01 |
| US10386387B2 (en) | 2019-08-20 |
| KR20170085450A (ko) | 2017-07-24 |
| TWI719120B (zh) | 2021-02-21 |
| JP2017125761A (ja) | 2017-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20170113 |
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| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20211221 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20170113 Comment text: Patent Application |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20240326 |
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| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20240423 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20240424 End annual number: 3 Start annual number: 1 |
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| PG1601 | Publication of registration |