KR102394042B1 - 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법 - Google Patents

사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법 Download PDF

Info

Publication number
KR102394042B1
KR102394042B1 KR1020187029161A KR20187029161A KR102394042B1 KR 102394042 B1 KR102394042 B1 KR 102394042B1 KR 1020187029161 A KR1020187029161 A KR 1020187029161A KR 20187029161 A KR20187029161 A KR 20187029161A KR 102394042 B1 KR102394042 B1 KR 102394042B1
Authority
KR
South Korea
Prior art keywords
template
hardmask
patterned
layer
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187029161A
Other languages
English (en)
Korean (ko)
Other versions
KR20180116438A (ko
Inventor
제이슨 케이. 스토워스
앤드류 그렌빌
Original Assignee
인프리아 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 인프리아 코포레이션 filed Critical 인프리아 코포레이션
Publication of KR20180116438A publication Critical patent/KR20180116438A/ko
Application granted granted Critical
Publication of KR102394042B1 publication Critical patent/KR102394042B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020187029161A 2016-03-11 2017-03-10 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법 Active KR102394042B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662306979P 2016-03-11 2016-03-11
US62/306,979 2016-03-11
PCT/US2017/021769 WO2017156388A1 (en) 2016-03-11 2017-03-10 Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates

Publications (2)

Publication Number Publication Date
KR20180116438A KR20180116438A (ko) 2018-10-24
KR102394042B1 true KR102394042B1 (ko) 2022-05-03

Family

ID=59786564

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187029161A Active KR102394042B1 (ko) 2016-03-11 2017-03-10 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법

Country Status (6)

Country Link
US (2) US10649328B2 (enExample)
JP (1) JP6993982B2 (enExample)
KR (1) KR102394042B1 (enExample)
CN (1) CN108780739B (enExample)
TW (1) TWI721125B (enExample)
WO (1) WO2017156388A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
GB201413924D0 (en) 2014-08-06 2014-09-17 Univ Manchester Electron beam resist composition
GB201517273D0 (en) 2015-09-30 2015-11-11 Univ Manchester Resist composition
WO2017156388A1 (en) 2016-03-11 2017-09-14 Inpria Corporation Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates
EP3513249B1 (en) * 2016-09-13 2023-04-05 Google LLC Buffer layer to prevent etching by photoresist developer
US10217633B2 (en) * 2017-03-13 2019-02-26 Globalfoundries Inc. Substantially defect-free polysilicon gate arrays
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
JP7164773B2 (ja) * 2018-03-02 2022-11-02 東京エレクトロン株式会社 パターンを層に転写する方法
TWI797304B (zh) * 2018-04-03 2023-04-01 日商東京威力科創股份有限公司 使用完全自對準方案的消去式互連線形成
KR20250159741A (ko) * 2018-04-16 2025-11-11 어플라이드 머티어리얼스, 인코포레이티드 임시 및 영구 접합을 사용하는 다중 적층 광학 요소들
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) * 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) * 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
WO2021226016A1 (en) * 2020-05-06 2021-11-11 Inpria Corporation Multiple patterning with organometallic photopatternable layers with intermediate freeze steps
US12416863B2 (en) * 2020-07-01 2025-09-16 Applied Materials, Inc. Dry develop process of photoresist
US11621172B2 (en) 2020-07-01 2023-04-04 Applied Materials, Inc. Vapor phase thermal etch solutions for metal oxo photoresists
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
CN113937182B (zh) * 2020-07-13 2024-07-12 中国科学院理化技术研究所 一种具有柔性基底的尺寸可控的氧化锌基光电器件及其制备方法
US11079682B1 (en) * 2020-11-13 2021-08-03 Tokyo Electron Limited Methods for extreme ultraviolet (EUV) resist patterning development
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
US20220199406A1 (en) * 2020-12-17 2022-06-23 Applied Materials, Inc. Vapor deposition of carbon-doped metal oxides for use as photoresists
US20220262625A1 (en) * 2021-02-18 2022-08-18 Applied Materials, Inc. Chemical vapor condensation deposition of photoresist films
US12494368B2 (en) * 2021-11-12 2025-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist and method
EP4435517A4 (en) 2021-11-15 2025-03-19 Nissan Chemical Corporation Polycyclic aromatic hydrocarbon-based light-curable resin composition
KR20250006939A (ko) 2022-04-22 2025-01-13 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성용 조성물
JP2025526829A (ja) 2022-08-12 2025-08-15 ジェレスト， インコーポレイテッド 不飽和置換基を含有する高純度スズ化合物及びそれを調製する方法
KR20250073631A (ko) 2022-10-04 2025-05-27 젤리스트 인코퍼레이티드 고리형 아자스탄난 및 고리형 옥소스탄난 화합물과 이의 제조 방법
EP4636487A1 (en) 2022-12-15 2025-10-22 Nissan Chemical Corporation Composition for forming resist underlayer film
JPWO2024128157A1 (enExample) 2022-12-15 2024-06-20
EP4628990A1 (en) 2023-01-23 2025-10-08 Nissan Chemical Corporation Organic resin composition for forming metal oxide resist pattern
WO2024162459A1 (ja) 2023-02-03 2024-08-08 日産化学株式会社 環境負荷を低減するためのレジスト下層膜形成用組成物
WO2024166869A1 (ja) 2023-02-09 2024-08-15 日産化学株式会社 レジスト下層膜形成組成物
TW202502879A (zh) 2023-02-27 2025-01-16 日商日產化學股份有限公司 阻劑下層膜形成用組成物
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
WO2024203800A1 (ja) 2023-03-24 2024-10-03 日産化学株式会社 光学回折体製造用レジスト下層膜形成用組成物
WO2024197615A1 (zh) * 2023-03-29 2024-10-03 京东方科技集团股份有限公司 金属网格的制备方法和天线的制备方法
WO2024232380A1 (ja) 2023-05-09 2024-11-14 日産化学株式会社 レジスト下層膜形成用組成物
CN117364235B (zh) * 2023-12-07 2024-03-26 度亘核芯光电技术(苏州)有限公司 选区外延生长方法及其中使用的掩膜结构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012124394A (ja) 2010-12-10 2012-06-28 Toshiba Corp パターン形成方法、半導体装置の製造方法およびテンプレートの製造方法
JP2013235885A (ja) 2012-05-07 2013-11-21 Dainippon Printing Co Ltd ナノインプリントリソグラフィ用テンプレートの製造方法
JP2015502668A (ja) 2011-12-19 2015-01-22 キャノン・ナノテクノロジーズ・インコーポレーテッド インプリントリソグラフィー用のシームレスな大面積マスターテンプレートの製造方法

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302198A (en) 1990-09-14 1994-04-12 Ncr Corporation Coating solution for forming glassy layers
US5270265A (en) * 1992-09-01 1993-12-14 Harris Corporation Stress relief technique of removing oxide from surface of trench-patterned semiconductor-on-insulator structure
JP3198310B2 (ja) 1993-01-06 2001-08-13 株式会社ニコン 露光方法及び装置
JP2004512672A (ja) 2000-06-06 2004-04-22 イーケーシー　テクノロジー，インコーポレイティド 電子材料製造法
US7270886B2 (en) 2000-10-12 2007-09-18 Samsung Electronics Co., Ltd. Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
US6368982B1 (en) * 2000-11-15 2002-04-09 Advanced Micro Devices, Inc. Pattern reduction by trimming a plurality of layers of different handmask materials
US20020157418A1 (en) 2001-03-19 2002-10-31 Rahul Ganguli Process for reducing or eliminating bubble defects in sol-gel silica glass
US7160746B2 (en) 2001-07-27 2007-01-09 Lightwave Microsystems Corporation GeBPSG top clad for a planar lightwave circuit
JP2003303824A (ja) * 2002-04-12 2003-10-24 Sony Corp 半導体装置の製造方法
US7037639B2 (en) * 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
JP4932134B2 (ja) * 2003-09-16 2012-05-16 旺宏電子股▲ふん▼有限公司 集積回路の製造における位置合わせ精度条件を緩和する方法
US7348281B2 (en) 2003-09-19 2008-03-25 Brewer Science Inc. Method of filling structures for forming via-first dual damascene interconnects
KR100583957B1 (ko) 2003-12-03 2006-05-26 삼성전자주식회사 희생금속산화막을 채택하여 이중다마신 금속배선을형성하는 방법
JP4839723B2 (ja) 2005-08-10 2011-12-21 富士電機株式会社 保護膜形成方法およびその保護膜を備えた磁気記録媒体
JP4699140B2 (ja) 2005-08-29 2011-06-08 東京応化工業株式会社 パターン形成方法
US7572572B2 (en) * 2005-09-01 2009-08-11 Micron Technology, Inc. Methods for forming arrays of small, closely spaced features
US20070166648A1 (en) 2006-01-17 2007-07-19 International Business Machines Corporation Integrated lithography and etch for dual damascene structures
US20070190762A1 (en) 2006-02-13 2007-08-16 Asml Netherlands B.V. Device manufacturing method and computer program product
US7897058B2 (en) * 2006-02-13 2011-03-01 Asml Netherlands B.V. Device manufacturing method and computer program product
KR100790999B1 (ko) * 2006-10-17 2008-01-03 삼성전자주식회사 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법
WO2008115600A1 (en) * 2007-03-21 2008-09-25 Olambda, Inc. Multi-material hard mask or prepatterned layer for use with multi-patterning photolithography
EP2219882A4 (en) * 2007-11-16 2011-11-23 Ekc Technology Inc COMPOSITIONS FOR REMOVING METAL HARD MASK REST OF A SEMICONDUCTOR SUBSTRATE
KR100933868B1 (ko) * 2008-03-10 2009-12-24 주식회사 하이닉스반도체 마스크 패턴 형성 방법
US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
KR20120092950A (ko) 2011-02-14 2012-08-22 에스케이하이닉스 주식회사 리소그래피-리소그래피-식각 공정에서의 오버레이 버니어 형성 방법
KR101732936B1 (ko) * 2011-02-14 2017-05-08 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
WO2012118847A2 (en) 2011-02-28 2012-09-07 Inpria Corportion Solution processible hardmarks for high resolusion lithography
US9684234B2 (en) 2011-03-24 2017-06-20 Uchicago Argonne, Llc Sequential infiltration synthesis for enhancing multiple-patterning lithography
US8409965B2 (en) * 2011-04-26 2013-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structure for LED with nano-patterned substrate
JP2012253056A (ja) * 2011-05-31 2012-12-20 Toshiba Corp 半導体装置の製造方法
TWI492298B (zh) * 2011-08-26 2015-07-11 Applied Materials Inc 雙重圖案化蝕刻製程
JP6295198B2 (ja) 2011-10-10 2018-03-14 ブルーワー サイエンス アイ エヌ シー． リソグラフ処理のためのスピンオン炭素組成物
US8551690B2 (en) * 2012-01-20 2013-10-08 Micron Technology, Inc. Methods of forming patterns
US8916337B2 (en) * 2012-02-22 2014-12-23 International Business Machines Corporation Dual hard mask lithography process
US8703386B2 (en) 2012-02-27 2014-04-22 International Business Machines Corporation Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
WO2013158527A1 (en) * 2012-04-16 2013-10-24 Brewer Science Inc. Silicon hardmask layer for directed self-assembly
US8647981B1 (en) * 2012-08-31 2014-02-11 Micron Technology, Inc. Methods of forming patterns, and methods of forming integrated circuitry
US9679095B1 (en) 2013-02-19 2017-06-13 Mentor Graphics, A Siemens Business Layout decomposition for multiple patterning lithography
US9005875B2 (en) * 2013-03-15 2015-04-14 Intel Corporation Pre-patterned hard mask for ultrafast lithographic imaging
JP2014239191A (ja) * 2013-06-10 2014-12-18 富士通セミコンダクター株式会社 半導体装置の製造方法
US9176373B2 (en) 2013-07-31 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for decomposition of a single photoresist mask pattern into 3 photoresist mask patterns
US9310684B2 (en) * 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
US9372402B2 (en) 2013-09-13 2016-06-21 The Research Foundation For The State University Of New York Molecular organometallic resists for EUV
JP2016541119A (ja) 2013-12-05 2016-12-28 東京エレクトロン株式会社 直流重ね合わせフリーズ
US20150234272A1 (en) 2014-02-14 2015-08-20 Intel Corporation Metal oxide nanoparticles and photoresist compositions
KR101860249B1 (ko) 2014-02-23 2018-05-21 도쿄엘렉트론가부시키가이샤 다수의 패터닝된 층을 교차시켜 패턴 밀도를 증가시키는 방법
KR102264419B1 (ko) 2014-10-23 2021-06-11 인프리아 코포레이션 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법
KR102346372B1 (ko) 2015-10-13 2021-12-31 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
US9996004B2 (en) * 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
WO2017156388A1 (en) 2016-03-11 2017-09-14 Inpria Corporation Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates
KR20250049565A (ko) 2016-08-12 2025-04-11 인프리아 코포레이션 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법
KR102634520B1 (ko) 2017-11-20 2024-02-06 인프리아 코포레이션 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용
TWI875109B (zh) 2018-04-05 2025-03-01 美商英培雅股份有限公司 包含錫化合物的組合物及其應用
EP3953767A4 (en) 2019-04-12 2023-06-07 Inpria Corporation ORGANOMETALLIC PHOTORESIN DEVELOPER COMPOSITIONS AND METHODS OF TREATMENT

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012124394A (ja) 2010-12-10 2012-06-28 Toshiba Corp パターン形成方法、半導体装置の製造方法およびテンプレートの製造方法
JP2015502668A (ja) 2011-12-19 2015-01-22 キャノン・ナノテクノロジーズ・インコーポレーテッド インプリントリソグラフィー用のシームレスな大面積マスターテンプレートの製造方法
JP2013235885A (ja) 2012-05-07 2013-11-21 Dainippon Printing Co Ltd ナノインプリントリソグラフィ用テンプレートの製造方法

Also Published As

Publication number Publication date
TW201801144A (zh) 2018-01-01
JP2019514042A (ja) 2019-05-30
US20170261850A1 (en) 2017-09-14
KR20180116438A (ko) 2018-10-24
CN108780739A (zh) 2018-11-09
US20200225578A1 (en) 2020-07-16
WO2017156388A1 (en) 2017-09-14
CN108780739B (zh) 2023-09-15
US11347145B2 (en) 2022-05-31
JP6993982B2 (ja) 2022-02-04
US10649328B2 (en) 2020-05-12
TWI721125B (zh) 2021-03-11

Similar Documents

Publication Publication Date Title
KR102394042B1 (ko) 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법
CN107112212B (zh) 使用接枝聚合物材料图案化基底
US9159579B2 (en) Lithography using multilayer spacer for reduced spacer footing
TWI452419B (zh) 細微圖案光罩及其製造方法、及使用其之細微圖案形成方法
CN111819497B (zh) 构建3d功能性光学材料堆叠结构的方法
EP1553617A1 (en) Method for forming pattern and method for manufacturing semiconductor device
WO2011036816A1 (ja) パターン形成方法
JP6683342B2 (ja) イメージ反転、誘導自己組織化、および選択的堆積を補助するための、サブ解像度開口部の使用
TW201003779A (en) Pattern formation method, semiconductor device manufacturing method, and semiconductor device manufacturing apparatus
JP2012519959A (ja) パターンを形成する方法
US20090117360A1 (en) Self-assembled material pattern transfer contrast enhancement
JP2025128363A (ja) 中間凍結工程による有機金属光パターニング可能層を用いたマルチパターニング
KR20060009227A (ko) 반도체장치의 제조방법
JPWO2004114388A1 (ja) 半導体装置の製造方法
JP4002704B2 (ja) 半導体装置の製造方法
US7858516B2 (en) Method for forming fine pattern of semiconductor device
US20180275519A1 (en) Pattern Formation Method
JP4786867B2 (ja) 毛管力を用いて基板上に微細パターンを形成する方法
CN112670168B (zh) 半导体结构的形成方法、晶体管
CN112687528B (zh) 半导体结构及其形成方法
JPH11119431A (ja) 金属パターンの形成方法
JP2008290230A (ja) ポリマー層内にパターンを生成するための方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20181010

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20191216

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20210228

Patent event code: PE09021S01D

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20210927

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20220224

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20220429

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20220429

End annual number: 3

Start annual number: 1

PG1601 Publication of registration