KR102341307B1 - 챔버 컴포넌트들을 위한 다중-층 플라즈마 침식 보호 - Google Patents

챔버 컴포넌트들을 위한 다중-층 플라즈마 침식 보호 Download PDF

Info

Publication number
KR102341307B1
KR102341307B1 KR1020180053225A KR20180053225A KR102341307B1 KR 102341307 B1 KR102341307 B1 KR 102341307B1 KR 1020180053225 A KR1020180053225 A KR 1020180053225A KR 20180053225 A KR20180053225 A KR 20180053225A KR 102341307 B1 KR102341307 B1 KR 102341307B1
Authority
KR
South Korea
Prior art keywords
resistant layer
plasma resistant
conformal
plasma
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020180053225A
Other languages
English (en)
Korean (ko)
Other versions
KR20180123983A (ko
Inventor
토안 트란
카리타 라크세스와르
태원 김
드미트리 루보미르스키
시아오웨이 우
시아오-밍 헤
쳉-수안 추
제니퍼 와이. 선
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20180123983A publication Critical patent/KR20180123983A/ko
Application granted granted Critical
Publication of KR102341307B1 publication Critical patent/KR102341307B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
KR1020180053225A 2017-05-10 2018-05-09 챔버 컴포넌트들을 위한 다중-층 플라즈마 침식 보호 Active KR102341307B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762504471P 2017-05-10 2017-05-10
US62/504,471 2017-05-10
US15/965,794 US10755900B2 (en) 2017-05-10 2018-04-27 Multi-layer plasma erosion protection for chamber components
US15/965,794 2018-04-27

Publications (2)

Publication Number Publication Date
KR20180123983A KR20180123983A (ko) 2018-11-20
KR102341307B1 true KR102341307B1 (ko) 2021-12-17

Family

ID=64097956

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180053225A Active KR102341307B1 (ko) 2017-05-10 2018-05-09 챔버 컴포넌트들을 위한 다중-층 플라즈마 침식 보호

Country Status (5)

Country Link
US (1) US10755900B2 (enExample)
JP (1) JP6976215B2 (enExample)
KR (1) KR102341307B1 (enExample)
CN (2) CN108878246B (enExample)
TW (2) TWI753163B (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9850573B1 (en) * 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US11124659B2 (en) * 2018-01-30 2021-09-21 Lam Research Corporation Method to selectively pattern a surface for plasma resistant coat applications
WO2020028062A1 (en) * 2018-07-31 2020-02-06 Applied Materials, Inc. Methods and apparatus for ald processes
US11180847B2 (en) * 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components
US10920319B2 (en) * 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
WO2020163427A1 (en) * 2019-02-06 2020-08-13 Lam Research Corporation Textured silicon semiconductor processing chamber components
JP7159074B2 (ja) * 2019-02-08 2022-10-24 キオクシア株式会社 ガス供給部材、プラズマ処理装置、及びコーティング膜の形成方法
CN109877012A (zh) * 2019-02-09 2019-06-14 沈阳富创精密设备有限公司 一种制备高致密氧化钇涂层的方法
WO2020180853A1 (en) * 2019-03-05 2020-09-10 Lam Research Corporation Laminated aerosol deposition coating for aluminum components for plasma processing chambers
US10858741B2 (en) 2019-03-11 2020-12-08 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts
US11332827B2 (en) * 2019-03-27 2022-05-17 Applied Materials, Inc. Gas distribution plate with high aspect ratio holes and a high hole density
CN110055529A (zh) * 2019-04-01 2019-07-26 沈阳富创精密设备有限公司 一种制备双层陶瓷层的方法
JP7623305B2 (ja) * 2019-06-24 2025-01-28 ラム リサーチ コーポレーション 基板表面の蒸気洗浄
CN112239858A (zh) * 2019-07-17 2021-01-19 皮考逊公司 制造耐腐蚀涂覆物品的方法，耐腐蚀涂覆物品及其用途
KR20210017826A (ko) 2019-08-09 2021-02-17 박준현 강아지 안정을 위한 스피커
CN110331362A (zh) * 2019-08-21 2019-10-15 重庆臻宝实业有限公司 抗等离子体腐蚀的复合涂层及制备方法
US11976357B2 (en) * 2019-09-09 2024-05-07 Applied Materials, Inc. Methods for forming a protective coating on processing chamber surfaces or components
US11424140B2 (en) 2019-10-10 2022-08-23 Samsung Electronics Co., Ltd. Member, method of manufacturing the same, apparatus for manufacturing the same, and semiconductor manufacturing apparatus
CN115004351A (zh) * 2020-01-30 2022-09-02 朗姆研究公司 用于处理腔室的带有保护表面的组件
US11658014B2 (en) * 2020-04-11 2023-05-23 Applied Materials, Inc. Apparatuses and methods of protecting nickel and nickel containing components with thin films
CN113594013B (zh) * 2020-04-30 2024-01-26 中微半导体设备(上海)股份有限公司 零部件、其形成涂层的方法及装置和等离子体反应装置
TW202147492A (zh) * 2020-06-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 噴淋板、基板處理裝置、基板處理方法
KR20230025484A (ko) * 2020-06-23 2023-02-21 램 리써치 코포레이션 원자 층 증착을 사용하는 플라즈마 에칭 툴들에 사용된 컴포넌트들의 표면들 시일링
US20210403337A1 (en) * 2020-06-30 2021-12-30 Applied Materials, Inc. Yttrium oxide based coating and bulk compositions
CN114078679B (zh) * 2020-08-14 2024-01-23 中微半导体设备(上海)股份有限公司 半导体零部件、复合涂层形成方法和等离子体反应装置
US20240295026A1 (en) * 2020-09-17 2024-09-05 Lam Research Corporation Hybrid showerhead with separate faceplate for high temperature process
CN114256047B (zh) * 2020-09-25 2023-12-22 中微半导体设备(上海)股份有限公司 半导体零部件、涂层形成方法和等离子体反应装置
KR20220067696A (ko) * 2020-11-18 2022-05-25 (주)포인트엔지니어링 가스 공급부재 및 이를 구비한 기판처리장치
KR102626584B1 (ko) * 2020-12-24 2024-01-18 도카로 가부시키가이샤 정전 척 및 처리 장치
KR20230158587A (ko) * 2021-03-19 2023-11-20 엔테그리스, 아이엔씨. 불화된 이트륨 코팅을 가진 기재, 및 기재의 제조 및 사용 방법
JP7709682B2 (ja) * 2021-04-21 2025-07-17 Toto株式会社 半導体製造装置用部材及び半導体製造装置
CN115440562A (zh) * 2021-06-02 2022-12-06 东京毅力科创株式会社 喷淋头、电极组件、气体供给组件、基片处理装置和系统
US20230103643A1 (en) * 2021-10-04 2023-04-06 Applied Materials, Inc. ADVANCED BARRIER NICKEL OXIDE (BNiO) COATING DEVELOPMENT FOR THE PROCESS CHAMBER COMPONENTS
TWI802264B (zh) * 2022-02-11 2023-05-11 翔名科技股份有限公司 抗電漿腐蝕薄膜結構與其製造方法
JP7154517B1 (ja) * 2022-02-18 2022-10-18 Ａｇｃ株式会社 イットリウム質保護膜およびその製造方法ならびに部材
CN118974310A (zh) * 2022-03-08 2024-11-15 恩特格里斯公司 用于输送钼蒸气的装置及方法
US20230319971A1 (en) 2022-03-30 2023-10-05 Applied Materials, Inc. Methods of manufacturing plasma generating cells for a plasma source
US20230313378A1 (en) * 2022-03-31 2023-10-05 Applied Materials, Inc. Methods of preventing metal contamination by ceramic heater
CN115478249B (zh) * 2022-09-20 2024-03-05 宣城开盛新能源科技有限公司 一种铜铟镓硒溅射用的防着板及其制备方法和重复使用方法
WO2025229937A1 (ja) * 2024-04-30 2025-11-06 トーカロ株式会社 プラズマ処理装置用部材、及びプラズマ処理装置用部材の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104715993A (zh) * 2013-12-13 2015-06-17 中微半导体设备(上海)有限公司 等离子体处理腔室、气体喷淋头及其制造方法

Family Cites Families (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5693139A (en) * 1984-07-26 1997-12-02 Research Development Corporation Of Japan Growth of doped semiconductor monolayers
US5630314A (en) 1992-09-10 1997-05-20 Hitachi, Ltd. Thermal stress relaxation type ceramic coated heat-resistant element
JP3761040B2 (ja) * 1995-06-26 2006-03-29 株式会社アルバック 真空装置用構造材料および真空装置用構造部材
US5819434A (en) * 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
USRE39969E1 (en) * 1997-04-11 2008-01-01 Tokyo Electron Limited Processing system
JP3362113B2 (ja) 1997-07-15 2003-01-07 日本碍子株式会社 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
JP3510993B2 (ja) 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6916534B2 (en) 2001-03-08 2005-07-12 Shin-Etsu Chemical Co., Ltd. Thermal spray spherical particles, and sprayed components
JP2002356387A (ja) 2001-03-30 2002-12-13 Toshiba Ceramics Co Ltd 耐プラズマ性部材
JP4277973B2 (ja) 2001-07-19 2009-06-10 日本碍子株式会社 イットリア−アルミナ複合酸化物膜の製造方法、イットリア−アルミナ複合酸化物膜および耐蝕性部材
JP4921652B2 (ja) 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
JP3850277B2 (ja) * 2001-12-03 2006-11-29 東芝セラミックス株式会社 耐プラズマ性部材の製造方法
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
JP2003277051A (ja) 2002-03-22 2003-10-02 Ngk Insulators Ltd イットリア−アルミナ複合酸化物膜を有する積層体、イットリア−アルミナ複合酸化物膜、耐蝕性部材、耐蝕性膜およびイットリア−アルミナ複合酸化物膜の製造方法
JP2003324072A (ja) * 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
JP4151308B2 (ja) * 2002-05-17 2008-09-17 東京エレクトロン株式会社 処理装置のガス導入方法
JP4260450B2 (ja) * 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
KR100772740B1 (ko) 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재
CN100495413C (zh) 2003-03-31 2009-06-03 东京毅力科创株式会社 用于邻接在处理元件上的相邻覆层的方法
US20060037536A1 (en) 2003-10-24 2006-02-23 Toshiba Ceramics Co., Ltd. Plasma resistant member, manufacturing method for the same and method of forming a thermal spray coat
KR101172334B1 (ko) * 2003-12-26 2012-08-14 고에키자이단호진 고쿠사이카가쿠 신고우자이단 샤워 플레이트, 플라즈마 처리 장치, 및 제품의 제조방법
JP4606121B2 (ja) 2004-01-29 2011-01-05 京セラ株式会社 耐食膜積層耐食性部材およびその製造方法
JP2006082474A (ja) 2004-09-17 2006-03-30 Tosoh Corp 樹脂部材
JP2006186306A (ja) 2004-09-30 2006-07-13 Toshiba Ceramics Co Ltd ガス拡散プレートおよびその製造方法
KR101226120B1 (ko) 2004-10-26 2013-01-24 쿄세라 코포레이션 내식성 부재 및 그 제조방법
US7968205B2 (en) 2005-10-21 2011-06-28 Shin-Etsu Chemical Co., Ltd. Corrosion resistant multilayer member
JP2007217782A (ja) 2006-02-20 2007-08-30 Showa Denko Kk 希土類元素のフッ化物皮膜を有する耐食性皮膜およびその製造方法
JP2008047869A (ja) * 2006-06-13 2008-02-28 Hokuriku Seikei Kogyo Kk シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP4546447B2 (ja) 2006-12-22 2010-09-15 トーカロ株式会社 耐プラズマエロージョン性に優れる溶射皮膜被覆部材およびその製造方法
CN101207002A (zh) * 2006-12-22 2008-06-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种半导体刻蚀设备中零件的表面处理方法
US7696117B2 (en) 2007-04-27 2010-04-13 Applied Materials, Inc. Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US8142606B2 (en) * 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
JP5227197B2 (ja) * 2008-06-19 2013-07-03 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
US9017765B2 (en) 2008-11-12 2015-04-28 Applied Materials, Inc. Protective coatings resistant to reactive plasma processing
US8858745B2 (en) 2008-11-12 2014-10-14 Applied Materials, Inc. Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas
JP5589839B2 (ja) * 2009-03-24 2014-09-17 東レ株式会社 プラズマ処理装置およびこれを用いたアモルファスシリコン薄膜の製造方法
TW201100578A (en) 2009-06-19 2011-01-01 Saint Gobain Ceramics & Plastics Inc Sealed plasma coatings
WO2011049938A2 (en) 2009-10-20 2011-04-28 Saint-Gobain Ceramics & Plastics, Inc. Microelectronic processing component having a corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer
JP5678883B2 (ja) * 2009-11-02 2015-03-04 東レ株式会社 プラズマｃｖｄ装置、および、シリコン薄膜の製造方法
US20110198034A1 (en) * 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
JP5654862B2 (ja) * 2010-04-12 2015-01-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
TW201209957A (en) 2010-05-28 2012-03-01 Praxair Technology Inc Substrate supports for semiconductor applications
US20120183790A1 (en) * 2010-07-14 2012-07-19 Christopher Petorak Thermal spray composite coatings for semiconductor applications
US20120052216A1 (en) * 2010-08-27 2012-03-01 Applied Materials, Inc. Gas distribution showerhead with high emissivity surface
US8916021B2 (en) 2010-10-27 2014-12-23 Applied Materials, Inc. Electrostatic chuck and showerhead with enhanced thermal properties and methods of making thereof
US9068265B2 (en) * 2011-02-01 2015-06-30 Applied Materials, Inc. Gas distribution plate with discrete protective elements
US20120216955A1 (en) * 2011-02-25 2012-08-30 Toshiba Materials Co., Ltd. Plasma processing apparatus
US9082593B2 (en) * 2011-03-31 2015-07-14 Tokyo Electron Limited Electrode having gas discharge function and plasma processing apparatus
JP5782293B2 (ja) * 2011-05-10 2015-09-24 東京エレクトロン株式会社 プラズマ生成用電極およびプラズマ処理装置
KR20130025025A (ko) 2011-09-01 2013-03-11 주식회사 코미코 정전척
CN102352492A (zh) * 2011-11-10 2012-02-15 中微半导体设备(上海)有限公司 一种带冷却系统的气体注入装置
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9394615B2 (en) * 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
US9988702B2 (en) 2012-05-22 2018-06-05 Kabushiki Kaisha Toshiba Component for plasma processing apparatus and method for manufacturing component for plasma processing apparatus
JP6097499B2 (ja) * 2012-07-20 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置用部品及びプラズマ処理装置
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
CN103794458B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于等离子体处理腔室内部的部件及制造方法
CN103794445B (zh) 2012-10-29 2016-03-16 中微半导体设备(上海)有限公司 用于等离子体处理腔室的静电夹盘组件及制造方法
CN103794460B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于半导体装置性能改善的涂层
US9337002B2 (en) * 2013-03-12 2016-05-10 Lam Research Corporation Corrosion resistant aluminum coating on plasma chamber components
US9865434B2 (en) * 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9711334B2 (en) * 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9624593B2 (en) 2013-08-29 2017-04-18 Applied Materials, Inc. Anodization architecture for electro-plate adhesion
US9440886B2 (en) * 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9484190B2 (en) * 2014-01-25 2016-11-01 Yuri Glukhoy Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area
US9275840B2 (en) * 2014-01-25 2016-03-01 Yuri Glukhoy Method for providing uniform distribution of plasma density in a plasma treatment apparatus
US9384950B2 (en) * 2014-01-31 2016-07-05 Applied Materials, Inc. Chamber coatings
US20170022595A1 (en) 2014-03-31 2017-01-26 Kabushiki Kaisha Toshiba Plasma-Resistant Component, Method For Manufacturing The Plasma-Resistant Component, And Film Deposition Apparatus Used For Manufacturing The Plasma-Resistant Component
US20150311043A1 (en) 2014-04-25 2015-10-29 Applied Materials, Inc. Chamber component with fluorinated thin film coating
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10196728B2 (en) 2014-05-16 2019-02-05 Applied Materials, Inc. Plasma spray coating design using phase and stress control
US9431221B2 (en) * 2014-07-08 2016-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma-processing apparatus with upper electrode plate and method for performing plasma treatment process
JP6714978B2 (ja) * 2014-07-10 2020-07-01 東京エレクトロン株式会社 プラズマ処理装置用の部品、プラズマ処理装置、及びプラズマ処理装置用の部品の製造方法
KR20160030812A (ko) 2014-09-11 2016-03-21 삼성전자주식회사 플라즈마 처리 장치
US9790582B2 (en) 2015-04-27 2017-10-17 Lam Research Corporation Long lifetime thermal spray coating for etching or deposition chamber application
US20160379806A1 (en) 2015-06-25 2016-12-29 Lam Research Corporation Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers
US20160375515A1 (en) * 2015-06-29 2016-12-29 Lam Research Corporation Use of atomic layer deposition coatings to protect brazing line against corrosion, erosion, and arcing
KR101916872B1 (ko) 2015-10-15 2018-11-08 아이원스 주식회사 반도체 공정 장비 부품의 코팅층 재생 방법 및 이에 따른 반도체 공정 장비 부품
TWI677593B (zh) * 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
US11326253B2 (en) * 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
JP6950196B2 (ja) * 2017-02-16 2021-10-13 三菱マテリアル株式会社 プラズマ処理装置用電極板およびプラズマ処理装置用電極板の再生方法
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US12272527B2 (en) * 2018-05-09 2025-04-08 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
US20200087788A1 (en) * 2018-09-17 2020-03-19 Applied Materials, Inc. Multiple channel showerheads

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104715993A (zh) * 2013-12-13 2015-06-17 中微半导体设备(上海)有限公司 等离子体处理腔室、气体喷淋头及其制造方法

Also Published As

Publication number Publication date
CN108878246A (zh) 2018-11-23
JP6976215B2 (ja) 2021-12-08
JP2018190983A (ja) 2018-11-29
US20180330923A1 (en) 2018-11-15
CN108878246B (zh) 2023-02-28
US10755900B2 (en) 2020-08-25
TWM574331U (zh) 2019-02-11
TW201903206A (zh) 2019-01-16
CN209104115U (zh) 2019-07-12
KR20180123983A (ko) 2018-11-20
TWI753163B (zh) 2022-01-21

Similar Documents

Publication Publication Date Title
KR102341307B1 (ko) 챔버 컴포넌트들을 위한 다중-층 플라즈마 침식 보호
JP7408273B2 (ja) チャンバコンポーネント用金属オキシフッ化物膜
KR102831592B1 (ko) 보호 금속 불산화물 코팅들
US20180366302A1 (en) Coating architecture for plasma sprayed chamber components
US20240352589A1 (en) ADVANCED BARRIER NICKEL OXIDE (BNiO) COATING DEVELOPMENT FOR THE PROCESS CHAMBER COMPONENTS
US20190131113A1 (en) Y2O3-SiO2 PROTECTIVE COATINGS FOR SEMICONDUCTOR PROCESS CHAMBER COMPONENTS
US20190330742A1 (en) Cold spray coating with sacrificial filler powder
US20230287568A1 (en) ADVANCED BARRIER NICKEL OXIDE (BNiO) COATING DEVELOPMENT FOR PROCESS CHAMBER COMPONENTS VIA OZONE TREATMENT
US20240240304A1 (en) Metal oxy-fluoride coating for chamber components and method of coating thereof
US20250361594A1 (en) Method of coating a substrate including a multi-layer coating
KR102901726B1 (ko) 챔버 컴포넌트들을 위한 금속-옥시-플루오라이드 막들
TW202437434A (zh) 具有先進塗層技術之半導體腔室組件
KR20250171254A (ko) 챔버 컴포넌트들을 위한 금속-옥시-플루오라이드 막들

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5