JP5589839B2 - プラズマ処理装置およびこれを用いたアモルファスシリコン薄膜の製造方法 - Google Patents
プラズマ処理装置およびこれを用いたアモルファスシリコン薄膜の製造方法 Download PDFInfo
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Description
(b)該真空容器の内部に設けられたプラズマ生成電極、
(c)前記真空容器の内部において、前記プラズマ生成電極に対向して間隔をおいて位置せしめられる基板を保持するための基板保持機構、
(d)前記真空容器の内部を減圧に保持するため、前記真空容器の内部において、前記プラズマ生成電極と前記真空容器の内壁面との間に形成されたガス排気室に開口して前記真空容器に接続されたガス排気装置、
(e)前記プラズマ生成電極に接続され、該プラズマ生成電極に電力を供給する電源、および、
(f)プラズマ処理用の原料ガスを前記真空容器の内部に導入するために、前記真空容器に接続されたガス導入管を備えたプラズマ処理装置において、
(g)前記プラズマ生成電極が、前記基板保持機構に基板が保持されたときに、該基板に対向する面から該プラズマ生成電極を貫通し前記ガス排気室へ至る複数のガス排気孔を有し、
(h)前記ガス導入管に接続して設けられたガス供給管が、前記複数のガス排気孔の内部に向けて前記原料ガスを吐出するためのガス供給口を有し、
(i)前記ガス供給管および前記ガス供給口が、該ガス供給口から吐出される前記原料ガスの流れ方向の延長線が前記ガス排気孔の前記ガス排気室との境界面における端面開口領域と交差するように配置されており、
(j)前記ガス供給口が、前記ガス排気孔の内壁面に開口しているプラズマ処理装置。
2、2A: プラズマ生成電極
2a、2Aa: 電極板
2Ab: 電極の側壁
2Ac: 電極の天板
3: 基板
4: 基板保持機構
5: 絶縁物
6: 電源
7: プラズマ
8: ガス排気室
9: ガス排気装置
10: 排気配管
11: 基板加熱機構
12: 補助ガス排気装置
13: ガス排気孔
14: ガス導入管
15: ガス供給管
16: ガス供給口
17: ガスの流れ方向の延長線
18: アースシールド
19: 端面開口領域
20: 圧力調整バルブ
21: プラズマ閉じ込め電極
22: 貫通孔
23: 接地電極
24: プラズマ閉じ込め電極加熱機構
25: ガスバッファ空間
C14: プラズマCVD装置
E1、E2、E4、E6、E8、E10、E12: プラズマ処理装置
P1: 真空容器
P2: プラズマ生成電極
P3: 基板
P6: 電源
P7: プラズマ
P9: ガス排気装置
P10: 排気配管
P11: 基板加熱機構
P14: ガス導入管
P16: ガス供給口
P20: 圧力調整バルブ
PA13: プラズマCVD装置
Claims (9)
- (a)真空容器、
(b)該真空容器の内部に設けられたプラズマ生成電極、
(c)前記真空容器の内部において、前記プラズマ生成電極に対向して間隔をおいて位置せしめられる基板を保持するための基板保持機構、
(d)前記真空容器の内部を減圧に保持するため、前記真空容器の内部において、前記プラズマ生成電極と前記真空容器の内壁面との間に形成されたガス排気室に開口して前記真空容器に接続されたガス排気装置、
(e)前記プラズマ生成電極に接続され、該プラズマ生成電極に電力を供給する電源、および、
(f)プラズマ処理用の原料ガスを前記真空容器の内部に導入するために、前記真空容器に接続されたガス導入管を備えたプラズマ処理装置において、
(g)前記プラズマ生成電極が、前記基板保持機構に基板が保持されたときに、該基板に対向する面から該プラズマ生成電極を貫通し前記ガス排気室へ至る複数のガス排気孔を有し、
(h)前記ガス導入管に接続して設けられたガス供給管が、前記複数のガス排気孔の内部に向けて前記原料ガスを吐出するためのガス供給口を有し、
(i)前記ガス供給管および前記ガス供給口が、該ガス供給口から吐出される前記原料ガスの流れ方向の延長線が前記ガス排気孔の前記ガス排気室との境界面における端面開口領域と交差するように配置されており、
(j)前記ガス供給口が、前記ガス排気孔の内壁面に開口しているプラズマ処理装置。 - 前記ガス排気室が、前記プラズマ生成電極の内部に設けられている請求項1に記載のプラズマ処理装置。
- 前記ガス供給管および前記ガス供給口が、前記ガス排気孔の内部に位置している請求項1に記載のプラズマ処理装置。
- 前記基板保持機構に基板が保持されたときに、該基板に対向する前記プラズマ生成電極の面に対して、間隔を置いて略平行に設けられたプラズマ閉じ込め電極を備え、該プラズマ閉じ込め電極が、前記プラズマ生成電極の複数のガス排気孔に対応する位置に、貫通孔を有する請求項1に記載のプラズマ処理装置。
- 前記ガス供給口が、前記プラズマ閉じ込め電極の前記貫通孔の内壁面に開口している請求項4に記載のプラズマ処理装置。
- 前記ガス供給管および前記ガス供給口が、前記プラズマ閉じ込め電極の前記貫通孔の内部に位置している請求項4に記載のプラズマ処理装置。
- 前記プラズマ閉じ込め電極が、プラズマ閉じ込め電極加熱機構を有し、前記プラズマ閉じ込め電極の内部に、ガスバッファ空間が設けられている請求項4に記載のプラズマ処理装置。
- 前記プラズマ処理装置におけるプラズマ処理が、化学的気相蒸着(CVD)である請求項1に記載のプラズマ処理装置。
- 請求項1乃至8のいずれか一つに記載のプラズマ処理装置が用いられ、当該プラズマ処理装置における前記ガス排気装置により、前記真空容器内が減圧状態に維持され、前記ガス導入管から、シランを含む原料ガスが導入され、前記電源から、前記プラズマ生成電極に、プラズマを発生するための電力が供給され、前記プラズマ生成電極により生成したプラズマにより、前記原料ガスが分解され、前記基板上にアモルファスシリコン薄膜が形成されてなるアモルファスシリコン薄膜の製造方法。
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JP5444044B2 (ja) * | 2010-03-02 | 2014-03-19 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワーヘッド |
JP6088247B2 (ja) * | 2011-06-03 | 2017-03-01 | 株式会社和廣武 | Cvd装置、及び、cvd膜の製造方法 |
US8643275B2 (en) * | 2011-11-08 | 2014-02-04 | University Of Utah Research Foundation | Micro-plasma field effect transistors |
US9269521B2 (en) | 2011-11-08 | 2016-02-23 | University Of Utah Research Foundation | Micro-plasma field effect transistors |
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US10204795B2 (en) * | 2016-02-04 | 2019-02-12 | Applied Materials, Inc. | Flow distribution plate for surface fluorine reduction |
JP6240712B1 (ja) * | 2016-05-31 | 2017-11-29 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
US10755900B2 (en) * | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
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US11502217B1 (en) * | 2021-05-24 | 2022-11-15 | Gautam Ganguly | Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon |
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