KR102289199B1 - 친액부와 발액부를 갖는 기재의 제조 방법, 조성물 및 도전막의 형성 방법 - Google Patents

친액부와 발액부를 갖는 기재의 제조 방법, 조성물 및 도전막의 형성 방법 Download PDF

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KR102289199B1
KR102289199B1 KR1020150151214A KR20150151214A KR102289199B1 KR 102289199 B1 KR102289199 B1 KR 102289199B1 KR 1020150151214 A KR1020150151214 A KR 1020150151214A KR 20150151214 A KR20150151214 A KR 20150151214A KR 102289199 B1 KR102289199 B1 KR 102289199B1
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South Korea
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group
substrate
polymer
lyophilic
film
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KR1020150151214A
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Korean (ko)
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KR20160052385A (ko
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히토시 하마구치
켄로우 다나카
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제이에스알 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02288—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating printing, e.g. ink-jet printing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L51/0004—
    • H01L51/0022—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Paints Or Removers (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020150151214A 2014-10-31 2015-10-29 친액부와 발액부를 갖는 기재의 제조 방법, 조성물 및 도전막의 형성 방법 KR102289199B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2014-223708 2014-10-31
JP2014223708 2014-10-31
JPJP-P-2015-201556 2015-10-09
JP2015201556A JP6561754B2 (ja) 2014-10-31 2015-10-09 親液部と撥液部を有する基材の製造方法、組成物および導電膜の形成方法

Publications (2)

Publication Number Publication Date
KR20160052385A KR20160052385A (ko) 2016-05-12
KR102289199B1 true KR102289199B1 (ko) 2021-08-11

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JP (1) JP6561754B2 (ja)
KR (1) KR102289199B1 (ja)

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CN109843452A (zh) * 2016-10-21 2019-06-04 Jsr株式会社 硬化膜的形成方法、感放射线树脂组合物、具备硬化膜的显示元件及传感器
JP7161092B2 (ja) * 2017-02-06 2022-10-26 セントラル硝子株式会社 含フッ素単量体、含フッ素重合体およびそれを用いたパターン形成用組成物、およびそのパターン形成方法
WO2018225549A1 (ja) 2017-06-05 2018-12-13 セントラル硝子株式会社 含フッ素単量体、含フッ素重合体およびそれを用いたパターン形成用組成物、並びにそのパターン形成方法
JP7140964B2 (ja) 2017-06-05 2022-09-22 セントラル硝子株式会社 含フッ素単量体、含フッ素重合体およびそれを用いたパターン形成用組成物、並びにそのパターン形成方法
JP2021176919A (ja) * 2018-07-11 2021-11-11 Jsr株式会社 硬化性組成物、及び硬化膜の形成方法
JP7110090B2 (ja) * 2018-12-28 2022-08-01 東京エレクトロン株式会社 基板処理方法および基板処理システム
TW202412021A (zh) * 2022-09-02 2024-03-16 日商Ｊｓｒ股份有限公司 導電膜的製造方法、分散液、感放射線性樹脂組成物、發光元件

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JP2003252928A (ja) 2002-02-27 2003-09-10 Nec Corp フッ素含有アセタールまたはケタール構造を有する単量体、重合体、ならびに化学増幅型レジスト組成物
JP2006073469A (ja) * 2004-09-06 2006-03-16 Toshiba Corp 電子放出素子の製造方法及び電子放出素子
JP2013029555A (ja) * 2011-07-26 2013-02-07 Jsr Corp 感放射線性組成物及びパターン形成方法

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DE4112966A1 (de) * 1991-04-20 1992-10-22 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und damit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP3980351B2 (ja) 2001-08-03 2007-09-26 富士フイルム株式会社 導電性パターン材料及び導電性パターンの形成方法
JP4266596B2 (ja) 2001-11-06 2009-05-20 大日本印刷株式会社 導電性パターン形成体の製造方法
JP4447203B2 (ja) 2002-09-05 2010-04-07 大日本印刷株式会社 パターン形成体
JP4420776B2 (ja) 2004-08-23 2010-02-24 富士フイルム株式会社 グラフトポリマーパターン形成方法、グラフトポリマーパターン材料、導電性パターン材料の製造方法、及び導電性パターン材料
JP5866749B2 (ja) 2010-05-19 2016-02-17 東ソー株式会社 導電性インク組成物、電気的導通部位の製造方法、及びその用途
JP2012218318A (ja) 2011-04-11 2012-11-12 Dic Corp 導電性インク受容層形成用樹脂組成物、導電性インク受容基材及び回路形成用基板ならびに印刷物、導電性パターン及び回路基板
JP2012232434A (ja) 2011-04-28 2012-11-29 Dic Corp 導電性インク受容層形成用樹脂組成物、導電性インク受容基材及び回路形成用基板ならびに印刷物、導電性パターン及び回路基板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003252928A (ja) 2002-02-27 2003-09-10 Nec Corp フッ素含有アセタールまたはケタール構造を有する単量体、重合体、ならびに化学増幅型レジスト組成物
JP2006073469A (ja) * 2004-09-06 2006-03-16 Toshiba Corp 電子放出素子の製造方法及び電子放出素子
JP2013029555A (ja) * 2011-07-26 2013-02-07 Jsr Corp 感放射線性組成物及びパターン形成方法

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JP2016087602A (ja) 2016-05-23
JP6561754B2 (ja) 2019-08-21

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