KR102212723B1 - 노광 장치, 노광 방법 및 물품 제조 방법 - Google Patents

노광 장치, 노광 방법 및 물품 제조 방법 Download PDF

Info

Publication number
KR102212723B1
KR102212723B1 KR1020170103409A KR20170103409A KR102212723B1 KR 102212723 B1 KR102212723 B1 KR 102212723B1 KR 1020170103409 A KR1020170103409 A KR 1020170103409A KR 20170103409 A KR20170103409 A KR 20170103409A KR 102212723 B1 KR102212723 B1 KR 102212723B1
Authority
KR
South Korea
Prior art keywords
optical system
arc
projection optical
curvature
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020170103409A
Other languages
English (en)
Korean (ko)
Other versions
KR20180022578A (ko
Inventor
후미야스 오노
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20180022578A publication Critical patent/KR20180022578A/ko
Application granted granted Critical
Publication of KR102212723B1 publication Critical patent/KR102212723B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
KR1020170103409A 2016-08-24 2017-08-16 노광 장치, 노광 방법 및 물품 제조 방법 Active KR102212723B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-163562 2016-08-24
JP2016163562A JP6771997B2 (ja) 2016-08-24 2016-08-24 露光装置、露光方法、および物品製造方法

Publications (2)

Publication Number Publication Date
KR20180022578A KR20180022578A (ko) 2018-03-06
KR102212723B1 true KR102212723B1 (ko) 2021-02-05

Family

ID=61303054

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170103409A Active KR102212723B1 (ko) 2016-08-24 2017-08-16 노광 장치, 노광 방법 및 물품 제조 방법

Country Status (4)

Country Link
JP (1) JP6771997B2 (enExample)
KR (1) KR102212723B1 (enExample)
CN (1) CN107783383B (enExample)
TW (1) TWI658333B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7204400B2 (ja) * 2018-09-28 2023-01-16 キヤノン株式会社 露光装置及び物品の製造方法
CN110412836A (zh) * 2019-07-31 2019-11-05 江苏盟星智能科技有限公司 一种激光直接成像曝光机及其成像方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5883836A (ja) * 1981-11-13 1983-05-19 Hitachi Ltd 円弧状照明光形成スリツト
JP2001085328A (ja) * 1993-06-11 2001-03-30 Nikon Corp 投影露光方法及び装置、並びに素子製造方法
JPH07273005A (ja) * 1994-03-29 1995-10-20 Nikon Corp 投影露光装置
JPH09283434A (ja) * 1996-04-15 1997-10-31 Canon Inc 投影露光装置及びそれを用いたデバイスの製造方法
US5880834A (en) * 1996-10-16 1999-03-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Convex diffraction grating imaging spectrometer
JP3413160B2 (ja) * 2000-06-15 2003-06-03 キヤノン株式会社 照明装置及びそれを用いた走査型露光装置
KR20020001418A (ko) * 2000-06-28 2002-01-09 박종섭 노광 장비의 어퍼처
JP3652329B2 (ja) * 2002-06-28 2005-05-25 キヤノン株式会社 走査露光装置、走査露光方法、デバイス製造方法およびデバイス
JP2004266259A (ja) * 2003-02-10 2004-09-24 Nikon Corp 照明光学装置、露光装置および露光方法
KR20050002310A (ko) * 2003-06-30 2005-01-07 주식회사 하이닉스반도체 변형 조명계 노광장치 및 이를 이용한 감광막 패턴 형성방법
WO2006131242A1 (en) * 2005-06-10 2006-12-14 Carl Zeiss Smt Ag Multiple-use projection system
JP2007158225A (ja) * 2005-12-08 2007-06-21 Canon Inc 露光装置
JP2009164355A (ja) * 2008-01-07 2009-07-23 Canon Inc 走査露光装置およびデバイス製造方法
JP2010118403A (ja) * 2008-11-11 2010-05-27 Canon Inc 走査型露光装置、及びデバイスの製造方法
WO2010061674A1 (ja) * 2008-11-28 2010-06-03 株式会社ニコン 補正ユニット、照明光学系、露光装置、およびデバイス製造方法
JP2010197517A (ja) * 2009-02-23 2010-09-09 Canon Inc 照明光学装置、露光装置およびデバイス製造方法
JP2011039172A (ja) 2009-08-07 2011-02-24 Canon Inc 露光装置およびデバイス製造方法
JP2011108697A (ja) * 2009-11-13 2011-06-02 Nikon Corp 露光量制御方法、露光方法、及びデバイス製造方法
JP2013238670A (ja) * 2012-05-11 2013-11-28 Canon Inc 露光装置、露光方法、デバイスの製造方法及び開口板
JP2014130297A (ja) * 2012-12-29 2014-07-10 Cerma Precision Inc 投影光学系、露光装置、スキャン露光装置及び表示パネルの製造方法
JP2014195048A (ja) * 2013-02-28 2014-10-09 Canon Inc 照明光学系、露光装置及びデバイスの製造方法
CN105093847B (zh) * 2015-08-04 2017-05-10 深圳市华星光电技术有限公司 曝光机

Also Published As

Publication number Publication date
TWI658333B (zh) 2019-05-01
CN107783383A (zh) 2018-03-09
KR20180022578A (ko) 2018-03-06
TW201807508A (zh) 2018-03-01
JP6771997B2 (ja) 2020-10-21
JP2018031873A (ja) 2018-03-01
CN107783383B (zh) 2020-06-09

Similar Documents

Publication Publication Date Title
JP5071385B2 (ja) 可変スリット装置、照明装置、露光装置、露光方法及びデバイス製造方法
JP5428250B2 (ja) 照明光学系、露光装置、光学素子およびその製造方法、並びにデバイス製造方法
KR20040075764A (ko) 카톱트릭형 투영광학계와 노광장치
KR102115279B1 (ko) 투영 광학계, 노광 장치 및 물품 제조 방법
TW200839460A (en) Exposure apparatus and semiconductor device fabrication method
US6868223B2 (en) Illumination apparatus, exposure apparatus using the same and device fabrication method
KR102212723B1 (ko) 노광 장치, 노광 방법 및 물품 제조 방법
KR20190092275A (ko) 투영 광학계, 노광 장치, 및 물품의 제조 방법
TWI662376B (zh) Exposure device, exposure method, and article manufacturing method
US7148948B2 (en) Scanning exposure apparatus, and device manufacturing method
JP2008153401A (ja) 露光装置及びデバイス製造方法
KR102747768B1 (ko) 노광 장치 및 물품제조방법
JP6139870B2 (ja) 露光方法、露光装置および物品の製造方法
KR20110053904A (ko) 노광 장치 및 디바이스 제조 방법
JP6970548B2 (ja) 照明光学系、露光装置、及び物品製造方法
JP2018066956A (ja) 照明光学系、露光装置、および物品製造方法
JP6570298B2 (ja) 照明光学系及び露光装置並びにデバイス製造方法
JP2004271552A (ja) 拡大投影光学系
CN107807494B (zh) 照明光学系统、曝光装置以及物品制造方法
JP2007287885A (ja) 照明光学装置、露光装置、およびデバイス製造方法
JP2001230192A (ja) 投影露光装置及びデバイスの製造方法
JPH09260260A (ja) 投影露光装置
JP2010219232A (ja) 投影露光装置
JP2016033999A (ja) 露光装置及び物品の製造方法
JP2009117672A (ja) 照明光学系、露光装置、およびデバイス製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20170816

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190225

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20170816

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200211

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20201120

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210201

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210202

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240130

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20250203

Start annual number: 5

End annual number: 5