CN107783383B - 曝光装置、曝光方法以及物品制造方法 - Google Patents

曝光装置、曝光方法以及物品制造方法 Download PDF

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Publication number
CN107783383B
CN107783383B CN201710728228.6A CN201710728228A CN107783383B CN 107783383 B CN107783383 B CN 107783383B CN 201710728228 A CN201710728228 A CN 201710728228A CN 107783383 B CN107783383 B CN 107783383B
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China
Prior art keywords
optical system
arc
slit
exposure apparatus
projection optical
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CN201710728228.6A
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Chinese (zh)
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CN107783383A (zh
Inventor
大野文靖
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
CN201710728228.6A 2016-08-24 2017-08-23 曝光装置、曝光方法以及物品制造方法 Active CN107783383B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-163562 2016-08-24
JP2016163562A JP6771997B2 (ja) 2016-08-24 2016-08-24 露光装置、露光方法、および物品製造方法

Publications (2)

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CN107783383A CN107783383A (zh) 2018-03-09
CN107783383B true CN107783383B (zh) 2020-06-09

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JP (1) JP6771997B2 (enExample)
KR (1) KR102212723B1 (enExample)
CN (1) CN107783383B (enExample)
TW (1) TWI658333B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7204400B2 (ja) * 2018-09-28 2023-01-16 キヤノン株式会社 露光装置及び物品の製造方法
CN110412836A (zh) * 2019-07-31 2019-11-05 江苏盟星智能科技有限公司 一种激光直接成像曝光机及其成像方法

Citations (5)

* Cited by examiner, † Cited by third party
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US5880834A (en) * 1996-10-16 1999-03-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Convex diffraction grating imaging spectrometer
KR20020001418A (ko) * 2000-06-28 2002-01-09 박종섭 노광 장비의 어퍼처
CN1472603A (zh) * 2002-06-28 2004-02-04 ������������ʽ���� 扫描曝光设备和方法，以及装置制造方法
CN103389624A (zh) * 2012-05-11 2013-11-13 佳能株式会社 曝光装置、曝光方法、器件的制造方法以及开口板
CN105093847A (zh) * 2015-08-04 2015-11-25 深圳市华星光电技术有限公司 曝光机

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JPS5883836A (ja) * 1981-11-13 1983-05-19 Hitachi Ltd 円弧状照明光形成スリツト
JP2001085328A (ja) * 1993-06-11 2001-03-30 Nikon Corp 投影露光方法及び装置、並びに素子製造方法
JPH07273005A (ja) * 1994-03-29 1995-10-20 Nikon Corp 投影露光装置
JPH09283434A (ja) * 1996-04-15 1997-10-31 Canon Inc 投影露光装置及びそれを用いたデバイスの製造方法
JP3413160B2 (ja) * 2000-06-15 2003-06-03 キヤノン株式会社 照明装置及びそれを用いた走査型露光装置
JP2004266259A (ja) * 2003-02-10 2004-09-24 Nikon Corp 照明光学装置、露光装置および露光方法
KR20050002310A (ko) * 2003-06-30 2005-01-07 주식회사 하이닉스반도체 변형 조명계 노광장치 및 이를 이용한 감광막 패턴 형성방법
WO2006131242A1 (en) * 2005-06-10 2006-12-14 Carl Zeiss Smt Ag Multiple-use projection system
JP2007158225A (ja) * 2005-12-08 2007-06-21 Canon Inc 露光装置
JP2009164355A (ja) * 2008-01-07 2009-07-23 Canon Inc 走査露光装置およびデバイス製造方法
JP2010118403A (ja) * 2008-11-11 2010-05-27 Canon Inc 走査型露光装置、及びデバイスの製造方法
WO2010061674A1 (ja) * 2008-11-28 2010-06-03 株式会社ニコン 補正ユニット、照明光学系、露光装置、およびデバイス製造方法
JP2010197517A (ja) * 2009-02-23 2010-09-09 Canon Inc 照明光学装置、露光装置およびデバイス製造方法
JP2011039172A (ja) 2009-08-07 2011-02-24 Canon Inc 露光装置およびデバイス製造方法
JP2011108697A (ja) * 2009-11-13 2011-06-02 Nikon Corp 露光量制御方法、露光方法、及びデバイス製造方法
JP2014130297A (ja) * 2012-12-29 2014-07-10 Cerma Precision Inc 投影光学系、露光装置、スキャン露光装置及び表示パネルの製造方法
JP2014195048A (ja) * 2013-02-28 2014-10-09 Canon Inc 照明光学系、露光装置及びデバイスの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880834A (en) * 1996-10-16 1999-03-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Convex diffraction grating imaging spectrometer
KR20020001418A (ko) * 2000-06-28 2002-01-09 박종섭 노광 장비의 어퍼처
CN1472603A (zh) * 2002-06-28 2004-02-04 ������������ʽ���� 扫描曝光设备和方法，以及装置制造方法
CN103389624A (zh) * 2012-05-11 2013-11-13 佳能株式会社 曝光装置、曝光方法、器件的制造方法以及开口板
CN105093847A (zh) * 2015-08-04 2015-11-25 深圳市华星光电技术有限公司 曝光机

Also Published As

Publication number Publication date
TWI658333B (zh) 2019-05-01
CN107783383A (zh) 2018-03-09
KR20180022578A (ko) 2018-03-06
TW201807508A (zh) 2018-03-01
JP6771997B2 (ja) 2020-10-21
JP2018031873A (ja) 2018-03-01
KR102212723B1 (ko) 2021-02-05

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