KR102130184B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102130184B1
KR102130184B1 KR1020157008779A KR20157008779A KR102130184B1 KR 102130184 B1 KR102130184 B1 KR 102130184B1 KR 1020157008779 A KR1020157008779 A KR 1020157008779A KR 20157008779 A KR20157008779 A KR 20157008779A KR 102130184 B1 KR102130184 B1 KR 102130184B1
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layer
oxide
semiconductor layer
oxide semiconductor
oxide layer
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KR1020157008779A
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Korean (ko)
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KR20150073966A (ko
Inventor
슌페이 야마자키
šœ페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/78606—

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  • Thin Film Transistor (AREA)
KR1020157008779A 2012-10-24 2013-10-15 반도체 장치 Expired - Fee Related KR102130184B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2012-234510 2012-10-24
JPJP-P-2012-234427 2012-10-24
JP2012234510 2012-10-24
JP2012234427 2012-10-24
JP2012244909 2012-11-06
JPJP-P-2012-244909 2012-11-06
PCT/JP2013/078634 WO2014065301A1 (en) 2012-10-24 2013-10-15 Semiconductor device

Publications (2)

Publication Number Publication Date
KR20150073966A KR20150073966A (ko) 2015-07-01
KR102130184B1 true KR102130184B1 (ko) 2020-07-03

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KR1020157008779A Expired - Fee Related KR102130184B1 (ko) 2012-10-24 2013-10-15 반도체 장치

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US (1) US9865743B2 (https=)
JP (1) JP6253947B2 (https=)
KR (1) KR102130184B1 (https=)
TW (1) TWI631709B (https=)
WO (1) WO2014065301A1 (https=)

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TWI857334B (zh) * 2021-11-15 2024-10-01 睿生光電股份有限公司 電子裝置
KR102743089B1 (ko) * 2023-08-10 2024-12-16 경북대학교 산학협력단 캐리어 농도가 수직적으로 제어된 전자소자 및 그 제조방법

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