KR102062280B1 - 산화물 반도체 박막 및 박막 트랜지스터 - Google Patents

산화물 반도체 박막 및 박막 트랜지스터 Download PDF

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KR102062280B1
KR102062280B1 KR1020157007278A KR20157007278A KR102062280B1 KR 102062280 B1 KR102062280 B1 KR 102062280B1 KR 1020157007278 A KR1020157007278 A KR 1020157007278A KR 20157007278 A KR20157007278 A KR 20157007278A KR 102062280 B1 KR102062280 B1 KR 102062280B1
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thin film
oxide semiconductor
semiconductor thin
oxide
tungsten
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KR20150063046A (ko
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도쿠유키 나카야마
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스미토모 긴조쿠 고잔 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H01L2924/0103—
    • H01L2924/01049—
    • H01L2924/01074—

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  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020157007278A 2012-10-11 2013-10-10 산화물 반도체 박막 및 박막 트랜지스터 Expired - Fee Related KR102062280B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012226439A JP5966840B2 (ja) 2012-10-11 2012-10-11 酸化物半導体薄膜および薄膜トランジスタ
JPJP-P-2012-226439 2012-10-11
PCT/JP2013/077610 WO2014058019A1 (ja) 2012-10-11 2013-10-10 酸化物半導体薄膜および薄膜トランジスタ

Publications (2)

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KR20150063046A KR20150063046A (ko) 2015-06-08
KR102062280B1 true KR102062280B1 (ko) 2020-01-03

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KR1020157007278A Expired - Fee Related KR102062280B1 (ko) 2012-10-11 2013-10-10 산화물 반도체 박막 및 박막 트랜지스터

Country Status (6)

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US (1) US9299791B2 (enExample)
JP (1) JP5966840B2 (enExample)
KR (1) KR102062280B1 (enExample)
CN (1) CN104685634B (enExample)
TW (1) TWI595668B (enExample)
WO (1) WO2014058019A1 (enExample)

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JP6119773B2 (ja) * 2014-03-25 2017-04-26 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
WO2016024442A1 (ja) * 2014-08-12 2016-02-18 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
JP6357664B2 (ja) * 2014-09-22 2018-07-18 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
JP6501385B2 (ja) * 2014-10-22 2019-04-17 日本放送協会 薄膜トランジスタおよびその製造方法
KR101816468B1 (ko) 2014-10-22 2018-01-08 스미토모덴키고교가부시키가이샤 산화물 소결체 및 반도체 디바이스
JP2016111125A (ja) * 2014-12-04 2016-06-20 日本放送協会 薄膜トランジスタおよびその製造方法
KR101948998B1 (ko) * 2015-01-26 2019-02-15 스미토모덴키고교가부시키가이샤 산화물 반도체막 및 반도체 디바이스
WO2016129146A1 (ja) * 2015-02-13 2016-08-18 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
JP6394518B2 (ja) * 2015-07-02 2018-09-26 住友電気工業株式会社 半導体デバイスおよびその製造方法
US10636914B2 (en) * 2015-07-30 2020-04-28 Idemitsu Kosan Co., Ltd. Crystalline oxide semiconductor thin film, method for producing crystalline oxide semiconductor thin film, and thin film transistor
JP6350466B2 (ja) * 2015-09-16 2018-07-04 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
JP6308191B2 (ja) * 2015-09-16 2018-04-11 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
JP6593257B2 (ja) * 2016-06-13 2019-10-23 住友電気工業株式会社 半導体デバイスおよびその製造方法
WO2018211724A1 (ja) * 2017-05-16 2018-11-22 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、酸化物半導体膜、ならびに半導体デバイスの製造方法
JP6493601B2 (ja) * 2018-05-31 2019-04-03 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
US11569250B2 (en) 2020-06-29 2023-01-31 Taiwan Semiconductor Manufacturing Company Limited Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
KR20240073052A (ko) * 2021-10-14 2024-05-24 이데미쓰 고산 가부시키가이샤 결정 산화물 박막, 적층체 및 박막 트랜지스터
JPWO2024042997A1 (enExample) * 2022-08-25 2024-02-29
US20250253150A1 (en) * 2024-02-06 2025-08-07 POSTECH Research and Business Development Foundation Method of preparing tellurium oxide thin film and thin film transistor using sputtering

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US20100140609A1 (en) * 2007-03-23 2010-06-10 Koki Yano Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
WO2012105323A1 (ja) * 2011-02-04 2012-08-09 住友金属鉱山株式会社 酸化物焼結体およびそれを加工したタブレット

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KR100505536B1 (ko) * 2002-03-27 2005-08-04 스미토모 긴조쿠 고잔 가부시키가이샤 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스
EP1737044B1 (en) 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP4662075B2 (ja) 2007-02-02 2011-03-30 株式会社ブリヂストン 薄膜トランジスタ及びその製造方法
CN102105619B (zh) 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
JP2010045263A (ja) * 2008-08-15 2010-02-25 Idemitsu Kosan Co Ltd 酸化物半導体、スパッタリングターゲット、及び薄膜トランジスタ
CN102187467A (zh) * 2008-10-23 2011-09-14 出光兴产株式会社 薄膜晶体管及其制造方法
JP2010106291A (ja) * 2008-10-28 2010-05-13 Idemitsu Kosan Co Ltd 酸化物半導体及びその製造方法
JP5553997B2 (ja) 2009-02-06 2014-07-23 古河電気工業株式会社 トランジスタおよびその製造方法
EP2421048A4 (en) 2009-04-17 2012-08-29 Bridgestone Corp THIN-LAYER TRANSISTOR AND METHOD FOR PRODUCING A THIN-LAYER TRANSISTOR
JP2010251604A (ja) 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタの製造方法
JP2010251606A (ja) * 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタ
KR101035357B1 (ko) * 2009-12-15 2011-05-20 삼성모바일디스플레이주식회사 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자
JP5437825B2 (ja) 2010-01-15 2014-03-12 出光興産株式会社 Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100140609A1 (en) * 2007-03-23 2010-06-10 Koki Yano Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
WO2012105323A1 (ja) * 2011-02-04 2012-08-09 住友金属鉱山株式会社 酸化物焼結体およびそれを加工したタブレット

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Publication number Publication date
KR20150063046A (ko) 2015-06-08
CN104685634B (zh) 2017-11-24
US9299791B2 (en) 2016-03-29
JP2014078645A (ja) 2014-05-01
JP5966840B2 (ja) 2016-08-10
CN104685634A (zh) 2015-06-03
US20150279943A1 (en) 2015-10-01
TWI595668B (zh) 2017-08-11
WO2014058019A1 (ja) 2014-04-17
TW201427033A (zh) 2014-07-01

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