TWI595668B - 氧化物半導體薄膜及薄膜電晶體 - Google Patents

氧化物半導體薄膜及薄膜電晶體 Download PDF

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Publication number
TWI595668B
TWI595668B TW102136713A TW102136713A TWI595668B TW I595668 B TWI595668 B TW I595668B TW 102136713 A TW102136713 A TW 102136713A TW 102136713 A TW102136713 A TW 102136713A TW I595668 B TWI595668 B TW I595668B
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TW
Taiwan
Prior art keywords
oxide semiconductor
thin film
semiconductor thin
film
oxide
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Application number
TW102136713A
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English (en)
Chinese (zh)
Other versions
TW201427033A (zh
Inventor
中山德行
Original Assignee
住友金屬鑛山股份有限公司
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Application filed by 住友金屬鑛山股份有限公司 filed Critical 住友金屬鑛山股份有限公司
Publication of TW201427033A publication Critical patent/TW201427033A/zh
Application granted granted Critical
Publication of TWI595668B publication Critical patent/TWI595668B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW102136713A 2012-10-11 2013-10-11 氧化物半導體薄膜及薄膜電晶體 TWI595668B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012226439A JP5966840B2 (ja) 2012-10-11 2012-10-11 酸化物半導体薄膜および薄膜トランジスタ

Publications (2)

Publication Number Publication Date
TW201427033A TW201427033A (zh) 2014-07-01
TWI595668B true TWI595668B (zh) 2017-08-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW102136713A TWI595668B (zh) 2012-10-11 2013-10-11 氧化物半導體薄膜及薄膜電晶體

Country Status (6)

Country Link
US (1) US9299791B2 (enExample)
JP (1) JP5966840B2 (enExample)
KR (1) KR102062280B1 (enExample)
CN (1) CN104685634B (enExample)
TW (1) TWI595668B (enExample)
WO (1) WO2014058019A1 (enExample)

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JP6119773B2 (ja) * 2014-03-25 2017-04-26 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
WO2016024442A1 (ja) * 2014-08-12 2016-02-18 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
JP6357664B2 (ja) * 2014-09-22 2018-07-18 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
JP6501385B2 (ja) * 2014-10-22 2019-04-17 日本放送協会 薄膜トランジスタおよびその製造方法
KR101816468B1 (ko) 2014-10-22 2018-01-08 스미토모덴키고교가부시키가이샤 산화물 소결체 및 반도체 디바이스
JP2016111125A (ja) * 2014-12-04 2016-06-20 日本放送協会 薄膜トランジスタおよびその製造方法
KR101948998B1 (ko) * 2015-01-26 2019-02-15 스미토모덴키고교가부시키가이샤 산화물 반도체막 및 반도체 디바이스
WO2016129146A1 (ja) * 2015-02-13 2016-08-18 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
JP6394518B2 (ja) * 2015-07-02 2018-09-26 住友電気工業株式会社 半導体デバイスおよびその製造方法
US10636914B2 (en) * 2015-07-30 2020-04-28 Idemitsu Kosan Co., Ltd. Crystalline oxide semiconductor thin film, method for producing crystalline oxide semiconductor thin film, and thin film transistor
JP6350466B2 (ja) * 2015-09-16 2018-07-04 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
JP6308191B2 (ja) * 2015-09-16 2018-04-11 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
JP6593257B2 (ja) * 2016-06-13 2019-10-23 住友電気工業株式会社 半導体デバイスおよびその製造方法
WO2018211724A1 (ja) * 2017-05-16 2018-11-22 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、酸化物半導体膜、ならびに半導体デバイスの製造方法
JP6493601B2 (ja) * 2018-05-31 2019-04-03 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
US11569250B2 (en) 2020-06-29 2023-01-31 Taiwan Semiconductor Manufacturing Company Limited Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
KR20240073052A (ko) * 2021-10-14 2024-05-24 이데미쓰 고산 가부시키가이샤 결정 산화물 박막, 적층체 및 박막 트랜지스터
JPWO2024042997A1 (enExample) * 2022-08-25 2024-02-29
US20250253150A1 (en) * 2024-02-06 2025-08-07 POSTECH Research and Business Development Foundation Method of preparing tellurium oxide thin film and thin film transistor using sputtering

Citations (3)

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US20030218153A1 (en) * 2002-03-27 2003-11-27 Sumitomo Metal Mining Co., Ltd. Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
JP2010106291A (ja) * 2008-10-28 2010-05-13 Idemitsu Kosan Co Ltd 酸化物半導体及びその製造方法
US20110140095A1 (en) * 2009-12-15 2011-06-16 c/o Samsung Mobile Display Co., Ltd. Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same

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US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP4662075B2 (ja) 2007-02-02 2011-03-30 株式会社ブリヂストン 薄膜トランジスタ及びその製造方法
TWI487118B (zh) 2007-03-23 2015-06-01 Idemitsu Kosan Co Semiconductor device
CN102105619B (zh) 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
JP2010045263A (ja) * 2008-08-15 2010-02-25 Idemitsu Kosan Co Ltd 酸化物半導体、スパッタリングターゲット、及び薄膜トランジスタ
CN102187467A (zh) * 2008-10-23 2011-09-14 出光兴产株式会社 薄膜晶体管及其制造方法
JP5553997B2 (ja) 2009-02-06 2014-07-23 古河電気工業株式会社 トランジスタおよびその製造方法
EP2421048A4 (en) 2009-04-17 2012-08-29 Bridgestone Corp THIN-LAYER TRANSISTOR AND METHOD FOR PRODUCING A THIN-LAYER TRANSISTOR
JP2010251604A (ja) 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタの製造方法
JP2010251606A (ja) * 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタ
JP5437825B2 (ja) 2010-01-15 2014-03-12 出光興産株式会社 Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
WO2012105323A1 (ja) * 2011-02-04 2012-08-09 住友金属鉱山株式会社 酸化物焼結体およびそれを加工したタブレット

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030218153A1 (en) * 2002-03-27 2003-11-27 Sumitomo Metal Mining Co., Ltd. Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device
JP2010106291A (ja) * 2008-10-28 2010-05-13 Idemitsu Kosan Co Ltd 酸化物半導体及びその製造方法
US20110140095A1 (en) * 2009-12-15 2011-06-16 c/o Samsung Mobile Display Co., Ltd. Oxide semiconductor thin film transistor, method of manufacturing the same, and organic electroluminescent device including the same

Also Published As

Publication number Publication date
KR20150063046A (ko) 2015-06-08
CN104685634B (zh) 2017-11-24
US9299791B2 (en) 2016-03-29
KR102062280B1 (ko) 2020-01-03
JP2014078645A (ja) 2014-05-01
JP5966840B2 (ja) 2016-08-10
CN104685634A (zh) 2015-06-03
US20150279943A1 (en) 2015-10-01
WO2014058019A1 (ja) 2014-04-17
TW201427033A (zh) 2014-07-01

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