CN104685634B - 氧化物半导体薄膜以及薄膜晶体管 - Google Patents

氧化物半导体薄膜以及薄膜晶体管 Download PDF

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Publication number
CN104685634B
CN104685634B CN201380049309.3A CN201380049309A CN104685634B CN 104685634 B CN104685634 B CN 104685634B CN 201380049309 A CN201380049309 A CN 201380049309A CN 104685634 B CN104685634 B CN 104685634B
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China
Prior art keywords
oxide semiconductor
semiconductor thin
film
thin film
oxide
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Expired - Fee Related
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CN201380049309.3A
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English (en)
Chinese (zh)
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CN104685634A (zh
Inventor
中山德行
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Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
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Publication of CN104685634A publication Critical patent/CN104685634A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201380049309.3A 2012-10-11 2013-10-10 氧化物半导体薄膜以及薄膜晶体管 Expired - Fee Related CN104685634B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-226439 2012-10-11
JP2012226439A JP5966840B2 (ja) 2012-10-11 2012-10-11 酸化物半導体薄膜および薄膜トランジスタ
PCT/JP2013/077610 WO2014058019A1 (ja) 2012-10-11 2013-10-10 酸化物半導体薄膜および薄膜トランジスタ

Publications (2)

Publication Number Publication Date
CN104685634A CN104685634A (zh) 2015-06-03
CN104685634B true CN104685634B (zh) 2017-11-24

Family

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CN201380049309.3A Expired - Fee Related CN104685634B (zh) 2012-10-11 2013-10-10 氧化物半导体薄膜以及薄膜晶体管

Country Status (6)

Country Link
US (1) US9299791B2 (enExample)
JP (1) JP5966840B2 (enExample)
KR (1) KR102062280B1 (enExample)
CN (1) CN104685634B (enExample)
TW (1) TWI595668B (enExample)
WO (1) WO2014058019A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
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JP6119773B2 (ja) 2014-03-25 2017-04-26 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
US20160251264A1 (en) * 2014-08-12 2016-09-01 Sumitomo Electric Industries, Ltd. Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device
JP6357664B2 (ja) * 2014-09-22 2018-07-18 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
US10087517B2 (en) 2014-10-22 2018-10-02 Sumitomo Electric Industries, Ltd. Oxide sintered body and semiconductor device
JP6501385B2 (ja) * 2014-10-22 2019-04-17 日本放送協会 薄膜トランジスタおよびその製造方法
JP2016111125A (ja) * 2014-12-04 2016-06-20 日本放送協会 薄膜トランジスタおよびその製造方法
EP3101692A1 (en) * 2015-01-26 2016-12-07 Sumitomo Electric Industries, Ltd. Oxide semiconductor film and semiconductor device
WO2016129146A1 (ja) * 2015-02-13 2016-08-18 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイス
JP6394518B2 (ja) * 2015-07-02 2018-09-26 住友電気工業株式会社 半導体デバイスおよびその製造方法
CN107924822B (zh) * 2015-07-30 2022-10-28 出光兴产株式会社 晶体氧化物半导体薄膜、晶体氧化物半导体薄膜的制造方法以及薄膜晶体管
JP6308191B2 (ja) * 2015-09-16 2018-04-11 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
JP6350466B2 (ja) * 2015-09-16 2018-07-04 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
JP6593257B2 (ja) * 2016-06-13 2019-10-23 住友電気工業株式会社 半導体デバイスおよびその製造方法
WO2018211724A1 (ja) * 2017-05-16 2018-11-22 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、酸化物半導体膜、ならびに半導体デバイスの製造方法
JP6493601B2 (ja) * 2018-05-31 2019-04-03 住友電気工業株式会社 酸化物焼結体およびその製造方法、スパッタターゲット、ならびに半導体デバイスの製造方法
CN119498029A (zh) * 2022-08-25 2025-02-21 株式会社日本显示器 氧化物半导体膜、薄膜晶体管及电子设备

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
KR100505536B1 (ko) * 2002-03-27 2005-08-04 스미토모 긴조쿠 고잔 가부시키가이샤 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스
EP2413366B1 (en) 2004-03-12 2017-01-11 Japan Science And Technology Agency A switching element of LCDs or organic EL displays
US7646015B2 (en) * 2006-10-31 2010-01-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and semiconductor device
JP4662075B2 (ja) 2007-02-02 2011-03-30 株式会社ブリヂストン 薄膜トランジスタ及びその製造方法
WO2008117739A1 (ja) 2007-03-23 2008-10-02 Idemitsu Kosan Co., Ltd. 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法
CN102105619B (zh) * 2008-06-06 2014-01-22 出光兴产株式会社 氧化物薄膜用溅射靶及其制造方法
JP2010045263A (ja) * 2008-08-15 2010-02-25 Idemitsu Kosan Co Ltd 酸化物半導体、スパッタリングターゲット、及び薄膜トランジスタ
KR101612147B1 (ko) * 2008-10-23 2016-04-12 이데미쓰 고산 가부시키가이샤 박막 트랜지스터 및 그 제조방법
JP2010106291A (ja) * 2008-10-28 2010-05-13 Idemitsu Kosan Co Ltd 酸化物半導体及びその製造方法
JP5553997B2 (ja) 2009-02-06 2014-07-23 古河電気工業株式会社 トランジスタおよびその製造方法
JP2010251604A (ja) 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタの製造方法
KR20120004526A (ko) 2009-04-17 2012-01-12 가부시키가이샤 브리지스톤 박막 트랜지스터 및 박막 트랜지스터의 제조 방법
JP2010251606A (ja) * 2009-04-17 2010-11-04 Bridgestone Corp 薄膜トランジスタ
KR101035357B1 (ko) * 2009-12-15 2011-05-20 삼성모바일디스플레이주식회사 산화물 반도체 박막 트랜지스터, 그 제조방법 및 산화물 반도체 박막 트랜지스터를 구비한 유기전계 발광소자
JP5437825B2 (ja) 2010-01-15 2014-03-12 出光興産株式会社 Ｉｎ−Ｇａ−Ｏ系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
US9340867B2 (en) * 2011-02-04 2016-05-17 Sumitomo Metal Mining Co., Ltd. Oxide sintered body and tablets obtained by processing same

Also Published As

Publication number Publication date
KR102062280B1 (ko) 2020-01-03
US20150279943A1 (en) 2015-10-01
CN104685634A (zh) 2015-06-03
TWI595668B (zh) 2017-08-11
KR20150063046A (ko) 2015-06-08
US9299791B2 (en) 2016-03-29
TW201427033A (zh) 2014-07-01
JP5966840B2 (ja) 2016-08-10
WO2014058019A1 (ja) 2014-04-17
JP2014078645A (ja) 2014-05-01

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Granted publication date: 20171124