KR102025007B9 - 비휘발성 강유전체 메모리 소자 및 이의 구동 방법 - Google Patents

비휘발성 강유전체 메모리 소자 및 이의 구동 방법

Info

Publication number
KR102025007B9
KR102025007B9 KR1020180021678A KR20180021678A KR102025007B9 KR 102025007 B9 KR102025007 B9 KR 102025007B9 KR 1020180021678 A KR1020180021678 A KR 1020180021678A KR 20180021678 A KR20180021678 A KR 20180021678A KR 102025007 B9 KR102025007 B9 KR 102025007B9
Authority
KR
South Korea
Prior art keywords
driving
same
memory device
ferroelectric memory
volatile ferroelectric
Prior art date
Application number
KR1020180021678A
Other languages
English (en)
Other versions
KR20190105179A (ko
KR102025007B1 (ko
Inventor
황철성
Original Assignee
서울대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울대학교산학협력단 filed Critical 서울대학교산학협력단
Priority to US15/903,216 priority Critical patent/US10210921B1/en
Priority to KR1020180021678A priority patent/KR102025007B1/ko
Priority to CN201810157460.3A priority patent/CN110189777B/zh
Publication of KR20190105179A publication Critical patent/KR20190105179A/ko
Application granted granted Critical
Publication of KR102025007B1 publication Critical patent/KR102025007B1/ko
Publication of KR102025007B9 publication Critical patent/KR102025007B9/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2255—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2257—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020180021678A 2018-02-23 2018-02-23 비휘발성 강유전체 메모리 소자 및 이의 구동 방법 KR102025007B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US15/903,216 US10210921B1 (en) 2018-02-23 2018-02-23 Non-volatile ferroelectric memory device and method of driving the same
KR1020180021678A KR102025007B1 (ko) 2018-02-23 2018-02-23 비휘발성 강유전체 메모리 소자 및 이의 구동 방법
CN201810157460.3A CN110189777B (zh) 2018-02-23 2018-02-24 非挥发性铁电存储器件及其驱动方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180021678A KR102025007B1 (ko) 2018-02-23 2018-02-23 비휘발성 강유전체 메모리 소자 및 이의 구동 방법

Publications (3)

Publication Number Publication Date
KR20190105179A KR20190105179A (ko) 2019-09-16
KR102025007B1 KR102025007B1 (ko) 2019-09-24
KR102025007B9 true KR102025007B9 (ko) 2022-09-06

Family

ID=65322788

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180021678A KR102025007B1 (ko) 2018-02-23 2018-02-23 비휘발성 강유전체 메모리 소자 및 이의 구동 방법

Country Status (3)

Country Link
US (1) US10210921B1 (ko)
KR (1) KR102025007B1 (ko)
CN (1) CN110189777B (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020047314A (ja) * 2018-09-14 2020-03-26 キオクシア株式会社 半導体記憶装置
JP7066585B2 (ja) * 2018-09-19 2022-05-13 キオクシア株式会社 記憶装置
KR20200078753A (ko) * 2018-12-21 2020-07-02 삼성전자주식회사 메모리 장치
CN113330566A (zh) * 2019-03-29 2021-08-31 汉阳大学校产学协力团 基于铁电材料的三维快闪存储器及其制造
DE102019003223A1 (de) * 2019-05-02 2020-11-05 Namlab Ggmbh Elektrische Speichervorrichtung mit negativer Kapazität
KR20210015148A (ko) * 2019-07-31 2021-02-10 에스케이하이닉스 주식회사 음의 캐패시턴스를 구비하는 강유전층을 포함하는 비휘발성 메모리 장치
KR20210138997A (ko) * 2020-05-13 2021-11-22 삼성전자주식회사 커패시터, 커패시터 제어 방법, 및 이를 포함하는 트랜지스터
US11569250B2 (en) 2020-06-29 2023-01-31 Taiwan Semiconductor Manufacturing Company Limited Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same
CN113689904A (zh) * 2020-07-03 2021-11-23 长江存储科技有限责任公司 用于对三维FeRAM中的存储单元进行读取和写入的方法
US20220199631A1 (en) * 2020-12-22 2022-06-23 Advanced Nanoscale Devices Ferroelectric semiconducting floating gate field-effect transistor
CN112909168B (zh) * 2021-03-23 2024-01-30 湖北大学 一种基于锂掺杂氧化铌的多功能存储器件及其制备方法
US11775374B2 (en) * 2021-04-15 2023-10-03 Western Digital Technologies, Inc. State-by-state program loop delta detection mode for detecting a defective memory array
CN113224170A (zh) * 2021-05-08 2021-08-06 西安电子科技大学 基于铁电掺杂的负电容场效应晶体管

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US5198384A (en) * 1991-05-15 1993-03-30 Micron Technology, Inc. Process for manufacturing a ferroelectric dynamic/non-volatile memory array using a disposable layer above storage-node junction
JP3422442B2 (ja) * 1994-09-06 2003-06-30 ソニー株式会社 不揮発性半導体記憶装置並びにその使用方法及び製造方法
JP2939973B2 (ja) * 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法
JPH1040599A (ja) * 1996-07-25 1998-02-13 Tdk Corp 記録媒体および記録再生方法
US7221586B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
JP4887481B2 (ja) * 2002-08-20 2012-02-29 独立行政法人産業技術総合研究所 半導体強誘電体記憶デバイス
JP4785180B2 (ja) * 2004-09-10 2011-10-05 富士通セミコンダクター株式会社 強誘電体メモリ、多値データ記録方法、および多値データ読出し方法
JP4745108B2 (ja) * 2006-04-06 2011-08-10 株式会社東芝 不揮発性半導体記憶装置
JP2010267705A (ja) * 2009-05-13 2010-11-25 Panasonic Corp 半導体メモリセルおよびその製造方法
JP5793525B2 (ja) * 2013-03-08 2015-10-14 株式会社東芝 不揮発性半導体記憶装置
US9558804B2 (en) * 2014-07-23 2017-01-31 Namlab Ggmbh Charge storage ferroelectric memory hybrid and erase scheme
KR102005845B1 (ko) * 2015-03-07 2019-08-01 에스케이하이닉스 주식회사 비휘발성 메모리 소자 및 이의 구동 방법
TW201637172A (zh) * 2015-04-14 2016-10-16 國立交通大學 記憶體結構
US10090036B2 (en) * 2015-12-21 2018-10-02 Imec Vzw Non-volatile memory cell having pinch-off ferroelectric field effect transistor
US10068912B1 (en) * 2017-06-05 2018-09-04 Cypress Semiconductor Corporation Method of reducing charge loss in non-volatile memories

Also Published As

Publication number Publication date
KR20190105179A (ko) 2019-09-16
CN110189777B (zh) 2024-02-27
KR102025007B1 (ko) 2019-09-24
US10210921B1 (en) 2019-02-19
CN110189777A (zh) 2019-08-30

Similar Documents

Publication Publication Date Title
KR102025007B9 (ko) 비휘발성 강유전체 메모리 소자 및 이의 구동 방법
SG10201905109VA (en) Non-volatile memory device and erasing method of the same
EP3827432C0 (en) THREE-DIMENSIONAL FERROELECTRIC STORAGE DEVICES
SG11202104885PA (en) Novel 3d nand memory device and method of forming the same
EP3891811A4 (en) NON-VOLATILE STORAGE DEVICE AND METHOD OF MAKING THERE
EP3138128A4 (en) Ferroelectric memory and methods of forming the same
EP3881355A4 (en) FERROELECTRIC MEMORY DEVICE WITH SELECTION GATE TRANSISTOR AND METHOD OF MANUFACTURE THEREOF
SG10201909446PA (en) Semiconductor memory device and method for forming the same
SG10201908263RA (en) Nonvolatile memory device and operating method of the same
EP3980995A4 (en) METHOD OF PROGRAMMING A STORAGE DEVICE AND ASSOCIATED STORAGE DEVICE
EP3404661A4 (en) METHOD FOR UPDATING FLASH MEMORY DEVICES AND DEVICE
EP3493179C0 (en) DRIVING ASSISTANCE METHOD AND DRIVING ASSISTANCE DEVICE USING THE SAME
SG10201912041UA (en) Memory device and method of forming the same
EP3844810A4 (en) BONDED STORAGE DEVICE AND METHOD OF MANUFACTURE THERE
EP3507806A4 (en) DEVICES AND METHOD WITH A FERROELECTRIC MEMORY AND FOR ACCESSING A FERROELECTRIC MEMORY
EP3514690A4 (en) METHOD FOR NONVOLATILE MEMORY PERSISTENCE AND COMPUTER DEVICE
EP3891745A4 (en) METHOD FOR PROGRAMMING A MEMORY DEVICE AND ASSOCIATED MEMORY DEVICE
SG10202006171VA (en) Nonvolatile memory device
EP3881322A4 (en) NON-VOLATILE MEMORY DEVICE AND CONTROL METHOD
SG10201901589RA (en) Solid state drive and a memory allocation method thereof
EP3811409A4 (en) NEW NON-ET MEMORY DEVICE AND ITS TRAINING PROCESS
SG10201907763SA (en) Nonvolatile Memory Device And Method For Fabricating The Same
EP3895213A4 (en) FERROELECTRIC MEMORY DEVICE CONTAINING A SERIES-CONNECTED SELECTION GRID TRANSISTOR AND METHOD FOR FORMING IT
EP3912164A4 (en) NON-VOLATILE MEMORY DEVICE AND CONTROL METHOD
SG10202002136TA (en) Nonvolatile memory device and method for fabricating the same

Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Re-publication after modification of scope of protection [patent]