KR101945315B1 - 발광소자, 표시장치, 조명장치 및 그 제조방법 - Google Patents

발광소자, 표시장치, 조명장치 및 그 제조방법 Download PDF

Info

Publication number
KR101945315B1
KR101945315B1 KR1020120013220A KR20120013220A KR101945315B1 KR 101945315 B1 KR101945315 B1 KR 101945315B1 KR 1020120013220 A KR1020120013220 A KR 1020120013220A KR 20120013220 A KR20120013220 A KR 20120013220A KR 101945315 B1 KR101945315 B1 KR 101945315B1
Authority
KR
South Korea
Prior art keywords
layer
light emitting
conductive layer
oxide
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020120013220A
Other languages
English (en)
Korean (ko)
Other versions
KR20120092519A (ko
Inventor
토시키 사사키
노조무 스기사와
히사오 이케다
사토시 세오
노부하루 오사와
순페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20120092519A publication Critical patent/KR20120092519A/ko
Application granted granted Critical
Publication of KR101945315B1 publication Critical patent/KR101945315B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020120013220A 2011-02-11 2012-02-09 발광소자, 표시장치, 조명장치 및 그 제조방법 Expired - Fee Related KR101945315B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-027958 2011-02-11
JP2011027958 2011-02-11

Publications (2)

Publication Number Publication Date
KR20120092519A KR20120092519A (ko) 2012-08-21
KR101945315B1 true KR101945315B1 (ko) 2019-02-07

Family

ID=45655612

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120013220A Expired - Fee Related KR101945315B1 (ko) 2011-02-11 2012-02-09 발광소자, 표시장치, 조명장치 및 그 제조방법

Country Status (6)

Country Link
US (1) US9564609B2 (enExample)
EP (1) EP2487733B1 (enExample)
JP (1) JP5969216B2 (enExample)
KR (1) KR101945315B1 (enExample)
CN (1) CN102637830B (enExample)
TW (1) TWI575774B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6157804B2 (ja) 2011-04-29 2017-07-05 株式会社半導体エネルギー研究所 発光素子
KR101917752B1 (ko) 2011-05-11 2018-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 모듈, 발광 패널, 발광 장치
US9721998B2 (en) 2011-11-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
DE102013112602B4 (de) 2012-12-18 2020-11-12 Lg Display Co., Ltd. Weiße organische Lichtemissionsvorrichtung
JP6099420B2 (ja) 2013-02-08 2017-03-22 株式会社半導体エネルギー研究所 発光装置
JP6615253B2 (ja) * 2013-04-30 2019-12-04 キヤノン株式会社 有機発光素子
JP2015049947A (ja) * 2013-08-29 2015-03-16 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置
JP6488082B2 (ja) * 2013-12-02 2019-03-20 株式会社半導体エネルギー研究所 発光装置、電子機器、および照明装置
TWI745740B (zh) 2014-05-15 2021-11-11 日商半導體能源研究所股份有限公司 發光元件、發光裝置、電子裝置以及照明設備
US9874775B2 (en) 2014-05-28 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9343691B2 (en) 2014-08-08 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
KR102377360B1 (ko) 2014-08-08 2022-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 조명 장치, 표시 장치, 디스플레이 패널, 전자 기기
KR20160028580A (ko) * 2014-09-03 2016-03-14 삼성디스플레이 주식회사 컬러 변환층을 포함하는 표시장치
WO2016063169A1 (en) 2014-10-23 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
US10680017B2 (en) 2014-11-07 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
KR102294413B1 (ko) 2014-11-18 2021-08-27 삼성디스플레이 주식회사 유기발광 표시장치
CN104393023B (zh) * 2014-12-01 2018-01-26 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
KR102543330B1 (ko) 2015-02-25 2023-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 소자, 표시 장치, 전자 기기, 및 조명 장치
JP7016633B2 (ja) 2016-10-28 2022-02-07 キヤノン株式会社 複数の有機ｅｌ素子を有する白色発光装置
KR20190001629A (ko) * 2017-06-26 2019-01-07 삼성디스플레이 주식회사 발광소자 및 표시패널의 제조방법
US11462711B2 (en) 2017-06-26 2022-10-04 Samsung Display Co., Ltd. Light-emitting device and method of fabricating display panel therewith
WO2020089999A1 (ja) * 2018-10-30 2020-05-07 シャープ株式会社 発光素子、発光素子の製造方法
WO2021044634A1 (ja) * 2019-09-06 2021-03-11 シャープ株式会社 表示装置、およびその製造方法
KR102806843B1 (ko) * 2020-07-01 2025-05-12 삼성전자주식회사 발광 소자 및 이를 포함하는 표시 장치
US20240090253A1 (en) * 2021-01-28 2024-03-14 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20230000027A (ko) * 2021-06-23 2023-01-02 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
US12389744B2 (en) * 2021-10-28 2025-08-12 Samsung Electronics Co., Ltd. Electroluminescent device, production method thereof, and display device including the same
CN115915827A (zh) * 2022-10-08 2023-04-04 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200532341A (en) 2004-03-23 2005-10-01 Ritek Corp Electrode type reflector and transflective liquid crystal display
US20070096613A1 (en) * 2005-11-02 2007-05-03 Hyun-Eok Shin Organic light-emitting display device and method of fabricating the same
US20090114926A1 (en) * 2007-05-18 2009-05-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US20090160323A1 (en) * 2007-12-03 2009-06-25 Semiconductor Energy Laboratory Co., Ltd. Carbazole Derivative, and Light-Emitting Element, Light-Emitting Device, and Electronic Device Using Carbazole Derivative
US20090224245A1 (en) * 2006-09-29 2009-09-10 Semiconductor Energy Laboratory Co., Ltd. Display device

Family Cites Families (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2636341B2 (ja) 1988-06-09 1997-07-30 日本電気株式会社 有機薄膜ｅｌ素子
JP2666428B2 (ja) 1988-11-18 1997-10-22 日本電気株式会社 有機薄膜ｅｌ素子
JP2773297B2 (ja) 1989-09-28 1998-07-09 日本電気株式会社 有機薄膜ｅｌ素子
JPH03190088A (ja) 1989-12-20 1991-08-20 Sanyo Electric Co Ltd 有機ｅｌ素子
JP2926845B2 (ja) 1990-03-23 1999-07-28 日本電気株式会社 有機薄膜ｅｌ素子
JPH04357694A (ja) 1991-06-03 1992-12-10 Denki Kagaku Kogyo Kk 有機薄膜ｅｌ素子
JPH05182766A (ja) 1991-12-26 1993-07-23 Toyota Central Res & Dev Lab Inc 薄膜ｅｌ素子
JPH06267658A (ja) 1993-03-09 1994-09-22 Mitsubishi Kasei Corp 有機ｅｌ素子
JP2797883B2 (ja) 1993-03-18 1998-09-17 株式会社日立製作所 多色発光素子とその基板
JP3189480B2 (ja) 1993-04-02 2001-07-16 富士電機株式会社 有機薄膜発光素子
JPH07312289A (ja) 1994-05-18 1995-11-28 Mitsubishi Chem Corp 有機電界発光素子
JP2824411B2 (ja) 1995-08-25 1998-11-11 株式会社豊田中央研究所 有機薄膜発光素子
JPH10172762A (ja) 1996-12-11 1998-06-26 Sanyo Electric Co Ltd エレクトロルミネッセンス素子を用いた表示装置の製造方法及び表示装置
JPH10270171A (ja) 1997-01-27 1998-10-09 Junji Kido 有機エレクトロルミネッセント素子
US5989737A (en) 1997-02-27 1999-11-23 Xerox Corporation Organic electroluminescent devices
JP3571171B2 (ja) 1997-05-08 2004-09-29 出光興産株式会社 有機エレクトロルミネッセンス素子
GB9803764D0 (en) 1998-02-23 1998-04-15 Cambridge Display Tech Ltd Display devices
JPH11251067A (ja) 1998-03-02 1999-09-17 Junji Kido 有機エレクトロルミネッセント素子
JP3468089B2 (ja) 1998-04-07 2003-11-17 松下電器産業株式会社 有機電界発光素子
JPH11307264A (ja) 1998-04-17 1999-11-05 Matsushita Electric Ind Co Ltd 有機電界発光素子
JPH11307259A (ja) 1998-04-23 1999-11-05 Tdk Corp 有機ｅｌ素子
WO2000001203A1 (en) 1998-06-26 2000-01-06 Idemitsu Kosan Co., Ltd. Luminescent device
JP4198253B2 (ja) 1999-02-02 2008-12-17 出光興産株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP4420486B2 (ja) 1999-04-30 2010-02-24 出光興産株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP2000315581A (ja) 1999-04-30 2000-11-14 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子およびその製造方法
TW483287B (en) * 1999-06-21 2002-04-11 Semiconductor Energy Lab EL display device, driving method thereof, and electronic equipment provided with the EL display device
JP4666722B2 (ja) 1999-06-28 2011-04-06 株式会社半導体エネルギー研究所 Ｅｌ表示装置及び電子装置
TW543206B (en) 1999-06-28 2003-07-21 Semiconductor Energy Lab EL display device and electronic device
JP2001043980A (ja) 1999-07-29 2001-02-16 Sony Corp 有機エレクトロルミネッセンス素子及び表示装置
JP4824848B2 (ja) 2000-02-29 2011-11-30 淳二 城戸 有機エレクトロルミネッセント素子、有機エレクトロルミネッセント素子群及びその発光スペクトルの特定方法
TW474114B (en) 1999-09-29 2002-01-21 Junji Kido Organic electroluminescent device, organic electroluminescent device assembly and method of controlling the emission spectrum in the device
JP4780826B2 (ja) 1999-10-12 2011-09-28 株式会社半導体エネルギー研究所 電気光学装置の作製方法
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
TW511298B (en) 1999-12-15 2002-11-21 Semiconductor Energy Lab EL display device
US20010053559A1 (en) 2000-01-25 2001-12-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
US6559594B2 (en) 2000-02-03 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR20010085420A (ko) 2000-02-23 2001-09-07 기타지마 요시토시 전계발광소자와 그 제조방법
TW521303B (en) 2000-02-28 2003-02-21 Semiconductor Energy Lab Electronic device
US6608449B2 (en) 2000-05-08 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Luminescent apparatus and method of manufacturing the same
US6692845B2 (en) 2000-05-12 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US6483236B1 (en) 2000-05-24 2002-11-19 Eastman Kodak Company Low-voltage organic light-emitting device
US6489638B2 (en) 2000-06-23 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
DE10058578C2 (de) 2000-11-20 2002-11-28 Univ Dresden Tech Lichtemittierendes Bauelement mit organischen Schichten
SG118118A1 (en) 2001-02-22 2006-01-27 Semiconductor Energy Lab Organic light emitting device and display using the same
JP3955744B2 (ja) 2001-05-14 2007-08-08 淳二 城戸 有機薄膜素子の製造方法
JP3773423B2 (ja) 2001-06-11 2006-05-10 Ｔｄｋ株式会社 有機ｅｌ素子
US6788108B2 (en) * 2001-07-30 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2003109775A (ja) 2001-09-28 2003-04-11 Sony Corp 有機電界発光素子
JP4149168B2 (ja) * 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
US7141817B2 (en) 2001-11-30 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP3742054B2 (ja) 2001-11-30 2006-02-01 株式会社半導体エネルギー研究所 表示装置
TWI258317B (en) 2002-01-25 2006-07-11 Semiconductor Energy Lab A display device and method for manufacturing thereof
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7786496B2 (en) 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP4683825B2 (ja) * 2002-04-24 2011-05-18 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7158161B2 (en) 2002-09-20 2007-01-02 Matsushita Electric Industrial Co., Ltd. Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element
JP2004134395A (ja) 2002-09-20 2004-04-30 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセンス素子およびそれを用いた露光装置ならびに画像形成装置
JP2004178930A (ja) 2002-11-26 2004-06-24 Sony Corp 発光素子およびこれを用いた表示装置
JP4401657B2 (ja) * 2003-01-10 2010-01-20 株式会社半導体エネルギー研究所 発光装置の製造方法
US20040140758A1 (en) 2003-01-17 2004-07-22 Eastman Kodak Company Organic light emitting device (OLED) display with improved light emission using a metallic anode
JP4624653B2 (ja) 2003-05-20 2011-02-02 出光興産株式会社 有機エレクトロルミネッセンス素子及び表示装置
US6909233B2 (en) * 2003-06-11 2005-06-21 Eastman Kodak Company Stacked OLED display having improved efficiency
JP2005026121A (ja) 2003-07-03 2005-01-27 Fujitsu Ltd 有機ｅｌ素子及びその製造方法並びに有機ｅｌディスプレイ
JP4396163B2 (ja) 2003-07-08 2010-01-13 株式会社デンソー 有機ｅｌ素子
AU2003294180A1 (en) 2003-07-09 2005-01-28 Matsushita Electric Industrial Co., Ltd. Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element
KR100546662B1 (ko) 2003-08-05 2006-01-26 엘지전자 주식회사 유기 ｅｌ 소자
KR100543005B1 (ko) * 2003-09-18 2006-01-20 삼성에스디아이 주식회사 능동 매트릭스 유기전계발광표시장치
KR101286219B1 (ko) 2003-09-26 2013-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자의 제조방법
JP4476594B2 (ja) 2003-10-17 2010-06-09 淳二 城戸 有機エレクトロルミネッセント素子
JP4683829B2 (ja) 2003-10-17 2011-05-18 淳二 城戸 有機エレクトロルミネッセント素子及びその製造方法
TW200515836A (en) 2003-10-22 2005-05-01 Hannstar Display Corp Organic electroluminescent element
JP4243237B2 (ja) 2003-11-10 2009-03-25 淳二 城戸 有機素子、有機ｅｌ素子、有機太陽電池、及び、有機ｆｅｔ構造、並びに、有機素子の製造方法
JP4300176B2 (ja) 2003-11-13 2009-07-22 ローム株式会社 有機エレクトロルミネッセント素子
US7374828B2 (en) 2003-12-05 2008-05-20 Eastman Kodak Company Organic electroluminescent devices with additive
EP1695396B1 (en) 2003-12-16 2009-06-03 Panasonic Corporation Organic electroluminescent device and method for manufacturing the same
JP2005251587A (ja) 2004-03-04 2005-09-15 Tdk Corp 有機ｅｌ素子
KR100623252B1 (ko) * 2004-04-07 2006-09-18 삼성에스디아이 주식회사 전면 발광 유기 전계 발광 소자 및 그의 제조방법
US7521368B2 (en) * 2004-05-07 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20060046476A (ko) 2004-06-18 2006-05-17 산요덴키가부시키가이샤 일렉트로루미네센스 패널
JP4731211B2 (ja) 2004-06-18 2011-07-20 三洋電機株式会社 エレクトロルミネッセンスパネル
JP4925569B2 (ja) 2004-07-08 2012-04-25 ローム株式会社 有機エレクトロルミネッセント素子
JP4689439B2 (ja) * 2004-11-04 2011-05-25 株式会社半導体エネルギー研究所 発光装置
US20060091397A1 (en) * 2004-11-04 2006-05-04 Kengo Akimoto Display device and method for manufacturing the same
TWI242596B (en) * 2004-12-22 2005-11-01 Ind Tech Res Inst Organometallic compound and organic electroluminescent device including the same
US9530968B2 (en) 2005-02-15 2016-12-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7649197B2 (en) * 2005-03-23 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Composite material, and light emitting element and light emitting device using the composite material
US7851989B2 (en) 2005-03-25 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
EP1724852A3 (en) 2005-05-20 2010-01-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US7687986B2 (en) 2005-05-27 2010-03-30 Fujifilm Corporation Organic EL device having hole-injection layer doped with metallic oxide
WO2007043371A1 (en) 2005-10-05 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Stilbene derivatives, light-emitting element and light-emitting device
CN101667544B (zh) * 2005-11-15 2012-09-05 株式会社半导体能源研究所 半导体器件及其制造方法
JP4896544B2 (ja) 2006-03-06 2012-03-14 富士フイルム株式会社 有機電界発光素子
JP4908583B2 (ja) 2006-05-10 2012-04-04 エルジー・ケム・リミテッド 有機電子素子の製造方法およびそれによって製造された有機電子素子
JP5117001B2 (ja) * 2006-07-07 2013-01-09 株式会社ジャパンディスプレイイースト 有機ｅｌ表示装置
CN101536608B (zh) 2006-09-07 2015-12-09 法国圣-戈班玻璃公司 用于有机发光装置的基板、其用途和制备方法，以及有机发光装置
US8339031B2 (en) 2006-09-07 2012-12-25 Saint-Gobain Glass France Substrate for an organic light-emitting device, use and process for manufacturing this substrate, and organic light-emitting device
JP5060904B2 (ja) 2006-10-13 2012-10-31 株式会社神戸製鋼所 反射電極および表示デバイス
WO2008056746A1 (en) * 2006-11-09 2008-05-15 Nippon Steel Chemical Co., Ltd. Compound for organic electroluminescent device and organic electroluminescent device
EP2408268A1 (fr) 2006-11-17 2012-01-18 Saint-Gobain Glass France Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant
JP5433154B2 (ja) * 2007-02-23 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101453829B1 (ko) * 2007-03-23 2014-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조 방법
JP5079421B2 (ja) * 2007-08-17 2012-11-21 国立大学法人九州大学 有機エレクトロルミネッセンス素子および有機レーザダイオード
TWI638583B (zh) 2007-09-27 2018-10-11 半導體能源研究所股份有限公司 發光元件，發光裝置，與電子設備
US7989305B2 (en) * 2007-10-10 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate using cluster ion
TWI479712B (zh) * 2007-10-19 2015-04-01 Semiconductor Energy Lab 發光裝置
KR100894066B1 (ko) * 2007-12-28 2009-04-24 삼성모바일디스플레이 주식회사 유기 발광 소자
JP2009176730A (ja) * 2007-12-28 2009-08-06 Sumitomo Chemical Co Ltd 高分子発光素子、製造方法及び高分子発光ディスプレイ装置
JP2010153365A (ja) * 2008-11-19 2010-07-08 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器及び照明装置
JP2010192413A (ja) 2009-01-22 2010-09-02 Sony Corp 有機電界発光素子および表示装置
KR101156428B1 (ko) 2009-06-01 2012-06-18 삼성모바일디스플레이주식회사 유기 발광 소자
JP2011027958A (ja) 2009-07-24 2011-02-10 Fujifilm Corp 表示装置およびその駆動制御方法
KR101894898B1 (ko) 2011-02-11 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 사용한 전자 기기
KR101917752B1 (ko) 2011-05-11 2018-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 모듈, 발광 패널, 발광 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200532341A (en) 2004-03-23 2005-10-01 Ritek Corp Electrode type reflector and transflective liquid crystal display
US20070096613A1 (en) * 2005-11-02 2007-05-03 Hyun-Eok Shin Organic light-emitting display device and method of fabricating the same
US20090224245A1 (en) * 2006-09-29 2009-09-10 Semiconductor Energy Laboratory Co., Ltd. Display device
US20090114926A1 (en) * 2007-05-18 2009-05-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US20090160323A1 (en) * 2007-12-03 2009-06-25 Semiconductor Energy Laboratory Co., Ltd. Carbazole Derivative, and Light-Emitting Element, Light-Emitting Device, and Electronic Device Using Carbazole Derivative

Also Published As

Publication number Publication date
TWI575774B (zh) 2017-03-21
JP5969216B2 (ja) 2016-08-17
TW201238082A (en) 2012-09-16
CN102637830B (zh) 2017-03-01
CN102637830A (zh) 2012-08-15
EP2487733B1 (en) 2020-01-22
JP2012182119A (ja) 2012-09-20
US9564609B2 (en) 2017-02-07
EP2487733A1 (en) 2012-08-15
US20120205701A1 (en) 2012-08-16
KR20120092519A (ko) 2012-08-21

Similar Documents

Publication Publication Date Title
KR101945315B1 (ko) 발광소자, 표시장치, 조명장치 및 그 제조방법
JP6619466B2 (ja) 発光素子及び発光装置
KR101880183B1 (ko) 발광 장치 및 표시 장치
JP2024038284A (ja) 表示装置
US10164203B2 (en) Light-emitting element, light-emitting device, electronic device, and lighting device
US10748497B2 (en) Light-emitting element, light-emitting device, electronic device, and lighting device
US20250386666A1 (en) Light-emitting device, light-emitting apparatus, electronic device, and lighting device
US20240224575A1 (en) Light-Emitting Device
JP5902469B2 (ja) 照明装置の作製方法
JP2022173506A (ja) 発光素子
JP5860677B2 (ja) 発光素子、発光素子の作製方法、及び照明装置
JP2022159081A (ja) 発光デバイス用混合材料
WO2022172130A1 (ja) 発光デバイス、発光装置、電子機器および照明装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U11-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PC1903 Unpaid annual fee

Not in force date: 20220130

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

St.27 status event code: A-4-4-U10-U13-oth-PC1903

PC1903 Unpaid annual fee

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220130

St.27 status event code: N-4-6-H10-H13-oth-PC1903

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000