JP5969216B2 - 発光素子、表示装置、照明装置、及びこれらの作製方法 - Google Patents

発光素子、表示装置、照明装置、及びこれらの作製方法 Download PDF

Info

Publication number
JP5969216B2
JP5969216B2 JP2012023596A JP2012023596A JP5969216B2 JP 5969216 B2 JP5969216 B2 JP 5969216B2 JP 2012023596 A JP2012023596 A JP 2012023596A JP 2012023596 A JP2012023596 A JP 2012023596A JP 5969216 B2 JP5969216 B2 JP 5969216B2
Authority
JP
Japan
Prior art keywords
layer
light
electrode
light emitting
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2012023596A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012182119A (ja
JP2012182119A5 (enExample
Inventor
俊毅 佐々木
俊毅 佐々木
希 杉澤
希 杉澤
池田　寿雄
寿雄 池田
瀬尾　哲史
哲史 瀬尾
信晴 大澤
信晴 大澤
山崎　舜平
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2012023596A priority Critical patent/JP5969216B2/ja
Publication of JP2012182119A publication Critical patent/JP2012182119A/ja
Publication of JP2012182119A5 publication Critical patent/JP2012182119A5/ja
Application granted granted Critical
Publication of JP5969216B2 publication Critical patent/JP5969216B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2012023596A 2011-02-11 2012-02-07 発光素子、表示装置、照明装置、及びこれらの作製方法 Expired - Fee Related JP5969216B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012023596A JP5969216B2 (ja) 2011-02-11 2012-02-07 発光素子、表示装置、照明装置、及びこれらの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011027958 2011-02-11
JP2011027958 2011-02-11
JP2012023596A JP5969216B2 (ja) 2011-02-11 2012-02-07 発光素子、表示装置、照明装置、及びこれらの作製方法

Publications (3)

Publication Number Publication Date
JP2012182119A JP2012182119A (ja) 2012-09-20
JP2012182119A5 JP2012182119A5 (enExample) 2015-03-19
JP5969216B2 true JP5969216B2 (ja) 2016-08-17

Family

ID=45655612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012023596A Expired - Fee Related JP5969216B2 (ja) 2011-02-11 2012-02-07 発光素子、表示装置、照明装置、及びこれらの作製方法

Country Status (6)

Country Link
US (1) US9564609B2 (enExample)
EP (1) EP2487733B1 (enExample)
JP (1) JP5969216B2 (enExample)
KR (1) KR101945315B1 (enExample)
CN (1) CN102637830B (enExample)
TW (1) TWI575774B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6157804B2 (ja) 2011-04-29 2017-07-05 株式会社半導体エネルギー研究所 発光素子
KR101917752B1 (ko) 2011-05-11 2018-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 모듈, 발광 패널, 발광 장치
US9721998B2 (en) 2011-11-04 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method thereof
DE102013112602B4 (de) * 2012-12-18 2020-11-12 Lg Display Co., Ltd. Weiße organische Lichtemissionsvorrichtung
JP6099420B2 (ja) 2013-02-08 2017-03-22 株式会社半導体エネルギー研究所 発光装置
JP6615253B2 (ja) * 2013-04-30 2019-12-04 キヤノン株式会社 有機発光素子
JP2015049947A (ja) * 2013-08-29 2015-03-16 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置
JP6488082B2 (ja) * 2013-12-02 2019-03-20 株式会社半導体エネルギー研究所 発光装置、電子機器、および照明装置
TWI745740B (zh) 2014-05-15 2021-11-11 日商半導體能源研究所股份有限公司 發光元件、發光裝置、電子裝置以及照明設備
US9874775B2 (en) 2014-05-28 2018-01-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US9343691B2 (en) 2014-08-08 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
KR102377360B1 (ko) 2014-08-08 2022-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 조명 장치, 표시 장치, 디스플레이 패널, 전자 기기
KR20160028580A (ko) * 2014-09-03 2016-03-14 삼성디스플레이 주식회사 컬러 변환층을 포함하는 표시장치
WO2016063169A1 (en) 2014-10-23 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
US10680017B2 (en) 2014-11-07 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
KR102294413B1 (ko) * 2014-11-18 2021-08-27 삼성디스플레이 주식회사 유기발광 표시장치
CN104393023B (zh) * 2014-12-01 2018-01-26 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
KR102543330B1 (ko) 2015-02-25 2023-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 소자, 표시 장치, 전자 기기, 및 조명 장치
JP7016633B2 (ja) 2016-10-28 2022-02-07 キヤノン株式会社 複数の有機ｅｌ素子を有する白色発光装置
KR20190001629A (ko) * 2017-06-26 2019-01-07 삼성디스플레이 주식회사 발광소자 및 표시패널의 제조방법
US11462711B2 (en) 2017-06-26 2022-10-04 Samsung Display Co., Ltd. Light-emitting device and method of fabricating display panel therewith
WO2020089999A1 (ja) * 2018-10-30 2020-05-07 シャープ株式会社 発光素子、発光素子の製造方法
WO2021044634A1 (ja) * 2019-09-06 2021-03-11 シャープ株式会社 表示装置、およびその製造方法
KR102806843B1 (ko) * 2020-07-01 2025-05-12 삼성전자주식회사 발광 소자 및 이를 포함하는 표시 장치
KR20230000027A (ko) * 2021-06-23 2023-01-02 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
US12389744B2 (en) * 2021-10-28 2025-08-12 Samsung Electronics Co., Ltd. Electroluminescent device, production method thereof, and display device including the same
CN115915827A (zh) * 2022-10-08 2023-04-04 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法

Family Cites Families (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2636341B2 (ja) 1988-06-09 1997-07-30 日本電気株式会社 有機薄膜ｅｌ素子
JP2666428B2 (ja) 1988-11-18 1997-10-22 日本電気株式会社 有機薄膜ｅｌ素子
JP2773297B2 (ja) 1989-09-28 1998-07-09 日本電気株式会社 有機薄膜ｅｌ素子
JPH03190088A (ja) 1989-12-20 1991-08-20 Sanyo Electric Co Ltd 有機ｅｌ素子
JP2926845B2 (ja) 1990-03-23 1999-07-28 日本電気株式会社 有機薄膜ｅｌ素子
JPH04357694A (ja) 1991-06-03 1992-12-10 Denki Kagaku Kogyo Kk 有機薄膜ｅｌ素子
JPH05182766A (ja) 1991-12-26 1993-07-23 Toyota Central Res & Dev Lab Inc 薄膜ｅｌ素子
JPH06267658A (ja) 1993-03-09 1994-09-22 Mitsubishi Kasei Corp 有機ｅｌ素子
JP2797883B2 (ja) 1993-03-18 1998-09-17 株式会社日立製作所 多色発光素子とその基板
JP3189480B2 (ja) 1993-04-02 2001-07-16 富士電機株式会社 有機薄膜発光素子
JPH07312289A (ja) 1994-05-18 1995-11-28 Mitsubishi Chem Corp 有機電界発光素子
JP2824411B2 (ja) 1995-08-25 1998-11-11 株式会社豊田中央研究所 有機薄膜発光素子
JPH10172762A (ja) 1996-12-11 1998-06-26 Sanyo Electric Co Ltd エレクトロルミネッセンス素子を用いた表示装置の製造方法及び表示装置
JPH10270171A (ja) 1997-01-27 1998-10-09 Junji Kido 有機エレクトロルミネッセント素子
US5989737A (en) 1997-02-27 1999-11-23 Xerox Corporation Organic electroluminescent devices
JP3571171B2 (ja) 1997-05-08 2004-09-29 出光興産株式会社 有機エレクトロルミネッセンス素子
GB9803764D0 (en) 1998-02-23 1998-04-15 Cambridge Display Tech Ltd Display devices
JPH11251067A (ja) 1998-03-02 1999-09-17 Junji Kido 有機エレクトロルミネッセント素子
JP3468089B2 (ja) 1998-04-07 2003-11-17 松下電器産業株式会社 有機電界発光素子
JPH11307264A (ja) 1998-04-17 1999-11-05 Matsushita Electric Ind Co Ltd 有機電界発光素子
JPH11307259A (ja) 1998-04-23 1999-11-05 Tdk Corp 有機ｅｌ素子
KR100637988B1 (ko) 1998-06-26 2006-10-23 이데미쓰 고산 가부시키가이샤 발광 장치
JP4198253B2 (ja) 1999-02-02 2008-12-17 出光興産株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP4420486B2 (ja) 1999-04-30 2010-02-24 出光興産株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP2000315581A (ja) 1999-04-30 2000-11-14 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子およびその製造方法
JP5210473B2 (ja) * 1999-06-21 2013-06-12 株式会社半導体エネルギー研究所 表示装置
JP4666722B2 (ja) 1999-06-28 2011-04-06 株式会社半導体エネルギー研究所 Ｅｌ表示装置及び電子装置
TW515109B (en) 1999-06-28 2002-12-21 Semiconductor Energy Lab EL display device and electronic device
JP2001043980A (ja) 1999-07-29 2001-02-16 Sony Corp 有機エレクトロルミネッセンス素子及び表示装置
JP4824848B2 (ja) 2000-02-29 2011-11-30 淳二 城戸 有機エレクトロルミネッセント素子、有機エレクトロルミネッセント素子群及びその発光スペクトルの特定方法
TW474114B (en) 1999-09-29 2002-01-21 Junji Kido Organic electroluminescent device, organic electroluminescent device assembly and method of controlling the emission spectrum in the device
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
JP4780826B2 (ja) 1999-10-12 2011-09-28 株式会社半導体エネルギー研究所 電気光学装置の作製方法
TW511298B (en) 1999-12-15 2002-11-21 Semiconductor Energy Lab EL display device
US20010053559A1 (en) 2000-01-25 2001-12-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
US6559594B2 (en) 2000-02-03 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR20010085420A (ko) 2000-02-23 2001-09-07 기타지마 요시토시 전계발광소자와 그 제조방법
TW521303B (en) 2000-02-28 2003-02-21 Semiconductor Energy Lab Electronic device
US6608449B2 (en) 2000-05-08 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Luminescent apparatus and method of manufacturing the same
US6692845B2 (en) 2000-05-12 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US6483236B1 (en) 2000-05-24 2002-11-19 Eastman Kodak Company Low-voltage organic light-emitting device
US6489638B2 (en) 2000-06-23 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
DE10058578C2 (de) 2000-11-20 2002-11-28 Univ Dresden Tech Lichtemittierendes Bauelement mit organischen Schichten
SG118118A1 (en) 2001-02-22 2006-01-27 Semiconductor Energy Lab Organic light emitting device and display using the same
JP3955744B2 (ja) 2001-05-14 2007-08-08 淳二 城戸 有機薄膜素子の製造方法
JP3773423B2 (ja) 2001-06-11 2006-05-10 Ｔｄｋ株式会社 有機ｅｌ素子
US6788108B2 (en) * 2001-07-30 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2003109775A (ja) 2001-09-28 2003-04-11 Sony Corp 有機電界発光素子
JP4149168B2 (ja) * 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
JP3742054B2 (ja) 2001-11-30 2006-02-01 株式会社半導体エネルギー研究所 表示装置
US7141817B2 (en) 2001-11-30 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
TWI258317B (en) 2002-01-25 2006-07-11 Semiconductor Energy Lab A display device and method for manufacturing thereof
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
JP4683825B2 (ja) * 2002-04-24 2011-05-18 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US7786496B2 (en) 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
US7158161B2 (en) 2002-09-20 2007-01-02 Matsushita Electric Industrial Co., Ltd. Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element
JP2004134395A (ja) 2002-09-20 2004-04-30 Matsushita Electric Ind Co Ltd 有機エレクトロルミネッセンス素子およびそれを用いた露光装置ならびに画像形成装置
JP2004178930A (ja) 2002-11-26 2004-06-24 Sony Corp 発光素子およびこれを用いた表示装置
JP4401657B2 (ja) * 2003-01-10 2010-01-20 株式会社半導体エネルギー研究所 発光装置の製造方法
US20040140758A1 (en) 2003-01-17 2004-07-22 Eastman Kodak Company Organic light emitting device (OLED) display with improved light emission using a metallic anode
JP4624653B2 (ja) 2003-05-20 2011-02-02 出光興産株式会社 有機エレクトロルミネッセンス素子及び表示装置
US6909233B2 (en) * 2003-06-11 2005-06-21 Eastman Kodak Company Stacked OLED display having improved efficiency
JP2005026121A (ja) 2003-07-03 2005-01-27 Fujitsu Ltd 有機ｅｌ素子及びその製造方法並びに有機ｅｌディスプレイ
JP4396163B2 (ja) 2003-07-08 2010-01-13 株式会社デンソー 有機ｅｌ素子
WO2005006460A1 (en) 2003-07-09 2005-01-20 Matsushita Electric Industrial Co., Ltd. Organic electroluminescence element and an exposure unit and image-forming apparatus both using the element
KR100546662B1 (ko) 2003-08-05 2006-01-26 엘지전자 주식회사 유기 ｅｌ 소자
KR100543005B1 (ko) * 2003-09-18 2006-01-20 삼성에스디아이 주식회사 능동 매트릭스 유기전계발광표시장치
WO2005031798A2 (en) 2003-09-26 2005-04-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
JP4683829B2 (ja) 2003-10-17 2011-05-18 淳二 城戸 有機エレクトロルミネッセント素子及びその製造方法
JP4476594B2 (ja) 2003-10-17 2010-06-09 淳二 城戸 有機エレクトロルミネッセント素子
TW200515836A (en) 2003-10-22 2005-05-01 Hannstar Display Corp Organic electroluminescent element
JP4243237B2 (ja) 2003-11-10 2009-03-25 淳二 城戸 有機素子、有機ｅｌ素子、有機太陽電池、及び、有機ｆｅｔ構造、並びに、有機素子の製造方法
JP4300176B2 (ja) 2003-11-13 2009-07-22 ローム株式会社 有機エレクトロルミネッセント素子
US7374828B2 (en) 2003-12-05 2008-05-20 Eastman Kodak Company Organic electroluminescent devices with additive
DE602004021424D1 (de) 2003-12-16 2009-07-16 Panasonic Corp Organisches elektrolumineszenzbauelement und herstellungsverfahren dafür
JP2005251587A (ja) 2004-03-04 2005-09-15 Tdk Corp 有機ｅｌ素子
TW200532341A (en) 2004-03-23 2005-10-01 Ritek Corp Electrode type reflector and transflective liquid crystal display
KR100623252B1 (ko) * 2004-04-07 2006-09-18 삼성에스디아이 주식회사 전면 발광 유기 전계 발광 소자 및 그의 제조방법
US7521368B2 (en) * 2004-05-07 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4731211B2 (ja) 2004-06-18 2011-07-20 三洋電機株式会社 エレクトロルミネッセンスパネル
TWI272039B (en) 2004-06-18 2007-01-21 Sanyo Electric Co Electroluminescence panel
JP4925569B2 (ja) 2004-07-08 2012-04-25 ローム株式会社 有機エレクトロルミネッセント素子
US20060091397A1 (en) 2004-11-04 2006-05-04 Kengo Akimoto Display device and method for manufacturing the same
JP4689439B2 (ja) * 2004-11-04 2011-05-25 株式会社半導体エネルギー研究所 発光装置
TWI242596B (en) * 2004-12-22 2005-11-01 Ind Tech Res Inst Organometallic compound and organic electroluminescent device including the same
US9530968B2 (en) 2005-02-15 2016-12-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7649197B2 (en) * 2005-03-23 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Composite material, and light emitting element and light emitting device using the composite material
US7851989B2 (en) * 2005-03-25 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
EP1724852A3 (en) 2005-05-20 2010-01-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US7687986B2 (en) 2005-05-27 2010-03-30 Fujifilm Corporation Organic EL device having hole-injection layer doped with metallic oxide
KR101425378B1 (ko) 2005-10-05 2014-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스틸벤 유도체, 발광 소자 및 발광 장치
KR100667082B1 (ko) * 2005-11-02 2007-01-10 삼성에스디아이 주식회사 유기전계발광소자 및 그 제조방법
KR101358954B1 (ko) * 2005-11-15 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 다이오드 및 액티브 매트릭스 표시장치
JP4896544B2 (ja) 2006-03-06 2012-03-14 富士フイルム株式会社 有機電界発光素子
US8338223B2 (en) 2006-05-10 2012-12-25 Lg Chem, Ltd. Fabrication method for organic electronic device and organic electronic device fabricated by the same method
JP5117001B2 (ja) * 2006-07-07 2013-01-09 株式会社ジャパンディスプレイイースト 有機ｅｌ表示装置
CN101536608B (zh) 2006-09-07 2015-12-09 法国圣-戈班玻璃公司 用于有机发光装置的基板、其用途和制备方法，以及有机发光装置
KR101700286B1 (ko) 2006-09-07 2017-02-13 쌩-고벵 글래스 프랑스 유기 발광 소자용 기판, 상기 기판 및 유기 발광 소자의 제조 방법 및 용도
JP5116277B2 (ja) * 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
JP5060904B2 (ja) 2006-10-13 2012-10-31 株式会社神戸製鋼所 反射電極および表示デバイス
WO2008056746A1 (en) * 2006-11-09 2008-05-15 Nippon Steel Chemical Co., Ltd. Compound for organic electroluminescent device and organic electroluminescent device
EP2090139A2 (fr) 2006-11-17 2009-08-19 Saint-Gobain Glass France Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant
JP5433154B2 (ja) * 2007-02-23 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101453829B1 (ko) * 2007-03-23 2014-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그 제조 방법
US8513678B2 (en) * 2007-05-18 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP5079421B2 (ja) * 2007-08-17 2012-11-21 国立大学法人九州大学 有機エレクトロルミネッセンス素子および有機レーザダイオード
TWI638583B (zh) 2007-09-27 2018-10-11 半導體能源研究所股份有限公司 發光元件，發光裝置，與電子設備
JP5522917B2 (ja) * 2007-10-10 2014-06-18 株式会社半導体エネルギー研究所 Ｓｏｉ基板の製造方法
US8040047B2 (en) * 2007-10-19 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
EP2757094A1 (en) * 2007-12-03 2014-07-23 Semiconductor Energy Laboratory Co., Ltd. Carbazole derivative, and light-emitting element, light-emitting device, and electronic device uing carbazole derivative
KR100894066B1 (ko) * 2007-12-28 2009-04-24 삼성모바일디스플레이 주식회사 유기 발광 소자
TWI578850B (zh) * 2007-12-28 2017-04-11 住友化學股份有限公司 高分子發光元件、製造方法以及高分子發光顯示裝置
JP2010153365A (ja) * 2008-11-19 2010-07-08 Semiconductor Energy Lab Co Ltd 発光素子、発光装置、電子機器及び照明装置
JP2010192413A (ja) 2009-01-22 2010-09-02 Sony Corp 有機電界発光素子および表示装置
KR101156428B1 (ko) 2009-06-01 2012-06-18 삼성모바일디스플레이주식회사 유기 발광 소자
JP2011027958A (ja) 2009-07-24 2011-02-10 Fujifilm Corp 表示装置およびその駆動制御方法
KR101894898B1 (ko) 2011-02-11 2018-09-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 사용한 전자 기기
KR101917752B1 (ko) 2011-05-11 2018-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 모듈, 발광 패널, 발광 장치

Also Published As

Publication number Publication date
CN102637830B (zh) 2017-03-01
JP2012182119A (ja) 2012-09-20
KR101945315B1 (ko) 2019-02-07
TW201238082A (en) 2012-09-16
US20120205701A1 (en) 2012-08-16
KR20120092519A (ko) 2012-08-21
CN102637830A (zh) 2012-08-15
EP2487733B1 (en) 2020-01-22
US9564609B2 (en) 2017-02-07
EP2487733A1 (en) 2012-08-15
TWI575774B (zh) 2017-03-21

Similar Documents

Publication Publication Date Title
JP5969216B2 (ja) 発光素子、表示装置、照明装置、及びこれらの作製方法
US11031439B2 (en) Light-emitting device and display device
US10741619B2 (en) Light-emitting device and display device
US9450209B2 (en) Light-emitting element, light-emitting device, and display device
US8803188B2 (en) Method for manufacturing light-emitting element, light-emitting element, Light-emitting device, lighting device, and electronic appliance
JP5902469B2 (ja) 照明装置の作製方法
JP5860677B2 (ja) 発光素子、発光素子の作製方法、及び照明装置
US20250386666A1 (en) Light-emitting device, light-emitting apparatus, electronic device, and lighting device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150128

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150128

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151109

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20151117

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160108

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160614

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160707

R150 Certificate of patent or registration of utility model

Ref document number: 5969216

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees