KR101846299B1 - 반도체 기판의 제조 방법 - Google Patents

반도체 기판의 제조 방법 Download PDF

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KR101846299B1
KR101846299B1 KR1020167003236A KR20167003236A KR101846299B1 KR 101846299 B1 KR101846299 B1 KR 101846299B1 KR 1020167003236 A KR1020167003236 A KR 1020167003236A KR 20167003236 A KR20167003236 A KR 20167003236A KR 101846299 B1 KR101846299 B1 KR 101846299B1
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amorphous layer
layer
substrate
amorphous
thickness
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KR20160040565A (ko
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코 이마오카
모토키 고바야시
히데츠구 우치다
쿠니아키 야기
타카미츠 가와하라
나오키 핫타
아키유키 미나미
토요카즈 사카타
토모아츠 마키노
히데키 다카기
유우이치 구라시마
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가부시키가이샤 사이콕스
고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼
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    • H01L21/2007—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H01L21/02065—
    • H01L21/02167—
    • H01L21/02592—
    • H01L21/02598—
    • H01L21/324—
    • H01L29/1608—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/126—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates characterised by the composition of the bonding layer, e.g. dopant concentration or stoichiometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Recrystallisation Techniques (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
KR1020167003236A 2013-07-05 2014-07-03 반도체 기판의 제조 방법 Active KR101846299B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013142151A JP6061251B2 (ja) 2013-07-05 2013-07-05 半導体基板の製造方法
JPJP-P-2013-142151 2013-07-05
PCT/JP2014/067777 WO2015002266A1 (ja) 2013-07-05 2014-07-03 半導体基板の製造方法

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KR20160040565A KR20160040565A (ko) 2016-04-14
KR101846299B1 true KR101846299B1 (ko) 2018-05-18

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US (1) US9761479B2 (https=)
EP (1) EP3018696B8 (https=)
JP (1) JP6061251B2 (https=)
KR (1) KR101846299B1 (https=)
CN (1) CN105474354B (https=)
WO (1) WO2015002266A1 (https=)

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JP2016139655A (ja) * 2015-01-26 2016-08-04 富士通株式会社 半導体装置及び半導体装置の製造方法
JP6298926B2 (ja) * 2015-03-04 2018-03-20 有限会社Ｍｔｅｃ 半導体基板の製造方法
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JP6544166B2 (ja) * 2015-09-14 2019-07-17 信越化学工業株式会社 ＳｉＣ複合基板の製造方法
JP6515757B2 (ja) 2015-09-15 2019-05-22 信越化学工業株式会社 ＳｉＣ複合基板の製造方法
JP6582779B2 (ja) * 2015-09-15 2019-10-02 信越化学工業株式会社 ＳｉＣ複合基板の製造方法
US10985204B2 (en) * 2016-02-16 2021-04-20 G-Ray Switzerland Sa Structures, systems and methods for electrical charge transport across bonded interfaces
JP6619874B2 (ja) 2016-04-05 2019-12-11 株式会社サイコックス 多結晶ＳｉＣ基板およびその製造方法
CN107958839B (zh) * 2016-10-18 2020-09-29 上海新昇半导体科技有限公司 晶圆键合方法及其键合装置
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WO2018159754A1 (ja) 2017-03-02 2018-09-07 信越化学工業株式会社 炭化珪素基板の製造方法及び炭化珪素基板
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JP7061747B2 (ja) * 2017-07-10 2022-05-02 株式会社タムラ製作所 半導体基板、半導体素子、及び半導体基板の製造方法
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JP6854516B2 (ja) * 2017-07-19 2021-04-07 株式会社テンシックス 化合物半導体基板及びその製造方法
KR102903523B1 (ko) * 2018-04-27 2025-12-23 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
JP2019210162A (ja) * 2018-05-31 2019-12-12 ローム株式会社 半導体基板構造体及びパワー半導体装置
JP2019210161A (ja) * 2018-05-31 2019-12-12 ローム株式会社 半導体基板構造体及びパワー半導体装置
JP7024668B2 (ja) * 2018-09-05 2022-02-24 株式会社Sumco Ｓｏｉウェーハ及びその製造方法
DE102018132447B4 (de) * 2018-12-17 2022-10-13 Infineon Technologies Ag Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
CN109986191A (zh) * 2019-04-15 2019-07-09 上海交通大学 一种应用于金属/高分子连接的表面处理方法
JP6737378B2 (ja) * 2019-05-09 2020-08-05 信越化学工業株式会社 ＳｉＣ複合基板
CN114008871A (zh) * 2019-06-18 2022-02-01 大学共同利用机关法人自然科学研究机构 光学元件的制造方法及光学元件
WO2021245724A1 (ja) 2020-06-01 2021-12-09 三菱電機株式会社 複合基板、複合基板の製造方法、半導体装置および半導体装置の製造方法
JP7625248B2 (ja) * 2021-01-20 2025-02-03 国立研究開発法人理化学研究所 接合体の製造方法および接合体
JP2023061509A (ja) 2021-10-20 2023-05-02 株式会社サイコックス 多結晶炭化珪素基板の製造方法
JP2023068782A (ja) * 2021-11-04 2023-05-18 株式会社サイコックス 半導体基板とその製造方法
FR3134228B1 (fr) 2022-03-30 2025-05-02 Mersen France Gennevilliers Procede de fabrication de carbure de silicium polycristallin utilisable pour la fabrication de substrats de circuits integres, et carbure de silicium ainsi obtenu
JP2023178892A (ja) * 2022-06-06 2023-12-18 株式会社サイコックス 陰極、高速原子ビーム線源、接合基板の製造方法、および、陰極の再生方法
JP2024025064A (ja) 2022-08-10 2024-02-26 株式会社サイコックス ＳｉＣ単結晶転写用複合基板、ＳｉＣ単結晶転写用複合基板の製造方法、およびＳｉＣ接合基板の製造方法
JP2024073797A (ja) 2022-11-18 2024-05-30 株式会社サイコックス 研磨組成物
FR3146237A1 (fr) 2023-02-24 2024-08-30 Mersen France Gennevilliers Plaque en SiC polycristallin dopé à planéité et conductivité électrique améliorées, et procédé de fabrication d’une telle plaque
JP2024121436A (ja) 2023-02-27 2024-09-06 住友金属鉱山株式会社 ＳｉＣ半導体装置用基板、ＳｉＣ接合基板、ＳｉＣ多結晶基板およびＳｉＣ多結晶基板の製造方法
KR20250164769A (ko) * 2023-03-21 2025-11-25 에베 그룹 에. 탈너 게엠베하 기판의 표면 처리를 위한 방법 및 이러한 기판을 또 다른 기판과 본딩하기 위한 방법 및 이러한 방법들을 수행하기 위한 장치
JP2024169169A (ja) 2023-05-25 2024-12-05 住友金属鉱山株式会社 ＳｉＣ半導体装置用基板、ＳｉＣ接合基板、ＳｉＣ多結晶基板およびＳｉＣ多結晶基板の製造方法
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US20160204023A1 (en) 2016-07-14
EP3018696B8 (en) 2022-02-23
CN105474354B (zh) 2018-04-17
US9761479B2 (en) 2017-09-12
EP3018696A1 (en) 2016-05-11
EP3018696A4 (en) 2017-03-15
KR20160040565A (ko) 2016-04-14
CN105474354A (zh) 2016-04-06
WO2015002266A1 (ja) 2015-01-08
JP6061251B2 (ja) 2017-01-18
EP3018696B1 (en) 2021-11-17
JP2015015401A (ja) 2015-01-22

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