KR101821851B1 - 다결정 실리콘의 제조 방법 및 다결정 실리콘 제조용 반응로 - Google Patents

다결정 실리콘의 제조 방법 및 다결정 실리콘 제조용 반응로 Download PDF

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KR101821851B1
KR101821851B1 KR1020147017485A KR20147017485A KR101821851B1 KR 101821851 B1 KR101821851 B1 KR 101821851B1 KR 1020147017485 A KR1020147017485 A KR 1020147017485A KR 20147017485 A KR20147017485 A KR 20147017485A KR 101821851 B1 KR101821851 B1 KR 101821851B1
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gas
reaction
supply amount
silicon
temperature
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KR20140103127A (ko
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야스시 구로사와
시게요시 네츠
나루히로 호시노
데츠로 오카다
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신에쓰 가가꾸 고교 가부시끼가이샤
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    • H01L21/2053—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
KR1020147017485A 2011-11-29 2012-11-29 다결정 실리콘의 제조 방법 및 다결정 실리콘 제조용 반응로 Active KR101821851B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-259971 2011-11-29
JP2011259971A JP5719282B2 (ja) 2011-11-29 2011-11-29 多結晶シリコンの製造方法
PCT/JP2012/007674 WO2013080556A1 (ja) 2011-11-29 2012-11-29 多結晶シリコンの製造方法および多結晶シリコン製造用反応炉

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Publication Number Publication Date
KR20140103127A KR20140103127A (ko) 2014-08-25
KR101821851B1 true KR101821851B1 (ko) 2018-01-24

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US (1) US9394606B2 (enExample)
EP (1) EP2786963B1 (enExample)
JP (1) JP5719282B2 (enExample)
KR (1) KR101821851B1 (enExample)
CN (1) CN103958406B (enExample)
MY (1) MY171148A (enExample)
RU (1) RU2581090C2 (enExample)
WO (1) WO2013080556A1 (enExample)

Families Citing this family (19)

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Publication number Priority date Publication date Assignee Title
JP6038625B2 (ja) * 2012-12-10 2016-12-07 株式会社トクヤマ 多結晶シリコンロッドの製造方法と製造装置
JP2016016999A (ja) * 2014-07-04 2016-02-01 信越化学工業株式会社 多結晶シリコン棒製造用のシリコン芯線および多結晶シリコン棒の製造装置
JP2016041636A (ja) * 2014-08-18 2016-03-31 信越化学工業株式会社 多結晶シリコン棒の製造方法および多結晶シリコン棒
JP6181620B2 (ja) 2014-09-04 2017-08-16 信越化学工業株式会社 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊
JP6345108B2 (ja) 2014-12-25 2018-06-20 信越化学工業株式会社 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、ｆｚ単結晶シリコンの製造方法
JP6370232B2 (ja) * 2015-01-28 2018-08-08 株式会社トクヤマ 多結晶シリコンロッドの製造方法
JP6314097B2 (ja) * 2015-02-19 2018-04-18 信越化学工業株式会社 多結晶シリコン棒
JP6343592B2 (ja) * 2015-07-28 2018-06-13 信越化学工業株式会社 多結晶シリコン製造用反応炉及び多結晶シリコンの製造方法
JP6378147B2 (ja) * 2015-09-04 2018-08-22 信越化学工業株式会社 多結晶シリコン棒の製造方法およびｃｚ単結晶シリコンの製造方法
JP6440601B2 (ja) * 2015-09-04 2018-12-19 信越化学工業株式会社 多結晶シリコン棒の製造方法およびｆｚ単結晶シリコンの製造方法
CN106206266B (zh) * 2016-07-22 2020-02-04 上海芯导电子科技有限公司 一种推阱工艺
TWI791486B (zh) * 2017-02-20 2023-02-11 日商德山股份有限公司 多晶矽的製造方法
CN106865551B (zh) * 2017-03-24 2017-12-19 亚洲硅业（青海）有限公司 用于48对棒多晶硅还原炉的喷嘴
CN109399641B (zh) * 2018-12-25 2021-01-01 亚洲硅业(青海)股份有限公司 一种进料流速可变的还原炉底盘装置
JP7239432B2 (ja) * 2019-09-27 2023-03-14 東海カーボン株式会社 多結晶ＳｉＣ成形体の製造方法
US20240010502A1 (en) * 2020-11-27 2024-01-11 Tokuyama Corporation Polycrystal silicon rod, polycrystal silicon rod production method, and polycrystal silicon thermal processing method
CN112624121B (zh) * 2020-12-21 2021-09-28 亚洲硅业(青海)股份有限公司 多晶硅生产控制系统及控制方法
CN120247033A (zh) * 2025-04-02 2025-07-04 句容市星辰新型材料有限公司 一种多晶硅还原方法及设备
CN120383316B (zh) * 2025-06-30 2025-09-02 江苏鑫华半导体科技股份有限公司 基于硅芯棒生长特征的多晶硅沉积进气装置及控制方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010098319A1 (ja) * 2009-02-27 2010-09-02 株式会社トクヤマ 多結晶シリコンロッド及びその製造装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2727305A1 (de) 1977-06-16 1979-01-04 Siemens Ag Verfahren zum abscheiden von feinkristallinem silicium aus der gasphase an der oberflaeche eines erhitzten traegerkoerpers
DE2831816A1 (de) 1978-07-19 1980-01-31 Siemens Ag Verfahren zum abscheiden von silicium in feinkristalliner form
JP3343508B2 (ja) * 1997-05-26 2002-11-11 株式会社トクヤマ 表面状態の改善された多結晶シリコンロッド
JP3660617B2 (ja) * 2001-10-23 2005-06-15 住友チタニウム株式会社 半導体級多結晶シリコンの製造方法
AU2003211024A1 (en) * 2002-02-14 2003-09-04 Advanced Silicon Materials Llc Energy efficient method for growing polycrystalline silicon
DE102007047210A1 (de) * 2007-10-02 2009-04-09 Wacker Chemie Ag Polykristallines Silicium und Verfahren zu seiner Herstellung
JP5339945B2 (ja) * 2009-02-04 2013-11-13 株式会社トクヤマ 多結晶シリコンの製法
US8507051B2 (en) * 2009-07-15 2013-08-13 Mitsubishi Materials Corporation Polycrystalline silicon producing method
JP5655429B2 (ja) 2009-08-28 2015-01-21 三菱マテリアル株式会社 多結晶シリコンの製造方法、製造装置及び多結晶シリコン
JP5560018B2 (ja) 2009-10-14 2014-07-23 信越化学工業株式会社 多結晶シリコン製造用芯線ホルダおよび多結晶シリコンの製造方法
RU106893U1 (ru) * 2011-02-28 2011-07-27 Открытое акционерное общество "Красноярский машиностроительный завод" (ОАО "Красмаш") Реактор для выращивания стержней поликристаллического кремния

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010098319A1 (ja) * 2009-02-27 2010-09-02 株式会社トクヤマ 多結晶シリコンロッド及びその製造装置

Also Published As

Publication number Publication date
JP2013112566A (ja) 2013-06-10
KR20140103127A (ko) 2014-08-25
CN103958406B (zh) 2016-05-25
US9394606B2 (en) 2016-07-19
MY171148A (en) 2019-09-27
US20140302239A1 (en) 2014-10-09
EP2786963A4 (en) 2015-09-02
RU2581090C2 (ru) 2016-04-10
EP2786963A1 (en) 2014-10-08
JP5719282B2 (ja) 2015-05-13
EP2786963B1 (en) 2020-02-12
WO2013080556A1 (ja) 2013-06-06
RU2014126432A (ru) 2016-01-27
CN103958406A (zh) 2014-07-30

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