MY171148A - Production method for polycrystalline silicon, and reactor for polycrystalline silicon production - Google Patents

Production method for polycrystalline silicon, and reactor for polycrystalline silicon production

Info

Publication number
MY171148A
MY171148A MYPI2014701175A MYPI2014701175A MY171148A MY 171148 A MY171148 A MY 171148A MY PI2014701175 A MYPI2014701175 A MY PI2014701175A MY PI2014701175 A MYPI2014701175 A MY PI2014701175A MY 171148 A MY171148 A MY 171148A
Authority
MY
Malaysia
Prior art keywords
polycrystalline silicon
reactor
source gas
production
popcorn
Prior art date
Application number
MYPI2014701175A
Other languages
English (en)
Inventor
Yasushi Kurosawa
Shigeyoshi Netsu
Naruhiro Hoshino
Tetsuro Okada
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of MY171148A publication Critical patent/MY171148A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H01L21/2053—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
MYPI2014701175A 2011-11-29 2012-11-29 Production method for polycrystalline silicon, and reactor for polycrystalline silicon production MY171148A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011259971A JP5719282B2 (ja) 2011-11-29 2011-11-29 多結晶シリコンの製造方法

Publications (1)

Publication Number Publication Date
MY171148A true MY171148A (en) 2019-09-27

Family

ID=48535045

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2014701175A MY171148A (en) 2011-11-29 2012-11-29 Production method for polycrystalline silicon, and reactor for polycrystalline silicon production

Country Status (8)

Country Link
US (1) US9394606B2 (enExample)
EP (1) EP2786963B1 (enExample)
JP (1) JP5719282B2 (enExample)
KR (1) KR101821851B1 (enExample)
CN (1) CN103958406B (enExample)
MY (1) MY171148A (enExample)
RU (1) RU2581090C2 (enExample)
WO (1) WO2013080556A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6038625B2 (ja) * 2012-12-10 2016-12-07 株式会社トクヤマ 多結晶シリコンロッドの製造方法と製造装置
JP2016016999A (ja) * 2014-07-04 2016-02-01 信越化学工業株式会社 多結晶シリコン棒製造用のシリコン芯線および多結晶シリコン棒の製造装置
JP2016041636A (ja) * 2014-08-18 2016-03-31 信越化学工業株式会社 多結晶シリコン棒の製造方法および多結晶シリコン棒
JP6181620B2 (ja) * 2014-09-04 2017-08-16 信越化学工業株式会社 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊
JP6345108B2 (ja) * 2014-12-25 2018-06-20 信越化学工業株式会社 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、ｆｚ単結晶シリコンの製造方法
JP6370232B2 (ja) * 2015-01-28 2018-08-08 株式会社トクヤマ 多結晶シリコンロッドの製造方法
JP6314097B2 (ja) * 2015-02-19 2018-04-18 信越化学工業株式会社 多結晶シリコン棒
JP6343592B2 (ja) * 2015-07-28 2018-06-13 信越化学工業株式会社 多結晶シリコン製造用反応炉及び多結晶シリコンの製造方法
JP6440601B2 (ja) * 2015-09-04 2018-12-19 信越化学工業株式会社 多結晶シリコン棒の製造方法およびｆｚ単結晶シリコンの製造方法
JP6378147B2 (ja) * 2015-09-04 2018-08-22 信越化学工業株式会社 多結晶シリコン棒の製造方法およびｃｚ単結晶シリコンの製造方法
CN106206266B (zh) * 2016-07-22 2020-02-04 上海芯导电子科技有限公司 一种推阱工艺
TWI791486B (zh) * 2017-02-20 2023-02-11 日商德山股份有限公司 多晶矽的製造方法
CN106865551B (zh) * 2017-03-24 2017-12-19 亚洲硅业（青海）有限公司 用于48对棒多晶硅还原炉的喷嘴
CN109399641B (zh) * 2018-12-25 2021-01-01 亚洲硅业(青海)股份有限公司 一种进料流速可变的还原炉底盘装置
JP7239432B2 (ja) * 2019-09-27 2023-03-14 東海カーボン株式会社 多結晶ＳｉＣ成形体の製造方法
US20240010502A1 (en) * 2020-11-27 2024-01-11 Tokuyama Corporation Polycrystal silicon rod, polycrystal silicon rod production method, and polycrystal silicon thermal processing method
CN112624121B (zh) * 2020-12-21 2021-09-28 亚洲硅业(青海)股份有限公司 多晶硅生产控制系统及控制方法
CN120247033A (zh) * 2025-04-02 2025-07-04 句容市星辰新型材料有限公司 一种多晶硅还原方法及设备
CN120383316B (zh) * 2025-06-30 2025-09-02 江苏鑫华半导体科技股份有限公司 基于硅芯棒生长特征的多晶硅沉积进气装置及控制方法

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Publication number Priority date Publication date Assignee Title
DE2727305A1 (de) 1977-06-16 1979-01-04 Siemens Ag Verfahren zum abscheiden von feinkristallinem silicium aus der gasphase an der oberflaeche eines erhitzten traegerkoerpers
DE2831816A1 (de) 1978-07-19 1980-01-31 Siemens Ag Verfahren zum abscheiden von silicium in feinkristalliner form
JP3343508B2 (ja) * 1997-05-26 2002-11-11 株式会社トクヤマ 表面状態の改善された多結晶シリコンロッド
JP3660617B2 (ja) * 2001-10-23 2005-06-15 住友チタニウム株式会社 半導体級多結晶シリコンの製造方法
JP4813021B2 (ja) * 2002-02-14 2011-11-09 レック シリコン インコーポレイテッド ポリシリコンの製造方法
DE102007047210A1 (de) * 2007-10-02 2009-04-09 Wacker Chemie Ag Polykristallines Silicium und Verfahren zu seiner Herstellung
JP5339945B2 (ja) * 2009-02-04 2013-11-13 株式会社トクヤマ 多結晶シリコンの製法
CN102300808B (zh) * 2009-02-27 2013-08-21 株式会社德山 多晶硅棒及其制造装置
US8507051B2 (en) * 2009-07-15 2013-08-13 Mitsubishi Materials Corporation Polycrystalline silicon producing method
JP5655429B2 (ja) * 2009-08-28 2015-01-21 三菱マテリアル株式会社 多結晶シリコンの製造方法、製造装置及び多結晶シリコン
JP5560018B2 (ja) 2009-10-14 2014-07-23 信越化学工業株式会社 多結晶シリコン製造用芯線ホルダおよび多結晶シリコンの製造方法
RU106893U1 (ru) * 2011-02-28 2011-07-27 Открытое акционерное общество "Красноярский машиностроительный завод" (ОАО "Красмаш") Реактор для выращивания стержней поликристаллического кремния

Also Published As

Publication number Publication date
EP2786963A1 (en) 2014-10-08
EP2786963B1 (en) 2020-02-12
WO2013080556A1 (ja) 2013-06-06
EP2786963A4 (en) 2015-09-02
JP5719282B2 (ja) 2015-05-13
RU2581090C2 (ru) 2016-04-10
CN103958406A (zh) 2014-07-30
CN103958406B (zh) 2016-05-25
KR101821851B1 (ko) 2018-01-24
JP2013112566A (ja) 2013-06-10
RU2014126432A (ru) 2016-01-27
KR20140103127A (ko) 2014-08-25
US9394606B2 (en) 2016-07-19
US20140302239A1 (en) 2014-10-09

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