KR101620113B1 - 광전 소자 및 광전 소자 제조 방법 - Google Patents

광전 소자 및 광전 소자 제조 방법 Download PDF

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KR101620113B1
KR101620113B1 KR1020107019998A KR20107019998A KR101620113B1 KR 101620113 B1 KR101620113 B1 KR 101620113B1 KR 1020107019998 A KR1020107019998 A KR 1020107019998A KR 20107019998 A KR20107019998 A KR 20107019998A KR 101620113 B1 KR101620113 B1 KR 101620113B1
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carrier
carrier strip
electrically insulating
insulating material
strip
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KR20100136971A (ko
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하랄드 제이거
마이클 지트즐스퍼거
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오스람 옵토 세미컨덕터스 게엠베하
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/479Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
KR1020107019998A 2008-04-17 2009-03-31 광전 소자 및 광전 소자 제조 방법 Active KR101620113B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008019269.4 2008-04-17
DE102008019269 2008-04-17
DE102008024704.9 2008-05-21
DE102008024704A DE102008024704A1 (de) 2008-04-17 2008-05-21 Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils

Publications (2)

Publication Number Publication Date
KR20100136971A KR20100136971A (ko) 2010-12-29
KR101620113B1 true KR101620113B1 (ko) 2016-05-12

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KR1020107019998A Active KR101620113B1 (ko) 2008-04-17 2009-03-31 광전 소자 및 광전 소자 제조 방법

Country Status (7)

Country Link
US (1) US9698282B2 (https=)
EP (1) EP2266139B1 (https=)
JP (1) JP5490096B2 (https=)
KR (1) KR101620113B1 (https=)
CN (1) CN101971353B (https=)
DE (1) DE102008024704A1 (https=)
WO (1) WO2009143789A1 (https=)

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JP4747265B2 (ja) * 2009-11-12 2011-08-17 電気化学工業株式会社 発光素子搭載用基板およびその製造方法
US8319247B2 (en) * 2010-03-25 2012-11-27 Koninklijke Philips Electronics N.V. Carrier for a light emitting device
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements
JP2012028744A (ja) * 2010-06-22 2012-02-09 Panasonic Corp 半導体装置用パッケージおよびその製造方法ならびに半導体装置
JPWO2012036281A1 (ja) * 2010-09-17 2014-02-03 ローム株式会社 半導体発光装置、その製造方法、および表示装置
KR101825473B1 (ko) * 2011-02-16 2018-02-05 삼성전자 주식회사 발광소자 패키지 및 그 제조방법
JP5766976B2 (ja) * 2011-02-28 2015-08-19 日亜化学工業株式会社 発光装置の製造方法
TWI552374B (zh) 2011-02-28 2016-10-01 日亞化學工業股份有限公司 發光裝置
CN102299247A (zh) * 2011-05-20 2011-12-28 浙江英特来光电科技有限公司 一种全户外led模组
JP5795251B2 (ja) * 2011-12-14 2015-10-14 信越化学工業株式会社 光学半導体装置用基台及びその製造方法、並びに光学半導体装置
DE102012101889A1 (de) 2012-03-06 2013-09-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
TW201344971A (zh) * 2012-04-18 2013-11-01 隆達電子股份有限公司 發光元件之封裝結構
JP5998716B2 (ja) * 2012-07-31 2016-09-28 日亜化学工業株式会社 発光装置
DE102012109905B4 (de) * 2012-10-17 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen
US9726357B2 (en) 2013-02-06 2017-08-08 Sharp Kabushiki Kaisha Light-emitting device
DE102014102810A1 (de) * 2014-03-04 2015-09-10 Osram Opto Semiconductors Gmbh Herstellung optoelektronischer Bauelemente
DE102014114520B4 (de) * 2014-10-07 2020-03-05 Infineon Technologies Austria Ag Ein elektronisches Modul mit mehreren Einkapselungsschichten und ein Verfahren zu dessen Herstellung
DE102014116370A1 (de) 2014-11-10 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Trägers und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI570856B (zh) * 2014-11-10 2017-02-11 恆勁科技股份有限公司 封裝結構及其製法
JP5900586B2 (ja) * 2014-12-08 2016-04-06 日亜化学工業株式会社 発光装置
DE102015105509A1 (de) 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015107515A1 (de) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen
DE102015107742A1 (de) * 2015-05-18 2016-11-24 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil
DE102015109953A1 (de) * 2015-06-22 2016-12-22 Osram Opto Semiconductors Gmbh Herstellung elektronischer Bauelemente
DE102015114292A1 (de) * 2015-08-27 2017-03-02 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung
DE102015114579B4 (de) * 2015-09-01 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
DE102016114478A1 (de) * 2016-08-04 2018-02-08 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines trägers für ein optoelektronisches bauelement
JP2016225655A (ja) * 2016-09-21 2016-12-28 大日本印刷株式会社 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、リードフレームの多面付け体、樹脂付きリードフレームの多面付け体、光半導体装置、光半導体装置の多面付け体
JP2017076809A (ja) * 2016-12-05 2017-04-20 大日本印刷株式会社 樹脂付リードフレーム、半導体装置、照明装置
JP7043225B2 (ja) 2017-11-08 2022-03-29 株式会社東芝 半導体装置
JP7116303B2 (ja) 2018-06-25 2022-08-10 日亜化学工業株式会社 パッケージ及び発光装置
WO2020038179A1 (zh) 2018-08-24 2020-02-27 宁波舜宇光电信息有限公司 电路板组件及其半成品、泛光灯、摄像模组及其应用
JP7227474B2 (ja) * 2019-02-26 2023-02-22 日亜化学工業株式会社 樹脂パッケージ及び発光装置
DE102019121449A1 (de) * 2019-08-08 2021-02-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur vereinzelung von bauteilen aus einem bauteilverbund sowie bauteil
CN111834329B (zh) * 2020-06-30 2021-12-24 江苏长电科技股份有限公司 一种半导体封装结构及其制造方法

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US20070029570A1 (en) * 2005-08-04 2007-02-08 Samsung Electronics Co., Ltd. LED package and method for fabricating the same

Also Published As

Publication number Publication date
US20110074000A1 (en) 2011-03-31
JP5490096B2 (ja) 2014-05-14
EP2266139B1 (de) 2017-08-23
CN101971353A (zh) 2011-02-09
EP2266139A1 (de) 2010-12-29
JP2011517125A (ja) 2011-05-26
KR20100136971A (ko) 2010-12-29
CN101971353B (zh) 2012-07-18
WO2009143789A1 (de) 2009-12-03
DE102008024704A1 (de) 2009-10-29
US9698282B2 (en) 2017-07-04

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