JP5490096B2 - オプトエレクトロニクス部品およびオプトエレクトロニクス部品の製造方法 - Google Patents

オプトエレクトロニクス部品およびオプトエレクトロニクス部品の製造方法 Download PDF

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Publication number
JP5490096B2
JP5490096B2 JP2011504309A JP2011504309A JP5490096B2 JP 5490096 B2 JP5490096 B2 JP 5490096B2 JP 2011504309 A JP2011504309 A JP 2011504309A JP 2011504309 A JP2011504309 A JP 2011504309A JP 5490096 B2 JP5490096 B2 JP 5490096B2
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carrier
insulating material
electrically insulating
optoelectronic component
optoelectronic
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Japanese (ja)
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JP2011517125A5 (https=
JP2011517125A (ja
Inventor
ハラルト イェーガー
ミヒャエル ツィッツルスペルガー
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/479—Leadframes on or in insulating or insulated package substrates, interposers, or redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
JP2011504309A 2008-04-17 2009-03-31 オプトエレクトロニクス部品およびオプトエレクトロニクス部品の製造方法 Active JP5490096B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008019269.4 2008-04-17
DE102008019269 2008-04-17
DE102008024704.9 2008-05-21
DE102008024704A DE102008024704A1 (de) 2008-04-17 2008-05-21 Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
PCT/DE2009/000438 WO2009143789A1 (de) 2008-04-17 2009-03-31 Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils

Publications (3)

Publication Number Publication Date
JP2011517125A JP2011517125A (ja) 2011-05-26
JP2011517125A5 JP2011517125A5 (https=) 2012-05-17
JP5490096B2 true JP5490096B2 (ja) 2014-05-14

Family

ID=41111908

Family Applications (1)

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JP2011504309A Active JP5490096B2 (ja) 2008-04-17 2009-03-31 オプトエレクトロニクス部品およびオプトエレクトロニクス部品の製造方法

Country Status (7)

Country Link
US (1) US9698282B2 (https=)
EP (1) EP2266139B1 (https=)
JP (1) JP5490096B2 (https=)
KR (1) KR101620113B1 (https=)
CN (1) CN101971353B (https=)
DE (1) DE102008024704A1 (https=)
WO (1) WO2009143789A1 (https=)

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JP5766976B2 (ja) * 2011-02-28 2015-08-19 日亜化学工業株式会社 発光装置の製造方法
TWI552374B (zh) 2011-02-28 2016-10-01 日亞化學工業股份有限公司 發光裝置
CN102299247A (zh) * 2011-05-20 2011-12-28 浙江英特来光电科技有限公司 一种全户外led模组
JP5795251B2 (ja) * 2011-12-14 2015-10-14 信越化学工業株式会社 光学半導体装置用基台及びその製造方法、並びに光学半導体装置
DE102012101889A1 (de) 2012-03-06 2013-09-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
TW201344971A (zh) * 2012-04-18 2013-11-01 隆達電子股份有限公司 發光元件之封裝結構
JP5998716B2 (ja) * 2012-07-31 2016-09-28 日亜化学工業株式会社 発光装置
DE102012109905B4 (de) * 2012-10-17 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen
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DE102014114520B4 (de) * 2014-10-07 2020-03-05 Infineon Technologies Austria Ag Ein elektronisches Modul mit mehreren Einkapselungsschichten und ein Verfahren zu dessen Herstellung
DE102014116370A1 (de) 2014-11-10 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Trägers und Verfahren zum Herstellen eines optoelektronischen Bauelements
TWI570856B (zh) * 2014-11-10 2017-02-11 恆勁科技股份有限公司 封裝結構及其製法
JP5900586B2 (ja) * 2014-12-08 2016-04-06 日亜化学工業株式会社 発光装置
DE102015105509A1 (de) 2015-04-10 2016-10-13 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102015107515A1 (de) 2015-05-13 2016-11-17 Osram Opto Semiconductors Gmbh Verfahren zum Bearbeiten eines Leiterrahmens und Leiterrahmen
DE102015107742A1 (de) * 2015-05-18 2016-11-24 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil
DE102015109953A1 (de) * 2015-06-22 2016-12-22 Osram Opto Semiconductors Gmbh Herstellung elektronischer Bauelemente
DE102015114292A1 (de) * 2015-08-27 2017-03-02 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung
DE102015114579B4 (de) * 2015-09-01 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
DE102016114478A1 (de) * 2016-08-04 2018-02-08 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines trägers für ein optoelektronisches bauelement
JP2016225655A (ja) * 2016-09-21 2016-12-28 大日本印刷株式会社 光半導体装置用リードフレーム、樹脂付き光半導体装置用リードフレーム、リードフレームの多面付け体、樹脂付きリードフレームの多面付け体、光半導体装置、光半導体装置の多面付け体
JP2017076809A (ja) * 2016-12-05 2017-04-20 大日本印刷株式会社 樹脂付リードフレーム、半導体装置、照明装置
JP7043225B2 (ja) 2017-11-08 2022-03-29 株式会社東芝 半導体装置
JP7116303B2 (ja) 2018-06-25 2022-08-10 日亜化学工業株式会社 パッケージ及び発光装置
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Also Published As

Publication number Publication date
US20110074000A1 (en) 2011-03-31
EP2266139B1 (de) 2017-08-23
CN101971353A (zh) 2011-02-09
EP2266139A1 (de) 2010-12-29
JP2011517125A (ja) 2011-05-26
KR101620113B1 (ko) 2016-05-12
KR20100136971A (ko) 2010-12-29
CN101971353B (zh) 2012-07-18
WO2009143789A1 (de) 2009-12-03
DE102008024704A1 (de) 2009-10-29
US9698282B2 (en) 2017-07-04

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